CR05BM-12A#BD0

更新时间:2025-02-08 10:57:44
品牌:RENESAS
描述:600V - 0.5A - Thyristor Low Power Use

CR05BM-12A#BD0 概述

600V - 0.5A - Thyristor Low Power Use

CR05BM-12A#BD0 数据手册

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Preliminary Datasheet  
CR05BM-12A  
600V - 0.5A - Thyristor  
R07DS0992EJ0100  
Rev.1.00  
Dec 20, 2012  
Low Power Use  
Features  
IT (AV) : 0.5 A  
DRM : 600 V  
IGT : 100 A  
Planar Type  
V
Outline  
RENESAS Package code: PRSS0003EA-A  
(Package name: TO-92*)  
1
1. Anode  
2. Gate  
3. Cathode  
2
3
3
2
1
Applications  
Igniter, solid state relay, strobe flasher, circuit breaker, and other general purpose control application  
Maximum Ratings  
Voltage class  
Parameter  
Symbol  
Unit  
12  
Repetitive peak reverse voltage  
Non-repetitive peak reverse voltage  
DC reverse voltage  
Repetitive peak off-state voltage Note1  
DC off-state voltage Note1  
VRRM  
VRSM  
VR(DC)  
VDRM  
VD(DC)  
600  
720  
480  
600  
480  
V
V
V
V
V
Notes: 1. With gate to cathode resistance RGK = 1 k.  
Parameter  
RMS on-state current  
Average on-state current  
Symbol  
IT (RMS)  
IT (AV)  
Ratings  
0.63  
Unit  
A
Conditions  
Commercial frequency, sine half  
0.4  
A
wave 180conduction, Ta = 54C  
Commercial frequency, sine half  
wave 180conduction, Ta = 30C  
50 Hz sine half wave 1 full cycle,  
peak value, non-repetitive  
0.5  
8
A
A
Surge on-state current  
I2t for fusion  
ITSM  
I2t  
0.32  
A2s  
Value corresponding to 1 cycle of half  
wave 50 Hz, surge on-state current  
Peak gate power dissipation  
Average gate power dissipation  
Peak gate forward voltage  
Peak gate reverse voltage  
Peak gate current  
PGM  
PG (AV)  
VFGM  
VRGM  
IFGM  
Tj  
0.5  
W
W
V
0.1  
6
6
V
0.3  
A
Junction Temperature  
Storage temperature  
Mass  
–40 to +125  
–40 to +125  
0.23  
C  
C  
g
Tstg  
Typical value  
R07DS0992EJ0100 Rev.1.00  
Dec 20, 2012  
Page 1 of 7  
CR05BM-12A  
Preliminary  
Electrical Characteristics  
Parameter  
Symbol  
IRRM  
Min.  
Typ.  
Max.  
0.5  
Unit  
mA  
mA  
Test conditions  
Repetitive peak reverse current  
Repetitive peak off-state current  
Tj = 125C, VRRM applied  
IDRM  
0.5  
Tj = 125C, VDRM applied,  
RGK = 1 k  
On-state voltage  
VTM  
VGT  
VGD  
IGT  
1.2  
0.8  
V
V
Tc = 25C, ITM = 1.2 A,  
instantaneous value  
Gate trigger voltage  
Gate non-trigger voltage  
Gate trigger current  
Holding current  
Tj = 25C, VD = 6 V,  
IT = 0.1 A Note3  
0.2  
1 Note2  
V
Tj = 125C, VD = 1/2 VDRM  
RGK = 1 k  
100Note2  
5
A  
mA  
C/W  
Tj = 25C, VD = 6 V,  
IT = 0.1 A Note3  
IH  
Tj = 25C, VD = 12 V,  
RGK = 1 k  
Thermal resistance  
Rth (j-a)  
150  
Junction to ambient  
Notes: 2. If special values of IGT are required, choose item D or E from those listed in the table below if possible.  
Item  
D
E
IGT (A)  
1 to 50  
20 to 100  
The above values do not include the current flowing through the 1 kresistance between the gate and cathode.  
Notes: 3. IGT, VGT measurement circuit.  
60Ω  
A1  
TUT  
I
I
GS  
GT  
A3  
A2  
6V  
DC  
3V  
DC  
V1  
R
GK  
1
2
V
1kΩ  
Switch  
GT  
Switch 1 : I  
measurement  
measurement  
(Inner resistance of voltage meter is about 1kΩ)  
GT  
Switch 2 : V  
GT  
R07DS0992EJ0100 Rev.1.00  
Dec 20, 2012  
Page 2 of 7  
CR05BM-12A  
Preliminary  
Performance Curves  
Maximum On-State Characteristics  
Rated Surge On-State Current  
102  
10  
8
Ta = 25°C  
101  
6
4
100  
2
101  
0
5
100  
101  
102  
0
1
2
3
4
On-State Voltage (V)  
Conduction Time (Cycles at 60Hz)  
Gate Trigger Current vs.  
Junction Temperature  
