概述
数据手册MBR3050CT 概述
30 Amp Rectifier 30 to 60 Volts Schottky Barrier 30安培整流器30到60伏肖特基势垒
MBR3050CT 数据手册
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M C C
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
21201 Itasca Street Chatsworth
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MBR3060CT
30 Amp
Schottky Barrier
Rectifier
Features
·
·
·
·
Metal of silicon rectifier, majority carrier conducton
Guard ring for transient protection
Low power loss high efficiency
30 to 60 Volts
High surge capacity, High current capability
Maximum Ratings
TO-220AB
•
•
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +175°C
B
L
M
Maximum
Rcurrent
Maximum DC
Blocking
C
D
MCC
Maximum
A
Part Number Peak Reverse RMS Voltage
Voltage
K
Voltage
E
F
PIN
2
MBR3030CT
MBR3035CT
MBR3040CT
MBR3045CT
MBR3050CT
MBR3060CT
30V
35V
40V
45V
50V
60V
21V
24.5V
28V
31.5V
35V
30V
35V
40V
45V
50V
60V
1
3
G
I
J
42V
N
Electrical Characteristics @ 25°C Unless Otherwise Specified
H
H
Average Forward
Current
IF(AV)
30 A
TC =100°C
PIN 1
PIN 3
PIN 2
CASE
Peak Forward Surge
Current
IFSM
200A 8.3ms, half sine
Maximum
Instantaneous
Forward Voltage
MBR3030CT-3045CT
IFM = 30.0A;
TJ = 25°C
ꢀꢁꢂꢃꢄꢅꢁꢆꢄꢅ
ꢀ ꢀ ꢀ ꢀ
.84 V
.95 V
.72 V
.85 V
VF
INCHES
MM
ꢁꢂꢃ
A
B
C
D
E
F
G
H
ꢃꢂꢄ
.560
.380
.100
.230
.380
------
.500
.090
.020
.012
ꢃꢅꢆ
ꢃꢂꢄ
14.22
9.65
ꢃꢅꢆ
15.88
10.67
3.43
6.86
10.67
6.35
14.73
2.79
1.14
0.64
ꢄꢇꢈꢉ
MBR3050CT-3060CT
.625
.420
.135
TJ = 125°C
MBR3030CT-3045CT
MBR3050CT-3060CT
2.54
.270
.420
5.84
9.65
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
.250
.580
------
12.70
IR
0.2 mA TJ = 25°C
.110
2.29
I
J
K
.045
.025
0.51
0.30
.139
.161
3.53
4.09
Typical Junction
Capacitance
MBR3030CT-3045CT
MBR3050CT-3060CT
CJ
Measured at
1.0MHz, VR=4.0V
L
M
N
.140
.045
.080
.190
.055
.115
3.56
1.14
2.03
4.83
1.40
2.92
450pF
400pF
*Pulse Test: Pulse Width 300µsec, Duty Cycle 1%
www.mccsemi.com
RATING AND CHARACTERISTIC CURVES
MBR3030CT thru MBR3060CT
M C C
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
300
40
250
200
150
100
30
20
10
RESISTIVE OR
INDUCTIVE LOAD
50
0
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
0
25
20
NUMBER OF CYCLES AT 60Hz
50
75
100
125
150
175
1
2
5
10
50
100
CASE TEMPERATURE , C
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
10
100
MBR3030CT ~ MBR3045CT
TJ = 125 C
10
1.0
0.1
MBR3050CT ~ MBR3060CT
1.0
0.1
TJ = 25 C
0.01
TJ = 25 C
PULSE WIDTH 300us
2% Duty cycle
0.001
140
0
20
40
60
80
100
120
0.8
0.9
0.1 0.2
0.3
0.4
0.5
0.6
0.7
1.0
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)
FIG.5 - TYPICAL JUNCTION CAPACITANCE
10000
MBR3030CT ~ MBR3045CT
1000
MBR3050CT ~ MBR3060CT
TJ = 25 C, f= 1MHz
100
0.1
1
4
100
10
REVERSE VOLTAGE , VOLTS
www.mccsemi.com
MBR3050CT 相关器件
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| MBR3050FCTE3/TU | MICROSEMI | Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 50V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN | 获取价格 |
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| MBR3050LCT | RECTRON | Reverse Voltage Vr : 50 V;Forward Current Io : 30 A;Max Surge Current : 250 A;Forward Voltage Vf : 0.55 V;Reverse Current Ir : 500 uA;Recovery Time : N/A;Package / Case : TO-220AB;Mounting Style : Through Hole | 获取价格 |
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