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替代型号ISL6608IBZ-T 概述
Synchronous Rectified MOSFET Driver 同步整流MOSFET驱动器 电源管理
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®
Data Sheet
March 2004
FN9140.1
Synchronous Rectified MOSFET Driver
with Pre-Biased Load Startup Capability
Features
• Dual MOSFET Drives for Synchronous Rectified Bridge
The ISL6608 is a high frequency, MOSFET driver optimized
to drive two N-Channel power MOSFETs in a synchronous-
rectified buck converter topology. This driver combined with
an Intersil HIP63xx or ISL65xx Multi-Phase Buck PWM
controller forms a complete single-stage core-voltage
regulator solution with high efficiency performance at high
switching frequency for advanced microprocessors.
• Adaptive Shoot-Through Protection
• 0.5Ω On-Resistance and 4A Sink Current Capability
• Supports High Switching Frequency up to 2MHz
- Fast Output Rise/Fall Time and Low Propagation Delay
• Three-State PWM Input for Power Stage Shutdown
• Internal Bootstrap Schottky Diode
The IC is biased by a single low voltage supply (5V) and
minimizes gate drive losses due to MOSFET gate charge at
high switching frequency applications. Each driver is capable
of driving a 3000pF load with a low propagation delay and
less than 10ns transition time. This product implements
bootstrapping on the upper gate with an internal bootstrap
Schottky diode, reducing implementation cost, complexity,
and allowing the use of higher performance, cost effective
N-Channel MOSFETs. Adaptive shoot-through protection is
integrated to prevent both MOSFETs from conducting
simultaneously.
• Low Bias Supply Current (5V, 80µA)
• Diode Emulation for Enhanced Light Load Efficiency and
Pre-Biased Startup Applications
• VCC POR (Power-On-Reset) Feature Integrated
• Low Three-State Shutdown Holdoff Time (Typically 160ns)
• Pin-to-Pin Compatible with ISL6605
• QFN Package:
- Compliant to JEDEC PUB95 MO-220
QFN - Quad Flat No Leads - Package Outline
- Near Chip Scale Package footprint, which improves
PCB efficiency and has a thinner profile
The ISL6608 features 4A sink current for the lower gate
driver, which is capable of holding the lower MOSFET gate
during the Phase node rising edge to prevent shoot-through
power loss caused by the high dv/dt of the Phase node.
• Pb-free Available as an Option
The ISL6608 also features a Three-State PWM input which,
working together with Intersil multi-phase PWM controllers,
will prevent a negative transient on the output voltage when
the output is shut down. This feature eliminates the Schottky
diode that is usually seen in a microprocessor power system
for protecting the microprocessor from reversed output
voltage events.
Applications
• Core Voltage Supplies for FPGAs and PowerPC
Microprocessors
• Point-Of-Load Modules with Pre-Biased Start-Up
Requirements
• High Frequency and High Current DC-DC Converters
A diode emulation feature is integrated in the ISL6608 to
enhance converter efficiency at light load conditions. Diode
emulation also prevents a negative transient when starting
up with a pre-biased voltage on the output. When diode
emulation is enabled, the driver allows discontinuous
conduction mode by detecting when the inductor current
reaches zero and subsequently turns off the low side
MOSFET, which prevents the output from sinking current
and producing a negative transient on a pre-biased output
(see Figures 6 and 7 on page 7).
Related Literature
• Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices”
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1
1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2004. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
ISL6608
Ordering Information
Ordering Information (Continued)
TEMP RANGE
PKG.
TEMP RANGE
PKG.
