概述
数据手册100BGQ030J 概述
SCHOTTKY RECTIFIER 肖特基整流器器
100BGQ030J 数据手册
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PDF下载Bulletin PD-20996 rev. E 12/02
100BGQ030
100BGQ030J
SCHOTTKY RECTIFIER
100 Amp
Description/ Features
Major Ratings and Characteristics
The100BGQ030Schottkyrectifierhasbeenoptimizedforultralow
forward voltage drop specifically for low voltage output in high
currentAC/DCpowersupplies.
Characteristics
100BGQ030 Units
I
Rectangular waveform
100
110
A
°C
A
Theproprietarybarriertechnologyallowsforreliableoperationup
to 150°C junction temperature. Typical applications are in
switchingpowersupplies,converters,reversebatteryprotection,
andredundantpowersubsystems.
F(AV)
@T
C
I
Maximum
141
DC
150°CT operation
J
HighFrequencyOperation
V
I
30
V
RRM
@tp=5µssine
4500
0.48
A
Ultralowforwardvoltagedrop
ContinuousHighCurrentoperation
FSM
V
@100Apk typical
V
F
Guardringforenhancedruggednessandlongterm
reliability
PowIRtabTM package
@T
J
150
°C
°C
T
range
-55 to150
J
Case Styles
100BGQ030
100BGQ030J
www.irf.com
1
100BGQ030, 100BGQ030J
Bulletin PD-20996 rev. E 12/02
Voltage Ratings
Part number
100BGQ030
VR
Max. DC Reverse Voltage (V)
30
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters
100BGQ Units
Conditions
IF(AV) Max.AverageForwardCurrent
100
A
50%dutycycle@TC=110°C,rectangularwaveform
IF(RMS) RMS ForwardCurrent
IFSM Max.PeakOneCycleNon-Repetitive
SurgeCurrent
141
4500
850
A
TC=107°C
Followinganyrated
loadconditionand
withratedVRRMapplied
5µs Sineor3µsRect.pulse
10msSineor6msRect. pulse
A
EAS Non-RepetitiveAvalancheEnergy
36
8
mJ
A
TJ=25°C, IAS=8Amps,L=1.12mH
IAR
RepetitiveAvalancheCurrent
Currentdecayinglinearlytozeroin1µsec
FrequencylimitedbyTJ max.VA =1.5xVR typical
Electrical Specifications
Parameters
100BGQ Units
Conditions
Typ. Max.
VFM Forward Voltage Drop
(1) (2) 0.46 0.48
V
V
V
V
@
@
@
@
50A
TJ = 25 °C
0.55 0.58
0.35 0.37
0.48 0.51
100A
50A
TJ = 150 °C
VR = rated VR
100A
IRM
ReverseLeakageCurrent(1)
0.6 2.4 mA
260 460 mA
80 160 mA
800 1100 mA
TJ = 25 °C
TJ = 125°C
TJ = 125 °C
TJ = 150 °C
TJ = TJ max.
VR = 15V
VR = 30V
VF(TO) ThresholdVoltage
0.252
2.4
V
mΩ
pF
rt
ForwardSlopeResistance
CT
LS
Max. Junction Capacitance
TypicalSeriesInductance
3800
3.5
VR = 5VDC, (test signal range 100Khz to 1Mhz) 25 °C
Measured from tab to mounting plane
nH
dv/dt Max. Voltage Rate of Change
(RatedVR)
10000
V/ µs
(1) Pulse Width < 300µs, Duty Cycle < 2%
(2) VFM = VF(TO) + r x IF
t
Thermal-Mechanical Specifications
Parameters
100BGQ Units
Conditions
TJ
Max.JunctionTemperatureRange
-55to150
-55to150
0.50
°C
°C
Tstg Max.StorageTemperatureRange
RthJC Max.ThermalResistanceJunction
toCase
°C/W DCoperation
RthCS TypicalThermalResistance,Caseto
Heatsink
0.20
°C/W Mountingsurface,smoothandgreased
wt
T
ApproximateWeight
MountingTorque
5(0.18) g(oz.)
Min.
1.2(10)
2.4(20)
N*m
(Ibf-in)
Max.
