概述
数据手册
替代型号1N5347BG 概述
5 Watt Surmetic TM 40 Zener Voltage Regulators 5瓦Surmetic TM 40齐纳稳压器 齐纳二极管
1N5347BG 数据手册
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PDF下载1N5333B Series
Preferred Device
5 Watt Surmetict 40
Zener Voltage Regulators
This is a complete series of 5 Watt Zener diodes with tight limits and
better operating characteristics that reflect the superior capabilities of
silicon−oxide passivated junctions. All this in an axial lead,
transfer−molded plastic package that offers protection in all common
environmental conditions.
http://onsemi.com
Cathode
Anode
Features
• Zener Voltage Range − 3.3 V to 200 V
• ESD Rating of Class 3 (>16 kV) per Human Body Model
• Surge Rating of up to 180 W @ 8.3 ms
• Maximum Limits Guaranteed on up to Six Electrical Parameters
• Pb−Free Packages are Available
AXIAL LEAD
CASE 017AA
PLASTIC
Mechanical Characteristics
CASE: Void free, transfer−molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MARKING DIAGRAM
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230°C, 1/16 in. from the case for 10 seconds
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
A
1N
53xxB
YYWWG
G
MAXIMUM RATINGS
A
= Assembly Location
Rating
Symbol
Value
Unit
1N53xxB = Device Number
(Refer to Tables on Pages 3 & 4
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
Max. Steady State Power Dissipation
@ T = 75°C, Lead Length = 3/8 in
Derate above 75°C
P
5
W
D
YY
WW
G
L
40
mW/°C
°C
Operating and Storage
Temperature Range
T , T
−65 to +200
J
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
†
Device
Package
Shipping
1N53xxB, G
Axial Lead
(Pb−Free)
1000 Units/Box
1N53xxBRL, G Axial Lead
(Pb−Free)
4000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
May, 2006 − Rev. 7
1N5333B/D
1N5333B Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless
A
I
otherwise noted, V = 1.2 V Max @ I = 1.0 A for all types)
F
F
I
F
Symbol
Parameter
V
Reverse Zener Voltage @ I
Reverse Current
Z
ZT
I
ZT
Z
I
Maximum Zener Impedance @ I
Reverse Current
ZT
ZT
ZK
V
V
R
V
Z
I
I
ZK
V
R
ZT
F
Z
Maximum Zener Impedance @ I
ZK
I
Reverse Leakage Current @ V
Breakdown Voltage
R
R
V
R
I
Forward Current
F
V
I
Forward Voltage @ I
F
F
Zener Voltage Regulator
Maximum Surge Current @ T = 25°C
R
A
DV
Reverse Zener Voltage Change
Maximum DC Zener Current
Z
I
ZM
http://onsemi.com
2
1N5333B Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, V = 1.2 V Max @ I = 1.0 A for all types)
A
F
F
Leakage
Current
Zener Voltage (Note 2)
Zener Impedance (Note 2)
I
DV
I
ZM
R
Z
V
(Volts)
@ I
Z
ZT
@ I
Z
ZK
@ I
I
I @ V
R R
(Note 3) (Note 4) (Note 5)
Z
ZT
ZT
ZK
ZK
†
Device
(Note 1)
Device
Marking
Min Nom Max
mA
W
W
mA mA Max Volts
A
Volts
mA
1N5333B, G 1N5333B 3.14
1N5334B, G 1N5334B 3.42
1N5335B, G 1N5335B 3.71
1N5336B, G 1N5336B 4.09
1N5337B, G 1N5337B 4.47
3.3
3.6
3.9
4.3
4.7
3.47
3.78
4.10
4.52
4.94
380
350
320
290
260
3
400
500
500
500
450
1
1
1
1
1
300
150
50
10
5
1
1
1
1
1
20
0.85
0.8
0.54
0.49
0.44
1440
1320
1220
1100