PART NUMBER
ISL6608CB
(°C)
PACKAGE
DWG. #
PART NUMBER
ISL6608IR-T
ISL6608IBZ (Note)
(°C)
PACKAGE
DWG. #
0 to 70
8 Ld SOIC
M8.15
L8.3x3
M8.15
8 Ld 3x3 QFN Tape and Reel
ISL6608CB-T
ISL6608CR
8 Ld SOIC Tape and Reel
-40 to 85
8 Ld SOIC
(Lead-Free)
M8.15
0 to 70
8 Ld 3x3 QFN
ISL6608IBZ-T (Note) 8 Ld SOIC Tape and Reel (Lead-Free)
ISL6608CR-T
ISL6608CBZ (Note)
8 Ld 3x3 QFN Tape and Reel
ISL6608IRZ (Note)
-40 to 85
8 Ld 3x3 QFN
(Lead-Free)
L8.3x3
0 to 70
8 Ld SOIC
(Lead-Free)
ISL6608IRZ-T (Note)
8 Ld 3x3 QFN Tape and Reel (Lead-Free)
ISL6608CBZ-T
8 Ld SOIC Tape and Reel (Lead-Free)
NOTE: Intersil Lead-Free products employ special lead-free
material sets; molding compounds/die attach materials and 100%
matte tin plate termination finish, which is compatible with both SnPb
and lead-free soldering operations. Intersil Lead-Free products are
MSL classified at lead-free peak reflow temperatures that meet or
exceed the lead-free requirements of IPC/JEDEC J Std-020B.
ISL6608CRZ (Note)
0 to 70
8 Ld 3x3 QFN
(Lead-Free)
L8.3x3
ISL6608CRZ-T
ISL6608IB
8 Ld 3x3 QFN Tape and Reel (Lead-Free)
-40 to 85
8 Ld SOIC
M8.15
ISL6608IB-T
ISL6608IR
8 Ld SOIC Tape and Reel
-40 to 85
8 Ld 3x3 QFN
L8.3x3
Pinouts
ISL6608CB (SOIC)
ISL6608CR (3X3 QFN)
TOP VIEW
TOP VIEW
UGATE
1
2
3
4
8
7
6
5
PHASE
FCCM
VCC
7
4
8
3
BOOT
PWM
GND
BOOT
PWM
1
2
FCCM
VCC
6
LGATE
5
2
ISL6608
Block Diagram
ISL6608
VCC
BOOT
FCCM
UGATE
PHASE
SHOOT-
THROUGH
PROTECTION
CONTROL
LOGIC
VCC
PWM
LGATE
GND
10K
THERMAL PAD (FOR QFN PACKAGE ONLY)
Typical Application - Multi-Phase Converter Using ISL6608 Gate Drivers
V
BAT
+5V
+5V
VCC
+V
CORE
BOOT
+5V
FB
COMP
UGATE
FCCM
PWM
VCC
VSEN
PHASE
DRIVE
PWM1
PWM2
ISL6608
PGOOD
LGATE
THERMAL
PAD
FCCM
MAIN
CONTROL
ISEN1
VID
V
BAT
ISEN2
+5V
VCC
BOOT
FS
DACOUT
GND
FCCM
PWM
UGATE
PHASE
DRIVE
ISL6608
LGATE
THERMAL
PAD
3
ISL6608
ti
Absolute Maximum Ratings
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 7V
Thermal Information
Thermal Resistance (Typical, Notes 2, 3, 4) θ (°C/W)
SOIC Package (Note 2) . . . . . . . . . . . .
QFN Package (Notes 3, 4). . . . . . . . . .
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150°C
Maximum Storage Temperature Range. . . . . . . . . . .-65°C to 150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300°C
(SOIC - Lead Tips Only)
θ
(°C/W)
n/a
16
JA
JC
BOOT Voltage (V
Phase Voltage (V
DE PWM
UGATE. . . . . . . . . . . . . . . . . . . . . . V
LGATE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to VCC + 0.3V
Ambient Temperature Range. . . . . . . . . . . . . . . . . . .-40°C to 125°C
). . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 22V
BOOT
110
82
) (Note 1). . . V
- 7V to V
+ 0.3V
PHASE
BOOT BOOT
Input Voltage (V , V
) . . . . . . . . . . . . . . . -0.3V to VCC + 0.3V
- 0.3V to V
BOOT
+ 0.3V
PHASE
Recommended Operating Conditions
Ambient Temperature Range. . . . . . . . . . . . . . . . . . . .-40°C to 85°C
Maximum Operating Junction Temperature. . . . . . . . . . . . . . 125°C
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V ±10%
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The Phase Voltage is capable of withstanding -7V when the BOOT pin is at GND.
2. θ is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
JA
3. θ is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See
JA
Tech Brief TB379.
