概述
数据手册0906-2 概述
N-Channel Enhancement-Mode Lateral MOSFETs N沟道增强模式横向的MOSFET
0906-2 数据手册
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PDF下载Document Number: MRF5S4125N
Rev. 0, 1/2007
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S4125NR1
MRF5S4125NBR1
Designed for broadband commercial and industrial applications with
frequencies up to 500 MHz. The high gain and broadband performance of
these devices make them ideal for large-signal, common-source amplifier
applications in 28 volt base station equipment.
• Typical Single-Carrier N-CDMA Performance @ 465 MHz: VDD = 28 Volts,
450-480 MHz, 25 W AVG., 28 V
SINGLE N-CDMA
I
DQ = 1100 mA, Pout = 25 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 23 dB
Drain Efficiency — 30.2%
ACPR @ 750 kHz Offset — -47.6 dBc in 30 kHz Bandwidth
LATERAL N-CHANNEL
RF POWER MOSFETs
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 465 MHz, 125 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
CASE 1486-03, STYLE 1
TO-270 WB-4
MRF5S4125NR1
• 200°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
CASE 1484-04, STYLE 1
TO-272 WB-4
MRF5S4125NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
-0.5, +65
-0.5, +15
- 65 to +150
200
Unit
Vdc
Vdc
°C
Drain-Source Voltage
Gate-Source Voltage
Storage Temperature Range
V
DSS
V
GS
T
stg
(1,2)
Operating Junction Temperature
T
°C
J
Table 2. Thermal Characteristics
Characteristic
(2,3)
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Case Temperature 90°C, 125 W CW
Case Temperature 90°C, 25 W CW
R
θ
JC
°C/W
0.33
0.43
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
1B (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°C
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
I
—
—
—
—
—
—
10
1
μAdc
μAdc
μAdc
DSS
DSS
GSS
(V = 65 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate-Source Leakage Current
10
(V = 5 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 400 μAdc)
V
V
2
3
4
5
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 1100 mAdc, Measured in Functional Test)
3.5
4.25
0.175
DS
D
Drain-Source On-Voltage
(V = 10 Vdc, I = 1.5 Adc)
V
0.05
0.3
GS
D
(1)
Dynamic Characteristics
Reverse Transfer Capacitance
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
2.41
—
—
pF
pF
rss
GS
Output Capacitance
C
oss
74.61
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
GS
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 1100 mA, P = 25 W Avg. N-CDMA, f = 465 MHz,
DD
DQ
out
Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ 750 kHz Offset.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
G
22
28
—
—
23
25
—
dB
%
ps
Drain Efficiency
η
30.2
-47.6
-15
D
Adjacent Channel Power Ratio
Input Return Loss
ACPR
IRL
-45
-9
dBc
dB
1. Part internally input matched.
MRF5S4125NR1 MRF5S4125NBR1
RF Device Data
Freescale Semiconductor
2
B1
R1
V
V
BIAS
SUPPLY
+
C14 C15 C16
