1EDC05I12AHXUMA1
更新时间：2024-12-03 18:22:20
品牌：INFINEON
描述：Buffer/Inverter Based Peripheral Driver, 1.3A, PDSO8, DSO-8
概述
规格参数
数据手册1EDC05I12AHXUMA1 概述
Buffer/Inverter Based Peripheral Driver, 1.3A, PDSO8, DSO-8 MOSFET 驱动器
1EDC05I12AHXUMA1 规格参数
| 是否Rohs认证： | 符合 | 生命周期： | Active |
| 包装说明： | SOP, | Reach Compliance Code： | compliant |
| ECCN代码： | EAR99 | HTS代码： | 8542.39.00.01 |
| Factory Lead Time： | 1 week | 风险等级： | 1.72 |
| 内置保护： | OVER CURRENT; UNDER VOLTAGE | 接口集成电路类型： | BUFFER OR INVERTER BASED PERIPHERAL DRIVER |
| JESD-30 代码： | R-PDSO-G8 | JESD-609代码： | e4 |
| 长度： | 7.5 mm | 湿度敏感等级： | 3 |
| 功能数量： | 1 | 端子数量： | 8 |
| 最高工作温度： | 125 °C | 最低工作温度： | -40 °C |
| 输出电流流向： | SOURCE AND SINK | 标称输出峰值电流： | 1.3 A |
| 封装主体材料： | PLASTIC/EPOXY | 封装代码： | SOP |
| 封装形状： | RECTANGULAR | 封装形式： | SMALL OUTLINE |
| 峰值回流温度（摄氏度）： | NOT SPECIFIED | 座面最大高度： | 2.65 mm |
| 最大供电电压： | 17 V | 最小供电电压： | 3.1 V |
| 标称供电电压： | 5 V | 电源电压1-最大： | 35 V |
| 电源电压1-分钟： | 13 V | 电源电压1-Nom： | 15 V |
| 表面贴装： | YES | 温度等级： | AUTOMOTIVE |
| 端子面层： | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 端子形式： | GULL WING |
| 端子节距： | 1.27 mm | 端子位置： | DUAL |
| 处于峰值回流温度下的最长时间： | NOT SPECIFIED | 断开时间： | 0.33 µs |
| 接通时间： | 0.33 µs | 宽度： | 6.3 mm |
| Base Number Matches： | 1 |
1EDC05I12AHXUMA1 数据手册
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PDF下载1EDCxxI12AH and 1EDCxxH12AH
EiceDRIVER™ 1EDC Compact
Single channel IGBT gate driver IC in wide body package
Features
•
•
•
•
•
•
•
•
Single channel isolated IGBT driver
For 600 V/650 V/1200 V IGBTs, MOSFETs and SiC MOSFETs
Up to 10 A typical peak current at rail-to-rail outputs
Separate source and sink outputs
Galvanically isolated coreless transformer driver
Wide input voltage operating range
Suitable for operation at high ambient temperature
Recognized under UL 1577 with an insulation test voltage of VISO = 3000 V for 1 s
Potential applications
•
•
•
•
AC and brushless DC motor drives
High voltage DC/DC-converter and DC/AC-inverter
Induction heating resonant application
UPS-systems, welding and solar
Product type
1EDC05I12AH
1EDC20H12AH
1EDC20I12AH
1EDC40I12AH
1EDC60H12AH
1EDC60I12AH
Output current configuration
Package
±0.5 A
±2.0 A
±2.0 A
±4.0 A
±6.0 A
±6.0 A
PG-DSO-8-59
PG-DSO-8-59
PG-DSO-8-59
PG-DSO-8-59
PG-DSO-8-59
PG-DSO-8-59
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Datasheet
Please read the Important Notice and Warnings at the end of this document
2.0
www.infineon.com/eicedriver
2017-07-17
EiceDRIVER™ 1EDC Compact
Single channel IGBT gate driver IC in wide body package
Description
Description
The 1EDCxxI12AH and 1EDCxxH12AH are galvanically isolated single channel IGBT driver in a PG-DSO-8-59
package that provide output currents up to 10 A at separated output pins.
