概述
规格参数
数据手册TC4423EPA 概述
3A DUAL HIGH-SPEED POWER MOSFET DRIVERS 3A双高速功率MOSFET驱动器 MOSFET 驱动器
TC4423EPA 规格参数
| 是否Rohs认证： | 不符合 | 生命周期： | Transferred |
| 包装说明： | DIP, DIP8,.3 | Reach Compliance Code： | unknown |
| 风险等级： | 5.65 | 高边驱动器： | NO |
| 输入特性： | SCHMITT TRIGGER | 接口集成电路类型： | BUFFER OR INVERTER BASED MOSFET DRIVER |
| JESD-30 代码： | R-PDIP-T8 | JESD-609代码： | e0 |
| 功能数量： | 2 | 端子数量： | 8 |
| 最高工作温度： | 85 °C | 最低工作温度： | -40 °C |
| 输出特性： | TOTEM-POLE | 标称输出峰值电流： | 3 A |
| 输出极性： | INVERTED | 封装主体材料： | PLASTIC/EPOXY |
| 封装代码： | DIP | 封装等效代码： | DIP8,.3 |
| 封装形状： | RECTANGULAR | 封装形式： | IN-LINE |
| 电源： | 4.5/18 V | 认证状态： | Not Qualified |
| 子类别： | MOSFET Drivers | 表面贴装： | NO |
| 技术： | CMOS | 温度等级： | INDUSTRIAL |
| 端子面层： | Tin/Lead (Sn/Pb) | 端子形式： | THROUGH-HOLE |
| 端子节距： | 2.54 mm | 端子位置： | DUAL |
| 断开时间： | 0.1 µs | 接通时间： | 0.1 µs |
| Base Number Matches： | 1 |
TC4423EPA 数据手册
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TC4423
TC4424
TC4425
3A DUAL HIGH-SPEED POWER MOSFET DRIVERS
FEATURES
GENERAL DESCRIPTION
■ High Peak Output Current .................................. 3A
■ Wide Operating Range ..........................4.5V to 18V
■ High Capacitive Load
Drive Capability ......................... 1800 pF in 25nsec
■ Short Delay Times ............................. < 40nsec Typ
■ Matched Rise/Fall Times
The TC4423/4424/4425 are higher output current ver-
sions of the new TC4426/4427/4428 buffer/drivers, which,
in turn, are improved versions of the earlier TC426/427/428
series. All three families are pin-compatible. The TC4423/
4424/4425 drivers are capable of giving reliable service in
farmoredemandingelectricalenvironmentsthantheirante-
cedents.
AlthoughprimarilyintendedfordrivingpowerMOSFETs,
the TC4423/4424/4425 drivers are equally well-suited to
driving any other load (capacitive, resistive, or inductive)
which requires a low impedance driver capable of high peak
currents and fast switching times. For example, heavily
loadedclocklines, coaxialcables, orpiezoelectrictransduc-
ers can all be driven from the TC4423/4424/4425. The only
known limitation on loading is the total power dissipated in
the driver must be kept within the maximum power dissipa-
tion limits of the package.
■ Low Supply Current
— With Logic "1" Input ................................ 3.5 mA
— With Logic "0" Input ................................ 350 µA
■ Low Output Impedance ............................. 3.5Ω Typ
■ Latch-Up Protected . Will Withstand 1.5A Reverse
Current
■ Logic Input Will Withstand Negative Swing Up
to 5V
■ ESD Protected....................................................4 kV
■ Pinouts Same as TC1426/27/28; TC4426/27/28
ORDERING INFORMATION
Temperature
Part No.