CaseStyle
PowIRtabTM
www.irf.com
2
100BGQ030, 100BGQ030J
Bulletin PD-20996 rev. E 12/02
1000
100
10
1000
100
10
T
= 150°C
125°C
J
100°C
75°C
1
50°C
25°C
0.1
0.01
0
5
10
15
20
25
30
Re ve rse Volta g e - V (V)
R
T
= 150°C
= 125°C
J
Fig.2-Typical Values of Reverse Current
Vs. Reverse Voltage
T
J
10000
T
J
= 25°C
T
= 25°C
J
1
1000
0
0.2
0.4
0.6
0.8
1
1.2
(V)
1.4
1.6
0
5
10
15
20
25
30
35
Forwa rd Volta g e Drop - V
Re ve rse Volta g e - V (V)
FM
R
Fig.1-Maximum Forward Voltage Drop Characteristics
Fig.3-Typical Junction Capacitance
Vs. Reverse Voltage
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.1
P
DM
t
1
t
Sing le Pulse
(The rm a l Re sista nc e )
2
Note s:
1. Duty fa c tor D = t / t
2
1
2. Pe a k T = PDM x Z
+ T
C
J
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t
, Re c ta ng ula r Pulse Dura tio n (Se c o nd s)
1
Fig.4-Maximum Thermal Impedance ZthJC Characteristics
www.irf.com
3
100BGQ030, 100BGQ030J
Bulletin PD-20996 rev. E 12/02
100
80
60
40
20
0
150
140
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
130
120
110
100
90
RMS Limit
DC
Sq ua re wa ve (D = 0.50)
80% Ra te d V a p p lie d
R
se e note (3)
80
0
20 40 60 80 100 120 140 160
Ave ra g e Forwa rd Curre nt - I (A)
0
20 40 60 80 100 120 140 160
Ave ra g e Forwa rd Curre nt - I (A)
F(AV)
F(AV)
Fig.5-MaximumAllowableCaseTemperature
Vs.AverageForwardCurrent
Fig.6-Forward Power Loss Characteristics
10000
1000
At Any Ra te d Loa d C ond ition
And With Ra te d V
Following Surg e
Ap p lie d
RRM
100
10
100
1000
10000
Sq ua re Wa ve Pulse Dura tion - t (m ic rose c )
p
Fig.7-MaximumNon-RepetitiveSurgeCurrent
L
HIG H-SPEED
SWITCH
IRFP460
DUT
FREE-WHEEL
DIO DE
Rg = 25 ohm
Vd = 25 Volt
+
C URRENT
MONITOR
40HFL40S02
Fig.8-Unclamped Inductive Test Circuit
(3) Formula used: TC = TJ - (Pd + PdREV) x RthJC
;
Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR
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4
100BGQ030, 100BGQ030J
Bulletin PD-20996 rev. E 12/02
Outline Table
CaseStyle PowIRtabTM
Dimensions in millimeters and (inches)
CaseStyle PowIRtabTM"J"version
Dimensions in millimeters and (inches)
www.irf.com
5
100BGQ030, 100BGQ030J
Bulletin PD-20996 rev. E 12/02
Ordering Information Table
Device Code
100 BGQ 030
J
2
4
1
3
1
2
3
4
6
-
-
-
-
Current Rating
Essential Part Number
Voltage code: Code = V
none = PowIRtabTMstandard
RRM
J
= ShortLeadVersion
***************************************************
Thismodelhasbeendevelopedby
This model
Wizard SPICE MODEL GENERATOR(1999)
(InternationalRectifier Corporation)
contains ProprietaryInformation
***************************************************
SPICE Model Diode is composed by a
simple diode plus paralled VCG2T
***************************************************
.SUBCKT100bgq30 ANOCAT
D1 ANO 1 DMOD (0.24359)
*Define diode model
.MODEL DMOD D(IS=1.07823961851333E-04A,N=1.0394338412755,BV=30V,
+IBV=0.125061622097042A,RS=0.000316667,CJO=2.88578786999339E-08,
+VJ=1.30385147429609,XTI=2,EG=0.697469117594151)
*****************************************************
*ImplementationofVCG2T
VX 1 2 DC 0V
R1 2 CAT TRES 1E-6
.MODEL TRES RES(R=1,TC1=6.48759701319255)
GP1 ANO CAT VALUE={-ABS(I(VX))*(EXP((((-2.690102E-03/
6.487597)*((V(2,CAT)*1E6)/(I(VX)+1E-6)-1))+1)*9.995116E-02*ABS(V(ANO,CAT)))-1)}
*****************************************************
.ENDS100bgq30
ThermalModelSubcircuit
.SUBCKT 100bgq30T 5 1
CTHERM1
CTHERM2
CTHERM3
CTHERM4
5
4
3
2
4
3
2
1
3.02E+3
4.96E+1
3.84E+4
3.02E+6
RTHERM1
RTHERM2
RTHERM3
RTHERM4
5
4
3
2
4
3
2
1
1.02E-1
3.83E-1
6.09E-2
1.00E-5
.ENDS100bgq30T
www.irf.com
6
100BGQ030, 100BGQ030J
Bulletin PD-20996 rev. E 12/02
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 12/02
www.irf.com
7
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