The input logic pins operate on a wide input voltage range from 3 V to 15 V using scaled CMOS threshold levels
to support even 3.3 V microcontrollers.
Data transfer across the isolation barrier is realized by the coreless transformer technology.
Every driver family member comes with logic input and driver output undervoltage lockout (UVLO) and active
shutdown.
VCC1
VCC2,H
OUT+
IN+
IN-
Single channel
EiceDRIVERTM with separate
output
OUT-
GND1
VCC1
GND2,H
VCC2,L
Control
OUT+
IN+
IN-
Single channel
EiceDRIVERTM with separate
output
OUT-
GND1
GND2,L
Figure 1
Typical application
Datasheet
2
2.0
2017-07-17
EiceDRIVER™ 1EDC Compact
Single channel IGBT gate driver IC in wide body package
Table of contents
Table of contents
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2
2.1
2.2
Pin configuration and functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
Pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Pin functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
3
3.1
3.2
3.3
3.3.1
3.3.2
3.3.3
3.4
Functional description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Protection features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Undervoltage lockout (UVLO) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Active shut-down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Short circuit clamping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
Non-inverting and inverting inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Driver outputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
3.5
4
4.1
4.2
4.3
4.3.1
4.3.2
4.3.3
4.3.4
4.3.5
4.3.6
Electrical parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Operating parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Voltage supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Logic input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Gate driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Short circuit clamping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Dynamic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Active shut down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5
6
Recognized under UL 1577 (File E311313) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
7
7.1
7.2
Application notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Reference layout for thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Printed circuit board guidelines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Datasheet
3
2.0
2017-07-17
EiceDRIVER™ 1EDC Compact
Single channel IGBT gate driver IC in wide body package
Block diagram
1
Block diagram
OUT-
8
7
&
VCC1
1
2
UVLO
GND2
VCC2
Shoot
through
protection
input
filter
IN+
&
active
filter
OUT+
TX
RX
GND1
VCC1
input
filter
IN-
3
4
VCC2
GND2
UVLO
6
5
GND1
Figure 2
Block diagram
Datasheet
4
2.0
2017-07-17
EiceDRIVER™ 1EDC Compact
Single channel IGBT gate driver IC in wide body package
Pin configuration and functionality
2
Pin configuration and functionality
2.1
Pin configuration
Table 1
Pin configuration
Pin No. Name
Function
1
2
3
4
5
6
7
8
VCC1
IN+
Positive logic supply
Non-inverted driver input (active high)
Inverted driver input (active low)
Logic ground
IN-
GND1
GND2
VCC2
OUT+
OUT-
Power ground
Positive power supply output side
Driver source output
Driver sink output
1
2
3
4
VCC1
IN+
OUT-
OUT+
VCC2
GND2
8
7
6
5
IN-
GND1
Figure 3
PG-DSO-8-59 (top view)
2.2
Pin functionality
VCC1
Logic input supply voltage of 3.3 V up to 15 V wide operating range.
IN+ non inverting driver input
IN+ non-inverted control signal for driver output if IN- is set to low. (Output sourcing active at IN+ = high and
IN- = low)
Due to internal filtering a minimum pulse width is defined to ensure robustness against noise at IN+. An internal
weak pull-down-resistor favors off-state.
IN- inverting driver input
IN- inverted control signal for driver output if IN+ is set to high. (Output sourcing active at IN- = low and
IN+ = high)
Due to internal filtering a minimum pulse width is defined to ensure robustness against noise at IN-. An internal
weak pull-up-resistor favors off-state.
Datasheet
5
2.0
2017-07-17
EiceDRIVER™ 1EDC Compact
Single channel IGBT gate driver IC in wide body package
Pin configuration and functionality
GND1
Ground connection of input circuit.
GND2 reference ground
Reference ground of the output driving circuit.
In case of a bipolar supply (positive and negative voltage referred to IGBT emitter) this pin is connected to the
negative supply voltage.
