BZT52B3V0-G3-18中文资料_数据手册_规格书

BZT52-G-Series

Vishay Semiconductors

www.vishay.com

Small Signal Zener Diodes

FEATURES

• Silicon planar power Zener diodes

• The Zener voltages are graded according to

the international E24 standard

• AEC-Q101 qualified available 

(part number on request)

• ESD capability according to AEC-Q101:

Human body model > 8 kV

Machine model > 800 V

click logo to get started

DESIGN SUPPORT TOOLS

• Base P/N-G3 - green, commercial grade

Models

• Material categorization:

Available

for definitions of compliance please see

www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

PARAMETER

VALUE

2.4 to 75

2.5; 5

UNIT

V

V_Zrange nom.

Test current I_ZT

V_Zspecification

Circuit configuration

mA

Pulse current

Single

ORDERING INFORMATION

DEVICE NAME

ORDERING CODE

TAPED UNITS PER REEL

MINIMUM ORDER QUANTITY

BZT52C2V4-G3-08 to BZT52C75-G3-08

BZT52B2V4-G3-08 to BZT52B75-G3-08

BZT52C2V4-G3-18 to BZT52C75-G3-18

BZT52B2V4-G3-18 to BZT52B75-G3-18

3000 (8 mm tape on 7" reel)

15 000/box

10 000/box

BZT52-G-series

10 000 (8 mm tape on 13" reel)

PACKAGE

MOLDING COMPOUND

WEIGHT

MOISTURE SENSITIVITY

LEVEL

PACKAGE NAME

SOLDERING CONDITIONS

FLAMMABILITY RATING

MSL level 1

(according J-STD-020)

SOD-123

9.4 mg

UL 94 V-0

260 °C/10 s at terminals

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Diode on ceramic substrate 0.7 mm;

5 mm²pad areas

P_tot

500

mW

Power dissipation

Diode on ceramic substrate 0.7 mm;

P_tot

410

mW

2.5 mm²pad areas

Zener current

See Table “Electrical Characteristics”

Valid provided that electrodes are kept at

ambient temperature

Thermal resistance junction to ambient air

R_thJA

300

K/W

T_j

Junction temperature

150

°C

T_stg

T_op

Storage temperature range

Operating temperature range

-65 to +150

-55 to +150

Rev. 1.3, 22-Feb-18

Document Number: 83340

1

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BZT52-G-Series

Vishay Semiconductors

www.vishay.com

ELECTRICAL CHARACTERISTICS (T_amb= 25 °C, unless otherwise specified)

ADMISSIBLE

ZENER

ZENER VOLTAGE

RANGE ⁽¹⁾

TEST

CURRENT

REVERSE

VOLTAGE

DYNAMIC

RESISTANCE

TEMP.

COEFFICIENT

CURRENT ⁽⁴⁾

I_Zat

MARKING

CODE

PART NUMBER

V_Zat I_ZT1

I_ZT1I_ZT2

mA

V_Rat I_R

Z_Zat I_ZT1Z_ZKat I_ZT2

_VZ

T_amb

=

T_amb=

45 °C

25 °C

V

nA



10^-4/°C

mA

MIN. NOM. MAX.