4. For θ , the “case temp” location is the center of the exposed metal pad on the package underside.
JC
5. Guaranteed by design, not tested.
Electrical Specifications Recommended Operating Conditions, Unless Otherwise Noted
PARAMETER
VCC SUPPLY CURRENT
Bias Supply Current
POWER-ON RESET (POR)
VCC Rising
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
I
PWM Pin Floating, V
VCC
= 5V
-
80
-
µA
VCC
-
2.40
2.175
-
3.40
2.90
2.90
500
4.00
V
V
VCC Falling
T
= 0°C to 70°C
-
-
-
A
T
= -40°C to 85°C
V
A
Hysteresis
mV
BOOTSTRAP DIODE
Forward Voltage
PWM INPUT
V
V
= 5V, I = 2mA
F
0.40
0.52
0.62
V
F
VCC
Input Current
I
V
V
V
V
V
V
V
V
= 5V
= 0V
= 5V
-
250
-250
1.00
3.65
3.65
-
-
µA
µA
V
PWM
PWM
PWM
VCC
VCC
VCC
VCC
VCC
VCC
-
-
PWM Three-State Rising Threshold
PWM Three-State Falling Threshold
0.80
3.40
3.05
-
1.20
3.90
4.10
4.55
250
250
= 5V, T = 0°C to 70°C
V
A
= 5V, T = -40°C to 85°C
A
V
= 5.5V
V
Three-State Shutdown Holdoff Time
t
= 5V, T = 0°C to 70°C
100
80
160
160
ns
ns
TSSHD
A
= 5V, T = -40°C to 85°C
A
FORCED CONTINUOUS CONDUCTION MODE (FCCM) INPUT
FCCM LOW Threshold
0.50
-
-
-
-
V
V
V
FCCM HIGH Threshold
T
= 0°C to 70°C
-
-
2.00
2.05
A
T
= -40°C to 85°C
A
4
ISL6608
Electrical Specifications Recommended Operating Conditions, Unless Otherwise Noted (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
SWITCHING TIME
UGATE Rise Time
t
V
V
V
V
V
V
V
V
V
= 5V, 3nF Load
-
-
-
-
-
-
-
-
-
-
8.0
8.0
8.0
4.0
35
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
RU
VCC
VCC
VCC
VCC
VCC
VCC
VCC
VCC
VCC
LGATE Rise Time
t
= 5V, 3nF Load
RL
FU
UGATE Fall Time
t
= 5V, 3nF Load
LGATE Fall Time
t
= 5V, 3nF Load
FL
UGATE Turn-Off Propagation Delay
LGATE Turn-Off Propagation Delay
UGATE Turn-On Propagation Delay
LGATE Turn-On Propagation Delay
UG/LG Three-state Propagation Delay
Minimum LG On TIME in DCM (Note 5)
OUTPUT
t
= 5V, Outputs Unloaded
= 5V, Outputs Unloaded
= 5V, Outputs Unloaded
= 5V, Outputs Unloaded
= 5V, Outputs Unloaded
PDLU
t
35
PDLL
t
20
PDHU
t
20
PDHL
t
35
PTS
t
400
LGMIN
Upper Drive Source Resistance
Upper Driver Source Current (Note 5)
Upper Drive Sink Resistance
Upper Driver Sink Current (Note 5)
Lower Drive Source Resistance
Lower Driver Source Current (Note 5)
Lower Drive Sink Resistance
Lower Driver Sink Current (Note 5)
R
250mA Source Current
= 2.5V
-
-
-
-
-
-
-
-
1
2.5
-
Ω
A
Ω
A
Ω
A
Ω
A
U
U
I
V
2.00
1
U
UGATE-PHASE
250mA Sink Current
= 2.5V
R
2.5
-
I
V
2.00
1
U
UGATE-PHASE
250mA Source Current
= 2.5V
R
2.5
-
L
L
I
V
2.00
0.5
4.00
L
LGATE
250mA Sink Current
V = 2.5V
LGATE
R
1.0
-
I
L
VCC (Pin 6 for SOIC-8, Pin 5 for QFN)
Connect the VCC pin to a +5V bias supply. Place a high
quality bypass capacitor from this pin to GND.
Functional Pin Description
UGATE (Pin 1 for SOIC-8, Pin 8 for QFN)
The UGATE pin is the upper gate drive output. Connect to
the gate of high-side power N-Channel MOSFET.