VCC2
Positive power supply pin of output driving circuit. A proper blocking capacitor has to be placed close to this
supply pin.
OUT+ driver source output
Driver source output pin to turn on external IGBT. During on-state the driving output is switched to VCC2.
Switching of this output is controlled by IN+ and IN-. This output will also be turned off at an UVLO event.
During turn off the OUT+ terminal is able to sink approx. 100 mA. In case of an unconnected OUT- the complete
gate charge is discharged through this channel resulting in a slow turn off.
OUT- driver sink output
Driver sink output pin to turn off external IGBT. During off-state the driving output is switched to GND2.
Switching of this output is controlled by IN+ and IN-. In case of UVLO an active shut down keeps the output
voltage at a low level.
Datasheet
6
2.0
2017-07-17
EiceDRIVER™ 1EDC Compact
Single channel IGBT gate driver IC in wide body package
Functional description
3
Functional description
3.1
Introduction
The 1EDIxxI12AH and 1EDIxxH12AH are general purpose IGBT gate drivers. Basic control and protection features
support fast and easy design of highly reliable systems.
The integrated galvanic isolation between control input logic and driving output stage grants additional safety.
Its wide input voltage supply range supports the direct connection of various signal sources like DSPs and
microcontrollers.
The separated rail-to-rail driver outputs simplify gate resistor selection, save an external high current bypass
diode and enhance dV/dt control.
3.2
Supply
The driver can operate over a wide supply voltage range, either unipolar or bipolar.
+5V
+15V
VCC1
VCC2
1µ
100n
10R
3R3
OUT+
OUT-
SGND
IN
GND1
IN+
1µ
0V
IN-
GND2
-8V
Figure 4
Application example bipolar supply
With bipolar supply the driver is typically operated with a positive voltage of 15 V at VCC2 and a negative voltage
of -8 V at GND2 relative to the emitter of the IGBT. Negative supply can help to prevent a dynamic turn on due to
the additional charge which is generated from IGBT’s input capacitance.
+5V
+15V
VCC1
VCC2
1µ
10R
100n
OUT+
OUT-
SGND
IN
GND1
IN+
3R3
IN-
GND2
Figure 5
Application example unipolar supply
For unipolar supply configuration the driver is typically supplied with a positive voltage of 15 V at VCC2. In this
case, careful evaluation for turn off gate resistor selection is recommended to avoid dynamic turn on.
Datasheet
7
2.0
2017-07-17
EiceDRIVER™ 1EDC Compact
Single channel IGBT gate driver IC in wide body package
Functional description
3.3
Protection features
3.3.1
Undervoltage lockout (UVLO)
IN+
VUVLOH1
VUVLOL1
VCC1
VUVLOH2
VUVLOL2
VCC2
OUT
Figure 6
UVLO behavior
To ensure correct switching of IGBTs the device is equipped with an undervoltage lockout for input and output
independently. Operation starts only aꢀer both VCC levels have increased beyond the respective VUVLOH levels.
If the power supply voltage VVCC1 of the input chip drops below VUVLOL1 a turn-off signal is sent to the output chip
before power-down. The IGBT is switched off and the signals at IN+ and IN- are ignored until VVCC1 reaches the
power-up voltage VUVLOH1 again.
If the power supply voltage VVCC2 of the output chip goes down below VUVLOL2 the IGBT is switched off and
signals from the input chip are ignored until VVCC2 reaches the power-up voltage VUVLOH2 again.
Note:
VVCC2 is always referred to GND2 and does not differentiate between unipolar or bipolar supply.
3.3.2
Active shut-down
The active shut-down feature ensures a safe IGBT off-state in case the output chip is not connected to the power
supply or an undervoltage lockout is in effect. The IGBT gate is clamped at OUT- to GND2.
