概述
规格参数
数据手册03902KPF 概述
Silicon Controlled Rectifier 可控硅整流器
03902KPF 规格参数
| 生命周期： | Obsolete | 包装说明： | , |
| Reach Compliance Code： | compliant | 风险等级： | 5.84 |
| Base Number Matches： | 1 |
03902KPF 数据手册
通过下载03902KPF数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
SILICON CONTROLLED RECTIFIER / INVERTER
• dv / dt – 200 V / usec
• Blocking voltages up to 600V
• Primarily for forced commutated
applications
• 1000 Amperes surge current
• Low forward on-state voltage
DEVICES
LEVELS
03902GPF
03904GPF
03906GPF
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
03902GPF
03904GPF
03906GPF
03902GPF
03904GPF
03906GPF
03902GPF
03904GPF
03906GPF
200
400
600
200
400
Repetitive Forward Voltage
VDRM
V
Repetitive Reverse Voltage
VRRM
V
V
600
300 min
500 min
700 min
Reverse Transient Blocking Voltage
VRSM
Thermal Resistance, Junction to Case
Typical Thermal Resistance (greased)
0.35
0.20
°C/W
°C/W
RθJC
RθCS
inch
pounds
Mounting Torque
25 - 30
TO-208A (TO-65)
Weight
0.56
oz
°C
°C
Operating Junction Temperature Range
TJ
-65°C to 125°C
-65°C to 155°C
Storage Temperature Range
Tstg
NOTE:
To specify dv/dt other than 200V/usec., enter appropriate letter in place of “G”:
K 300V/μsec., H 500V/μsec
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
RMS On-State Current
IT(RMS)
63
A
TC = 105°C, RθJC = 0.35° C/W
Average On-State Current
TC = 105°C, RθJC = 0.35° C/W
Peak on-state Voltage
IT(AV)
40
A
VTM
IH
1.8
500
V
mA
A
I
TM = 120A
Holding Current
Peak One Cycle Surge Current
TC = 105°C, 60Hz
ITSM
1000
I2t capability for Fusing
t = 8.3ms
I2t
4150
A2S
T4-LDS-0166 Rev. 1 (100696)
Page 1 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
TRIGGERING CHARACTERISTICS (TJ = +25°C, tp = 10us unless otherwise noted)
Parameters / Test Conditions
Gate voltage to Trigger
Typical gate voltage to Trigger
Nontriggering gate voltage
Gate current to Trigger
Typical gate current to Trigger
Peak gate power
Symbol
VGT
Min.
Typ.
Max.
Unit
V
3.0
VGT
1.0
V
Tj = +125°C
VGD
IGT
0.15
150
V
mA
mA
W
W
A
IGT
48
PGM
10
Average gate power
PG(AV)
IGM
2.0
Peak gate current
3.0
20
10
Peak gate voltage (forward)
Peak gate voltage (reverse)
VGM
VGM
V
V
BLOCKING
Parameters / Test Conditions
Leakage Current
Symbol
IDRM
Min.
Typ.
Max.
12
Unit
mA
Tj = +125°C @ VDRM
Tj = +125°C @ VRRM
Tj = +125°C
Reverse Leakage
IRRM
12
mA
Critical rate of rise of off-state voltage
dv/dt
200
V/μs
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
di/dt
td
Min.
Typ.
Max.
Unit
A/µs
µs
Critical rate of rinse of on-state current
(note 1)
Tj = +125°C
400
Typical delay time (note 1)
2.0
tq(P)
tq(U)
15
20
Maximum circuit commuted turn-off time (note 2)
µs
NOTE:
1.
2. ITM = 50A, di/dt = -5A/μsec., VR during turn-off interval = 50V min., reapplied dv/dt = 20V/μsec., linear to rated VDRM
GT = 0V.
ITM = 50A, VD = VDR. VGT = 12V open circuit, 20 ohm-0.1 usec. rise time.
,
V
3. To specify tq other than P = 15 μsec., enter appropriate letter in place of ”P”, U = 20 μsec.
T4-LDS-0166 Rev. 1 (100696)
Page 2 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
GRAPHS
FIGURE 1
FIGURE 3
TYPICAL FORWARD ON-STATE
CHARACTERISTICS
MAXIMUM POWER DISSIPATION
FIGURE 4
TRANSIENT THERMAL IMPEDANCE
FIGURE 2
FIGURE 5
FORWARD CURRENT DERATING
MAXIMUM NONREPETITIVE SURGE CURRENT
T4-LDS-0166 Rev. 1 (100696)
Page 3 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PACKAGE DIMENSIONS
NOTES:
Dimensions
1
2
¼ - 28 UNF – 3A
Full thread within 2 ½ threads
Ltr
Inches
Min Max
Millimeters
Min Max
Notes
1
A
B
C
D
E
.677
.685 17.20 17.40
.770 19.56
1.200 1.250 30.48 31.75
.427
.115
.447 10.84 11.35
F
.155
.515
.249
.300
2.92
3.94
13.08
6.32
G
H
J
2
.200
.120
5.08
3.05
7.62
K
M
N
P
R
S
.667
.085
.155
.065
.030
16.94
2.15
3.93
1.65
.76
Dia.
.065
.145
.055
.025
1.65
3.68
1.40
.64
Dia.
Dia.
Physical dimensions TO-208AC(TO-65)
T4-LDS-0166 Rev. 1 (100696)
Page 4 of 4
03902KPF 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 03902KRF | MICROSEMI | Silicon Controlled Rectifier, 63A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-208AC, TO-65, 2 PIN | 获取价格 |
|
| 03902KRFE3 | MICROSEMI | Silicon Controlled Rectifier, 63A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-208AC, TO-65, 2 PIN | 获取价格 |
|
| 03902KUF | MICROSEMI | Silicon Controlled Rectifier | 获取价格 |
|
| 03904GPF | ETC | Silicon Controlled Rectifier | 获取价格 |
|
| 03904GPFE3 | MICROSEMI | Silicon Controlled Rectifier, 63A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-208AC, TO-65, 2 PIN | 获取价格 |
|
| 03904GRF | MICROSEMI | Silicon Controlled Rectifier/Inverter | 获取价格 |
|
| 03904GRFE3 | MICROSEMI | Silicon Controlled Rectifier, 63A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-208AC, TO-65, 2 PIN | 获取价格 |
|
| 03904GUF | ETC | Silicon Controlled Rectifier | 获取价格 |
|
| 03904GUFE3 | MICROSEMI | Silicon Controlled Rectifier, 62.8A I(T)RMS, 400V V(RRM), 1 Element, TO-65 | 获取价格 |
|
| 03904HPF | MICROSEMI | Silicon Controlled Rectifier, 63000mA I(T), 400V V(DRM) | 获取价格 |
|
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