概述
数据手册BZB84-C10 概述
Dual Zener diodes 双齐纳二极管
BZB84-C10 数据手册
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PDF下载BZB84 series
Dual Zener diodes
Rev. 03 — 9 June 2009
Product data sheet
1. Product profile
1.1 General description
General-purpose Zener diodes in a SOT23 (TO-236AB) small Surface-Mounted
Device (SMD) plastic package.
1.2 Features
I Non-repetitive peak reverse power
I Small plastic package suitable for
surface-mounted design
dissipation: ≤ 40 W
I Total power dissipation: ≤ 300 mW
I Dual common anode configuration
I AEC-Q101 qualified
I Two tolerance series:
B = ±2 % and C = ±5 %
I Wide working voltage range:
nominal 2.4 V to 75 V (E24 range)
1.3 Applications
I General regulation functions
1.4 Quick reference data
Table 1.
Quick reference data
Symbol Parameter
Per diode
Conditions
Min
Typ
Max
Unit
[1]
[2]
VF
forward voltage
IF = 10 mA
-
-
-
-
0.9
40
V
PZSM
non-repetitive peak reverse
power dissipation
W
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
[2] tp = 100 µs; square wave; Tj = 25 °C prior to surge
BZB84 series
NXP Semiconductors
Dual Zener diodes
2. Pinning information
Table 2.
Pinning
Pin
1
Description
Simplified outline
Graphic symbol
cathode (diode 1)
cathode (diode 2)
common anode
3
3
2
3
1
2
1
2
006aaa154
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
-
Description
plastic surface-mounted package; 3 leads
Version
SOT23
BZB84-B2V4 to
BZB84-C75[1]
[1] The series consists of 74 types with nominal working voltages from 2.4 V to 75 V.
4. Marking
Table 4.
Marking codes
Type number
BZB84-B2V4
BZB84-B2V7
BZB84-B3V0
BZB84-B3V3
BZB84-B3V6
BZB84-B3V9
BZB84-B4V3
BZB84-B4V7
BZB84-B5V1
BZB84-B5V6
BZB84-B6V2
BZB84-B6V8
BZB84-B7V5
BZB84-B8V2
BZB84-B9V1
Marking code[1]
Type number
BZB84-C2V4
BZB84-C2V7
BZB84-C3V0
BZB84-C3V3
BZB84-C3V6
BZB84-C3V9
BZB84-C4V3
BZB84-C4V7
BZB84-C5V1
BZB84-C5V6
BZB84-C6V2
BZB84-C6V8
BZB84-C7V5
BZB84-C8V2
BZB84-C9V1
Marking code[1]
U9*
V9*
VA*
VB*
VC*
VD*
VE*
VF*
VG*
VH*
VK*
VL*
VM*
VN*
VP*
VR*
UA*
UB*
UC*
UD*
UE*
UF*
UG*
UH*
UK*
UL*
UM*
UN*
UP*
UR*
BZB84_SER_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 9 June 2009
2 of 14
BZB84 series
NXP Semiconductors
Dual Zener diodes
Table 4.
Marking codes …continued
Type number
BZB84-B10
BZB84-B11
BZB84-B12
BZB84-B13
BZB84-B15
BZB84-B16
BZB84-B18
BZB84-B20
BZB84-B22
BZB84-B24
BZB84-B27
BZB84-B30
BZB84-B33
BZB84-B36
BZB84-B39
BZB84-B43
BZB84-B47
BZB84-B51
BZB84-B56
BZB84-B62
BZB84-B68
BZB84-B75
Marking code[1]
Type number
BZB84-C10
BZB84-C11
BZB84-C12
BZB84-C13
BZB84-C15
BZB84-C16
BZB84-C18
BZB84-C20
BZB84-C22
BZB84-C24
BZB84-C27
BZB84-C30
BZB84-C33
BZB84-C36
BZB84-C39
BZB84-C43
BZB84-C47
BZB84-C51
BZB84-C56
BZB84-C62
BZB84-C68
BZB84-C75
Marking code[1]
US*
VS*
VT*
UT*
VU*
UU*
UV*
VV*
VW*
PT*
UW*
PB*
PU*
PC*
RP*
RQ*
PD*
PV*
PW*
PX*
PE*
PF*
PY*
PG*
PH*
PZ*
RA*
PJ*
RB*
PK*
RC*
RD*
RE*
PL*
PM*
PN*
RF*
PP*
RG*
RH*
RJ*
PQ*
PR*
PS*
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
IF
Parameter
Conditions
Min
Max
Unit
forward current
-
-
200
mA
[1]
[1]
IZSM
non-repetitive peak
reverse current
see
Table 8, 9,
10 and 11
PZSM
non-repetitive peak
-
40
W
reverse power dissipation
BZB84_SER_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 9 June 2009
3 of 14
BZB84 series
NXP Semiconductors
Dual Zener diodes
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per device
Ptot
Parameter
Conditions
Min
Max
Unit
[2]
total power dissipation
junction temperature
ambient temperature
storage temperature
Tamb ≤ 25 °C
-
300
mW
°C
Tj
-
150
Tamb
−55
−65
+150
+150
°C
Tstg
°C
[1] tp = 100 µs; square wave; Tj = 25 °C prior to surge
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
Table 6.