Package
Range
Temperature
Part No
Package
Range
TC4423COE
TC4423CPA
TC4423EOE
TC4423EPA
TC4423MJA
16-Pin SOIC (Wide)
8-Pin Plastic DIP
0°C to +70°C
0°C to +70°C
TC4424EPA
TC4424MJA
8-Pin Plastic DIP
8-Pin CerDIP
– 40°C to +85°C
– 55°C to +125°C
16-Pin SOIC (Wide) – 40°C to +85°C
8-Pin Plastic DIP
8-Pin CerDIP
– 40°C to +85°C
– 55°C to +125°C
TC4425COE
TC4425CPA
TC4425EOE
TC4425EPA
TC4425MJA
16-Pin SO Wide
8-Pin Plastic DIP
16-Pin SO Wide
8-Pin Plastic DIP
8-Pin CerDIP
0°C to +70°C
0°C to +70°C
– 40°C to +85°C
– 40°C to +85°C
– 55°C to +125°C
TC4424COE
TC4424CPA
TC4424EOE
16-Pin SOIC (Wide)
8-Pin Plastic DIP
16-Pin SO Wide
0°C to +70°C
0°C to +70°C
– 40°C to +85°C
FUNCTIONAL BLOCK DIAGRAM
V
DD
INVERTING
300 mV
OUTPUT
NONINVERTING
INPUT
4.7V
TC4423
DUAL INVERTING
TC4424
TC4425
DUAL NONINVERTING
ONE INV., ONE NONINV.
GND
EFFECTIVE
NOTES:
INPUT C = 20 pF
(EACH INPUT)
1. TC4425 has one inverting and one noninverting driver.
2. Ground any unused driver input.
TC4423/4/5-6 10/21/96
TELCOM SEMICONDUCTOR, INC.
4-237
3A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
TC4423
TC4424
TC4425
PDIP RθJ-C ..................................................... 45°C/W
SOIC RθJ-A ................................................... 155°C/W
SOIC RθJ-C ..................................................... 75°C/W
Operating Temperature Range
C Version ............................................... 0°C to +70°C
I Version ............................................- 25°C to +85°C
E Version ...........................................- 40°C to +85°C
M Version ........................................- 55°C to +125°C
Package Power Dissipation (TA ≤ 70°C)
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +22V
Input Voltage, IN A or IN B...... VDD + 0.3V to GND – 5.0V
Maximum Chip Temperature................................. +150°C
Storage Temperature Range ................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
Package Thermal Resistance
CerDIP RθJ-A ................................................ 150°C/W
CerDIP RθJ-C .................................................. 55°C/W
PDIP RθJ-A ................................................... 125°C/W
Plastic DIP ......................................................730mW
CerDIP ............................................................800mW
SOIC ...............................................................470mW
PIN CONFIGURATIONS
4423
NC
4424
NC
4425
NC
16-Pin SO Wide
NC
IN A
NC
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
4423
NC
4424
NC
4425
NC
8-Pin DIP
OUT A OUT A
OUT A OUT A
OUT A
OUT A
1
2
3
4
8
7
6
5
NC
IN A
GND
V
GND
V
DD
V
DD
DD
OUT A OUT A OUT A
TC4423
TC4424
TC4425
TC4423
TC4424
TC4425
GND
NC
V
V
DD
V
DD
V
V
V
DD
DD
DD
DD
IN B
OUT B OUT B OUT B
OUT B
OUT B OUT B
IN B
NC
OUT B OUT B OUT B
NC
NC
NC
NC = NO CONNECTION
NOTE: Duplicate pins must both be connected for proper operation.
ELECTRICAL CHARACTERISTICS: TA = +25°C with 4.5V ≤ VDD ≤ 18V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max Unit
Input
VOH
VIL
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current
2.4
—
—
—
—
—
0.8
1
V
V
IIN
0V ≤ VIN ≤ VDD
– 1
µA
Output
VOH
VOL
RO
High Output Voltage
Low Output Voltage
VDD – 0.025
—
—
2.8
3.5
3
—
0.025
5
V
V
Ω
Ω
A
A
—
—
Output Resistance, High
Output Resistance, Low
Peak Output Current
IOUT = 10 mA, VDD = 18V
IOUT = 10 mA, VDD = 18V
RO
—
5
IPK
—
—
IREV
Latch-Up Protection
Withstand Reverse Current
Duty Cycle ≤ 2%
t ≤ 300 µsec
1.5
—
—
Switching Time (Note 1)
tR
Rise Time
Fall Time
Figure 1, CL = 1800 pF
Figure 1, CL = 1800 pF
Figure 1, CL = 1800 pF
Figure 1, CL = 1800 pF
—
—
—
—
23
25
33
38
35
35
75
75
nsec
nsec
nsec
nsec
tF
tD1
tD2
Delay Time
Delay Time
Power Supply
IS
Power Supply Current
VIN = 3V (Both Inputs)
VIN = 0V (Both Inputs)
—
—
1.5
0.15
2.5
0.25
mA
mA
4-238
TELCOM SEMICONDUCTOR, INC.
