CR05AS-8AB
更新时间：2025-01-11 14:16:08
品牌：MITSUBISHI
描述：Silicon Controlled Rectifier, 1 Element, SOT-89, 3 PIN
概述
规格参数
数据手册CR05AS-8AB 概述
Silicon Controlled Rectifier, 1 Element, SOT-89, 3 PIN 可控硅整流器
CR05AS-8AB 规格参数
| 生命周期： | Obsolete | 零件包装代码： | SOT-89 |
| 包装说明： | SMALL OUTLINE, R-PSSO-F3 | 针数： | 3 |
| Reach Compliance Code： | unknown | ECCN代码： | EAR99 |
| HTS代码： | 8541.30.00.80 | 风险等级： | 5.67 |
| 外壳连接： | MAIN TERMINAL 2 | 配置： | SINGLE |
| JESD-30 代码： | R-PSSO-F3 | 元件数量： | 1 |
| 端子数量： | 3 | 最高工作温度： | 125 °C |
| 最低工作温度： | -40 °C | 封装主体材料： | PLASTIC/EPOXY |
| 封装形状： | RECTANGULAR | 封装形式： | SMALL OUTLINE |
| 认证状态： | Not Qualified | 表面贴装： | YES |
| 端子形式： | FLAT | 端子位置： | SINGLE |
| 触发设备类型： | SCR | Base Number Matches： | 1 |
CR05AS-8AB 数据手册
通过下载CR05AS-8AB数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载MITSUBISHI SEMICONDUCTOR THYRISTOR
CR05AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
CR05AS
Dimensions
OUTLINE DRAWING
in mm
4.4±0.1
1.5±0.1
1.6±0.2
1
2
3
0.5±0.07
0.4±0.07
+0.03
–0.05
0.4
1.5±0.11.5±0.1
(Back side)
2
T
T
1
2
TERMINAL
TERMINAL
1
2
3
3
1
GATE TERMINAL
• IT (AV) ........................................................................0.5A
• VDRM ..............................................................200V/400V
• IGT .........................................................................100µA
SOT-89
APPLICATION
Solid state relay, strobe flasher, ignitor, hybrid IC
MAXIMUM RATINGS
Voltage class
Symbol
Parameter
Unit
4 (marked “CB”)
8 (marked “CD”)
VRRM
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
200
300
160
200
160
400
500
320
400
320
V
V
V
V
V
VRSM
VR (DC)
VDRM
✽1
✽1
Repetitive peak off-state voltage
DC off-state voltage
VD (DC)
Symbol
Parameter
RMS on-state current
Average on-state current
Surge on-state current
Conditions
Ratings
Unit
A
IT (RMS)
IT (AV)
ITSM
0.79
0.5
10
✽2
Commercial frequency, sine half wave, 180° conduction, Ta=57°C
A
60Hz sine half wave 1 full cycle, peak value, non-repetitive
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
2
2
2
I t
I t for fusing
0.4
A s
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
0.1
0.01
6
W
W
V
6
V
0.1
A
–40 ~ +125
–40 ~ +125
48
°C
°C
mg
Tstg
Storage temperature
—
Weight
Typical value
✽1. With Gate-to-cathode resistance RGK=1kΩ
Feb.1999
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR05AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Limits
Symbol
Parameter
Test conditions
Unit
Min.
—
—
—
—
0.2
1
Typ.
—
Max.
0.1
0.1
1.9
0.8
—
mA
mA
V
IRRM
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Tj=125°C, VRRM applied
IDRM
VTM
VGT
VGD
IGT
Tj=125°C, VDRM applied, RGK=1kΩ
Ta=25°C, ITM=1.5A, instantaneous value
—
—
✽4
—
V
Gate trigger voltage
Ta=25°C, VD=6V, IT=0.1A
—
Gate non-trigger voltage
Gate trigger current
Tj=125°C, VD=1/2VDRM, RGK=1kΩ
V
✽3
✽4
—
100
3
µA
mA
°C/W
Tj=25°C, VD=6V, IT=0.1A
—
—
—
IH
Holding current
Tj=25°C, VD=12V, RGK=1kΩ
✽2
—
70
Rth (j-a)
Thermal resistance
Junction to ambient
✽2. Soldering with ceramic plate (25mm × 25mm × t0.7).