FCCM (Pin 7 for SOIC-8, Pin 6 for QFN)
The FCCM pin enables or disables Diode Emulation. When
FCCM is LOW, diode emulation is allowed. Otherwise,
continuous conduction mode is forced (FCCM= Forced
Continuous Conduction Mode). See the Diode Emulation
section under DESCRIPTION for more detail.
BOOT (Pin 2 for SOIC-8, Pin 1 for QFN)
BOOT is the floating bootstrap supply pin for the upper gate
drive. Connect the bootstrap capacitor between this pin and
the PHASE pin. The bootstrap capacitor provides the charge
to turn on the upper MOSFET. See the Bootstrap Diode and
Capacitor section under DESCRIPTION for guidance in
choosing the appropriate capacitor value.
PHASE (Pin 8 for SOIC-8, Pin 7 for QFN)
Connect the PHASE pin to the source of the upper MOSFET
and the drain of the lower MOSFET. This pin provides a
return path for the upper gate driver.
PWM (Pin 3 for SOIC-8, Pin 2 for QFN)
The PWM signal is the control input for the driver. The PWM
signal can enter three distinct states during operation, see the
three-state PWM Input section under DESCRIPTION for further
details. Connect this pin to the PWM output of the controller.
Thermal Pad (in QFN only)
The PCB “thermal land” design for this exposed die pad
should include thermal vias that drop down and connect to
one or more buried copper plane(s). This combination of
vias for vertical heat escape and buried planes for heat
spreading allows the QFN to achieve its full thermal
potential. This pad should be grounded. Refer to TB389 for
design guidelines.
GND (Pin 4 for SOIC-8, Pin 3 for QFN)
GND is the ground pin for the IC.
LGATE (Pin 5 for SOIC-8, Pin 4 for QFN)
LGATE is the lower gate drive output. Connect to gate of the
low-side power N-Channel MOSFET.
5
ISL6608
propagation delay [t
] is encountered before the upper
Description
Theory of Operation
Designed for speed, the ISL6608 dual MOSFET driver controls
both high-side and low-side N-Channel FETs from one
externally provided PWM signal.
PDLU
gate begins to fall [t ]. The upper MOSFET gate-to-source
FU
voltage is monitored, and the lower gate is allowed to rise
after the upper MOSFET gate-to-source voltage drops below
1V. The lower gate then rises [t ], turning on the lower
MOSFET.
RL
A rising edge on PWM initiates the turn-off of the lower
MOSFET (see Figure 1, Timing Diagram). After a short
This driver is optimized for converters with large step down
compared to the upper MOSFET because the lower
MOSFET conducts for a much longer time in a switching
period. The lower gate driver is therefore sized much larger
to meet this application requirement.
propagation delay [t
], the lower gate begins to fall.
PDLL
Typical fall times [t ] are provided in the Electrical
FL
Specifications section. Adaptive shoot-through circuitry
monitors the LGATE voltage. When LGATE has fallen below
1V, UGATE is allowed to turn ON. This prevents both the
lower and upper MOSFETs from conducting simultaneously,
or shoot-through.
The 0.5Ω on-resistance and 4A sink current capability
enable the lower gate driver to absorb the current injected to
the lower gate through the drain-to-gate capacitor of the
lower MOSFET and prevent a shoot through caused by the
high dv/dt of the phase node.