Symbol
Per device; single diode loaded
Thermal characteristics
Parameter
Conditions
Min
Typ
Max Unit
[1]
[2]
Rth(j-a)
thermal resistance from
junction to ambient
in free air
-
-
-
-
417
100
K/W
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Soldering points at pins 1 and 2.
7. Characteristics
Table 7.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol
Per diode
VF
Parameter
Conditions
Min
Typ
Max Unit
[1]
forward voltage
IF = 10 mA
-
-
0.9
V
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
BZB84_SER_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 9 June 2009
4 of 14
BZB84 series
NXP Semiconductors
Dual Zener diodes
Table 8.
Characteristics per type; BZB84-B2V4 to BZB84-B24
Tj = 25 °C unless otherwise specified.
BZB84- Working voltage
Differential
Reverse current Temperature
Diode
Non-repetitive
Bxxx
resistance
coefficient
capacitance peak reverse
VZ (V)
IR (µA)
current
rdif (Ω)
SZ (mV/K)
Cd (pF)[1]
IZSM (A)[2]
IZ = 5 mA
IZ = 1 mA IZ = 5 mA
IZ = 5 mA
Min
Max
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
10.20
11.20
12.20
13.30
15.30
16.30
18.40
20.4
22.4
24.5
Max
600
600
600
600
600
600
600
500
480
400
150
80
Max
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
Max
50
VR (V) Min
Max
0
Max
450
450
450
450
450
450
450
300
300
300
200
200
150
150
150
90
Max
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
1.25
1.25
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.80
10.80
11.80
12.70
14.70
15.70
17.60
19.6
21.6
23.5
1
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−2.7
−2.0
0.4
20
1
0
10
1
0
5
1
0
5
1
0
3
1
0
3
1
0
3
2
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
2
2
1
2
3
4
2
4
1.2
80
1
5
2.5
80
0.70
0.50
0.20
0.10
0.10
0.10
0.05
0.05
0.05
0.05
0.05
0.05
5
3.2
100
150
150
150
170
200
200
225
225
250
250
6
3.8
7
4.5
11
8
5.4
85
12
8
6.0
85
13
8
7.0
80
15
10.5
11.2
12.6
14.0
15.4
16.8
9.2
75
16
10.4
12.4
14.4
16.4
18.4
75
18
70
20
60
22
60
24
55
[1] f = 1 MHz; VR = 0 V
[2] tp = 100 µs; square wave; Tj = 25 °C prior to surge
BZB84_SER_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 9 June 2009
5 of 14
BZB84 series
NXP Semiconductors
Dual Zener diodes
Table 9.
Characteristics per type; BZB84-B27 to BZB84-B75
Tj = 25 °C unless otherwise specified.
BZB84- Working voltage Differential
Reverse current Temperature
Diode
Non-repetitive
Bxxx
resistance
coefficient
capacitance peak reverse
VZ (V)
IR (µA)
current
rdif (Ω)
SZ (mV/K)
Cd (pF)[1]
IZSM (A)[2]
IZ = 2 mA
Min
IZ = 0.5 mA IZ = 2 mA
IZ = 2 mA
Max
27.5
30.6
33.7
36.7
39.8
43.9
47.9
52.0
57.1
63.2
69.4
76.5
Max
300
300
325
350
350
375
375
400
425
450
475
500
Max
80
Max
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
VR (V) Min
Max
25.3
29.4
33.4
37.4
41.2
46.6
51.8
57.2
63.8
71.6
79.8
88.6
Max
50
50
45
45
45
40
40
40
40
35
35
35
Max
1.00
1.00
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.30
0.25
0.20
27
30
33
36
39
43
47
51
56
62
68
75
26.5
29.4
32.3
35.3
38.2
42.1
46.1
50.0
54.9
60.8
66.6
73.5
18.9
21.0
23.1
25.2
27.3
30.1
32.9
35.7
39.2
43.4
47.6
52.5
21.4
24.4
27.4
30.4
33.4
37.6
42.0
46.6
52.2
58.8
65.6
73.4
80
80
90
130
150
170
180
200
215
240
255
[1] f = 1 MHz; VR = 0 V
[2] tp = 100 µs; square wave; Tj = 25 °C prior to surge
BZB84_SER_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 9 June 2009
6 of 14
BZB84 series
NXP Semiconductors
Dual Zener diodes
Table 10. Characteristics per type; BZB84-C2V4 to BZB84-C24
Tj = 25 °C unless otherwise specified.
