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1EDC20H12AH

更新时间：2025-07-03 22:14:50

品牌：INFINEON

描述：Single channel IGBT gate driver IC in wide body package

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1EDC20H12AH 概述

Single channel IGBT gate driver IC in wide body package

1EDC20H12AH 数据手册

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1EDCxxI12AH and 1EDCxxH12AH

EiceDRIVER^™1EDC Compact

Single channel IGBT gate driver IC in wide body package

Features

•

Single channel isolated IGBT driver

For 600 V/650 V/1200 V IGBTs, MOSFETs and SiC MOSFETs

Up to 10 A typical peak current at rail-to-rail outputs

Separate source and sink outputs

Galvanically isolated coreless transformer driver

Wide input voltage operating range

Suitable for operation at high ambient temperature

Recognized under UL 1577 with an insulation test voltage of V_ISO= 3000 V for 1 s

Potential applications

•

AC and brushless DC motor drives

High voltage DC/DC-converter and DC/AC-inverter

Induction heating resonant application

UPS-systems, welding and solar

Product type

1EDC05I12AH

1EDC20H12AH

1EDC20I12AH

1EDC40I12AH

1EDC60H12AH

1EDC60I12AH

Output current configuration

Package

±0.5 A

±2.0 A

±4.0 A

±6.0 A

PG-DSO-8-59

Product validation

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.

Datasheet

Please read the Important Notice and Warnings at the end of this document

2.0

www.infineon.com/eicedriver

2017-07-17

EiceDRIVER^™1EDC Compact

Single channel IGBT gate driver IC in wide body package

Description

The 1EDCxxI12AH and 1EDCxxH12AH are galvanically isolated single channel IGBT driver in a PG-DSO-8-59

package that provide output currents up to 10 A at separated output pins.

The input logic pins operate on a wide input voltage range from 3 V to 15 V using scaled CMOS threshold levels

to support even 3.3 V microcontrollers.

Data transfer across the isolation barrier is realized by the coreless transformer technology.

Every driver family member comes with logic input and driver output undervoltage lockout (UVLO) and active

shutdown.

VCC1

VCC2,H

OUT+

IN+

IN-

Single channel

EiceDRIVER^TMwith separate

output

OUT-

GND1

VCC1

GND2,H

VCC2,L

Control

OUT+

IN+

IN-

Single channel

EiceDRIVER^TMwith separate

output

OUT-

GND1

GND2,L

Figure 1

Typical application

Datasheet

2.0

2017-07-17

EiceDRIVER^™1EDC Compact

Single channel IGBT gate driver IC in wide body package

Table of contents

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1

2.2

Pin configuration and functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5

Pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Pin functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5

3.1

3.2

3.3

3.3.1

3.3.2

3.3.3

3.4

Functional description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Protection features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Undervoltage lockout (UVLO) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Active shut-down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Short circuit clamping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8

Non-inverting and inverting inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Driver outputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9

3.5

4.1

4.2

4.3

4.3.1

4.3.2

4.3.3

4.3.4

4.3.5

4.3.6

Electrical parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Operating parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Voltage supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

Logic input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

Gate driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Short circuit clamping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

Dynamic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Active shut down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Recognized under UL 1577 (File E311313) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

7.1

7.2

Application notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17

Reference layout for thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17

Printed circuit board guidelines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Datasheet

2.0

2017-07-17

EiceDRIVER^™1EDC Compact

Single channel IGBT gate driver IC in wide body package

Block diagram

OUT-

VCC1

UVLO

GND2

VCC2

Shoot

through

protection

input

filter

IN+

active

filter

OUT+

GND1

VCC1

input

filter

IN-

VCC2

GND2

UVLO

GND1

Figure 2

Block diagram

Datasheet

2.0

2017-07-17

EiceDRIVER^™1EDC Compact

Single channel IGBT gate driver IC in wide body package

Pin configuration and functionality

2.1

Pin configuration

Table 1

Pin configuration

Pin No. Name

Function

VCC1

IN+

Positive logic supply

Non-inverted driver input (active high)

Inverted driver input (active low)

Logic ground

IN-

GND1

GND2

VCC2

OUT+

OUT-

Power ground

Positive power supply output side

Driver source output

Driver sink output

VCC1

IN+

OUT-

OUT+

VCC2

GND2

IN-

GND1

Figure 3

PG-DSO-8-59 (top view)

2.2

Pin functionality

VCC1

Logic input supply voltage of 3.3 V up to 15 V wide operating range.