3A DUAL HIGH-SPEED
POWER --MOSFET DRIVERS
4
TC4423
TC4424
TC4425
ELECTRICAL CHARACTERISTICS (Cont.):
Over operating temperature range with 4.5V ≤ VDD ≤ 18V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
VIH
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current
2.4
—
—
—
—
—
0.8
10
V
VIL
V
IIN
0V ≤ VIN ≤ VDD
– 10
µA
Output
VOH
VOL
RO
High Output Voltage
Low Output Voltage
VDD – 0.025
—
—
3.7
4.3
3
—
0.025
8
V
V
Ω
Ω
A
A
—
—
Output Resistance, High
Output Resistance, Low
Peak Output Current
IOUT = 10 mA, VDD = 18V
IOUT = 10 mA, VDD = 18V
RO
—
8
IPK
—
—
IREV
Latch-Up Protection
Duty Cycle ≤ 2%
t ≤ 300 µsec
1.5
—
—
Withstand Reverse Current
Switching Time (Note 1)
tR
Rise Time
Fall Time
Figure 1, CL = 1800 pF
Figure 1, CL = 1800 pF
Figure 1, CL = 1800 pF
Figure 1, CL = 1800 pF
—
—
—
—
28
32
32
38
60
60
nsec
nsec
nsec
nsec
tF
tD1
Delay Time
Delay Time
100
100
tD2
Power Supply
IS
Power Supply Current
VIN = 3V (Both Inputs)
VIN = 0V (Both Inputs)
—
—
2
0.2
3.5
0.3
mA
NOTE: 1. Switching times guaranteed by design.
V
= 16V
V
= 16V
DD
Test Circuit
Test Circuit
DD
1 µF
WIMA
MKS-2
1 µF
WIMA
0.1 µF CERAMIC
0.1 µF CERAMIC
MKS-2
INPUT
INPUT
1
2
OUTPUT
= 1800pF
1
2
OUTPUT
C
C
= 1800pF
L
L
INPUT: 100 kHz,
square wave,
INPUT: 100 kHz,
square wave,
t
= t
≤ 10 nsec
TC4424
(1/2 TC4425)
TC4423
(1/2 TC4425)
RISE FALL
t
= t
≤ 10 nsec
RISE FALL
+5V
+5V
90%
90%
INPUT
INPUT
10%
10%
0V
0V
t
t
D1
D2
16V
t
t
F
R
90%
10%
90%
16V
t
t
D1
D2
90%
90%
t
t
F
R
OUTPUT
0V
OUTPUT
0V
10%
10%
10%
Figure 1. Inverting Driver Switching Time
Figure 2. Noninverting Driver Switching Time
TELCOM SEMICONDUCTOR, INC.
4-239
3A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
TC4423
TC4424
TC4425
TYPICAL CHARACTERISTICS
Rise Time vs. Supply Voltage
Fall Time vs. Supply Voltage
100
80
60
40
20
0
100
4700 pF
80
4700 pF
3300 pF
2200 pF
3300 pF
60
2200 pF
40
1500 pF
1000 pF
1500 pF
1000 pF
20
470 pF
6
470 pF
0
14
16
18
4
6
8
10
12
14
16
18
4
8
10
12
V
V
DD
DD
Fall TIme vs. Capacitive Load
Rise TIme vs. Capacitive Load
100
80
60
40
20
0
100
80
60
40
20
0
5V
5V
10V
15V
10V
15V
100
1000
10,000
100
1000
10,000
C
(pF)
C
LOAD
LOAD (pF)
Propagation Delay vs. Input Amplitude
Rise and Fall Times vs. Temperature
32
30
28
26
24
22
20
18
100
80
60
40
20
C
= 2200 pF
C
V
= 2200 pF
LOAD
LOAD
t
FALL
= 10V
DD
t
D1
t
RISE
t
t
RISE
FALL
t
D2
0
1
2
3
4
5
6
7
8
9
10 11 12
–55 –35 –15
5
25 45 65 85 105 125
(°C)
INPUT (V)
T
A
4-240
TELCOM SEMICONDUCTOR, INC.
3A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
4
TC4423
TC4424
TC4425
TYPICAL CHARACTERISTICS (Cont.)