✽3. If special values of IGT are required, choose at least two items from those listed in the table below. (Example: AB, BC)
Item
A
B
C
IGT (µA)
1 ~ 30
20 ~ 50
40 ~ 100
The above values do not include the current flowing through the 1kΩ resistance between the gate and cathode.
✽4. IGT, VGT measurement circuit.
60Ω
A1
I
GS
IGT
TUT
A3
A2
6V
DC
3V
DC
V1
V
R
GK
1
2
GT
1kΩ
SWITCH
SWITCH 1 : IGT measurement
SWITCH 2 : VGT measurement
(Inner resistance of voltage meter is about 1kΩ)
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
RATED SURGE ON-STATE CURRENT
102
10
9
8
7
6
5
4
3
2
1
0
7
Ta = 25°C
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
0
1
2
3
4
5
100
2
3 4 5 7 101
2
3 4 5 7 102
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR05AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
103
GATE CHARACTERISTICS
102
7
7
5
TYPICAL EXAMPLE
5
3
2
3
2
V
FGM = 6V
PGM = 0.1W
101
7
102
7
5
3
2
5
3
2
P
G(AV) = 0.01W
V
GT = 0.8V
100
7
I
GT = 100µA
5
3
2
(T
j = 25°C)
101
7
5
3
2
10–1
7
5
V
GD = 0.2V
IFGM = 0.1A
3
2
100
–60 –40–20
10–2
10–22 3 5710–12 3 571002 3 571012 3 57102
GATE CURRENT (mA)
0
20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
GATE CURRENT VS.
JUNCTION TEMPERATURE
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
200
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
TYPICAL EXAMPLE
GT (25°C)
180
160
140
120
100
80
I
DISTRIBUTION
# 1 32µA
# 2 9µA
# 1
# 2
TYPICAL EXAMPLE
60
40
See
3
20
0
–40–20 0 20 40 60 80 100120140160
–40–20 0 20 40 60 80 100120140160
JUNCTION TEMPERATURE (°C)
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
103
1.5
7
25 25 t0.7
ALUMINUM BOARD
WITH SOLDERING
5
3
2
θ = 30° 60° 90°120°
180°
1.0
0.5
102
7
5
3
2
101
7
5
θ
3
2
360°
RESISTIVE, INDUCTIVE LOADS
0
100
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100
TIME (s)
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
AVERAGE ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR05AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE)
160
25 25 t0.7
ALUMINUM BOARD
WITH SOLDERING
1.5
90°
140
120
100
80
θ = 30° 60° 120°
θ
360°
180°
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
1.0
60
0.5
θ = 30°
90°
180°
40
θ
θ
60° 120°
360°
20
RESISTIVE LOADS
0
0
0
0.2
0.4
0.6
0.8
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
MAXIMUM AVERAGE POWER DISSIPATION
(RECTANGULAR WAVE)
160
90° 180°
25 25 t0.7
ALUMINUM BOARD
WITH SOLDERING
1.5
θ = 30° 60° 120° 270°
140
120
100
80
θ
θ
DC
360°
RESISTIVE
LOADS
NATURAL
CONVECTION
1.0
60
θ
0.5
360°
40
60°
120°
RESISTIVE,
INDUCTIVE
θ = 30°
90°
180°
20
LOADS
0
0
0
0.2
0.4
0.6
0.8
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
160
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
160
140
120
100
80
±
25 25 t0.7
TYPICAL EXAMPLE
ALUMINUM BOARD
WITH SOLDERING
NATURAL
140
120
100
80
θ
360°
CONVECTION
RESISTIVE,
INDUCTIVE
LOADS
RGK = 1kΩ
60
60
DC
40
40
θ = 30° 60°
120°
270°
20
20
90° 180°
0.4
0
0
0
0.2
0.6
0.8
–40–20 0 20 40 60 80 100120140160
AVERAGE ON-STATE CURRENT (A)
JUNCTION TEMPERATURE (°C)
Feb.1999
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR05AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BREAKOVER VOLTAGE VS.
