1N827A-1
更新时间：2025-05-11 03:15:32
品牌：MICROSEMI
描述：6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated
概述
规格参数
数据手册1N827A-1 概述
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated 6.2与6.55伏温度补偿6.2和6.55伏温度补偿 齐纳二极管
1N827A-1 规格参数
| 是否无铅： | 含铅 | 是否Rohs认证： | 不符合 |
| 生命周期： | Active | 零件包装代码： | DO-35 |
| 包装说明： | O-LALF-W2 | 针数： | 2 |
| Reach Compliance Code： | not_compliant | ECCN代码： | EAR99 |
| HTS代码： | 8541.10.00.50 | 风险等级： | 5.64 |
| Is Samacsys： | N | 外壳连接： | ISOLATED |
| 配置： | SINGLE | 二极管元件材料： | SILICON |
| 二极管类型： | ZENER DIODE | JEDEC-95代码： | DO-204AH |
| JESD-30 代码： | O-LALF-W2 | JESD-609代码： | e0 |
| 湿度敏感等级： | 1 | 元件数量： | 1 |
| 端子数量： | 2 | 最高工作温度： | 175 °C |
| 最低工作温度： | -55 °C | 封装主体材料： | GLASS |
| 封装形状： | ROUND | 封装形式： | LONG FORM |
| 峰值回流温度（摄氏度）： | NOT SPECIFIED | 最大功率耗散： | 0.5 W |
| 标称参考电压： | 6.2 V | 表面贴装： | NO |
| 技术： | ZENER | 端子面层： | Tin/Lead (Sn/Pb) |
| 端子形式： | WIRE | 端子位置： | AXIAL |
| 处于峰值回流温度下的最长时间： | NOT SPECIFIED | 电压温度Coeff-Max： | 0.062 mV/°C |
| 最大电压容差： | 5% | Base Number Matches： | 1 |
1N827A-1 数据手册
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PDF下载1N821 thru 1N829A-1 DO-7
6.2 & 6.55 Volt Temperature Compensated
Zener Reference Diodes
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
The popular 1N821 thru 1N829 series of Zero-TC Reference Diodes
provides a selection of both 6.2 V and 6.55 V nominal voltages and
temperature coefficients to as low as 0.0005%/oC for minimal voltage
change with temperature when operated at 7.5 mA. These glass axial-
leaded DO-7 reference diodes are also available in JAN, JANTX, JANTXV,
and JANS military qualifications. Microsemi also offers numerous other
Zener Reference Diode products for a variety of other voltages up to 200 V.
DO-7
(DO-204AA)
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
•
•
•
•
JEDEC registered 1N821 thru 1N829 series
Internal metallurgical bonds
Double anode option with 1N822 and 1N824 selection
•
•
•
•
Provides minimal voltage changes over a broad
temperature range
For instrumentation and other circuit designs
requiring a stable voltage reference
Reference voltage selection of 6.2 V & 6.55 V +/-5%
Maximum temperature coefficient selections
with further tight tolerance options at nominal of 6.35 V
available from 0.01%/ºC to 0.0005%/ºC
•
1N821, 823, 825, 827 and 829 also have military
qualification to MIL-PRF-19500/159 up to the JANS
level by adding JAN, JANTX, JANTXV, or JANS
prefixes to part numbers as well as the “-1” suffix, e.g.
JANTX1N829-1, etc.
Radiation Hardened devices available by changing
“1N” prefix to “RH”, e.g. RH827, RH 829, RH829A,
etc. Also consult factory for “RH” data sheet brochure
Military surface mount equivalents also available in
DO-213AA with UR-1 suffix and JAN, JANTX, or
JANTXV prefix, e.g. JANTX1N829UR-1 (see separate
data sheet)
Tight voltage tolerances with nominal reference
voltages of 6.35 V available by adding tolerance
1%, 2%, 3%, etc. after the part number for
identification e.g. 1N827-2%, 1N829A -1%, 1N829-
1-1%, etc.
•
•
•
•
Flexible axial-lead mounting terminals
Nonsensitive to ESD per MIL-STD-750 Method
1020
•
Also available in smaller axial-leaded DO-35 package
(see separate data sheet)
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
•
•
Operating & StorageTemperature: -65oC to +175oC
•
•
•
•
CASE: Hermetically sealed glass case with DO-7
DC Power Dissipation: 500 mW @ TL = 25oC and
maximum current IZM of 70 mA. NOTE: For optimum
voltage-temperature stability, IZ = 7.5 mA (less than 50
mW in dissipated power)
(DO-204AA) package
TERMINALS: Tin-lead plated and solderable per
MIL-STD-750, Method 2026
MARKING: Part number and cathode band (except
•
Solder temperatures: 260 oC for 10 s (maximum)
double anode 1N822 and 1N824)
POLARITY: Reference diode to be operated with
the banded end positive with respect to the
opposite end
•
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
•
•
WEIGHT: 0.2 grams.