Gate Characteristics  
103  
102  
101  
100  
102  
101  
Typical Example  
V
= 6V  
P
= 0.5W  
GM  
FGM  
V
= 0.8V  
GT  
(Tj = 25°C)  
P
= 0.1W  
G(AV)  
100  
I
= 100μA  
(Tj = 25°C)  
GT  
101  
I
= 0.3V  
FGM  
V
= 0.2V  
GD  
102  
102  
101  
100  
101  
102  
0
40  
80  
120  
–40  
160  
Junction Temperature (°C)  
Gate Current (mA)  
Gate Trigger Voltage vs.  
Junction Temperature  
Maximum Transient Thermal Impedance  
Characteristics (Junction to ambient)  
100  
101  
102  
103  
103  
1.0  
0.8  
0.6  
0.4  
0.2  
0
Distribution  
Typical Example  
102  
101  
100  
–40 –20  
0
20 40 60 80 100 120  
103  
102  
101  
100  
Junction Temperature (°C)  
Time (s)  
R07DS0992EJ0100 Rev.1.00  
Dec 20, 2012  
Page 3 of 7  
CR05BM-12A  
Preliminary  
Allowable Ambient Temperature vs.  
Average On-State Current  
(Single-Phase Half Wave)  
Maximum Average Power Dissipation  
(Single-Phase Half Wave)  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
160  
140  
120  
100  
80  
60° 120°  
90°  
θ = 30°  
θ
180°  
360°  
Resistive,  
inductive loads  
Natural convection  
60  
θ = 30° 90°  
60° 120°  
180°  
θ
40  
360°  
20  
Resistive,  
inductive loads  
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8  
Average On-State Current (A)  
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8  
Average On-State Current (A)  
Allowable Ambient Temperature vs.  
Average On-State Current  
(Single-Phase Full Wave)  
Maximum Average Power Dissipation  
(Single-Phase Full Wave)  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
160  
140  
120  
100  
80  
90°  
60° 120°  
180°  
θ = 30°  
θ
θ
360°  
Resistive loads  
Natural convection  
60  
40  
θ
θ
360°  
20  
θ = 30° 60° 90° 120° 180°  
Resistive loads  
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8  
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8  
Average On-State Current (A)  
Average On-State Current (A)  
Allowable Ambient Temperature vs.  
Average On-State Current  
(Rectangular Wave)  
Maximum Average Power Dissipation  
(Rectangular Wave)  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
160  
140  
120  
100  
80  
90° 180°  
60° 120°270°  
θ = 30°  
θ
DC  
360°  
Resistive,  
inductive loads  
Natural convection  
60  
θ
40  
360°  
60° 120°  
90° 180°  
270°  
20  
Resistive,  
inductive loads  
θ = 30°  
DC  
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8  
Average On-State Current (A)  
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8  
Average On-State Current (A)  
R07DS0992EJ0100 Rev.1.00  
Dec 20, 2012  
Page 4 of 7  
CR05BM-12A  
Preliminary  
Breakover Voltage vs.  
Gate to Cathode Resistance  
Breakover Voltage vs.  
Junction Temperature  
160  
120  
100  
80  
60  
40  
20  
0
Typical Example  
Typical Example  
140  
120  
100  
80  
60  
40  
20  
R
= 1kΩ  
GK  
Tj = 125°C  
0
–40  
0
40  
80  
120  
160  
101  
100  
101  
102  
Gate to Cathode Resistance (kΩ)  
Junction Temperature (°C)  
Breakover Voltage vs.  
Rate of Rise of Off-State Voltage  
Holding Current vs.  
Junction Temperature  
160  
140  
120  
100  
80  
101  
Distribution  
Typical Example  
Tj = 125°C  
= 1kΩ  
Typical Example  
(25°C) = 35μA  
R
GK  
I
GT  
100  
60  
101  
40  
20  
R
= 1kΩ  
GK  
102  
–40  
0
100  
101  
102  
103  
0
40  
80  
120  
160  
Rate of Rise of Off-State Voltage (V/μs)  
Junction Temperature (°C)  
Turn-On Time vs.  
Gate Current  
Holding Current vs.  
Gate to Cathode Resistance  
600  
102  
Typical Example  
V = 100V  
D
R = 47Ω  
Typical Example  
L
500  
400  
300  