A falling transition on PWM indicates the turn-off of the upper
MOSFET and the turn-on of the lower MOSFET. A short
2.5V
t
PWM
PDHU
t
t
PDLU
TSSHD
t
t
RU
RU
t
t
FU
FU
t
PTS
1V
UGATE
LGATE
t
PTS
1V
t
RL
t
FL
t
TSSHD
t
PDHL
t
t
PDLL
FL
FIGURE 1. TIMING DIAGRAM
6
ISL6608
Typical Performance Waveforms
FIGURE 2. LOAD TRANSIENT (0 to 30A, 3-PHASE)
FIGURE 3. LOAD TRANSIENT (30 to 0A, 3-PHASE)
FIGURE 4. DCM TO CCM TRANSITION AT NO LOAD
FIGURE 5. CCM TO DCM TRANSITION AT NO LOAD
INDUCTOR
CURRENT
INDUCTOR
CURRENT
VOUT
VOUT
FIGURE 6. PRE-BIASED STARTUP IN CCM MODE (FCCM = HI)
FIGURE 7. PRE-BIASED STARTUP IN DCM MODE (FCCM = LO)
7
ISL6608
Diode Emulation
Internal Bootstrap Diode
Diode emulation allows for higher converter efficiency under
light-load situations. With diode emulation active
(FCCM = LO), the ISL6608 will detect the zero current
crossing of the output inductor and turn off LGATE. This
ensures that discontinuous conduction mode (DCM) is
achieved. This prevents the low side MOSFET from sinking
current, and no negative spike at the output is generated
during pre-biased startup (See Figure 7 on page 7). The
LGATE has a minimum ON time of 400ns in DCM mode.
Diode emulation is asynchronous to the PWM signal.
Therefore, the ISL6608 responds to the FCCM input
immediately after it changes state. Refer to Figures 2 to 7 on
page 7 for details.
This driver features an internal bootstrap Schottky diode.
Simply adding an external capacitor across the BOOT and
PHASE pins completes the bootstrap circuit. The bootstrap
capacitor must have a maximum voltage rating above VCC +
5V and its capacitance value can be chosen from the
following equation:
Q
∆V
GATE
-----------------------
C
≥
BOOT
BOOT
Q
• VCC
G1
-------------------------------
Q
=
• N
Q1
GATE
V
GS1
where Q is the amount of gate charge per upper MOSFET
G1
Intersil does not recommend Diode Emulation used with the
at V
gate-source voltage and N is the number of
Q1
GS1
r
of the freewheeling MOSFET current sensing
DS(ON)
control MOSFETs. The ∆V
BOOT
allowable droop in the rail of the upper drive. The previous
relationship is illustrated in Figure 8.
term is defined as the
topology. The turn-OFF of the low side MOSFET forces the
forward current going through the body diode of the
MOSFET. If the current sampling circuit of the controller is
activated during the body diode conduction, a diode voltage
drop, instead of a much smaller MOSFET’s r
drop, is sampled. This will falsely trigger the over current
protection function of the controller.
As an example, suppose an upper MOSFET has a gate
voltage
charge, Q
, of 65nC at 5V and also assume the droop in
DS(ON)
GATE
the drive voltage over a PWM cycle is 200mV. One will find
that a bootstrap capacitance of at least 0.125µF is required.
The next larger standard value capacitance is 0.15µF. A
good quality ceramic capacitor is recommended.
The ISL6608 works with DCR, upper MOSFET, or power
resistor current sensing topologies to start up from pre-
biased load with no problem.
2.0
1.8
1.6
1.4
1.2
1.0
0.8
Three-State PWM Input
A unique feature of the ISL6608 and other Intersil drivers is
the addition of a shutdown window to the PWM input. If the
PWM signal enters and remains within the shutdown window
for a set holdoff time (typically 160ns), the output drivers are
disabled and both MOSFET gates are pulled and held low.
The shutdown state is removed when the PWM signal
moves outside the shutdown window. Otherwise, the PWM
rising and falling thresholds outlined in the ELECTRICAL
SPECIFICATIONS determine when the lower and upper
gates are enabled.
Q
= 100nC
GATE
0.6
0.4
0.2
0.0
Adaptive Shoot-Through Protection
Both drivers incorporate adaptive shoot-through protection
to prevent upper and lower MOSFETs from conducting
simultaneously and shorting the input supply. This is
accomplished by ensuring the falling gate has turned off one
MOSFET before the other is allowed to turn on.
20nC
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
∆V (V)
BOOT_CAP
FIGURE 8. BOOTSTRAP CAPACITANCE vs BOOT RIPPLE
VOLTAGE
During turn-off of the lower MOSFET, the LGATE voltage is
monitored until it reaches a 1V threshold, at which time the
UGATE is released to rise. Adaptive shoot-through circuitry
monitors the upper MOSFET gate-to-source voltage during
UGATE turn-off. Once the upper MOSFET gate-to-source
voltage has dropped below a threshold of 1V, the LGATE is
allowed to rise.