1010
2.5
2
2
18.7
17.6
16.4
15.3
2
1N5338B, G 1N5338B 4.85
1N5339B, G 1N5339B 5.32
1N5340B, G 1N5340B 5.70
1N5341B, G 1N5341B 5.89
1N5342B, G 1N5342B 6.46
5.1
5.6
6.0
6.2
6.8
5.36
5.88
6.30
6.51
7.14
240
220
200
200
175
1.5
1
1
1
1
400
400
300
200
200
1
1
1
1
1
1
1
1
1
10
1
2
3
3
5.2
14.4
13.4
12.7
12.4
11.5
0.39
0.25
0.19
0.1
930
865
790
765
700
0.15
1N5343B, G 1N5343B 7.13
1N5344B, G 1N5344B 7.79
1N5345B, G 1N5345B 8.27
1N5346B, G 1N5346B 8.65
1N5347B, G 1N5347B 9.50
7.5
8.2
8.7
9.1
10
7.88
8.61
9.14
9.56
10.5
175
150
150
150
125
1.5
1.5
2
2
2
200
200
200
150
125
1
1
1
1
1
10
10
10
7.5
5
5.7
6.2
6.6
6.9
7.6
10.7
10
9.5
9.2
8.6
0.15
0.2
0.2
0.22
0.22
630
580
545
520
475
1N5348B, G 1N5348B 10.45
1N5349B, G 1N5349B 11.4
1N5350B, G 1N5350B 12.35
1N5351B, G 1N5351B 13.3
1N5352B, G 1N5352B 14.25
11
12
13
14
15
11.55 125
12.6 100
13.65 100
2.5
2.5
2.5
2.5
2.5
125
125
100
75
1
1
1
1
1
5
2
1
1
1
8.4
9.1
9.9
10.6
11.5
8.0
7.5
7.0
6.7
6.3
0.25
0.25
0.25
0.25
0.25
430
395
365
340
315
14.7
100
15.75
75
75
1N5353B, G 1N5353B 15.2
1N5354B, G 1N5354B 16.15
1N5355B, G 1N5355B 17.1
1N5356B, G 1N5356B 18.05
16
17
18
19
20
16.8
17.85
18.9
19.95
21
75
70
65
65
65
2.5
2.5
2.5
3
75
75
75
75
75
1
1
1
1
1
1
12.2
12.9
13.7
14.4
15.2
6.0
5.8
5.5
5.3
5.1
0.3
0.35
0.4
0.4
0.4
295
280
264
250
237
0.5
0.5
0.5
0.5
1N5357B, G 1N5357B
19
3
1N5358B, G 1N5358B 20.9
1N5359B, G 1N5359B 22.8
1N5360B, G 1N5360B 23.75
1N5361B, G 1N5361B 25.65
1N5362B, G 1N5362B 26.6
22
24
25
27
28
23.1
25.2
26.25
28.35
29.4
50
50
50
50
50
3.5
3.5
4
5
6
75
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
16.7
18.2
19
20.6
21.2
4.7
4.4
4.3
4.1
3.9
0.45
0.55
0.55
0.6
216
198
190
176
170
100
110
120
130
0.6
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.
1. TOLERANCE AND TYPE NUMBER DESIGNATION
The JEDEC type numbers shown indicate a tolerance of 5%.
2. ZENER VOLTAGE (V ) and IMPEDANCE (I and I )
Z
ZT
ZK
Test conditions for zener voltage and impedance are as follows: I is applied 40 10 ms prior to reading. Mounting contacts are located 3/8″
Z
to 1/2″ from the inside edge of mounting clips to the body of the diode (T = 25°C +8°C, −2°C).
A
3. SURGE CURRENT (I )
R
Surge current is specified as the maximum allowable peak, non−recurrent square−wave current with a pulse width, PW, of 8.3 ms. The data
given in Figure 5 may be used to find the maximum surge current for a square wave of any pulse width between 1 ms and 1000 ms by plotting
the applicable points on logarithmic paper. Examples of this, using the 3.3 V and 200 V zener are shown in Figure 6. Mounting contact located
as specified in Note 2 (T = 25°C +8°C, −2°C).
A
4. VOLTAGE REGULATION (DV )
Z
The conditions for voltage regulation are as follows: V measurements are made at 10% and then at 50% of the I max value listed in the
Z
Z
electrical characteristics table. The test current time duration for each V measurement is 40 10 ms. Mounting contact located as specified
Z
in Note 2 (T = 25°C +8°C, −2°C).