R2
C5
C6
C13
B2
Z19
L3
Z10
R3
Z9
Z11 Z12
Z13
Z18
RF
INPUT
Z20
Z21
L1
L2
Z1
Z2
Z3
Z6
Z7
Z8
RF
OUTPUT
Z14
C8
C11
Z22
C7
C1
DUT
C9
C2
Z5
C12
C3
C4
C10
Z17
Z15
Z16
Z4
Z1
Z2
Z3
Z4
Z5
Z6, Z7
Z8
0.186″ x 0.084″ Microstrip
0.206″ x 0.084″ Microstrip
1.171″ x 0.084″ Microstrip
0.275″ x 0.084″ Microstrip
0.985″ x 0.084″ Microstrip
0.130″ x 0.084″ Microstrip
0.131″ x 0.084″ Microstrip
0.675″ x 0.504″ Microstrip
0.397″ x 0.656″ Microstrip
0.071″ x 0.084″ Microstrip
0.008″ x 0.084″ Microstrip
Z13
0.063″ x 0.084″ Microstrip
0.315″ x 0.084″ Microstrip
0.473″ x 0.084″ Microstrip
0.522″ x 0.084″ Microstrip
0.448″ x 0.084″ Microstrip
0.628″ x 0.084″ Microstrip
0.291″ x 0.084″ Microstrip
0.318″ x 0.084″ Microstrip
0.202″ x 0.084″ Microstrip
0.190″ x 0.084″ Microstrip
Z14
Z15
Z16
Z17
Z18
Z19
Z20
Z21
Z22
Z9
Z10
Z11
Z12
PCB
Arlon AD250, 0.030″, ε = 2.5
r
Figure 1. MRF5S4125NR1(NBR1) Test Circuit Schematic
Table 6. MRF5S4125NR1(NBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
Fair-Rite
B1, B2
Ferrite Beads, Short
2743019447
C1, C6, C12, C13
120 pF Chip Capacitors
0.8-8.0 pF, Variable Capacitors, Gigatrim
20 pF Chip Capacitors
ATC600B121BT250XT
27291SL
ATC
C2, C10
C3, C9
C4
Johanson
ATC
ATC600B200BT250XT
ATC600B8R2BT250XT
GRM55DR61H106KA88L
ATC600B270BT250XT
ATC600B470BT250XT
ATC600B3R3BT250XT
T491X226K035A5
8.2 pF Chip Capacitor
ATC
C5, C14, C15
C7
10 μF, 50 V Chip Capacitors
27 pF Chip Capacitor
Murata
ATC
C8
47 pF Chip Capacitor
ATC
C11
3.3 pF Chip Capacitor
ATC
C16
22 μF, 35 V Tantalum Capacitor
1.6 nH Inductors
Kemet
Coilcraft
Coilcraft
Vishay
Vishay
Vishay
L1, L2
L3
0906-2
27 nH Inductor
1812SMS-27N_L
R1
1000 Ω, 1/4 W Chip Resistor
10 kΩ, 1/4 W Chip Resistor
100 Ω, 1/4 W Chip Resistor
CRCW12061001FKTA
CRCW12061002FKTA
CRCW1206100RFKTA
R2
R3
MRF5S4125NR1 MRF5S4125NBR1
RF Device Data
Freescale Semiconductor
3
C14
C6
B1
R1
C5
C15
C16
B2
R2
L1
C13
L3
R3
C1
L2
C8
C7
C12
C4
C2
C3
C9
C11
C10
MRF5S4125N
Rev. 1
Figure 2. MRF5S4125NR1(NBR1) Test Circuit Component Layout
MRF5S4125NR1 MRF5S4125NBR1
RF Device Data
Freescale Semiconductor
4
TYPICAL CHARACTERISTICS
25
24
23
22
21
36
32
28
η
D
24
G
V
I
= 28 Vdc, P = 25 W (Avg.)
DD out
= 1100 mA, Single−Carrier N−CDMA
ps
DQ
−45
−50
−55
−60
−65
0
ACPR
−5
20
19
1.2288 MHz Channel Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
−10
−15
−20
IRL
18
17
ALT1
420
430
440
450
460
470
480
490
500
f, FREQUENCY (MHz)
Figure 3. Single-Carrier N-CDMA Broadband Performance @ Pout = 25 Watts Avg.
25
24
52
48
44
40
23
22
21
20
19
18
17
η
D
V
I
= 28 Vdc, P = 58 W (Avg.)
out
= 1100 mA, Single−Carrier N−CDMA
DD
−20
−30
−40
−50
−60
0
G
DQ
ps
1.2288 MHz, Channel Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
−5
ACPR
IRL
−10
−15
−20
ALT1
420
430
440
450
460
470
480
490
500
f, FREQUENCY (MHz)
Figure 4. Single-Carrier N-CDMA Broadband Performance @ Pout = 58 Watts Avg.
