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1N5256B

更新时间：2025-06-30 11:01:59
品牌：TSC
描述：DO-35, 500mW, 5%, Zener Diode

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中文翻译

免费 PCB/SMT

1N5256B 概述

DO-35, 500mW, 5%, Zener Diode 齐纳二极管

1N5256B 规格参数

是否Rohs认证： 符合生命周期：Active
包装说明：O-LALF-W2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.26外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：ZENER DIODEJEDEC-95代码：DO-35
JESD-30 代码：O-LALF-W2JESD-609代码：e3
元件数量：1端子数量：2
最高工作温度：200 °C最低工作温度：-65 °C
封装主体材料：GLASS封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT SPECIFIED
极性：UNIDIRECTIONAL最大功率耗散：0.5 W
认证状态：Not Qualified标称参考电压：30 V
表面贴装：NO技术：ZENER
端子面层：Tin (Sn)端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：NOT SPECIFIED
最大电压容差：5%工作测试电流：4.2 mA

1N5256B 数据手册

通过下载1N5256B数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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LESHAN RADIO COMPANY, LTD.  
1N52 SERIES  
ZENER DIODES  
1N52  
1N52 SERIES ZENER DIODES  
1N5221B Through 1N5272B ELECTRICAL CHARACTERISTICS  
(T A =25 C)unless otherwise noted.Based on dc measurements at thermal equillibrium;lead length=3/8”;thermal resistance of heat  
sink=30  
°
°
C/W VFmax=1.1V @ I F=200mA for all types(T A = 25  
°
C
VFmax=1.1V@ I F=200mA  
)
Max Zener Impedance  
A and B Sufflx only  
Max Reverse  
Leakage Current  
Nominal  
Zener  
Voltage  
Vz@LZT  
Volts  
Test  
Current  
I ZT  
Max Zener Voltege  
Temperature Coff  
(A amd Bsuffix only)  
Package  
TYPE  
ZK  
ZK  
Z @I  
R
V
R
I
Dimensions  
Z ZT@I ZT  
Ohms  
mA  
Volts  
B
= 0.25mA  
Ohms  
VZ(%/  
°
C)  
µA  
1N5221B 2.4  
1N5222B 2.5  
1N5223B 2.7  
1N5224B 2.8  
1N5225B 3.0  
1N5226B 3.3  
1N5227B 3.6  
1N5228B 3.9  
1N5229B 4.3  
1N5230B 4.7  
1N5231B 5.1  
1N5232B 5.6  
1N5233B 6.0  
1N5234B 6.2  
1N5235B 6.8  
1N5236B 7.5  
1N5237B 8.2  
1N5238B 8.7  
1N5239B 9.1  
1N5240B 10  
1N5241B 11  
1N5242B 12  
1N5243B 13  
1N5244B 14  
1N5245B 15  
1N5246B 16  
1N5247B 17  
1N5248B 18  
1N5249B 19  
1N5250B 20  
1N5251B 22  
1N5252B 24  
1N5253B 25  
1N5254B 27  
1N5255B 28  
30  
30  
30  
30  
29  
28  
24  
23  
22  
19  
17  
11  
7.0  
7.0  
5.0  
6.0  
8.0  
8.0  
10  
17  
22  
30  
13  
15  
16  
17  
19  
21  
23  
25  
29  
33  
35  
41  
44  
1200  
100  
-0.085  
1250  
1300  
1400  
1600  
1600  
1700  
1900  
2000  
1900  
1600  
1600  
1600  
1000  
750  
100  
75  
-0.085  
-0.08  
20  
20  
20  
20  
1.0  
75  
-0.08  
50  
-0.075  
-0.07  
25  
1.0  
1.0  
1.0  
1.0  
2.0  
2.0  
3.0  
3.5  
4.0  
5.0  
6.0  
6.5  
6.5  
7.0  
8.0  
8.4  
9.1  
9.9  
10  
15  
-0.065  
-0.06  
10  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
3.0  
±0.055  
±0.03  
±0.03  
+0.038  
+0.038  
+0.045  
+0.05  
500  
+0.058  
+0.062  
+0.065  
+0.068  
+0.075  
+0.076  
+0.077  
+0.079  
+0.082  
+0.082  
+0.083  
+0.084  
+0.085  
+0.086  
+0.086  
+0.087  
+0.088  
+0.089  
+0.090  
+0.091  
500  
600  
3.0  
600  
600  
DO-35  
(mm)  
20  
2.0  
1.0  
0.5  
0.1  
0.1  
20  
9.5  
9.0  
8.5  
7.8  
7.4  
7.0  
6.6  
6.2  
5.6  
5.2  
5.0  
4.6  
4.5  
600  
600  
600  
11  
12  
13  
0.1  
0.1  
14  
14  
15  
17  
18  
19  
21  
21  
NOTE: The VZ value shown is the center value with tolerance designations  
Vz  
B
C
D
Vz  
Vz  
Vz  
± 5%  
± 2%  
± 1%  
as follows:  
suffix B: VZ ± 5%  
suffix C: VZ ± 2%  
suffix D: VZ ± 1%  
2B–1/2  
LESHAN RADIO COMPANY, LTD.  
1N52  
1N52 SERIES ZENER DIODES  
1N5221B Through 1N5272B ELECTRICAL CHARACTERISTICS  
(T A =25 C)unless otherwise noted.Based on dc measurements at thermal equillibrium;lead length=3/8”;thermal resistance of heat  
sink=30  
°
°
C/W VFmax=1.1V @ I F=200mA for all types(T A = 25  
°
C
VFmax=1.1V@ I F=200mA  
)
Max Zener Impedance  
A and B Sufflx only  
Max Reverse  
Leakage Current  
Nominal  
Zener  
Voltage  
Vz@LZT  
Volts  
Test  
Current  
I ZT  
Max Zener Voltege  
Temperature Coff  
(A amd Bsuffix only)  
Package  
TYPE  
ZK  
ZK  
Z @I  
R
V
R
I
Dimensions  
ZZT@I ZT  
Ohms  
mA  
Volts  
B
= 0.25mA  
Ohms  
VZ(%/  
°
C)  
µA  
1N5256B 30  
1N5257B 33  
1N5258B 36  
1N5259B 39  
1N5260B 43  
1N5261B 47  
1N5262B 51  
1N5263B 56  
1N5264B 60  
1N5265B 62  
1N5266B 68  
1N5267B 75  
1N5268B 82  
1N5269B 87  
1N5270B 91  
1N5271B 100  
1N5272B 110  
4.2  
3.8  
3.4  
3.2  
3.0  
2.7  
2.5  
2.2  
2.1  
2.0  
1.8  
1.7  
1.5  
1.4  
1.4  
1.3  
1.1  
49  
600  
23  
25  
+0.091  
58  
700  
+0.092  
+0.093  
+0.094  
+0.095  
+0.095  
+0.096  
+0.096  
+0.097  
+0.097  
+0.097  
+0.098  
+0.098  
+0.099  
+0.099  
+0.110  
+0.110  
70  
700  
0.1  
27  
30  
33  
36  
39  
43  
46  
47  
52  
56  
62  
68  
69  
76  
84  
80  
800  
93  
900  
105  
125  
150  
170  
185  
230  
270  
330  
370  
400  
500  
750  
1000  
1100  
1300  
1400  
1400  
1600  
1700  
2000  
2200  
2300  
2600  
3000  
0.1  
0.1  
0.1  
DO-35  
(mm)  
NOTE: The VZ value shown is the center value with tolerance designations  
Vz  
B
C
D
Vz  
Vz  
Vz  
± 5%  
± 2%  
± 1%  
as follows:  
suffix B: VZ ± 5%  
suffix C: VZ ± 2%  
suffix D: VZ ± 1%  
2B–2/2  