IN+ non inverting driver input

IN+ non-inverted control signal for driver output if IN- is set to low. (Output sourcing active at IN+ = high and

IN- = low)

Due to internal filtering a minimum pulse width is defined to ensure robustness against noise at IN+. An internal

weak pull-down-resistor favors oﬀ-state.

IN- inverting driver input

IN- inverted control signal for driver output if IN+ is set to high. (Output sourcing active at IN- = low and

IN+ = high)

Due to internal filtering a minimum pulse width is defined to ensure robustness against noise at IN-. An internal

weak pull-up-resistor favors oﬀ-state.

Datasheet

2.0

2017-07-17

EiceDRIVER^™1EDC Compact

Single channel IGBT gate driver IC in wide body package

Pin configuration and functionality

GND1

Ground connection of input circuit.

GND2 reference ground

Reference ground of the output driving circuit.

In case of a bipolar supply (positive and negative voltage referred to IGBT emitter) this pin is connected to the

negative supply voltage.

VCC2

Positive power supply pin of output driving circuit. A proper blocking capacitor has to be placed close to this

supply pin.

OUT+ driver source output

Driver source output pin to turn on external IGBT. During on-state the driving output is switched to VCC2.

Switching of this output is controlled by IN+ and IN-. This output will also be turned oﬀ at an UVLO event.

During turn oﬀ the OUT+ terminal is able to sink approx. 100 mA. In case of an unconnected OUT- the complete

gate charge is discharged through this channel resulting in a slow turn oﬀ.

OUT- driver sink output

Driver sink output pin to turn oﬀ external IGBT. During oﬀ-state the driving output is switched to GND2.

Switching of this output is controlled by IN+ and IN-. In case of UVLO an active shut down keeps the output

voltage at a low level.

Datasheet

2.0

2017-07-17

EiceDRIVER^™1EDC Compact

Single channel IGBT gate driver IC in wide body package

Functional description

3.1

Introduction

The 1EDIxxI12AH and 1EDIxxH12AH are general purpose IGBT gate drivers. Basic control and protection features

support fast and easy design of highly reliable systems.

The integrated galvanic isolation between control input logic and driving output stage grants additional safety.

Its wide input voltage supply range supports the direct connection of various signal sources like DSPs and

microcontrollers.

The separated rail-to-rail driver outputs simplify gate resistor selection, save an external high current bypass

diode and enhance dV/dt control.

3.2

Supply

The driver can operate over a wide supply voltage range, either unipolar or bipolar.

+5V

+15V

VCC1

VCC2

1µ

100n

10R

3R3

OUT+

OUT-

SGND

GND1

IN+

1µ

IN-

GND2

-8V

Figure 4

Application example bipolar supply

With bipolar supply the driver is typically operated with a positive voltage of 15 V at VCC2 and a negative voltage

of -8 V at GND2 relative to the emitter of the IGBT. Negative supply can help to prevent a dynamic turn on due to

the additional charge which is generated from IGBT’s input capacitance.

+5V

+15V

VCC1

VCC2

1µ

10R

100n

OUT+

OUT-

SGND

GND1

IN+

3R3

IN-

GND2

Figure 5

Application example unipolar supply

For unipolar supply configuration the driver is typically supplied with a positive voltage of 15 V at VCC2. In this

case, careful evaluation for turn oﬀ gate resistor selection is recommended to avoid dynamic turn on.

Datasheet

2.0

2017-07-17

EiceDRIVER^™1EDC Compact

Single channel IGBT gate driver IC in wide body package

Functional description

3.3

Protection features

3.3.1

Undervoltage lockout (UVLO)

IN+

V^UVLOH1

V^UVLOL1

VCC1

V^UVLOH2

V^UVLOL2

VCC2

OUT

Figure 6

UVLO behavior

To ensure correct switching of IGBTs the device is equipped with an undervoltage lockout for input and output

independently. Operation starts only aꢀer both VCC levels have increased beyond the respective V_UVLOHlevels.