25
−10
I
= 1650 mA
V
= 28 Vdc
f1 = 465 MHz, f2 = 467.5 MHz
DQ
DD
24
23
22
21
20
19
18
1375 mA
1100 mA
Two−Tone Measurements, 2.5 MHz Tone Spacing
−20
−30
825 mA
I
= 550 mA
DQ
562.5 mA
550 mA
825 mA
−40
−50
V
= 28 Vdc
f1 = 465 MHz, f2 = 467.5 MHz
DD
1375 mA
10
1100 mA
Two−Tone Measurements, 2.5 MHz Tone Spacing
1
10
100
200 300
1
100
200 300
P
, OUTPUT POWER (WATTS) PEP
out
P , OUTPUT POWER (WATTS) PEP
out
Figure 5. Two-Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF5S4125NR1 MRF5S4125NBR1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
−10
−10
V
I
= 28 Vdc, P = 120 W (PEP)
out
= 1100 mA, Two−Tone Measurements
V
= 28 Vdc
f1 = 465 MHz, f2 = 467.5 MHz
DD
DD
DQ
−20
−30
−40
−50
−60
−70
(f1 + f2)/2 = Center Frequency of 465 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
−20
−30
−40
−50
IM3−U
IM3−L
3rd Order
IM5−L
IM5−U
5th Order
IM7−U
7th Order
IM7−L
−60
1
10
100
200 300
1
10
100
TWO−TONE SPACING (MHz)
P
, OUTPUT POWER (WATTS) PEP
out
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
59
58
Ideal
P6dB = 52.98 dBm (198.6 W)
57
56
P3dB = 52.26 dBm (168.27 W)
55
54
P1dB = 51.16 dBm (130.62 W)
53
52
51
50
49
Actual
= 28 Vdc, I = 1100 mA
V
DD
DQ
CW
f = 465 MHz
24 25 26 27 28 29 30 31 32 33 34 35 36
P , INPUT POWER (dBm)
in
Figure 9. Pulsed CW Output Power versus
Input Power
50
45
40
35
30
25
20
15
10
5
−25
−30
−35
−40
−45
−50
−55
−60
−65
−70
−75
V
= 28 Vdc, I = 1100 mA, f = 465 MHz
DQ
Single−Carrier N−CDMA
DD
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
ACPR
G
25_C
ps
85_C
T = −30_C
C
η
D
85_C
−30_C
25_C
ALT1
−30_C
25_C
85_C
0
1
10
60
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 10. Single-Carrier N-CDMA ACPR, ALT1, Power
Gain and Drain Efficiency versus Output Power
MRF5S4125NR1 MRF5S4125NBR1
RF Device Data
Freescale Semiconductor
6
TYPICAL CHARACTERISTICS
24
90
80
70
26
25
−30_C
I = 1100 mA
DQ
f = 465 MHz
G
ps
25_C
T = −30_C
C
24
23
22
21
23
22
21
20
25_C
85_C
85_C 60
50
40
20
19
30
20
V
I
= 28 Vdc
= 1100 mA
DD
η
D
DQ
18
17
10
f = 465 MHz
V
= 24 V
32 V
200
28 V
DD
0
0
50
100
150
250
1
10
100
300
P
, OUTPUT POWER (WATTS) CW
out
P , OUTPUT POWER (WATTS) CW
out
Figure 12. Power Gain versus Output Power
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
9
10
8
10
7
10
6
10
5
10
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (°C)
J
This above graph displays calculated MTTF in hours when the device
is operated at V = 28 Vdc, P = 25 W Avg., and η = 30.2%.
DD
out
D
MTTF calculator available at http:/www.freescale.com/rf. Select
Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
Figure 13. MTTF versus Junction Temperature
MRF5S4125NR1 MRF5S4125NBR1
RF Device Data
Freescale Semiconductor
7
N-CDMA TEST SIGNAL
100
10
−10
−20
−30
1.2288 MHz
Channel BW
1
−40
−50
−60
−70
−80
−90
0.1
0.01
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carrier. ACPR Measured in 30 kHz Bandwidth @
750 kHz Offset. PAR = 9.8 dB @ 0.01%
Probability on CCDF.
0.001
−ACPR in 30 kHz −ACPR in 30 kHz
Integrated BW
Integrated BW
0.0001
0
2
4
6
8
10
−100
−110
PEAK−TO−AVERAGE (dB)
Figure 14. Single-Carrier CCDF N-CDMA
−3.6 −2.9 −2.2 −1.5 −0.7
0
0.7 1.5
2.2 2.9 3.6
f, FREQUENCY (MHz)
Figure 15. Single-Carrier N-CDMA Spectrum
MRF5S4125NR1 MRF5S4125NBR1
RF Device Data
Freescale Semiconductor
8
f = 545 MHz
Z
f = 545 MHz
load
Z
source
f = 385 MHz
Z = 25 Ω
o
f = 385 MHz
V
= 28 Vdc, I = 1100 mA, P = 25 W Avg.
