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P0102DA 2AL3

更新时间：2024-12-04 10:24:59

品牌：STMICROELECTRONICS

描述：敏感栅极0.8 A 400 V SCR晶闸管

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P0102DA 2AL3 概述

敏感栅极0.8 A 400 V SCR晶闸管

P0102DA 2AL3 数据手册

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P01 Series

SENSITIVE

0.8A SCRs

MAIN FEATURES:

Symbol

Value

0.8

Unit

T(RMS)

400 and 600

5 to 200

DRM RRM

µA

DESCRIPTION

Thanks to highly sensitive triggering levels, the

P01 SCR series is suitable for all applications

where available gate current is limited, such as

ground fault circuit interruptors, pilot circuits in

solid state relays, stand-by mode power supplies,

smoke and alarm detectors.

SOT-223

(P01xxN)

TO-92

(P01xxA)

Available in through-hole or surface mount pack-

ages, the voltage capability of this series has been

upgrated since its introduction, to reach 600 V.

ABSOLUTE RATINGS (limiting values)

Symbol

Parameter

Value

Unit

RMS on-state current

(180° conduction angle)

TO-92

SOT-223

TO-92

Tl = 55°C

Tamb = 70°C

Tl = 55°C

T(RMS)

0.8

0.5

Average on-state current

(180° conduction angle)

(AV)

SOT-223

tp = 8.3 ms

tp = 10 ms

Tamb = 70°C

Non repetitive surge peak on-state

current

TSM

Tj = 25°C

tp = 10ms

F = 60 Hz

tp = 20 µs

Tj = 25°C

0.24

A S

I t

I t Value for fusing

Critical rate of rise of on-state current

dI/dt

Tj = 125°C

A/µs

= 2 x I , tr ≤ 100 ns

Peak gate current

Tj = 125°C

Average gate power dissipation

0.1

G(AV)

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

stg

°C

September 2000 - Ed: 3

1/6

P01 Series

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

P01xx

Symbol

Test Conditions

Unit

MIN.

MAX.

MIN.

0.5

µA

200

0.8

= 12 V

R = 140 Ω

Tj = 125°C

= V

R = 3.3 kΩ

= 1 kΩ

0.1

DRM

MIN.

= 10 µA

I = 50 mA

= 1 kΩ

MAX.

= 1 mA

R = 1 kΩ

dV/dt

= 67 % V

= 1 kΩ

Tj = 125°C

Tj = 25°C

Tj = 125°C

MIN.

MAX.

V/µs

DRM

= 1.6 A tp = 380 µs

1.95

0.95

600

Threshold voltage

Dynamic resistance

mΩ

µA

= V

= 400 V

= 600 V

= 1 kΩ

DRM

RRM

Tj = 25°C

µA

RRM

Tj = 125°C

MAX.

100

THERMAL RESISTANCES

Symbol

Parameter

Value

Unit

Junction to case (DC)

°C/W

TO-92

th(j-i)

Junction to tab (DC)

Junction to ambient

SOT-223

TO-92

th(j-t)

150

°C/W

th(j-a)

SOT-223

S = 5 cm

S = Copper surface under tab

PRODUCT SELECTOR

Voltage

Part Number

Sensitivity

Package

400 V

600 V

P0102DA

P0102DN

P0102MA

P0102MN

P0111DA

P0111DN

P0111MA

P0111MN

P0118DA

P0118DN

P0118MA

P0118MN

200 µA

25 µA

5 µA

TO-92

SOT-223

TO-92

SOT-223

TO-92

SOT-223

TO-92

SOT-223

TO-92

5 µA

SOT-223

TO-92

5 µA

SOT-223

2/6

P01 Series

ORDERING INFORMATION

Blank

P 01 02 D N

1AA3

SENSITIVE

SCR

SERIES

PACKING MODE:

1AA3:TO-92 bulk (preferred)

2AL3:TO-92 ammopack

5AA4: SOT-223 Tape & Reel

VOLTAGE:

D: 400V

M: 600V

PACKAGE:

A:TO-92

N: SOT-223

CURRENT: 0.8A

SENSITIVITY:

02: 200µA

11: 25µA

18: 5µA

OTHER INFORMATION

Part Number

Marking

Weight

Base Quantity

Packing mode

P01xxyA 1AA3

P01xxyA 2AL3

P0102yN 5AA4

P0111yN 5AA4

P0118yN 5AA4

P01xxyA

0.2 g

2500

2000

1000

Bulk

Ammopack

P2y

P1y

P8y

0.12 g

Tape & reel

Note: xx = sensitivity, y = voltage

Fig. 1: Maximum average power dissipation

Fig. 2-1: Average and D.C. on-state current

versus average on-state current.

versus lead temperature.