If the power supply voltage V_VCC1of the input chip drops below V_UVLOL1a turn-oﬀ signal is sent to the output chip

before power-down. The IGBT is switched oﬀ and the signals at IN+ and IN- are ignored until V_VCC1reaches the

power-up voltage V_UVLOH1again.

If the power supply voltage V_VCC2of the output chip goes down below V_UVLOL2the IGBT is switched oﬀ and

signals from the input chip are ignored until V_VCC2reaches the power-up voltage V_UVLOH2again.

Note:

V_VCC2is always referred to GND2 and does not diﬀerentiate between unipolar or bipolar supply.

3.3.2

Active shut-down

The active shut-down feature ensures a safe IGBT oﬀ-state in case the output chip is not connected to the power

supply or an undervoltage lockout is in eﬀect. The IGBT gate is clamped at OUT- to GND2.

3.3.3

Short circuit clamping

During short circuit the IGBT’s gate voltage tends to rise because of the feedback via the Miller capacitance. An

additional protection circuit connected to OUT+ limits this voltage to a value slightly higher than the supply

voltage. A maximum current of 500 mA may be fed back to the supply through this path for 10 μs. If higher

currents are expected or tighter clamping is desired external Schottky diodes may be added.

Datasheet

2.0

2017-07-17

EiceDRIVER^™1EDC Compact

Single channel IGBT gate driver IC in wide body package

Functional description

3.4

Non-inverting and inverting inputs

IN+

IN-

OUT

Figure 7

Logic input to output switching behavior

There are two possible input modes to control the IGBT. At non-inverting mode IN+ controls the driver output

while IN- is set to low. At inverting mode IN- controls the driver output while IN+ is set to high. A minimum input

pulse width is defined to filter occasional glitches.

3.5

Driver outputs

The output driver section uses MOSFETs to provide a rail-to-rail output. This feature permits that tight control of

gate voltage during on-state and short circuit can be maintained as long as the driver’s supply is stable. Due to

the low internal voltage drop, switching behavior of the IGBT is predominantly governed by the gate resistor.

Furthermore, it reduces the power to be dissipated by the driver.

Datasheet

2.0

2017-07-17

EiceDRIVER^™1EDC Compact

Single channel IGBT gate driver IC in wide body package

Electrical parameters

4.1

Absolute maximum ratings

Note:

Absolute maximum ratings are defined as ratings, which when being exceeded may lead to

destruction of the integrated circuit. Unless otherwise noted all parameters refer to GND1.

Table 2

Absolute maximum ratings

Parameter

Symbol

Values

Max.

Unit Note /

Test Condition

Min.

Power supply output side

Gate driver output

V_VCC2

V_OUT

V_VCC1

V_LogicIN

V_GND2

T_J

-0.3

V_GND2-0.3 V_VCC2+0.3

Positive power supply input side

Logic input voltages (IN+,IN-)

Input to output isolation voltage (GND2)

Junction temperature

-0.3

-1200

-40

18.0

1200

150

–

GND2 - GND1

°C

–

Storage temperature

T_S

-55

Comparative tracking index

CTI

400

IEC 60601-1: Material

group II

Power dissipation (Input side)

Power dissipation (Output side)

Thermal resistance (Input side)

Thermal resistance (Output side)

ESD capability

P_{D, IN}

–

400

145

165

K/W

²⁾@T_A= 25°C

²⁾@T_A= 85°C

P_{D, OUT}

R_THJA,IN

R_THJA,OUT

V_ESD,HBM

V_ESD,CDM

Human body model³⁾

Charged device

model⁴⁾

With respect to GND2.

See Figure 11 for reference layouts for these thermal data. Thermal performance may change significantly

with layout and heat dissipation of components in close proximity.

According to EIA/JESD22-A114-C (discharging a 100 pF capacitor through a 1.5 kΩ series resistor).

According to EIA/JESD22-C101 (specified waveform characteristics)

Datasheet

2.0

2017-07-17

EiceDRIVER^™1EDC Compact

Single channel IGBT gate driver IC in wide body package

Electrical parameters

4.2

Operating parameters

Note:

Within the operating range the IC operates as described in the functional description. Unless

otherwise noted all parameters refer to GND1.

Table 3

Operating parameters

Parameter

Symbol

Values

Max.