Propagation Delay Time vs. Supply Voltage
50
Delay Time vs. Temperature
50
45
40
35
30
25
20
C
= 2200 pF
LOAD
C
= 2200 pF
LOAD
45
40
35
30
25
20
t
D2
D2
t
t
D2
t
D2
4
6
8
10
12
DD
14
16
18
–55 –35 –15
5
25 45 65 85 105 125
(°C)
V
T
A
Quiescent Current vs. Supply Voltage
Quiescent Current vs. Temperature
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
T
= +25°C
A
BOTH INPUTS = 1
BOTH INPUTS = 0
1
INPUTS = 1
INPUTS = 0
0.1
0.01
4
6
8
10
12
14
16
18
–55 –35 –15
5
25 45 65 85 105 125
(°C)
V
DD
T
A
Output Resistance (Output High)
vs. Supply Voltage
Output Resistance (Output Low)
vs. Supply Voltage
14
12
10
8
14
12
10
8
WORST CASE @ T = +150°C
WORST CASE @ T = +150°C
J
J
6
6
TYP @ T = +25°C
TYP @ T = +25°C
4
4
A
A
2
2
4
6
8
10
12
DD
14
16
18
4
6
8
10
12
14
16
18
V
V
DD
TELCOM SEMICONDUCTOR, INC.
4-241
3A DUAL HIGH-SPEED
MOSFET DRIVERS
TC4423
TC4424
TC4425
SUPPLY CURRENT CHARACTERISTICS (Load on Single Output Only)
Supply Current vs. Capacitive Load
Supply Current vs. Frequency
60
50
40
30
20
10
0
60
50
40
30
20
10
0
3300 pF
1000 pF
V
= 18V
V
= 18V
DD
DD
634 kHz
355 kHz
10,000 pF
100 pF
200 kHz
63.4 kHz
112.5 kHz
35.5 kHz
20 kHz
100
1000
10,000
10
100
1000
C
(pF)
FREQUENCY (kHz)
LOAD
Supply Current vs. Frequency
Supply Current vs. Capacitive Load
90
80
70
60
50
40
30
20
10
0
90
80
70
60
50
40
30
20
10
0
V
= 12V
DD
3300 pF
1000 pF
V
= 12V
DD
2 MHz
1.125 MHz
100 pF
200 kHz
10,000 pF
634 kHz
355 kHz
112.5 kHz
63.4 kHz
20 kHz
10
100
1000
100
1000
10,000
C
(pF)
FREQUENCY (kHz)
LOAD
Supply Current vs. Capacitive Load
Supply Current vs. Frequency
120
100
80
60
40
20
0
120
100
80
60
40
20
0
4700 pF
V
= 6V
DD
V
= 6V
DD
10,000 pF
1.125 MHz
2200 pF
3.55 MHz
2 MHz
1000 pF
100 pF
634 kHz
355 kHz
112.5 kHz
20 kHz
10
100
FREQUENCY (kHz)
1000
100
1000
10,000
C
(pF)
LOAD
4-242
TELCOM SEMICONDUCTOR, INC.
3A DUAL HIGH-SPEED
MOSFET DRIVERS
4
TC4423
TC4424
TC4425
Thermal Derating Curves
TC4423 Crossover Energy
1400
1200
1000
800
–8
10
8 Pin DIP
8
6
4
16 Pin SOIC
2
–9
8
6
10
8 Pin CerDIP
600
400
200
0
4
2
–10
10
0
2
4
6
8
10 12 14 16 18
0
20
40
60
80
120 140
100
V
IN
AMBIENT TEMPERATURE (°C)
NOTE: The values on this graph
represent the loss seen by both drivers in
a package during one complete cycle. For
a single driver, divide the stated values by
2. For a single transition of a single driver,
divide the stated value by 4.
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings (See page 2) may
cause permanent damage to the device. These are stress ratings only and
functional operation of the device at these or any other conditions above
those indicated in the operational sections of the specifications is not
implied. Exposure to Absolute Maximum Rating Conditions for extended
periods may affect device reliability.
TELCOM SEMICONDUCTOR, INC.
4-243
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| TC4423EPAG | MICROCHIP | 3 A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDIP8, 0.300 INCH, PLASTIC, MS-001, DIP-8 | 获取价格 |
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