P(W)

IT(av)(A)

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

0.1

0.0

Tlead or Ttab (°C)

100

125

0.0

0.1

0.2

0.3

0.4

0.5

0.6

Fig. 2-2: Average and D.C. on-state current

versus ambient temperature (device mounted on

FR4 with recommended pad layout for SOT-223).

Fig. 3: Relative variation of thermal impedance

junction to ambient versus pulse duration.

K = [Zth(j-a)/Rth(j-a)]

IT(av)(A)

1.00

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.10

0.1

0.0

Tamb(°C)

tp(s)

0.01

1E-2

100

125

1E-1

1E+0

1E+1

1E+2 5E+2

3/6

P01 Series

Fig. 4: Relative variation of gate trigger current,

holding current and latching current versus

junction temperature (typical values).

Fig. 5:Relative variation of holding current versus

gate-cathode resistance (typical values).

IH[Rgk]/IH[Rgk=1kΩ]

IGT, IH, IL[Tj] / IGT, IH, IL[T] = 25°C

Tj(°C)

Rgk(kΩ)

-40 -20

80 100 120 140

Fig. 6: Relative variation of dV/dt immunity

Fig. 7: Relative variation of dV/dt immunity

versus gate-cathode resistance (typical values).

versus gate-cathode capacitance (typical values).

dV/dt[Cgk] / dV/dt[Rgk=1kΩ]

dV/dt[Rgk] / dV/dt[Rgk=1kΩ]

10.0

1.0

Rgk(kΩ)

Cgk(nF)

0.1

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

Fig. 8: Surge peak on-state current versus

number of cycles.

Fig. 9: Non-repetitive surge peak on-state

current for sinusoidal pulse with width

tp < 10 ms, and corresponding value of I²t.

ITSM(A), I²t(A²s)

ITSM(A)

100.0

tp=10ms

Onecycle

10.0

1.0

Non repetitive

Tj initial=25°C

Repetitive

Tamb=25°C

tp(ms)

Numberofcycles

100 1000

0.1

0.01

10.00

1.00

0.10

4/6

P01 Series

Fig. 10: On-state characteristics (maximum

values).

Fig. 11: SOT-223 Thermal resistance junction to

ambient versus copper surface under tab (Epoxy

printed circuit board FR4, copper thickness:

35 µm).

ITM(A)

Rth(j-a) (°C/W)

1E+1

130

120

110

100

Ω

1E+0

1E-1

S (cm²)

VTM(V)

1E-2

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

0.5

1.0

1.5 2.0

2.5

3.0

3.5

4.0 4.5

PACKAGE MECHANICAL DATA

TO-92 (Plastic)

DIMENSIONS

REF.

Millimeters

Inches

Min. Typ. Max. Min. Typ. Max.

1.35

2.54

0.053

0.100

4.70

0.185

4.40

0.173

0.500

12.70

3.70

0.50

0.146

0.019

5/6

P01 Series

PACKAGE MECHANICAL DATA

SOT-223 (Plastic)

DIMENSIONS

REF.

Millimeters

Inches

Min. Typ. Max. Min. Typ. Max.

1.80

0.071

0.004

0.02

0.60

2.90

0.24

6.30

0.1 0.0008

0.70 0.85 0.024 0.027 0.034

3.00 3.15 0.114 0.118 0.124

0.26 0.35 0.009 0.010 0.014

6.50 6.70 0.248 0.256 0.264

2.3

4.6

0.090

0.181

3.30

6.70

3.50 3.70 0.130 0.138 0.146

7.00 7.30 0.264 0.276 0.287

10° max

FOOTPRINT DIMENSIONS (in millimeters)

SOT-223 (Plastic)

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences

of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted

by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject

to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not

authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

STMicroelectronics GROUP OF COMPANIES

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Singapore - Spain - Sweden - Switzerland - United Kingdom

http://www.st.com

6/6

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