A
5. MAXIMUM REGULATOR CURRENT (I
)
ZM
The maximum current shown is based on the maximum voltage of a 5% type unit, therefore, it applies only to the B−suffix device. The actual
I
for any device may not exceed the value of 5 watts divided by the actual V of the device. T = 75°C at 3/8″ maximum from the device
ZM
Z L
body.
†The “G’’ suffix indicates Pb−Free package available.
http://onsemi.com
3
1N5333B Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, V = 1.2 V Max @ I = 1.0 A for all types)
A
F
F
Leakage
Current
Zener Voltage (Note 7)
Zener Impedance (Note 7)
I
DV
I
ZM
R
Z
V
(Volts)
@ I
Z
ZT
@ I
Z
ZK
@ I
I
I @ V
R R
(Note 8) (Note 9) (Note 10)
Z
ZT
ZT
ZK
ZK
†
Device
(Note 6)
Device
Marking
Min
Nom Max
mA
W
W
mA mA Max Volts
A
Volts
mA
1N5363B, G 1N5363B 28.5
1N5364B, G 1N5364B 31.35
1N5365B, G 1N5365B 34.2
1N5366B, G 1N5366B 37.05
1N5367B, G 1N5367B 40.85
30
33
36
39
43
31.5
34.65
37.8
40.95
45.15
40
40
30
30
30
8
140
150
160
170
190
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
22.8
25.1
27.4
29.7
32.7
3.7
3.5
3.5
3.1
2.8
0.6
0.6
0.65
0.65
0.7
158
144
132
122
110
10
11
14
20
1N5368B, G 1N5368B 44.65
1N5369B, G 1N5369B 48.45
1N5370B, G 1N5370B 53.2
47
51
56
60
62
49.35
53.55
58.8
63
25
25
20
20
20
25
27
35
40
42
210
230
280
350
400
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
35.8
38.8
42.6
45.5
47.1
2.7
2.5
2.3
2.2
2.1
0.8
0.9
1.0
1.2
1.35
100
93
86
79
76
1N5371B, G 1N5371B
57
1N5372B, G 1N5372B 58.9
65.1
1N5373B, G 1N5373B 64.6
1N5374B, G 1N5374B 71.25
1N5375B, G 1N5375B 77.9
1N5376B, G 1N5376B 82.65
1N5377B, G 1N5377B 86.45
68
75
82
87
91
71.4
78.75
86.1
91.35
95.55
20
20
15
15
15
44
45
65
75
75
500
620
720
760
760
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
51.7
56
62.2
66
2.0
1.9
1.8
1.7
1.6
1.52
1.6
1.8
2.0
2.2
70
63
58
54.5
52.5
69.2
1N5378B, G 1N5378B
95
100
105
12
12
10
10
8
90
800
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
76
1.5
1.4
1.3
1.2
1.2
2.5
2.5
2.5
2.5
2.5
47.5
43
39.5
36.6
34
1N5379B, G 1N5379B 104.5 110 115.5
1N5380B, G 1N5380B 114 120 126
1N5381B, G 1N5381B 123.5 130 136.5
1N5382B, G 1N5382B 133 140 147
125
170
190
230
1000
1150
1250
1500
83.6
91.2
98.8
106
1N5383B, G 1N5383B 142.5 150 157.5
1N5384B, G 1N5384B 152 160 168
1N5385B, G 1N5385B 161.5 170 178.5
1N5386B, G 1N5386B 171 180 189
1N5387B, G 1N5387B 180.5 190 199.5
1N5388B, G 1N5388B 190 200 210
8
8
8
5
5
330
350
380
430
450
1500
1650
1750
1750
1850
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
114
122
129
137
144
1.1
1.1
1.0
1.0
0.9
3.0
3.0
3.0
4.0
5.0
31.6
29.4
28
26.4
25
5
480
1850
1
0.5
152
0.9
5.0
23.6
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.
6. TOLERANCE AND TYPE NUMBER DESIGNATION
The JEDEC type numbers shown indicate a tolerance of 5%.
7. ZENER VOLTAGE (V ) and IMPEDANCE (I and I )
Z
ZT
ZK
Test conditions for zener voltage and impedance are as follows: I is applied 40 10 ms prior to reading. Mounting contacts are located 3/8″
Z
to 1/2″ from the inside edge of mounting clips to the body of the diode (T = 25°C +8°C, −2°C).