BZB84- Working voltage
Differential
resistance
Reverse current Temperature
Diode
Non-repetitive
Cxxx
coefficient
capacitance peak reverse
Cd (pF)[1]
VZ (V)
IR (µA)
current
IZSM (A)[2]
rdif (Ω)
SZ (mV/K)
IZ = 5 mA
IZ = 1 mA IZ = 5 mA
IZ = 5 mA
Min
2.2
Max
2.6
Max
600
600
600
600
600
600
600
500
480
400
150
80
Max
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
Max
50
VR (V) Min
Max
0
Max
450
450
450
450
450
450
450
300
300
300
200
200
150
150
150
90
Max
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
1.25
1.25
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
1
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−2.7
−2.0
0.4
2.5
2.9
20
1
0
2.8
3.2
10
1
0
3.1
3.5
5
1
0
3.4
3.8
5
1
0
3.7
4.1
3
1
0
4.0
4.6
3
1
0
4.4
5.0
3
2
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
4.8
5.4
2
2
5.2
6.0
1
2
5.8
6.6
3
4
6.4
7.2
2
4
1.2
7.0
7.9
80
1
5
2.5
7.7
8.7
80
0.70
0.50
0.20
0.10
0.10
0.10
0.05
0.05
0.05
0.05
0.05
0.05
5
3.2
8.5
9.6
100
150
150
150
170
200
200
225
225
250
250
6
3.8
9.4
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
7
4.5
11
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
8
5.4
85
12
8
6.0
85
13
8
7.0
80
15
10.5
11.2
12.6
14.0
15.4
16.8
9.2
75
16
10.4
12.4
14.4
16.4
18.4
75
18
70
20
60
22
60
24
55
[1] f = 1 MHz; VR = 0 V
[2] tp = 100 µs; square wave; Tj = 25 °C prior to surge
BZB84_SER_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 9 June 2009
7 of 14
BZB84 series
NXP Semiconductors
Dual Zener diodes
Table 11. Characteristics per type; BZB84-C27 to BZB84-C75
Tj = 25 °C unless otherwise specified.
BZB84- Working voltage Differential
Reverse current Temperature
Diode
Non-repetitive
Cxxx
resistance
coefficient
capacitance peak reverse
VZ (V)
IR (µA)
current
rdif (Ω)
SZ (mV/K)
Cd (pF)[1]
IZSM (A)[2]
IZ = 2 mA
Min
IZ = 0.5 mA IZ = 2 mA
IZ = 2 mA
Max
28.9
32.0
35.0
38.0
41.0
46.0
50.0
54.0
60.0
66.0
72.0
79.0
Max
300
300
325
350
350
375
375
400
425
450
475
500
Max
80
Max
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
VR (V) Min
Max
Max
50
50
45
45
45
40
40
40
40
35
35
35
Max
1.00
1.00
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.30
0.25
0.20
27
30
33
36
39
43
47
51
56
62
68
75
25.1
28.0
31.0
34.0
37.0
40.0
44.0
48.0
52.0
58.0
64.0
70.0
18.9
21.0
23.1
25.2
27.3
30.1
32.9
35.7
39.2
43.4
47.6
52.5
21.4
24.4
27.4
30.4
33.4
37.6
42.0
46.6
52.2
58.8
65.6
73.4
25.3
29.4
33.4
37.4
41.2
46.6
51.8
57.2
63.8
71.6
79.8
88.6
80
80
90
130
150
170
180
200
215
240
255
[1] f = 1 MHz; VR = 0 V
[2] tp = 100 µs; square wave; Tj = 25 °C prior to surge
mbg801
mbg781
3
10
300
P
I
ZSM
F
(W)
(mA)
2
200
10
(1)
(2)
10
100
1
10
0
0.6
−1
0.8
1
1
10
t
(ms)
V
(V)
p
F
(1) Tj = 25 °C (prior to surge)
(2) Tj = 150 °C (prior to surge)
Tj = 25 °C
Fig 1. Per diode: Non-repetitive peak reverse power
dissipation as a function of pulse duration;
maximum values
Fig 2. Per diode: Forward current as a function of
forward voltage; typical values
BZB84_SER_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 9 June 2009
8 of 14
BZB84 series
NXP Semiconductors
Dual Zener diodes
mbg782
mbg783
10
0
12
11
S
S
Z
(mV/K)
Z
4V3
(mV/K)
10
9V1
5
−1
3V9
3V6
8V2
7V5
6V8
6V2
5V6
5V1
0
−2
−3
3V3
4V7
3V0
2V4
2V7
−5
0
4
8
12
16
20
0
20
40
60
I
(mA)
Z
I
(mA)
Z
Tj = 25 °C to 150 °C
BZB84-B/C2V4 to BZB84-B/C4V3
Tj = 25 °C to 150 °C
BZB84-B/C4V7 to BZB84-B/C12
Fig 3. Per diode: Temperature coefficient as a
function of working current; typical values
Fig 4. Per diode: Temperature coefficient as a
function of working current; typical values
006aaa996
006aaa997
50
30
V
(V) = 10
V
(V) = 2.7
Z(nom)
Z(nom)
I
Z
I
Z
(mA)
3.3
3.9
4.7
5.6
(mA)
25
40
12
20
15
10
5
6.8
8.2
30
20
10
0
15
18 22
27
33 36
0
0
2
4
6
8
10
0
10
20
30
40
V
(V)
V (V)
Z
Z
Tj = 25 °C
BZB84-B/C2V7 to BZB84-B/C8V2
Tj = 25 °C
BZB84-B/C10 to BZB84-B/C36
Fig 5. Per diode: Working current as a function of