3.3.3
Short circuit clamping
During short circuit the IGBT’s gate voltage tends to rise because of the feedback via the Miller capacitance. An
additional protection circuit connected to OUT+ limits this voltage to a value slightly higher than the supply
voltage. A maximum current of 500 mA may be fed back to the supply through this path for 10 μs. If higher
currents are expected or tighter clamping is desired external Schottky diodes may be added.
Datasheet
8
2.0
2017-07-17
EiceDRIVER™ 1EDC Compact
Single channel IGBT gate driver IC in wide body package
Functional description
3.4
Non-inverting and inverting inputs
IN+
IN-
OUT
Figure 7
Logic input to output switching behavior
There are two possible input modes to control the IGBT. At non-inverting mode IN+ controls the driver output
while IN- is set to low. At inverting mode IN- controls the driver output while IN+ is set to high. A minimum input
pulse width is defined to filter occasional glitches.
3.5
Driver outputs
The output driver section uses MOSFETs to provide a rail-to-rail output. This feature permits that tight control of
gate voltage during on-state and short circuit can be maintained as long as the driver’s supply is stable. Due to
the low internal voltage drop, switching behavior of the IGBT is predominantly governed by the gate resistor.
Furthermore, it reduces the power to be dissipated by the driver.
Datasheet
9
2.0
2017-07-17
EiceDRIVER™ 1EDC Compact
Single channel IGBT gate driver IC in wide body package
Electrical parameters
4
Electrical parameters
4.1
Absolute maximum ratings
Note:
Absolute maximum ratings are defined as ratings, which when being exceeded may lead to
destruction of the integrated circuit. Unless otherwise noted all parameters refer to GND1.
Table 2
Absolute maximum ratings
Parameter
Symbol
Values
Max.
40
Unit Note /
Test Condition
Min.
1)
1)
Power supply output side
Gate driver output
VVCC2
VOUT
VVCC1
VLogicIN
VGND2
TJ
-0.3
V
VGND2-0.3 VVCC2+0.3
V
Positive power supply input side
Logic input voltages (IN+,IN-)
Input to output isolation voltage (GND2)
Junction temperature
-0.3
-0.3
-1200
-40
18.0
18.0
1200
150
150
–
V
–
V
–
V
GND2 - GND1
°C
°C
–
–
Storage temperature
TS
-55
Comparative tracking index
CTI
400
IEC 60601-1: Material
group II
Power dissipation (Input side)
Power dissipation (Output side)
Thermal resistance (Input side)
Thermal resistance (Output side)
ESD capability
PD, IN
–
–
–
–
–
–
25
400
145
165
2
mW
mW
K/W
K/W
kV
2) @TA = 25°C
2) @TA = 25°C
2) @TA = 85°C
2) @TA = 85°C
PD, OUT
RTHJA,IN
RTHJA,OUT
VESD,HBM
VESD,CDM
Human body model3)
1
kV
Charged device
model4)
1
With respect to GND2.
2
See Figure 11 for reference layouts for these thermal data. Thermal performance may change significantly
with layout and heat dissipation of components in close proximity.
According to EIA/JESD22-A114-C (discharging a 100 pF capacitor through a 1.5 kΩ series resistor).
According to EIA/JESD22-C101 (specified waveform characteristics)
3
4
Datasheet
10
2.0
2017-07-17
EiceDRIVER™ 1EDC Compact
Single channel IGBT gate driver IC in wide body package
Electrical parameters
4.2
Operating parameters
Note:
Within the operating range the IC operates as described in the functional description. Unless
otherwise noted all parameters refer to GND1.
Table 3
Operating parameters
Parameter
Symbol
Values
Max.
Unit Note /
Test Condition
Min.
13
3.1
-0.3
–
5)
Power supply output side
Power supply input side
VVCC2
VVCC1
VLogicIN
fsw
35
V
17
V
–
Logic input voltages (IN+,IN-)
Switching frequency
17
V
–
6)7)
1.0
125
4.8
100
MHz
Ambient temperature
TA
-40
–
°C
–
Thermal coefficient, junction-top
Common mode transient immunity (CMTI)
Ψth,jt
|dVISO/dt|
K/W 7) at TA = 85°C
kV/μs 7) at 1000 V
–
4.3
Electrical characteristics
Note:
The electrical characteristics include the spread of values in supply voltages, load and junction
temperatures given below. Typical values represent the median values at TA = 25°C. Unless otherwise
noted all voltages are given with respect to their respective GND (GND1 for pins 1 to 3, GND2 for pins 6
to 8).