A
8. SURGE CURRENT (I )
R
Surge current is specified as the maximum allowable peak, non−recurrent square−wave current with a pulse width, PW, of 8.3 ms. The data
given in Figure 5 may be used to find the maximum surge current for a square wave of any pulse width between 1 ms and 1000 ms by plotting
the applicable points on logarithmic paper. Examples of this, using the 3.3 V and 200 V zener are shown in Figure 6. Mounting contact located
as specified in Note 7 (T = 25°C +8°C, −2°C).
A
9. VOLTAGE REGULATION (DV )
Z
The conditions for voltage regulation are as follows: V measurements are made at 10% and then at 50% of the I max value listed in the
Z
Z
electrical characteristics table. The test current time duration for each V measurement is 40 10 ms. Mounting contact located as specified
Z
in Note 7 (T = 25°C +8°C, −2°C).
A
10.MAXIMUM REGULATOR CURRENT (I
)
ZM
The maximum current shown is based on the maximum voltage of a 5% type unit, therefore, it applies only to the B−suffix device. The actual
I
for any device may not exceed the value of 5 watts divided by the actual V of the device. T = 75°C at 3/8″ maximum from the device
ZM
Z L
body.
†The “G’’ suffix indicates Pb−Free package available.
http://onsemi.com
4
1N5333B Series
40
30
20
L
L
10
0
PRIMARY PATH OF
CONDUCTION IS THROUGH
THE CATHODE LEAD
0
0.2
0.4
0.6
0.8
1
L, LEAD LENGTH TO HEATSINK (INCH)
Figure 1. Typical Thermal Resistance
TEMPERATURE COEFFICIENTS
300
200
10
8
100
50
6
RANGE
4
30
20
2
0
RANGE
10
5
−2
7
3
4
5
6
8
9
10
0
20 40 60 80 100 120 140 160 180 200 220
V , ZENER VOLTAGE @ I (VOLTS)
V , ZENER VOLTAGE @ I (VOLTS)
Z ZT
Z
ZT
Figure 2. Temperature Coefficient-Range
for Units 3 to 10 Volts
Figure 3. Temperature Coefficient-Range
for Units 10 to 220 Volts
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5
1N5333B Series
20
10
5
D = 0.5
D = 0.2
P
PK
t
1
D = 0.1
t
2
2
1
D = 0.05
DUTY CYCLE, D = t /t
1 2
SINGLE PULSE D T = q (t)P
D = 0.01
NOTE: BELOW 0.1 SECOND, THERMAL
NOTE: RESPONSE CURVE IS APPLICABLE
NOTE: TO ANY LEAD LENGTH (L).
JL
JL
REPETITIVE PULSES D T = q (t, D)P
PK
PK
0.5
0.2
JL
JL
D = 0
0.00
1
0.00
5
0.01
0.05
0.1
0.5
1
5
10
20
50
100
t, TIME (SECONDS)
Figure 4. Typical Thermal Response
L, Lead Length = 3/8 Inch
30
20
40
20
10
PWꢀ=ꢀ1ꢀms*
10
5
V ꢀ=ꢀ3.3ꢀV
Z
PWꢀ=ꢀ8.3ꢀms*
4
2
2
1
1
0.5
V ꢀ=ꢀ200ꢀV
Z
0.4
0.2
0.1
*SQUARE WAVE
PWꢀ=ꢀ100ꢀms*
PLOTTED FROM INFORMATION
GIVEN IN FIGURE 5
0.2
0.1
PWꢀ=ꢀ1000ꢀms*
30 40 60 80 100
NOMINAL V (V)
20
200
3
4
6
8 10
1
10
100
PW, PULSE WIDTH (ms)
1000
Z
Figure 5. Maximum Non-Repetitive Surge Current
versus Nominal Zener Voltage
(See Note 3)
Figure 6. Peak Surge Current versus Pulse Width
(See Note 3)
1000
100
10
Tꢀ=ꢀ25°C
Tꢀ=ꢀ25°C
1000
100
10
T ꢀ=ꢀ25°C
C
1
1
0.1
0.1
10
20
30
40
50
60
70
80
1
2
3
4
5
6
7
8
9
10
V , ZENER VOLTAGE (VOLTS)
Z
V , ZENER VOLTAGE (VOLTS)
Z
Figure 7. Zener Voltage versus Zener Current
VZ = 3.3 thru 10 Volts
Figure 8. Zener Voltage versus Zener Current
VZ = 11 thru 75 Volts
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6
1N5333B Series
100
10
1
0.1
80
100
120
140
160
180
200
220
V , ZENER VOLTAGE (VOLTS)
Z
Figure 9. Zener Voltage versus Zener Current
VZ = 82 thru 200 Volts
APPLICATION NOTE
Since the actual voltage available from a given Zener
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
For worst-case design, using expected limits of I , limits
Z
of P and the extremes of T (DT ) may be estimated.
