UC1709DW

更新时间:2024-12-04 13:11:20
品牌:TI
描述:1.5A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO16, SOIC-16

UC1709DW 概述

1.5A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO16, SOIC-16 MOSFET 驱动器

UC1709DW 规格参数

生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP,针数:16
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.37
Is Samacsys:N高边驱动器:YES
接口集成电路类型:BUFFER OR INVERTER BASED MOSFET DRIVERJESD-30 代码:R-PDSO-G16
长度:10.3 mm功能数量:2
端子数量:16最高工作温度:125 °C
最低工作温度:-55 °C标称输出峰值电流:1.5 A
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified座面最大高度:2.65 mm
最大供电电压:40 V最小供电电压:5 V
标称供电电压:20 V表面贴装:YES
技术:BIPOLAR温度等级:MILITARY
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL断开时间:0.04 µs
接通时间:0.04 µs宽度:7.5 mm
Base Number Matches:1

UC1709DW 数据手册

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UC1709, UC2709, UC3709  
DUAL HIGH-SPEED FET DRIVER  
SLUS196A -- NOVEMBER 1996 -- REVISED MARCH 2000  
D
D
D
D
D
D
1.5 Amp Source/Sink Drive  
Pin Compatible with 0026 Products  
40 ns Rise and Fall into 1000pF  
Low Quiescent Current  
5 V to 40 V Operation  
Thermal Protection  
simplified schematic (only one driver shown)  
V
CC  
5 VOLT  
REGULATOR  
THERMAL  
SENSE  
description  
The UC3709 family of power drivers is an  
effective low-cost solution to the problem of  
providing fast turn-on and off for the  
capacitive gates of power MOSFETs. Made  
with a high-speed Schottky process, these  
devices will provide up to 1.5 A of either  
source or sink current from a totem--pole  
output stage configured for minimal  
cross-conduction current spike.  
INPUT  
A OR B  
6 k  
INPUT  
A OR B  
5.6 V  
The UC3709 is pin compatible with the  
MMH0026 or DS0026, and while the delay  
times are longer, the supply current is much  
less than these older devices.  
GND  
UDG--00068  
With inverting logic, these units feature complete TTL compatibility at the inputs with an output stage that can  
swing over 30 V. This design also includes thermal shutdown protection.  
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)}  
N--Pkg  
J--Pkg  
Supply Voltage, V  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 V . . . . . . . . . . . . . . . . . . . . . . . 40V  
CC  
Output Current (Source or Sink)  
Steady--State . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±500 mA . . . . . . . . . . . . . . . . . . . ±500 mA  
Peak Transient . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±1.5 A . . . . . . . . . . . . . . . . . . . . . ±1.0 A  
Capacitive Discharge Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mJ . . . . . . . . . . . . . . . . . . . . . . 15 mJ  
Digital Inputs} . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5 V . . . . . . . . . . . . . . . . . . . . . . 5.5 V  
Power Dissipation at T = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 W . . . . . . . . . . . . . . . . . . . . . . . 1 W  
A
Power Dissipation at T = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 W . . . . . . . . . . . . . . . . . . . . . . . 2 W  
C
Operating Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . --55°C to 125°C . . . . . . . . . . . . . --55°C to 125°C  
Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . --65°C to 150°C . . . . . . . . . . . . . --65°C to 150°C  
Lead Temperature (Soldering, 10 Seconds) . . . . . . . . . . . . . . . . . . . . . . 300°C . . . . . . . . . . . . . . . . . . . . . 300 °C  
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and  
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
All currents are positive into and negative out of the specified terminals. Digital drive can exceed 5.5V if input is limited to 10A. Consult the  
Packaging Section of the Databook for thermal limitations and considerations of the package.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright ã 2000, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 · DALLAS, TEXAS 75265  
                                                                                                                                                                 
                                                                                                                                                                 
                    
                    
                                                        
                                                        
                                                                     
                                                                     
                                                                                                            
                                                                                                             
                                                                                                                         
                                                                                                                         
                                                                                                   