BZT52C2V4-G

BZT52C2V7-G

BZT52C3V0-G

BZT52C3V3-G

BZT52C3V6-G

BZT52C3V9-G

BZT52C4V3-G

BZT52C4V7-G

BZT52C5V1-G

BZT52C5V6-G

BZT52C6V2-G

BZT52C6V8-G

BZT52C7V5-G

BZT52C8V2-G

BZT52C9V1-G

BZT52C10-G

BZT52C11-G

BZT52C12-G

BZT52C13-G

BZT52C15-G

BZT52C16-G

BZT52C18-G

BZT52C20-G

BZT52C22-G

BZT52C24-G

BZT52C27-G

BZT52C30-G

BZT52C33-G

BZT52C36-G

BZT52C39-G

BZT52C43-G

BZT52C47-G

BZT52C51-G

BZT52C56-G

BZT52C62-G

BZT52C68-G

BZT52C75-G

Y1

Y2

Y3

Y4

Y5

Y6

Y7

Y8

Y9

YA

YB

YC

YD

YE

YF

YG

YH

YI

2.2

2.5

2.8

3.1

3.4

3.7

4

2.4

2.7

3.0

3.3

3.6

3.9

4.3

4.7

5.1

5.6

6.2

6.8

7.5

8.2

9.1

10

11

12

13

15

16

18

20

22

24

27

30

33

36

39

43

47

51

56

62

68

75

2.6

2.9

3.2

3.5

3.8

4.1

4.6

5

1

-

100

85

600

-9 to -4

-

113

98

92

85

77

71

64

56

50

45

41

37

34

30

28

25

23

21

19

17

15

14

13

11

10

9

-

134

118

109

100

92

84

76

67

59

54

49

44

40

36

33

30

28

25

23

20

18

17

16

13

12

10

9

100 75 (< 83)

100 80 (< 95)

100 70 (< 78)

< 500

< 480

< 400

< 200

< 150

< 50

5

-9 to -3

5

-8 to -3

5

-8 to -3

5

-7 to -3

5

-6 to -1

4.4

4.8

5.2

5.8

6.4

7

5

-5 to +2

5.4

6

5

> 0.8 100 30 (< 60)

-3 to +4

5

> 1

> 2

> 3

> 5

> 6

> 7

100 10 (< 40)

100 4.8 (< 10)

-2 to +6

6.6

7.2

7.9

8.7

9.6

10.6

11.6

12.7

14.1

15.6

17.1

19.1

21.2

23.3

25.6

28.9

32

5

-1 to +7

5

100

4.5 (< 8)

4 (< 7)

+2 to +7

+3 to +7

+4 to +7

+5 to +8

+5 to +9

+6 to +9

+7 to +9

+8 to +9.5

+8 to +10

+10 to +12

5

7.7

8.5

9.4

10.4

11.4

12.4

13.8

15.3

16.8

18.8

20.8

22.8

25.1

28

5

4.5 (< 7)

< 50

5

100 4.8 (< 10)

< 50

5

> 7.5 100 5.2 (< 15)

< 70

5

> 8.5 100

> 9 100

> 10 100

6 (< 20)

7 (< 20)

9 (< 25)

< 70

5

< 90

YK

YL

YM

YN

YO

YP

YR

YS

YT

YU

YW

YX

YY

YZ

Z1

Z2

Z3

Z4

Z5

5

< 110

< 170

< 220

< 250

< 300

< 700

< 750

5

> 11 100 11 (< 30)

> 12 100 13 (< 40)

> 14 100 18 (< 50)

> 15 100 20 (< 50)

> 17 100 25 (< 55)

> 18 100 28 (< 80)

> 20 100 30 (< 80)

> 22.5 100 35 (< 80)

> 25 100 40 (< 80)

> 27 100 40 (< 90)

> 29 100 50 (< 90)

> 32 100 60 (< 100)

> 35 100 70 (< 100)

> 38 100 70 (< 100)

5

31

35

5

8

34

38

5

8

9

37

41

5

7

8

40

46

5

6

7

44

50

5

6

48

54

5

6

52

60

2.5

-

100

< 135 ⁽²⁾< 1000 ⁽³⁾typ. +10 ⁽²⁾

< 150 ⁽²⁾< 1000 ⁽³⁾typ. +10 ⁽²⁾

-

58

66

100

-

(2)

64

72

100 < 200

100 < 250

< 1000 ⁽³⁾typ. +10

-

(2)

70

79

-

Notes

•

I_ZT1= 5 mA, I_ZT2= 1 mA

Measured with pulses t_p= 5 ms

I_ZT1= 2.5 mA

(1)

(2)

(3)

(4)

I_ZT2= 0.5 mA

Valid provided that electrodes are kept at ambient temperature

Rev. 1.3, 22-Feb-18

Document Number: 83340

2

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BZT52-G-Series

Vishay Semiconductors

www.vishay.com

ELECTRICAL CHARACTERISTICS (T_amb= 25 °C, unless otherwise specified)

ADMISSIBLE

ZENER

ZENER VOLTAGE

RANGE ⁽¹⁾

TEST

CURRENT

REVERSE

VOLTAGE

DYNAMIC

RESISTANCE

TEMP.