Unit Note /

Test Condition

Min.

3.1

-0.3

–

Power supply output side

Power supply input side

V_VCC2

V_VCC1

V_LogicIN

f_sw

–

Logic input voltages (IN+,IN-)

Switching frequency

–

6)7)

1.0

125

4.8

100

MHz

Ambient temperature

T_A

-40

–

°C

–

Thermal coeﬀicient, junction-top

Common mode transient immunity (CMTI)

Ψ_th,jt

|dV_ISO/dt|

K/W ⁷⁾at T_A= 85°C

kV/μs ⁷⁾at 1000 V

–

4.3

Electrical characteristics

Note:

The electrical characteristics include the spread of values in supply voltages, load and junction

temperatures given below. Typical values represent the median values at T_A= 25°C. Unless otherwise

noted all voltages are given with respect to their respective GND (GND1 for pins 1 to 3, GND2 for pins 6

to 8).

4.3.1

Voltage supply

Table 4

Voltage supply

Parameter

Symbol

Values

Typ.

Unit Note or Test

Condition

Min.

Max.

3.1

UVLO threshold input chip

UVLO hysteresis input chip

V_UVLOH1

V_UVLOL1

V_HYS1

–

2.85

–

2.55

0.09

2.75

0.1

–

(V_UVLOH1- V_UVLOL1

)

UVLO threshold output chip (IGBT V_UVLOH2

–

12.0

11.1

12.7

–

supply)

V_UVLOL2

10.5

With respect to GND2.

do not exceed max. power dissipation

Parameter is not subject to production test - verified by design/characterization

With respect to GND2.

Datasheet

2.0

2017-07-17

EiceDRIVER^™1EDC Compact

Single channel IGBT gate driver IC in wide body package

Electrical parameters

Table 4

Voltage supply (continued)

Symbol

Parameter

Values

Typ.

Unit Note or Test

Condition

Min.

0.7

Max.

UVLO hysteresis output chip

(V_UVLOH2- V_UVLOL2

V_HYS2

I_Q1

0.85

–

)

Quiescent current input chip

–

0.65

1.2

1.0

2.0

V_VCC1= 5 V

IN+ = High, IN- = Low

=>OUT = High

Quiescent current output chip

I_Q2

–

V_VCC2= 15 V

IN+ = High, IN- = Low

=>OUT = High

4.3.2

Logic input

_IN+L,V_IN-L

V_IN+H,V_IN-H

0.7×15V

UVLO

No driver

operation

0.3×15V

0.7×5V

0.7×3.3V

0.3×5V

0.3×3.3V

3.3

V_VCC1

Figure 8

VCC1 scaled input threshold voltage of IN+ and IN-

Beginning from the input undervoltage lockout level, threshold levels for IN+ and IN- are scaled to V_VCC1. The

high input threshold is 70% of V_VCC1and the low input threshold is at 30% of V_VCC1

Table 5

Logic input

Parameter

Symbol

Values

Typ.

Unit Note or Test

Condition

Min.

Max.

0.3 ×

V_VCC1

–

IN+,IN- low input voltage

IN+,IN- high input voltage

V_IN+L

V_IN-L

–

⁹⁾3.1 V ≤ V_VCC1≤ 17 V

V_IN+H

V_IN-H

0.7 ×

V_VCC1

Parameter is not subject to production test - verified by design/characterization

Datasheet

2.0

2017-07-17

EiceDRIVER^™1EDC Compact

Single channel IGBT gate driver IC in wide body package

Electrical parameters

Table 5

Logic input (continued)

Symbol

Parameter

Values

Typ.

Unit Note or Test

Condition

Min.

Max.

1.5

IN+,IN- low input voltage

IN+,IN- high input voltage

V_IN+L

V_IN-L

–

V_VCC1= 5.0 V

V_IN+H

V_IN-H

3.5

–

IN- input current

IN+ input current

I_IN-

–

200

μA

V_VCC1= 5.0 V, V_IN-

GND1

I_IN+

V_VCC1= 5.0 V, V_IN+

V_VCC1

4.3.3

Gate driver

Note:

minimum Peak current rating valid over temperature range!

Table 6

Gate driver

Parameter

Symbol

Values

Typ.

Unit Note or Test

Condition

Min.

