首页 > 二极管 > 小信号开关二极管 > BAS116

BAS116

更新时间：2025-07-12 12:52:53

品牌：LGE

描述：Surface Mount Switching Diode

PDF下载

中文翻译

免费 PCB/SMT

概述
规格参数
数据手册

如果您发现信息不准确，欢迎纠错

BAS116 概述

Surface Mount Switching Diode 表面贴装开关二极管

BAS116 规格参数

Case Style：	SOT-23	IF（mA）：	200
Maximum recurrent peak reverse voltage：	75	TRR（nS)：	3000
Maximum instantaneous forward voltage：	1.25	@IF（uA）：	150
Maximum reverse current：	0.005	@VR：	75
class：	Diodes

BAS116 数据手册

通过下载BAS116数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

PDF下载

BAS116

Surface Mount Switching Diode

SOT-23

Features

Low leakage current applications.

Medium speed switching times.

Surface mount package ideally suited for automatic

Insertion.

Applications

Dimensions in inches and (millimeters)

High speed switching application.

Ordering Information

Type No.

Marking

Package Code

SOT-23

BAS116

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Characteristic

Symbol

V_RRM

V_RWM

V_R

Limits

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Reverse Voltage

RMS Reverse Voltage

V_R(RMS)

I_FM

Forward Continuous Current

Repetitive Peak Forward Current

215

500

I_FRM

Non-Repetitive Peak Forward Surge Current

@t=1.0μs

4.0

1.0

0.5

I_FSM

@t=1.0ms

@t=1.0s

Power Dissipation

P_d

250

℃/W

℃

Thermal Resistance Junction to Ambient Air

Operating Junction Temperature Range

Storage Temperature Range

R_θJA

T_j

500

150

T_STG

-65 to +150

℃

http://www.luguang.cn

mail:lge@luguang.cn

BAS116

Surface Mount Switching Diode

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Characteristic

Symbol

Min

Typ

MAX

UNIT Test Condition

Reverse Breakdown Voltage

V_(BR)R

I_R= 100μA

0.9

1.0

1.1

1.25

5.0

I_F=1mA

I_F=10mA

Forward Voltage

V_FM

I_F=50mA

I_F=150mA

Reverse Leakage Current

Junction Capacitance

I_R

C_j

t_rr

V_R=75V

V_R=0V,f=1.0MHz

I_F=I_R=10mAI_rr=0.1*I_R

Reverse Recovery Time

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

http://www.luguang.cn

mail:lge@luguang.cn

BAS116 相关器件

型号	制造商	描述	价格	文档
BAS116,215	ETC	DIODE GEN PURP 75V 215MA SOT23	获取价格
BAS116,215	NEXPERIA	工作温度:150°C（最大）;反向峰值电压（Vr）:75V;反向恢复时间（trr）:3µs;正向压降（Vf）:1.25V @ 150mA;最大反向电流(Ir):5nA @ 75V;最大工作结温（Tj）:150°C（最大）;元器件封装:TO-236AB;	获取价格
BAS116,235	ETC	DIODE GEN PURP 75V 215MA SOT23	获取价格
BAS116-13	DIODES	Rectifier Diode, 1 Element, 0.215A, 85V V(RRM), Silicon, PLASTIC PACKAGE-3	获取价格
BAS116-13-F	DIODES	SURFACE MOUNT LOW LEAKAGE DIODE	获取价格
BAS116-7-F	DIODES	SURFACE MOUNT LOW LEAKAGE DIODE	获取价格
BAS116-AU	PANJIT	SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES	获取价格
BAS116-AU_A0_00001	PANJIT	SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES	获取价格
BAS116-AU_A0_10001	PANJIT	SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES	获取价格
BAS116-AU_A1_00001	PANJIT	SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES	获取价格