COEFFICIENT

CURRENT ⁽⁴⁾

I_Zat

MARKING

CODE

PART NUMBER

V_Zat I_ZT1

I_ZT1I_ZT2

mA

V_Rat I_R

Z_Zat I_ZT1Z_ZKat I_ZT2

_VZ

T_amb

=

T_amb=

45 °C

25 °C

V

nA



10^-4/°C

mA

MIN. NOM. MAX.

BZT52B2V4-G

BZT52B2V7-G

BZT52B3V0-G

BZT52B3V3-G

BZT52B3V6-G

BZT52B3V9-G

BZT52B4V3-G

BZT52B4V7-G

BZT52B5V1-G

BZT52B5V6-G

BZT52B6V2-G

BZT52B6V8-G

BZT52B7V5-G

BZT52B8V2-G

BZT52B9V1-G

BZT52B10-G

BZT52B11-G

BZT52B12-G

BZT52B13-G

BZT52B15-G

BZT52B16-G

BZT52B18-G

BZT52B20-G

BZT52B22-G

BZT52B24-G

BZT52B27-G

BZT52B30-G

BZT52B33-G

BZT52B36-G

BZT52B39-G

BZT52B43-G

BZT52B47-G

BZT52B51-G

BZT52B56-G

BZT52B62-G

BZT52B68-G

BZT52B75-G

V1

V2

V3

V4

V5

V6

V7

V8

V9

VA

VB

VC

VD

VE

VF

VG

VH

VI

2.35

2.65

2.94

3.23

3.53

3.82

4.21

4.61

5

2.4

2.7

3.0

3.3

3.6

3.9

4.3

4.7

5.1

5.6

6.2

6.8

7.5

8.2

9.1

10

11

12

13

15

16

18

20

22

24

27

30

33

36

39

43

47

51

56

62

68

75

2.45

2.75

3.06

3.37

3.67

3.98

4.39

4.79

5.2

5

1

-

100

85

600

-9 to -4

-

113

98

92

85

77

71

64

56

50

45

41

37

34

30

28

25

23

21

19

17

15

14

13

11

10

9

-

134

118

109

100

92

84

76

67

59

54

49

44

40

36

33

30

28

25

23

20

18

17

16

13

12

10

9

100 75 (< 83)

100 80 (< 95)

100 70 (< 78)

< 500

< 480

< 400

< 200

< 150

< 50

5

-9 to -3

5

-8 to -3

5

-8 to -3

5

-7 to -3

5

-6 to -1

5

-5 to +2

5

> 0.8 100 30 (< 60)

-3 to +4

5.49

6.08

6.66

7.35

8.04

8.92

9.8

5.71

6.32

6.94

7.65

8.36

9.28

10.2

11.2

12.2

13.3

15.3

16.3

18.4

20.4

22.4

24.5

27.5

30.6

33.7

36.7

39.8

43.9

47.9

52

5

> 1

> 2

> 3

> 5

> 6

> 7

100 10 (< 40)

100 4.8 (< 10)

-2 to +6

5

-1 to +7

5

100

4.5 (< 8)

4 (< 7)

+2 to +7

+3 to +7

+4 to +7

+5 to +8

+5 to +9

+6 to +9

+7 to +9

+8 to +9.5

+8 to +10

+10 to +12

5

4.5 (< 7)

< 50

5

100 4.8 (< 10)

< 50

5

> 7.5 100 5.2 (< 15)

< 70

10.8

11.8

12.7

14.7

15.7

17.6

19.6

21.6

23.5

26.5

29.4

32.3

35.3

38.2

42.1

46.1

50

5

> 8.5 100

> 9 100

> 10 100

6 (< 20)

7 (< 20)

9 (< 25)

< 70

5

< 90

VK

VL

VM

VN

VO

VP

VR

VS

VT

VU

VW

VX

VY

VZ

U1

U2

U3

U4

U5

5

< 110

< 170

< 220

< 250

< 300

< 700

< 750

5

> 11 100 11 (< 30)

> 12 100 13 (< 40)