D
J
J
Changes in voltage, V , can then be found from:
Z
DV = qVZ DTJ
q
, the Zener voltage temperature coefficient, is found
VZ
Lead Temperature, T , should be determined from:
L
from Figures 2 and 3.
TL = qLA PD + TA
Under high power-pulse operation, the Zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
q
is the lead-to-ambient thermal resistance and P is the
D
LA
power dissipation.
Junction Temperature, T , may be found from:
J
TJ = TL + DTJL
Data of Figure 4 should not be used to compute surge
capability. Surge limitations are given in Figure 5. They are
lower than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots resulting in device
degradation should the limits of Figure 5 be exceeded.
DT is the increase in junction temperature above the lead
temperature and may be found from Figure 4 for a train of
power pulses or from Figure 1 for dc power.
JL
DTJL = qJL PD
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7
1N5333B Series
PACKAGE DIMENSIONS
SURMETIC 40, AXIAL LEAD
CASE 017AA−01
ISSUE O
NOTES:
1. CONTROLLING DIMENSION: INCH
2. LEAD DIAMETER AND FINISH NOT CONTROLLED
WITHIN DIMENSION F.
3. CATHODE BAND INDICATES POLARITY
B
INCHES
DIM MIN MAX
MILLIMETERS
MIN
8.38
3.30
0.94
−−−
MAX
8.89
3.68
1.09
1.27
31.75
D
A
B
D
F
0.330
0.130
0.037
0.350
0.145
0.043
K
A
F
−−− 0.050
1.000 1.250
K
25.40
F
K
SURMETIC is a trademark of Semiconductor Components Industries, LLC (SCILLC).
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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1N5333B/D
1N5347BG CAD模型
原理图符号
PCB 封装图
3D模型
1N5347BG 替代型号
| 型号 | 制造商 | 描述 | 替代类型 | 文档 |
| 1N5347BRL | ONSEMI | 5 Watt Surmetic 40 Zener Voltage Refulators | 完全替代 |
|
| 1N5347B | ONSEMI | 5 Watt Surmetic 40 Zener Voltage Refulators | 完全替代 |
|
1N5347BG 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 1N5347BL | SUNMATE | Protection Devices Zener diode | 获取价格 |
|
| 1N5347BRL | ONSEMI | 5 Watt Surmetic 40 Zener Voltage Refulators | 获取价格 |
|
| 1N5347BRL | MOTOROLA | Zener Diode, 10V V(Z), 5%, 5W, Silicon, Unidirectional, PLASTIC, CASE 17-02, 2 PIN | 获取价格 |
|
| 1N5347BRL | STMICROELECTRONICS | 10V, 5W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE | 获取价格 |
|
| 1N5347BRLG | ONSEMI | 5 Watt Surmetic TM 40 Zener Voltage Regulators | 获取价格 |
|
| 1N5347BS | PANJIT | Lead free in compliance with EU RoHS 2011/65/EU directive | 获取价格 |
|
| 1N5347BS_AY_00001 | PANJIT | Lead free in compliance with EU RoHS 2011/65/EU directive | 获取价格 |
|
| 1N5347BS_AY_10001 | PANJIT | Lead free in compliance with EU RoHS 2011/65/EU directive | 获取价格 |
|
| 1N5347BS_B0_00001 | PANJIT | Lead free in compliance with EU RoHS 2011/65/EU directive | 获取价格 |
|
| 1N5347BS_B0_10001 | PANJIT | Lead free in compliance with EU RoHS 2011/65/EU directive | 获取价格 |
|
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