Max.

High level output peak current

(source)

I_OUT+,PEAK

–

¹⁰⁾IN+ = High,

IN- = Low,

1EDC05I12AH

1EDC20I12AH

1EDC20H12AH

1EDC40I12AH

1EDC60I12AH

1EDC60H12AH

0.5

1.3

4.0

7.5

10.0

V_VCC2= 15 V

2.0

4.0

6.0

Low level output peak current

(sink)

I_OUT-,PEAK

–

¹⁰⁾IN+ = Low,

IN- = Low,

1EDC05I12AH

1EDC20I12AH

1EDC20H12AH

1EDC40I12AH

1EDC60I12AH

1EDC60H12AH

0.5

2.0

4.0

6.0

0.9

3.5

6.8

9.4

V_VCC2= 15 V

specified min. output current is forced; voltage across the device V_{(VCC2 - OUT+)}or V_{(OUT- - GND2)}< V_VCC2

Datasheet

2.0

2017-07-17

EiceDRIVER^™1EDC Compact

Single channel IGBT gate driver IC in wide body package

Electrical parameters

4.3.4

Short circuit clamping

Table 7

Short circuit clamping

Parameter

Symbol

Values

Typ.

Unit Note or Test

Condition

Min.

Max.

1.3

Clamping voltage (OUT+)

V_CLPout

–

0.9

¹¹⁾IN+ = High, IN- =

Low,

(V_OUT+- V_VCC2

)

OUT = High

I_OUT= 500 mA,

(pulse test t_CLPmax

10 μs)

4.3.5

Dynamic characteristics

Dynamic characteristics are measured with V_VCC1= 5 V and V_VCC2= 15 V.

50%

IN+

80%

50%

20%

OUT

T^RISE

T^FALL

T^PDON

T^PDOFF

Figure 9

Propagation delay, rise and fall time

Table 8

Dynamic characteristics

Symbol

Parameter

Values

Typ.

Unit Note or Test

Condition

Min.

270

Max.

330

Input IN to output propagation

delay ON

T_PDON

300

C_LOAD= 100 pF

V_IN+= 50%,

V_OUT=50% @25°C

1EDC05I12AH,

1EDC20I12AH,

1EDC40I12AH,

1EDC60I12AH

Input IN to output propagation

delay OFF

T_PDOFF

T_PDISTO

270

-30

230

300

330

–

Input IN to output propagation

delay distortion (T_PDOFF- T_PDON

)

Input pulse suppression time IN+, T_MININ+

240

IN-

T_MININ-

With respect to GND2.

Datasheet

2.0

2017-07-17

EiceDRIVER^™1EDC Compact

Single channel IGBT gate driver IC in wide body package

Recognized under UL 1577 (File E311313)

Table 8

Dynamic characteristics (continued)

Symbol

Parameter

Values

Typ.

Unit Note or Test

Condition

Min.

Max.

142

Input IN to output propagation

delay ON

T_PDON

120

C_LOAD= 100 pF

V_IN+= 50%,

V_OUT=50% @25°C

1EDC20H12AH,

1EDC60H12AH

Input IN to output propagation

delay OFF

T_PDOFF

T_PDISTO

105

-35

–

125

-5

–

150

–

Input IN to output propagation

delay distortion (T_PDOFF- T_PDON

)

Input Pulse Suppressiontime IN+, T_MININ+

IN-

T_MININ-

12)

Input IN to output propagation

delay ON variation due to temp

T_PDONt

LOAD

= 100 pF

V_IN+= 50%,

V_OUT=50%

Input IN to output propagation

delay OFF variation due to temp

T_PDONt

–

Input IN to output propagation

delay distortion variation due to

T_PDISTOt

–

temp (T_PDOFF-T_PDON

)

Rise time

T_RISE

T_FALL

C_LOAD= 1 nF

V_L20%, V_H80%

Fall time

4.3.6

Active shut down

Table 9

Active shut down

Parameter

Symbol

Values

Typ.

2.0

Unit Note or Test

Condition

Min.

Max.