working voltage; typical values
Fig 6. Per diode: Working current as a function of
working voltage; typical values
BZB84_SER_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 9 June 2009
9 of 14
BZB84 series
NXP Semiconductors
Dual Zener diodes
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
3.0
2.8
1.1
0.9
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
0.48
0.38
0.15
0.09
1.9
Dimensions in mm
04-11-04
Fig 7. Package outline SOT23 (TO-236AB)
10. Packing information
Table 12. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
3000
-215
10000
BZB84-B2V4 to SOT23
BZB84-C75[2]
4 mm pitch, 8 mm tape and reel
-235
[1] For further information and the availability of packing methods, see Section 14.
[2] The series consists of 74 types with nominal working voltages from 2.4 V to 75 V.
BZB84_SER_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 9 June 2009
10 of 14
BZB84 series
NXP Semiconductors
Dual Zener diodes
11. Soldering
3.3
2.9
1.9
solder lands
solder resist
2
3
1.7
solder paste
occupied area
0.6
0.7
(3×)
(3×)
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
Fig 8. Reflow soldering footprint SOT23 (TO-236AB)
2.2
1.2
(2×)
1.4
(2×)
solder lands
solder resist
2.6
4.6
occupied area
Dimensions in mm
1.4
preferred transport direction during soldering
sot023_fw
2.8
4.5
Fig 9. Wave soldering footprint SOT23 (TO-236AB)
BZB84_SER_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 9 June 2009
11 of 14
BZB84 series
NXP Semiconductors
Dual Zener diodes
12. Revision history
Table 13. Revision history
Document ID
BZB84_SER_3
Modifications:
Release date
20090609
Data sheet status
Change notice
Supersedes
Product data sheet
-
BZB84_SER_2
• Table 5 “Limiting values”: Ptot maximum value amended
• Table 6: Rth maximum values amended
• Section 13 “Legal information”: updated
BZB84_SER_2
BZB84_SER_1
20090223
Product data sheet
-
-
BZB84_SER_1
-
20080514
Product data sheet
BZB84_SER_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 9 June 2009
12 of 14
BZB84 series
NXP Semiconductors
Dual Zener diodes
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BZB84_SER_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 9 June 2009
13 of 14
BZB84 series
NXP Semiconductors
Dual Zener diodes
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test information. . . . . . . . . . . . . . . . . . . . . . . . 10
Quality information . . . . . . . . . . . . . . . . . . . . . 10
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Packing information. . . . . . . . . . . . . . . . . . . . . 10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
3
4
5
6
7
8
8.1
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 9 June 2009
Document identifier: BZB84_SER_3
BZB84-C10 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| BZB84-C10,215 | ETC | DIODE ZENER ARRAY 10V SOT23 | 获取价格 |
|
| BZB84-C10,235 | NXP | 10V, 0.3W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB, PLASTIC PACKAGE-3 | 获取价格 |
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| BZB84-C10-Q | NEXPERIA | Dual voltage regulator diodesProduction | 获取价格 |
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| BZB84-C11 | NXP | Dual Zener diodes | 获取价格 |
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| BZB84-C11 | NEXPERIA | Dual Zener diodesProduction | 获取价格 |
|
| BZB84-C11,215 | ETC | DIODE ZENER ARRAY 11V SOT23 | 获取价格 |
|
| BZB84-C11,235 | NXP | 11V, 0.3W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB, PLASTIC PACKAGE-3 | 获取价格 |
|
| BZB84-C11-Q | NEXPERIA | Dual voltage regulator diodesProduction | 获取价格 |
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| BZB84-C12 | NXP | Dual Zener diodes | 获取价格 |
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| BZB84-C12 | NEXPERIA | Dual Zener diodesProduction | 获取价格 |
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