> 14 100 18 (< 50)

> 15 100 20 (< 50)

> 17 100 25 (< 55)

> 18 100 28 (< 80)

> 20 100 30 (< 80)

> 22.5 100 35 (< 80)

> 25 100 40 (< 80)

> 27 100 40 (< 90)

> 29 100 50 (< 90)

> 32 100 60 (< 100)

> 35 100 70 (< 100)

> 38 100 70 (< 100)

5

8

5

8

9

5

7

8

5

6

7

5

6

5

6

54.9

60.8

66.6

73.5

57.1

63.2

69.4

76.5

2.5

-

100

< 135 ⁽²⁾< 1000 ⁽³⁾typ. +10 ⁽²⁾

< 150 ⁽²⁾< 1000 ⁽³⁾typ. +10 (²⁾

< 200 ⁽²⁾< 1000 ⁽³⁾typ. +10 ⁽²⁾

-

100 < 250 ⁽²⁾⁾< 1500 ⁽³⁾typ. +10 ⁽²⁾

-

Notes

•

I_ZT1= 5 mA, I_ZT2= 1 mA

Measured with pulses t_p= 5 ms

I_ZT1= 2.5 mA

(1)

(2)

(3)

(4)

I_ZT2= 0.5 mA

Valid provided that electrodes are kept at ambient temperature

Rev. 1.3, 22-Feb-18

Document Number: 83340

3

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BZT52-G-Series

Vishay Semiconductors

www.vishay.com

TYPICAL CHARACTERISTICS (T_amb= 25 °C, unless otherwise specified)

mA

10³

Ω

100

T_J= 25 °C

10²

10

5

4

I_F

3

2

33

r_zj

T_J= 100 °C

27

22

1

10^-1

10^-2

10

18

15

T_J= 25 °C

5

4

12

10^-3

10^-4

10^-5

3

10

2

6.8/8.2

6.2

1

0

0.2

0.4

0.6

0.8

1V

0.1

2

5

1

2

5

10

I_Z

2

5 100 mA

18119

V_F

18114

Fig. 1 - Forward Characteristics

Fig. 4 - Dynamic Resistance vs. Zener Current

Ω

mW

500

10³

T_j= 25 °C

7

5

4

400

300

200

100

0

R_zj

3

2

47 + 51

43

P_tot

39

36

10²

7

5

4

3

2

10

0.1

2

3

4

5

1

2

3

4

5

10

mA

0

100

200 °C

18120

18888

I_Z

T_amb

Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature

Fig. 5 - Dynamic Resistance vs. Zener Current

Ω

1000

Ω

10³

T_J= 25 °C

ΔV_Z

5

4

3

5

4

3

R_zth= R_thAx V_Zx

Δ

T_j

2

R_zth

r_zj

10²

100

5

4

3

5

4

3

2

10

5

4

3

10

5

4

3

2.7

3.6

4.7

5.1

negative

positive

2

5.6

1

2

3

4

5

10

2

3

4

5

100 V

0.1

18117

2

5

1

2

5

10

2

5 100 mA

18121

V_Zat I_Z= 5 mA

I_Z

Fig. 3 - Dynamic Resistance vs. Zener Current

Fig. 6 - Thermal Differential Resistance vs. Zener Voltage

Rev. 1.3, 22-Feb-18

Document Number: 83340

4

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BZT52-G-Series

Vishay Semiconductors

www.vishay.com

Ω

100

mV/°C

100

I_Z= 5 mA

7

5

4

ΔV_Z

80

60

R_zj

3

2

Δ

T_j

10

7

40

20

0

5

4

3

2

T = 25 °C

I_Z^j= 5 mA

1

2

3

4

5

10

2

3

4

5

100 V

0

20

40

60

80

100 V

18122

V_Z

V_Zat I_Z= 2 mA

18136

Fig. 7 - Dynamic Resistance vs. Zener Voltage

Fig. 10 - Temperature Dependence of Zener Voltage vs.