GATE TO CATHODE RESISTANCE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
120
120
100
80
60
40
20
0
TYPICAL EXAMPLE
Tj = 125°C
100
80
60
40
20
0
# 2
# 1
TYPICAL EXAMPLE
# 1 IGT (25°C)= 10µA
# 2 IGT (25°C)= 66µA
Tj = 125°C, RGK = 1kΩ
10–1 2 3 5 7100 2 3 5 7101 2 3 5 7102
100 2 3 5 7101 2 3 5 7 102 2 3 5 7 103
GATE TO CATHODE RESISTANCE (kΩ)
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
HOLDING CURRENT VS.
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
GATE TO CATHODE RESISTANCE
102
7
5
500
TYPICAL EXAMPLE
T
j
= 25°C
IGT (25°C) I
H
(1kΩ)
# 1 13µA
# 2 59µA
1.6mA
1.8mA
I
I
H
(25°C) = 1mA
3
2
400
300
200
GT (25°C) = 25µA
# 1
101
7
DISTRIBUTION
TYPICAL
EXAMPLE
5
# 2
3
2
100
7
5
100
0
3
2
T
j
= 25°C
10–1
10–1 2 3 5 7100 2 3 5 7101 2 3 5 7102
–60–40–20 0 20 40 60 80 100120140
JUNCTION TEMPERATURE (°C)
GATE TO CATHODE RESISTANCE (kΩ)
REPETITIVE PEAK REVERSE VOLTAGE VS.
JUNCTION TEMPERATURE
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
103
160
TYPICAL EXAMPLE
TYPICAL EXAMPLE
7
5
4
3
2
# 1
# 2
IGT (25°C)
140
120
100
80
# 1 10µA
# 2 66µA
102
7
5
4
60
40
3
2
20
T
j
= 25°C
3 4 5 7 101
0
101
100
2
102
2 3 4 5 7
–40–20 0 20 40 60 80 100120140160
JUNCTION TEMPERATURE (°C)
GATE CURRENT PULSE WIDTH (µs)
Feb.1999
CR05AS-8AB 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| CR05AS-8B | RENESAS | SILICON CONTROLLED RECTIFIER,400V V(DRM),500MA I(T),SOT-89 | 获取价格 |
|
| CR05AS-8C | RENESAS | SILICON CONTROLLED RECTIFIER,400V V(DRM),500MA I(T),SOT-89 | 获取价格 |
|
| CR05AS-8_05 | RENESAS | Thyristor Low Power Use | 获取价格 |
|
| CR05AS-8_10 | RENESAS | Thyristor Low Power Use | 获取价格 |
|
| CR05AS4A | MITSUBISHI | Silicon Controlled Rectifier, 500mA I(T), 200V V(DRM) | 获取价格 |
|
| CR05AS4B | MITSUBISHI | Silicon Controlled Rectifier, 500mA I(T), 200V V(DRM) | 获取价格 |
|
| CR05AS4C | MITSUBISHI | Silicon Controlled Rectifier, 500mA I(T), 200V V(DRM) | 获取价格 |
|
| CR05AS8B | MITSUBISHI | Silicon Controlled Rectifier, 500mA I(T), 400V V(DRM) | 获取价格 |
|
| CR05BM-12A | RENESAS | 600V - 0.5A - Thyristor Low Power Use | 获取价格 |
|
| CR05BM-12A#BD0 | RENESAS | 600V - 0.5A - Thyristor Low Power Use | 获取价格 |
|
CR05AS-8AB 相关文章
中国台湾取消对台积电海外生产2nm芯片限制
- 2025-01-14
- 4
英伟达AI芯片机架过热问题引发关注，微软等客户削减订单
- 2025-01-14
- 3
Arm拟大幅提高芯片设计授权费用300%，并考虑自主开发芯片
- 2025-01-14
- 5
Rapidus计划6月向博通交付2nm芯片，日本半导体产业迈出新步伐
- 2025-01-14
- 4
