概述
数据手册1N5402GP-BP 概述
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1N5402GP-BP 数据手册
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PDF下载M C C
1N5400
THRU
1N5408
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
21201 Itasca Street Chatsworth
ꢆꢋꢅꢌꢍꢎꢍꢍ
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ
Features
·
·
·
·
Low Current Leakage
3 Amp Rectifier
50 - 1000 Volts
Metalurgically Bonded Construction
Low Forward Voltage
High Current Capability
Maximum Ratings
DO-201AD
·
·
·
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Maximum Thermal Resistance; 30°C/W Junction To Lead
MCC
Catalog
Number
Device
Marking
Maximum
Recurrent
Peak
Reverse
Voltage
50V
100V
200V
400V
500V
600V
800V
1000V
Maximum Maximum
RMS
DC
Voltage
Blocking
Voltage
D
1N5400
1N5401
1N5402
1N5404
1N5405
1N5406
1N5407
1N5408
---
---
---
---
---
---
---
---
35V
70V
50V
100V
200V
400V
500V
600V
800V
1000V
A
Cathode
Mark
140V
280V
350V
420V
560V
700V
B
D
C
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
IF(AV)
3.0A
TA = 105°C
Peak Forward Surge
Current
IFSM
200A
8.3ms, half sine
DIMENSIONS
Maximum
INCHES
MIN
---
---
.048
1.000
MM
MIN
---
---
1.20
25.40
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
VF
IR
1.0V
IFM = 3.0A;
TJ = 25°C*
DIM
A
B
C
D
MAX
.370
.250
.052
---
MAX
9.50
6.40
1.30
---
NOTE
5.0mA
50mA
TJ = 25°C
TJ = 125°C
Typical Junction
Capacitance
CJ
40pF
Measured at
1.0MHz, VR=4.0V
*Pulse test: Pulse width 300 msec, Duty cycle 2%
www.mccsemi.com
1N5400 thru 1N5408
M C C
Figure 1
Typical Forward Characteristics
20
Figure 2
10
6
Forward Derating Curve
3.0
2.5
2
4
2
1
.6
.4
Amps
1.5
1.0
.5
Amps
.2
25°C
.1
.06
.04
Single Phase, Half Wave
60Hz Resistive or Inductive Load
0
50
75
100
125
150
175
0
°C
.02
.01
Average Forward Rectified Current - Amperesversus
Ambient Temperature -°C
.4
.6
1.4
.8
1.0
1.2
Volts
Instantaneous Forward Current - Amperesversus
Instantaneous Forward Voltage - Volts
Figure 3
Junction Capacitance
100
60
40
20
TJ=25°C
pF
10
6
4
2
1
400
1000
.1
.2
.4
1
2
10 20
200
4
40
100
Volts
Junction Capacitance - pFversus
Reverse Voltage - Volts
www.mccsemi.com
1N5400 thru 1N5408
M C C
Figure 4
Typical Reverse Characteristics
Figure 5
Peak Forward Surge Current
100
60
300
40
250
20
200
150
100
10
6
Amps
4
50
0
2
1
80
100
1
60
4
6
10 20
40
8
2
mAmps
.6
.4
Cycles
Peak Forward Surge Current - Amperesversus
Number Of Cycles At 60Hz - Cycles
.2
TA=25°C
.1
.06
.04
.02
.01
20
40
60
80
140
100
120
Volts
Instantaneous Reverse Leakage Current - MicroAmperesversus
Percent Of Rated Peak Reverse Voltage - Volts
www.mccsemi.com
1N5402GP-BP 相关器件
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| 1N5402GP-BP-HF | MCC | Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, | 获取价格 |
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| 1N5402GP-T | MCC | 暂无描述 | 获取价格 |
|
| 1N5402GR | SECOS | Low forward voltage drop | 获取价格 |
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| 1N5402GU | DYELEC | 3 .0 AMPS. Glass Passivated Rectifiers | 获取价格 |
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| 1N5402GU22 | RECTRON | Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, | 获取价格 |
|
| 1N5402GU27 | RECTRON | Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, | 获取价格 |
|
| 1N5402GV | RECTRON | GLASS PASSIVATED RECTIFIER | 获取价格 |
|
| 1N5402H36-1 | RECTRON | Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, | 获取价格 |
|
| 1N5402K | DIOTEC | Silicon Rectifiers | 获取价格 |
|
| 1N5402K | SEMIKRON | Standard silicon rectifier diodes | 获取价格 |
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