1N5256B 相关器件

型号 制造商 描述 价格 文档
1N5256B(DO-35) MICROSEMI Zener Voltage Regulator Diode 获取价格
1N5256B(DO-35) MCC Zener Diode, 30V V(Z), 0.5W, Silicon, Unidirectional, DO-35, DO-35, 2 PIN 获取价格
1N5256B-1 MICROSEMI Zener Diode, 30V V(Z), 5%, 0.48W, Silicon, Unidirectional, DO-204AH, HERMETIC SEALED, GLASS, DO-35, 2 PIN 获取价格
1N5256B-13 DIODES Zener Diode, 30V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-35, HERMETIC SEALED, GLASS PACKAGE-2 获取价格
1N5256B-1E3 MICROSEMI Zener Diode, 30V V(Z), 5%, 0.48W, Silicon, Unidirectional, DO-204AH, ROHS COMPLIANT, HERMETIC SEALED, GLASS, DO-35, 2 PIN 获取价格
1N5256B-1E3TR MICROSEMI Zener Diode, 30V V(Z), 5%, 0.48W, Silicon, Unidirectional, DO-204AH, HERMETIC SEALED, GLASS, DO-35, 2 PIN 获取价格
1N5256B-1TR MICROSEMI Zener Diode, 30V V(Z), 5%, 0.48W, Silicon, Unidirectional, DO-204AH, HERMETIC SEALED, GLASS, DO-35, 2 PIN 获取价格
1N5256B-1TRE3 MICROSEMI Zener Diode, 30V V(Z), 5%, 0.23W, 获取价格
1N5256B-A DIODES 500mW EPITAXIAL ZENER DIODE 获取价格
1N5256B-A MCC Zener Diode, 30V V(Z), 5%, 0.5W, 获取价格

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