DQ out
DD
f
Z
Z
load
W
source
W
MHz
385
405
425
445
465
485
505
525
545
4.735 + j2.917
4.073 + j4.202
3.987 + j5.466
3.909 + j6.743
4.094 + j7.661
4.128 + j9.483
4.446 + j11.620
4.921 + j13.710
5.437 + j15.838
2.229 + j5.627
1.809 + j6.123
1.842 + j6.684
1.767 + j7.187
1.822 + j7.338
1.566 + j8.397
1.525 + j9.787
1.769 + j11.120
2.023 + j12.467
Z
Z
=
=
Test circuit impedance as measured from
gate to ground.
source
Test circuit impedance as measured
from drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 16. Series Equivalent Source and Load Impedance
MRF5S4125NR1 MRF5S4125NBR1
RF Device Data
Freescale Semiconductor
9
PACKAGE DIMENSIONS
E1
B
A
2X
E3
GATE LEAD
DRAIN LEAD
D
D1
4X
e
4X
b1
M
aaa
C A
2X
D2
2X
E
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DATUM PLANE −H− IS LOCATED AT THE TOP OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.
4. DIMENSIONS “D" AND “E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS “D" AND “E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −H−.
5. DIMENSION “b1" DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE “b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
F
DATUM
PLANE
ZONE J
H
c1
A
A1
2X
E2
A2
NOTE 7
SEATING
C
PLANE
E5
E4
PIN 5
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY.
8. HATCHING REPRESENTS THE EXPOSED AREA
OF THE HEAT SLUG.
NOTE 8
INCHES
DIM MIN MAX
MILLIMETERS
MIN
2.54
0.99
1.02
18.08
17.48
0.28
15.24
14
8.97
3.35
3.15
6.86
8.79
MAX
2.64
1.09
1.07
18.29
17.58
0.48
− − −
14.2
9.07
3.56
3.35
− − −
A
A1
A2
D
.100
.039
.040
.712
.688
.011
.600
.551
.353
.132
.124
.270
.346
.104
.043
.042
.720
.692
.019
− − −
.559
.357
.140
.132
− − −
4
1
2
D1
D2
D3
E
D3
E1
E2
E3
E4
E5
F
3
.350
8.89
.025 BSC
0.64 BSC
b1
c1
e
.164
.007
.170
.011
4.17
0.18
4.32
0.28
.106 BSC
.004
2.69 BSC
0.10
aaa
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. GATE
5. SOURCE
CASE 1486-03
ISSUE C
E5
BOTTOM VIEW
TO-270 WB-4
PLASTIC
MRF5S4125NR1
MRF5S4125NR1 MRF5S4125NBR1
RF Device Data
Freescale Semiconductor
10
MRF5S4125NR1 MRF5S4125NBR1
RF Device Data
Freescale Semiconductor
11
MRF5S4125NR1 MRF5S4125NBR1
RF Device Data
Freescale Semiconductor
12
MRF5S4125NR1 MRF5S4125NBR1
RF Device Data
Freescale Semiconductor
13
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Jan. 2007
• Initial Release of Data Sheet
MRF5S4125NR1 MRF5S4125NBR1
RF Device Data
Freescale Semiconductor
14
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For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
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Semiconductor was negligent regarding the design or manufacture of the part.
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All other product or service names are the property of their respective owners.
ꢀ Freescale Semiconductor, Inc. 2007. All rights reserved.
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Document Number: MRF5S4125N
Rev. 0,1/2007
0906-2 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 0906-2-10 | COILCRAFT | General Purpose Inductor, 0.0017uH, 10%, 1 Element, Air-Core, SMD | 获取价格 |
|
| 0906-2-15-20-75-14-11-0 | MILL-MAX | SPRING-LOADED CONNECTORS Discrete Spring-Loaded Contacts | 获取价格 |
|
| 0906-2-15-20-7X-14-11-0 | MILL-MAX | PCB Terminal | 获取价格 |
|
| 0906-2-63-20-75-14-11-0 | MILL-MAX | PCB Terminal | 获取价格 |
|
| 0906-2FLB | COILCRAFT | Micro Spring Air Core Inductors | 获取价格 |
|
| 0906-2FLC | COILCRAFT | Micro Spring Air Core Inductors | 获取价格 |
|
| 0906-2FLC_15 | COILCRAFT | Micro Spring⢠Air Core Inductors | 获取价格 |
|
| 0906-2GLB | COILCRAFT | Micro Spring Air Core Inductors | 获取价格 |
|
| 0906-2GLC | COILCRAFT | Micro Spring Air Core Inductors | 获取价格 |
|
| 0906-2JLB | COILCRAFT | Micro Spring Air Core Inductors | 获取价格 |
|
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