8
ISL6608
Power Dissipation
Layout Consideration
Package power dissipation is mainly a function of the
switching frequency and total gate charge of the selected
MOSFETs. Calculating the power dissipation in the driver for
a desired application is critical to ensuring safe operation.
Exceeding the maximum allowable power dissipation level
will push the IC beyond the maximum recommended
operating junction temperature of 125°C. The maximum
allowable IC power dissipation for the SO-8 package is
approximately 800mW. When designing the driver into an
application, it is recommended that the following calculation
be performed to ensure safe operation at the desired
frequency for the selected MOSFETs. The power dissipated
by the driver is approximated as below and plotted as in
Figure 9.
For heat spreading, place copper underneath the IC whether
it has an exposed pad or not. The copper area can be
extended beyond the bottom area of the IC and/or
connected to buried copper plane(s) with thermal vias. This
combination of vias for vertical heat escape, extended
copper plane, and buried planes for heat spreading allows
the IC to achieve its full thermal potential.
Place each channel power component as close to each
other as possible to reduce PCB copper losses and PCB
parasitics: shortest distance between DRAINs of upper FETs
and SOURCEs of lower FETs; shortest distance between
DRAINs of lower FETs and the power ground. Thus, smaller
amplitudes of positive and negative ringing are on the
switching edges of the PHASE node. However, some space
in between power components is required for good airflow.
The gate traces from the drivers to the FETs should be kept
short and wide to reduce the inductance of the traces and
promote clean drive signals.
P = f (1.5V Q + V Q ) + I V
DDQ
CC
sw
U
L
U
L
where f is the switching frequency of the PWM signal. V
sw
U
U
and V represent the upper and lower gate rail voltage. Q
L
and Q are the upper and lower gate charge determined by
L
MOSFET selection and any external capacitance added to
the gate pins. The I
V
product is the quiescent power
DDQ CC
of the driver and is typically negligible.
1000
Q =50nC
U
Q =100nC
U
Q =50nC
U
Q =100nC
Q =200nC
L
L
900
800
700
600
500
400
300
200
100
0
Q =50nC
L
Q =20nC
U
Q =50nC
L
0
200 400 600 800 1000 1200 1400 1600 1800 2000
FREQUENCY (kHz)
FIGURE 9. POWER DISSIPATION vs FREQUENCY
9
ISL6608
Quad Flat No-Lead Plas tic Package (QFN)
Micro Lead Frame Plas tic Package (MLFP)
L8.3x3
8 LEAD QUAD FLAT NO-LEAD PLASTIC PACKAGE
(COMPLIANT TO JEDEC MO-220VEEC ISSUE C)
MILLIMETERS
SYMBOL
MIN
0.80
NOMINAL
0.90
MAX
1.00
0.05
1.00
NOTES
A
A1
A2
A3
b
-
-
-
-
-
-
9
0.20 REF
0.28
9
0.23
0.25
0.25
0.38
1.25
1.25
5, 8
D
3.00 BSC
2.75 BSC
1.10
-
D1
D2
E
9
7, 8
3.00 BSC
2.75 BSC
1.10
-
E1
E2
e
9
7, 8
0.65 BSC
-
k
0.25
0.35
-
-
-
L
0.60
0.75
0.15
8
L1
N
-
8
2
2
-
10
2
Nd
Ne
P
3
3
-
-
0.60
12
9
θ
-
9
Rev. 1 10/02
NOTES:
1. Dimensioning and tolerancing conform to ASME Y14.5-1994.
2. N is the number of terminals.
3. Nd and Ne refer to the number of terminals on each D and E.
4. All dimensions are in millimeters. Angles are in degrees.
5. Dimension b applies to the metallized terminal and is measured
between 0.15mm and 0.30mm from the terminal tip.
6. The configuration of the pin #1 identifier is optional, but must be
located within the zone indicated. The pin #1 identifier may be
either a mold or mark feature.
7. Dimensions D2 and E2 are for the exposed pads which provide
improved electrical and thermal performance.
8. Nominal dimensionsare provided toassistwith PCBLandPattern
Design efforts, see Intersil Technical Brief TB389.
9. Features and dimensions A2, A3, D1, E1, P & θ are present when
Anvil singulation method is used and not present for saw
singulation.