2.3

13)

Active shut down voltage

V_ACTSD

–

/I_OUT-,PEAK=0.1,

OUT-

V_CC2open

Recognized under UL 1577 (File E311313)

Table 10

Recognized under UL 1577

Description

Symbol

V_ISO

Characteristic

2500

Unit

Insulation Withstand Voltage / 1 min

Insulation Test Voltage / 1 s

V_rms

V_ISO

3000

Parameter is not subject to production test - verified by design/characterization

With respect to GND2.

Datasheet

2.0

2017-07-17

EiceDRIVER^™1EDC Compact

Single channel IGBT gate driver IC in wide body package

Package outline

DOCUMENT NO.

Z8B00179262

MILLIMETERS

DIM

INCHES

SCALE

MIN

MAX

MIN

MAX

0.104

0.008

0.096

0.020

0.013

0.252

0.417

0.299

2.65

0.20

2.45

0.50

0.32

6.40

10.60

7.60

0.10

2.25

0.30

0.23

6.20

10.00

7.40

0.004

0.089

0.012

0.009

0.244

0.394

0.291

4mm

EUROPEAN PROJECTION

1.27 BSC

0.050 BSC

0.50

0.90

0.020

0.035

0.25 BSC

0.010 BSC

ISSUE DATE

05.11.2015

0.25

0.45

0.010

0.018

ꢀ

ꢁ

ꢀ

ꢁ

REVISION

ccc

ddd

0.10

0.25

0.004

0.010

Figure 10 PG-DSO-8-59 (Plastic (green) dual small outline package)

Datasheet

2.0

2017-07-17

EiceDRIVER^™1EDC Compact

Single channel IGBT gate driver IC in wide body package

Application notes

7.1

Reference layout for thermal data

Figure 11 Reference layout for fhermal data (Copper thickness 35 μm)

This PCB layout represents the reference layout used for the thermal characterization.

Pin 4 (GND1) and pin 5 (GND2) require each a ground plane of 100 mm² for achieving maximum power

dissipation. The package is built to dissipate most of the heat generated through these pins.

The thermal coeﬀicient junction-top (Ψ_th,jt) can be used to calculate the junction temperature at a given top

case temperature and driver power dissipation:

T _j= Ψ_th,jt⋅ P_D+ T_top

7.2

Printed circuit board guidelines

The following factors should be taken into account for an optimum PCB layout.

•

Suﬀicient spacing should be kept between high voltage isolated side and low voltage side circuits.

The same minimum distance between two adjacent high-side isolated parts of the PCB should be

maintained to increase the eﬀective isolation and to reduce parasitic coupling.

•

In order to ensure low supply ripple and clean switching signals, bypass capacitor trace lengths should be

kept as short as possible.

Revision history

Document

version

Date of

release

Description of changes

2.0

1.0

0.5

2017-07-17

2017-03-28

2016-10-04

•

UL file number added

Comparative tracking index added

initial version

Datasheet

2.0

2017-07-17

Trademarks

All referenced product or service names and trademarks are the property of their respective owners.

Edition 2017-07-17

Published by

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WARNINGS

The information given in this document shall in no

event be regarded as a guarantee of conditions or

characteristics (“Beschaﬀenheitsgarantie”) .

With respect to any examples, hints or any typical values

stated herein and/or any information regarding the

application of the product, Infineon Technologies

hereby disclaims any and all warranties and liabilities of

any kind, including without limitation warranties of

non-infringement of intellectual property rights of any

third party.

In addition, any information given in this document is

subject to customer’s compliance with its obligations

stated in this document and any applicable legal

requirements, norms and standards concerning

customer’s products and any use of the product of

Infineon Technologies in customer’s applications.

Due to technical requirements products may contain

dangerous substances. For information on the types

in question please contact your nearest Infineon

Technologies oﬀice.

Except as otherwise explicitly approved by Infineon

Technologies in a written document signed by

authorized representatives of Infineon Technologies,

Infineon Technologies’ products may not be used in

any applications where a failure of the product or

any consequences of the use thereof can reasonably

be expected to result in personal injury

Infineon Technologies AG

81726 Munich, Germany

2017 Infineon Technologies AG

Do you have a question about any

aspect of this document?

Email: erratum@infineon.com

Document reference

IFX-acq1467706781217

The data contained in this document is exclusively

intended for technically trained staﬀ. It is the

responsibility of customer’s technical departments to

evaluate the suitability of the product for the intended

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application.

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