                                                                                                   
UC1709, UC2709, UC3709  
DUAL HIGH-SPEED FET DRIVER  
SLUS196A -- NOVEMBER 1996 -- REVISED MARCH 2000  
PLCC--20, LCC--20 (TOP VIEW)  
Q, L PACKAGES  
8 PIN DIL N OR J PACKAGE  
(TOP VIEW)  
SOIC--16 (TOP VIEW)  
DW PACKAGE  
N/C  
INPUT A  
GROUND  
INPUT B  
N/C  
1
2
3
4
8
7
6
5
N/C  
N/C  
16  
V
1
2
3
4
5
6
7
8
CC  
OUTPUT A  
15 N/C  
V
CC  
N/C  
14 N/C  
OUTPUT B  
3
2
1
20 19  
OUTPUT A  
N/C  
13 OUTPUT B  
12 N/C  
N/C  
N/C  
4
5
6
7
8
18 N/C  
17 N/C  
N/C -- No internal connection  
INPUT A  
N/C  
11 INPUT B  
10 N/C  
GROUND  
N/C  
16  
VCC  
15 N/C  
14 N/C  
N/C  
GROUND  
9 N/C  
9
10 11 12 13  
electrical characteristics over recommended operating free-air temperature range, TA = 55°C to  
125°C for the UC1709, --40°C to 85°C for the UC2709, and 0°C to 70°C for the UC3709;  
VCC = 20 V, TA = TJ.  
PARAMETER  
TEST CONDITIONS  
Both outputs low  
Both outputs high  
MIN  
TYP  
10  
MAX  
12  
UNIT  
mA  
mA  
V
Supply current  
7
10  
Logic 0 input voltage  
Logic 1 input voltage  
Input current  
0.8  
2.2  
V
V = 0  
-- 0 . 6  
0.05  
1.5  
-- 1 . 0  
0.1  
2.0  
2.5  
0.4  
2.5  
mA  
mA  
V
I
Input leakage  
V = 5 V  
I
I
I
I
I
= --50 mA  
= --500 mA  
= 50 mA  
O
O
O
O
Output high saturation V -- V  
CC  
O
2.0  
V
0.1  
V
Output low saturation V  
Thermal shutdown  
O
= 500 mA  
2.0  
V
155  
mA  
typical switching characteristics, VCC = 20 V, TA = 25°C, delays measured to 10% output change  
OUTPUT C  
=
L
PARAMETER  
TEST CONDITIONS  
UNITS  
0 nF  
2.2 nF  
80  
Rise time delay  
10% to 90% rise  
Fall time delay  
10% to 90% fall  
80  
20  
60  
20  
25  
0
ns  
ns  
ns  
ns  
ns  
ns  
40  
80  
40  
Output rise  
Output fall  
VCC cross-- conduction  
curent spike duration  
NOTE: Refer to UC1705 specifications for further information.  
2
POST OFFICE BOX 655303 · DALLAS, TEXAS 75265  
UC1709, UC2709, UC3709  
DUAL HIGH-SPEED FET DRIVER  
SLUS196A -- NOVEMBER 1996 -- REVISED MARCH 2000  
APPLICATION INFORMATION  
D1, D2: UC3611 Schottky Diodes  
Figure 1. Power bipolar drive circuit.  
D1, D2: UC3611 Schottky Diodes  
Figure 2. Power MOSFET drive circuit.  
Figure 3. Charge pump circuits.  
3
POST OFFICE BOX 655303 · DALLAS, TEXAS 75265  
UC1709, UC2709, UC3709  
DUAL HIGH-SPEED FET DRIVER  
SLUS196A -- NOVEMBER 1996 -- REVISED MARCH 2000  
D1, D2: UC3611 Schottky Diodes  
Figure 4. Transformer coupled push--pull MOSFET drive circuit.  
D1, D2: UC3611 Schottky Diodes  
Figure 5. Power MOSFET drive circuit using negative bias voltage  
and level shifting to ground referenced PWM  
4
POST OFFICE BOX 655303 · DALLAS, TEXAS 75265  
UC1709, UC2709, UC3709  
DUAL HIGH-SPEED FET DRIVER  
SLUS196A -- NOVEMBER 1996 -- REVISED MARCH 2000  
D1, D2: UC3611 Schottky Diodes  
Figure 6. Transformer coupled MOSFET drive circuit.  
5
POST OFFICE BOX 655303 · DALLAS, TEXAS 75265  

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