10. Depending on the method of lead termination at the edge of the
package, a maximum 0.15mm pull back (L1) maybe present. L
minus L1 to be equal to or greater than 0.3mm.
10
ISL6608
Small Outline Plas tic Packages (SOIC)
M8.15 (JEDEC MS-012-AA ISSUE C)
8 LEAD NARROW BODY SMALL OUTLINE PLASTIC
PACKAGE
N
INDEX
0.25(0.010)
M
B M
H
AREA
E
INCHES
MILLIMETERS
-B-
SYMBOL
MIN
MAX
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
NOTES
A
A1
B
C
D
E
e
0.0532
0.0040
0.013
0.0688
0.0098
0.020
-
1
2
3
L
-
9
SEATING PLANE
A
0.0075
0.1890
0.1497
0.0098
0.1968
0.1574
-
-A-
o
h x 45
D
3
4
-C-
α
µ
0.050 BSC
1.27 BSC
-
e
A1
H
h
0.2284
0.0099
0.016
0.2440
0.0196
0.050
5.80
0.25
0.40
6.20
0.50
1.27
-
C
B
0.10(0.004)
5
0.25(0.010) M
C A M B S
L
6
N
α
8
8
7
NOTES:
o
o
o
o
0
8
0
8
-
1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of
Publication Number 95.
Rev. 0 12/93
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006
inch) per side.
4. Dimension “E” does not include interlead flash or protrusions. Inter-
lead flash and protrusions shall not exceed 0.25mm (0.010 inch) per
side.
5. The chamfer on the body is optional. If it is not present, a visual index
feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater
above the seating plane, shall not exceed a maximum value of
0.61mm (0.024 inch).
10. Controlling dimension: MILLIMETER. Converted inch dimensions
are not necessarily exact.
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
11
ISL6608IBZ-T 替代型号
| 型号 | 制造商 | 描述 | 替代类型 | 文档 |
| ISL6608IB-T | INTERSIL | Synchronous Rectified MOSFET Driver | 完全替代 |
|
| ISL6608CBZ-T | INTERSIL | Synchronous Rectified MOSFET Driver | 完全替代 |
|
ISL6608IBZ-T 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| ISL6608IR | INTERSIL | Synchronous Rectified MOSFET Driver | 获取价格 |
|
| ISL6608IR | RENESAS | 最小供电电压(V):4.5V;最大供电电压(V):5.5V;峰值输出灌电流(A):2A;峰值输出拉电流(A):2A;驱动配置:半桥;通道类型:同步;驱动器数:2;栅极类型:N 沟道 MOSFET;上升时间(ns):8ns;下降时间(ns):8ns;元器件封装:8-QFN; | 获取价格 |
|
| ISL6608IR-T | INTERSIL | Synchronous Rectified MOSFET Driver | 获取价格 |
|
| ISL6608IRZ | INTERSIL | Synchronous Rectified MOSFET Driver | 获取价格 |
|
| ISL6608IRZ | RENESAS | 最小供电电压(V):4.5V;最大供电电压(V):5.5V;峰值输出灌电流(A):2A;峰值输出拉电流(A):2A;驱动配置:半桥;通道类型:同步;驱动器数:2;栅极类型:N 沟道 MOSFET;上升时间(ns):8ns;下降时间(ns):8ns;元器件封装:8-QFN; | 获取价格 |
|
| ISL6608IRZ-T | INTERSIL | Synchronous Rectified MOSFET Driver | 获取价格 |
|
| ISL6608IRZ-T | RENESAS | 最小供电电压(V):4.5V;最大供电电压(V):5.5V;峰值输出灌电流(A):2A;峰值输出拉电流(A):2A;驱动配置:半桥;通道类型:同步;驱动器数:2;栅极类型:N 沟道 MOSFET;上升时间(ns):8ns;下降时间(ns):8ns;元器件封装:8-QFN; | 获取价格 |
|
| ISL6609 | INTERSIL | Synchronous Rectified MOSFET Driver | 获取价格 |
|
| ISL6609 | RENESAS | Synchronous Rectified MOSFET Driver | 获取价格 |
|
| ISL6609A | INTERSIL | Synchronous Rectified MOSFET Driver | 获取价格 |
|
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