4.3.1
Voltage supply
Table 4
Voltage supply
Parameter
Symbol
Values
Typ.
Unit Note or Test
Condition
Min.
Max.
3.1
UVLO threshold input chip
UVLO hysteresis input chip
VUVLOH1
VUVLOL1
VHYS1
–
2.85
V
V
V
–
–
–
2.55
0.09
2.75
0.1
–
–
(VUVLOH1 - VUVLOL1
)
8)
8)
UVLO threshold output chip (IGBT VUVLOH2
–
12.0
11.1
12.7
–
V
V
supply)
VUVLOL2
10.5
5
With respect to GND2.
do not exceed max. power dissipation
Parameter is not subject to production test - verified by design/characterization
With respect to GND2.
6
7
8
Datasheet
11
2.0
2017-07-17
EiceDRIVER™ 1EDC Compact
Single channel IGBT gate driver IC in wide body package
Electrical parameters
Table 4
Voltage supply (continued)
Symbol
Parameter
Values
Typ.
Unit Note or Test
Condition
Min.
0.7
Max.
UVLO hysteresis output chip
(VUVLOH2 - VUVLOL2
VHYS2
IQ1
0.85
–
V
–
)
Quiescent current input chip
–
0.65
1.2
1.0
2.0
mA
VVCC1 = 5 V
IN+ = High, IN- = Low
=>OUT = High
Quiescent current output chip
IQ2
–
mA
VVCC2 = 15 V
IN+ = High, IN- = Low
=>OUT = High
4.3.2
Logic input
V
IN+L ,VIN-L
VIN+H ,VIN-H
0.7×15V
10
UVLO
No driver
operation
5
0.3×15V
0.7×5V
0.7×3.3V
0.3×5V
0.3×3.3V
15
10
3.3
5
VVCC1
Figure 8
VCC1 scaled input threshold voltage of IN+ and IN-
Beginning from the input undervoltage lockout level, threshold levels for IN+ and IN- are scaled to VVCC1. The
high input threshold is 70% of VVCC1 and the low input threshold is at 30% of VVCC1
.
Table 5
Logic input
Parameter
Symbol
Values
Typ.
Unit Note or Test
Condition
Min.
Max.
0.3 ×
VVCC1
–
IN+,IN- low input voltage
IN+,IN- high input voltage
VIN+L
VIN-L
,
–
–
–
9)3.1 V ≤ VVCC1 ≤ 17 V
VIN+H
VIN-H
,
0.7 ×
VVCC1
9
Parameter is not subject to production test - verified by design/characterization
Datasheet
12
2.0
2017-07-17
EiceDRIVER™ 1EDC Compact
Single channel IGBT gate driver IC in wide body package
Electrical parameters
Table 5
Logic input (continued)
Symbol
Parameter
Values
Typ.
Unit Note or Test
Condition
Min.
Max.
1.5
IN+,IN- low input voltage
IN+,IN- high input voltage
VIN+L
VIN-L
,
–
–
–
V
V
VVCC1 = 5.0 V
VIN+H
VIN-H
,
3.5
–
IN- input current
IN+ input current
IIN-
–
–
70
70
200
200
μA
μA
VVCC1 = 5.0 V, VIN-
GND1
=
IIN+
VVCC1 = 5.0 V, VIN+
VVCC1
=
4.3.3
Gate driver
Note:
minimum Peak current rating valid over temperature range!
Table 6
Gate driver
Parameter
Symbol
Values
Typ.
Unit Note or Test
Condition
Min.
Max.