See package dimensions on last page
Copyright 2003
Microsemi
Page 1
10-27-2003 REV C
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N821 thru 1N829A-1 DO-7
6.2 & 6.55 Volt Temperature Compensated
Zener Reference Diodes
S C O T T S D A L E D I V I S I O N
*ELECTRICAL CHARACTERISTICS @ 25oC, unless otherwise specified
VOLTAGE
MAXIMUM
EFFECTIVE
TEMPERATURE
COEFFICIENT
TEMPERATURE
STABILITY
ZENER
VOLTAGE
(Note 1 and 4)
VZ @ IZT
ZENER
TEST
MAXIMUM
REVERSE
CURRENT
IR @ 3 V
ZENER
IMPEDANCE
(Note 2)
JEDEC
CURRENT
IZT
(∆VZT MAX)
TYPE NUMBER
(Note 1, 5 & 6)
-55oC to +100oC
(Note 3 and 4)
α
VZ
ZZT @ IZT
VOLTS
5.9 – 6.5
5.9 – 6.5
5.9 – 6.5
5.9 – 6.5
5.9 – 6.5
5.9 – 6.5
5.9 – 6.5
5.9 – 6.5
6.2 – 6.9
5.9 – 6.5
5.9 – 6.5
6.2 – 6.9
5.9 – 6.5
5.9 – 6.5
mA
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
OHMS
15
µA
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
mV
96
96
96
48
48
48
19
19
20
9
%/oC
0.01
1N821
1N821A
1N822†
1N823
10
0.01
15
0.01
15
0.005
0.005
0.005
0.002
0.002
0.002
0.001
0.001
0.001
0.0005
0.0005
1N823A
1N824†
1N825
10
15
15
1N825A
1N826
10
15
1N827
15
1N827A
1N828
10
9
15
10
5
1N829
15
1N829A
10
5
*JEDEC Registered Data.
†Double Anode; electrical specifications apply under both bias polarities.
NOTES:
1. Add a “-1” suffix for internal metallurgical bond. When ordering devices with tighter tolerances than specified for the VZ voltage nominal of
6.35 V, add a hyphened suffix to the part number for desired tolerance, e.g. 1N827-1-2%, 1N829-1-1%, 1N829A-1%, 1N829A-1-1%, etc.
2. Zener impedance measured by superimposing 0.75 mA ac rms on 7.5 mA dc @ 25oC.
3. The maximum allowable change observed over the entire temperature range i.e., the diode voltage will not exceed the specified mV
change at discrete temperature between the established limits.
4. Voltage measurements to be performed 15 seconds after application of dc current.
5. 1N821, 1N823, 1N825, 1N827, and 1N829 also have qualification to MIL-PRF-19500/159 by adding the JAN, JANTX, JANTXV, or
JANS prefix to part numbers as well as the “-1” suffix; e.g. JANTX1N827-1, JANTXV1N829-1, etc.
6. Designate Radiation Hardened devices with “RH” prefix instead of “1N”, e.g. RH829A instead of 1N829A.
GRAPHS
The curve shown in Figure 1 is typical of the diode series and
greatly simplifies the estimation of the Temperature Coefficient
(TC) when the diode is operated at currents other than 7.5mA.
EXAMPLE: A diode in this series is operated at a current of
7.5mA and has specified Temperature Coefficient (TC) limits of
+/-0.005%/oC. To obtain the typical Temperature Coefficient
limits for this same diode operated at a current of 6.0mA, the
new TC limits (%/oC) can be estimated using the graph in
FIGURE 1.
At a test current of 6.0mA the change in Temperature Coefficient
(TC) is approximately –0.0006%.oC. The algebraic sum of +/-
0.005%oC and –0.0006%/oC gives the estimated limits of
+0.0044%/oC and -0.0056%/oC.
FIGURE 1
TYPICAL CHANGE OF TEMPERATURE COEFFICIENT
WITH CHANGE IN OPERATING CURRENT.
Copyright 2003
Microsemi
Page 2
10-27-2003 REV C
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N821 thru 1N829A-1 DO-7
6.2 & 6.55 Volt Temperature Compensated
Zener Reference Diodes
S C O T T S D A L E D I V I S I O N
This curve in Figure 2 illustrates the change of
diode voltage arising from the effect of
impedance. It is in effect an exploded view of
the zener operating region of the I-V
characteristic.
In conjunction with Figure 1, this curve can be
used to estimate total voltage regulation under
conditions of both varying temperature and
current.
I – OpFerIaGtinUgRCEurr2ent (mA)
Z
TYPICAL CHANGE OF ZENER VOLTAGE WITH
CHANGE IN OPERATING CURRENT
DIMENSIONS
All dimensions in INCH
mm
Copyright 2003
Microsemi
Page 3
10-27-2003 REV C
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N827A-1 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 1N827A-1-1 | MICROSEMI | 6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated | 获取价格 |
|
| 1N827A-1-1% | MICROSEMI | Zener Diode | 获取价格 |
|
| 1N827A-1-1%E3 | MICROSEMI | Zener Diode | 获取价格 |
|
| 1N827A-1-2 | MICROSEMI | 6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated | 获取价格 |
|
| 1N827A-1-2% | MICROSEMI | Zener Diode | 获取价格 |
|
| 1N827A-1-3% | MICROSEMI | Zener Diode | 获取价格 |
|
| 1N827A-1-3%E3 | MICROSEMI | Zener Diode | 获取价格 |
|
| 1N827A-1E3TR | MICROSEMI | Zener Diode, 6.2V V(Z), 4.84%, 0.5W, Silicon, DO-204AA, HERMETIC SEALED, GLASS, DO-7, 2 PIN | 获取价格 |
|
| 1N827A-1TR | MICROSEMI | Zener Diode, 6.2V V(Z), 4.84%, 0.5W, Silicon, DO-204AA, HERMETIC SEALED, GLASS, DO-7, 2 PIN | 获取价格 |
|
| 1N827A-2 | MICROSEMI | 6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated | 获取价格 |
|
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