Zener Voltage

mV/°C

25

V

9

20

8

ΔV_Z

V

at I = 5 mA

Z

5 mA

1 mA

20 mA

Z

7

6

I_Z

=

Δ

T_j

15

10

ΔV

51

Z

5

43

36

4

3

5

2

1

0

I

= 5 mA

Z

- 5

- 1

0

20

40

60

80

100

T

120 140 °C

1

2

3

4

5

10

2

3

4

5

100 V

18158

j

18135

V_Zat I_Z= 5 mA

≥

V

27 V, I = 2 mA

Fig. 8 - Temperature Dependence of Zener Voltage vs.

Fig. 11 - Change of Zener Voltage vs. Junction Temperature

Zener Voltage

V

0.8

V

1.6

25

15

0.7

V_Zat I_Z= 5 mA

ΔV = r

Zth

x I

Z

10

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0

I

= 5 mA

Z

0.6

0.5

0.4

V

>= 56 V; I = 2.5 mA

Z

ΔV_Z

ΔV

Z

8

7

0.3

0.2

0.1

6.2

5.9

5.6

5.1

0

- 1

- 0.2

- 0.4

4.7

3.6

- 0.2

1

10

100 V

V

at I = 5 mA

Z

100 120 140 C

T_j

Z

0

20 40 60 80

18159

18124

Fig. 9 - Change of Zener Voltage vs. Junction Temperature

Fig. 12 - Change of Zener Voltage from Turn-on up to the Point of

Thermal Equilibrium vs. Zener Voltage

Rev. 1.3, 22-Feb-18

Document Number: 83340

5

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BZT52-G-Series

Vishay Semiconductors

www.vishay.com

V

5

mA

50

V = r_zthx I_Z

T = 25 °C

j

Δ

3.9

5.6

Z

2.7

6.8

3.3 4.7

4

3

2

40

8.2

l_Z

ΔV_Z

30

20

I_Z= 5 mA

Test

1

current

I_Z5 mA

10

0

I_Z= 2.5 mA

0

20

40

60

80

100 V

0

1

2

3

4

5

6

7

8

9

10 V

18160

V_Zat I_Z= 5 mA

V

18111

Z

Fig. 13 - Change of Zener Voltage from Turn-on up to the Point of

Fig. 14 - Breakdown Characteristics

Thermal Equilibrium vs. Zener Voltage

mA

30

10

12

T = 25 °C

j

l

Z

15

20

18

22

27

Test

10

0

current

33

36

I

5 mA

Z

0

10

20

30

40 V

18112

V

Z

Fig. 15 - Breakdown Characteristics

18157

Fig. 16 - Breakdown Characteristics

Rev. 1.3, 22-Feb-18

Document Number: 83340

6

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BZT52-G-Series

Vishay Semiconductors

www.vishay.com

PACKAGE DIMENSIONS in millimeters (inches): SOD-123

0.45 (0.018)

0.25 (0.010)

0.5 (0.020) ref.

Cathode bar

Mounting Pad Layout

2.85 (0.112)

2.55 (0.100)

0.85 (0.033)

3.85 (0.152)

3.55 (0.140)

2.5 (0.098)

Rev. 4 - Date: 24. Sep. 2009

Document no.: S8-V-3910.01-001 (4)

17432

Rev. 1.3, 22-Feb-18

Document Number: 83340

7

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Revision: 09-Jul-2021

Document Number: 91000

1

型号	制造商	描述	价格	文档
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BZT52B3V0-V-G08	VISHAY	DIODE 3 V, 0.41 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, GREEN PACKAGE-2, Voltage Regulator Diode	获取价格
BZT52B3V0-V-G18	VISHAY	DIODE 3 V, 0.41 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, GREEN PACKAGE-2, Voltage Regulator Diode	获取价格
BZT52B3V0BS	MCC	400 mW Zener Diode 3.0 to 51 Volts	获取价格
BZT52B3V0BS	YANGJIE	SOD-323	获取价格
BZT52B3V0F2	YANGJIE	Zener Diode, 3V V(Z), 2.67%, 0.5W, Silicon, Unidirectional,	获取价格
BZT52B3V0JS	MCC	200 mW Zener Diode 3.0 to 75 Volts	获取价格
BZT52B3V0L	BL Galaxy Electrical	Zener Diode	获取价格

BZT52B3V0-G3-18

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