High level output peak current
(source)
IOUT+,PEAK
–
A
10)IN+ = High,
IN- = Low,
1EDC05I12AH
1EDC20I12AH
1EDC20H12AH
1EDC40I12AH
1EDC60I12AH
1EDC60H12AH
0.5
1.3
4.0
4.0
7.5
10.0
10.0
VVCC2 = 15 V
2.0
2.0
4.0
6.0
6.0
Low level output peak current
(sink)
IOUT-,PEAK
–
A
10)IN+ = Low,
IN- = Low,
1EDC05I12AH
1EDC20I12AH
1EDC20H12AH
1EDC40I12AH
1EDC60I12AH
1EDC60H12AH
0.5
2.0
2.0
4.0
6.0
6.0
0.9
3.5
3.5
6.8
9.4
9.4
VVCC2 = 15 V
10
specified min. output current is forced; voltage across the device V(VCC2 - OUT+) or V(OUT- - GND2) < VVCC2
.
Datasheet
13
2.0
2017-07-17
EiceDRIVER™ 1EDC Compact
Single channel IGBT gate driver IC in wide body package
Electrical parameters
4.3.4
Short circuit clamping
Table 7
Short circuit clamping
Parameter
Symbol
Values
Typ.
Unit Note or Test
Condition
Min.
Max.
1.3
Clamping voltage (OUT+)
VCLPout
–
0.9
V
11)IN+ = High, IN- =
Low,
(VOUT+ - VVCC2
)
OUT = High
IOUT = 500 mA,
(pulse test tCLPmax
10 μs)
=
4.3.5
Dynamic characteristics
Dynamic characteristics are measured with VVCC1 = 5 V and VVCC2 = 15 V.
50%
IN+
80%
50%
20%
OUT
TRISE
TFALL
TPDON
TPDOFF
Figure 9
Propagation delay, rise and fall time
Table 8
Dynamic characteristics
Symbol
Parameter
Values
Typ.
Unit Note or Test
Condition
Min.
270
Max.
330
Input IN to output propagation
delay ON
TPDON
300
ns
ns
ns
ns
CLOAD = 100 pF
VIN+ = 50%,
VOUT=50% @25°C
1EDC05I12AH,
1EDC20I12AH,
1EDC40I12AH,
1EDC60I12AH
Input IN to output propagation
delay OFF
TPDOFF
TPDISTO
270
-30
230
300
5
330
40
–
Input IN to output propagation
delay distortion (TPDOFF - TPDON
)
Input pulse suppression time IN+, TMININ+
,
240
IN-
TMININ-
11
With respect to GND2.
Datasheet
14
2.0
2017-07-17
EiceDRIVER™ 1EDC Compact
Single channel IGBT gate driver IC in wide body package
Recognized under UL 1577 (File E311313)
Table 8
Dynamic characteristics (continued)
Symbol
Parameter
Values
Typ.
Unit Note or Test
Condition
Min.
Max.
142
Input IN to output propagation
delay ON
TPDON
95
120
ns
ns
ns
ns
ns
ns
ns
CLOAD = 100 pF
VIN+ = 50%,
VOUT=50% @25°C
1EDC20H12AH,
1EDC60H12AH
Input IN to output propagation
delay OFF
TPDOFF
TPDISTO
105
-35
30
–
125
-5
40
–
150
25
–
Input IN to output propagation
delay distortion (TPDOFF - TPDON
)
Input Pulse Suppressiontime IN+, TMININ+
,
IN-
TMININ-
12)
Input IN to output propagation
delay ON variation due to temp
TPDONt
14
14
8
C
LOAD
= 100 pF
VIN+ = 50%,
VOUT=50%
Input IN to output propagation
delay OFF variation due to temp
TPDONt
–
–
Input IN to output propagation
delay distortion variation due to
TPDISTOt
–
–
temp (TPDOFF-TPDON
)
Rise time
TRISE
TFALL
5
4
10
9
20
19
ns
ns
CLOAD = 1 nF
VL20%, VH 80%
Fall time
4.3.6
Active shut down
Table 9
Active shut down
Parameter
Symbol
Values
Typ.