200  
100  
0
R
= 1kΩ  
GK  
Ta = 25°C  
101  
100  
Tj = 125°C  
100  
101  
101  
101  
102  
101  
100  
101  
102  
Gate Current (mA)  
Gate to Cathode Resistance (kΩ)  
R07DS0992EJ0100 Rev.1.00  
Dec 20, 2012  
Page 5 of 7  
CR05BM-12A  
Preliminary  
Turn-Off Time vs.  
Junction Temperature  
Repetitive Peak Reverse Voltage vs.  
Junction Temperature  
40  
160  
140  
120  
100  
80  
V
= 50V, V = 50V  
R
D
I
T
= 2A, R  
= 1kΩ  
GK  
35  
30  
25  
20  
15  
10  
5
Typical Example  
Distribution  
60  
40  
20  
0
0
–40  
0
20 40 60 80 100 120 140 160  
Junction Temperature (°C)  
0
40  
80  
120  
160  
Junction Temperature (°C)  
Gate Trigger Current vs.  
Gate Current Pulse Width  
104  
103  
102  
101  
Typical Example  
V
= 6V  
= 60Ω  
D
R
Ta = 25°C  
L
100  
101  
102  
103  
Gate Current Pulse Width (μs)  
R07DS0992EJ0100 Rev.1.00  
Dec 20, 2012  
Page 6 of 7  
CR05BM-12A  
Preliminary  
Package Dimensions  
Package Name  
TO-92*  
JEITA Package Code  
SC-43A  
RENESAS Code  
PRSS0003EA-A  
Previous Code  
T920  
MASS[Typ.]  
0.23g  
Unit: mm  
φ5.0Max  
4.4  
1.251.25  
Circumscribed circle φ0.7  
Ordering Information  
Orderable Part Number (example)  
CR05BM-12A#B00  
Packing  
Bag  
Quantity  
Remark  
500 pcs. Straight type  
CR05BM-12A-D#B00  
Bag  
500 pcs. Straight type, IGT item: D  
500 pcs. A6 Lead form  
CR05BM-12A-A6#B00  
CR05BM-12A-DA6#B00  
CR05BM-12A-TB#B00  
CR05BM-12A-DTB#B00  
Bag  
Bag  
500 pcs. A6 Lead form, IGT item: D  
2000 pcs. A8 Lead form  
Adhesive Tape  
Adhesive Tape  
2000 pcs. A8 Lead form, IGT item: D  
Note: Please confirm the specification about the shipping in detail.  
R07DS0992EJ0100 Rev.1.00  
Dec 20, 2012  
Page 7 of 7  
SALES OFFICES  
http://www.renesas.com  
Refer to "http://www.renesas.com/" for the latest and detailed information.  
Renesas Electronics America Inc.  
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.  
Tel: +1-408-588-6000, Fax: +1-408-588-6130  
Renesas Electronics Canada Limited  
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada  
Tel: +1-905-898-5441, Fax: +1-905-898-3220  
Renesas Electronics Europe Limited  
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K  
Tel: +44-1628-651-700, Fax: +44-1628-651-804  
Renesas Electronics Europe GmbH  
Arcadiastrasse 10, 40472 Düsseldorf, Germany  
Tel: +49-211-65030, Fax: +49-211-6503-1327  
Renesas Electronics (China) Co., Ltd.  
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China  
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679  
Renesas Electronics (Shanghai) Co., Ltd.  
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China  
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898  
Renesas Electronics Hong Kong Limited  
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong  
Tel: +852-2886-9318, Fax: +852 2886-9022/9044  
Renesas Electronics Taiwan Co., Ltd.  
13F, No. 363, Fu Shing North Road, Taipei, Taiwan  
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670  
Renesas Electronics Singapore Pte. Ltd.  
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949  
Tel: +65-6213-0200, Fax: +65-6213-0300  
Renesas Electronics Malaysia Sdn.Bhd.  
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia  
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510  
Renesas Electronics Korea Co., Ltd.  
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea  
Tel: +82-2-558-3737, Fax: +82-2-558-5141  
© 2012 Renesas Electronics Corporation. All rights reserved.  
Colophon 2.2  

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