2.0
Unit Note or Test
Condition
Min.
Max.
2.3
13)
Active shut down voltage
VACTSD
–
V
I
/IOUT-,PEAK=0.1,
OUT-
VCC2 open
5
Recognized under UL 1577 (File E311313)
Table 10
Recognized under UL 1577
Description
Symbol
VISO
Characteristic
2500
Unit
Insulation Withstand Voltage / 1 min
Insulation Test Voltage / 1 s
Vrms
Vrms
VISO
3000
12
Parameter is not subject to production test - verified by design/characterization
With respect to GND2.
13
Datasheet
15
2.0
2017-07-17
EiceDRIVER™ 1EDC Compact
Single channel IGBT gate driver IC in wide body package
Package outline
6
Package outline
DOCUMENT NO.
Z8B00179262
0
MILLIMETERS
DIM
INCHES
SCALE
MIN
-
MAX
MIN
-
MAX
0.104
0.008
0.096
0.020
0.013
0.252
0.417
0.299
A
A1
A2
b
2.65
0.20
2.45
0.50
0.32
6.40
10.60
7.60
2
0.10
2.25
0.30
0.23
6.20
10.00
7.40
0.004
0.089
0.012
0.009
0.244
0.394
0.291
0
2
4mm
c
D
EUROPEAN PROJECTION
E
E1
e
1.27 BSC
8
0.050 BSC
8
N
L
0.50
0.90
0.020
0.035
L2
h
0.25 BSC
0.010 BSC
ISSUE DATE
05.11.2015
0.25
0.45
0.010
0.018
Ĭ
ꢀ
ꢁ
ꢀ
ꢁ
REVISION
01
ccc
ddd
0.10
0.25
0.004
0.010
Figure 10 PG-DSO-8-59 (Plastic (green) dual small outline package)
Datasheet
16
2.0
2017-07-17
EiceDRIVER™ 1EDC Compact
Single channel IGBT gate driver IC in wide body package
Application notes
7
Application notes
7.1
Reference layout for thermal data
Figure 11 Reference layout for fhermal data (Copper thickness 35 μm)
This PCB layout represents the reference layout used for the thermal characterization.
Pin 4 (GND1) and pin 5 (GND2) require each a ground plane of 100 mm² for achieving maximum power
dissipation. The package is built to dissipate most of the heat generated through these pins.
The thermal coefficient junction-top (Ψth,jt) can be used to calculate the junction temperature at a given top
case temperature and driver power dissipation:
T j = Ψth,jt ⋅ PD + Ttop
7.2
Printed circuit board guidelines
The following factors should be taken into account for an optimum PCB layout.
•
•
Sufficient spacing should be kept between high voltage isolated side and low voltage side circuits.
The same minimum distance between two adjacent high-side isolated parts of the PCB should be
maintained to increase the effective isolation and to reduce parasitic coupling.
•
In order to ensure low supply ripple and clean switching signals, bypass capacitor trace lengths should be
kept as short as possible.
Revision history
Document
version
Date of
release
Description of changes
2.0
1.0
0.5
2017-07-17
2017-03-28
2016-10-04
•
•
•
UL file number added
Comparative tracking index added
initial version
Datasheet
17
2.0
2017-07-17
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2017-07-17
Published by
IMPORTANT NOTICE
WARNINGS
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical values
stated herein and/or any information regarding the
application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities of
any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer’s compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer’s products and any use of the product of
Infineon Technologies in customer’s applications.
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in
authorized representatives of Infineon Technologies,
Infineon Technologies’ products may not be used in
any applications where a failure of the product or
any consequences of the use thereof can reasonably
be expected to result in personal injury
Infineon Technologies AG
81726 Munich, Germany
a written document signed by
©
2017 Infineon Technologies AG
All Rights Reserved.
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Email: erratum@infineon.com
Document reference
IFX-acq1467706781217
The data contained in this document is exclusively
intended for technically trained staff. It is the
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evaluate the suitability of the product for the intended
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application.
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