GP02-25/70
更新时间：2025-05-23 03:17:35
品牌：VISHAY
描述：Rectifier Diode, 1 Element, 0.25A, 2500V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
概述
数据手册GP02-25/70 概述
Rectifier Diode, 1 Element, 0.25A, 2500V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
GP02-25/70 数据手册
通过下载GP02-25/70数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载GP02-20 thru GP02-40
Vishay General Semiconductor
High Voltage Glass Passivated Junction Rectifierr
Major Ratings and Characteristics
®
IF(AV)
VRRM
IFSM
IR
0.25 A
1000 V to 4000 V
15 A
5.0 µA
*
VF
3.0 V
d
e
t
n
e
Tj max.
175 °C
t
a
P
* Glass-plastic encapsulation
technique is covered by
Patent No. 3,996,602,
DO-204AL (DO-41)
brazed-lead assembly
by Patent No. 3,930,306
Features
Mechanical Data
• Superectifier structure for High Reliability
application
Case: DO-204AL, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
• Cavity-free glass-passivated junction
• Low leakage current
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Solder Dip 260 °C, 40 seconds
Polarity: Color band denotes cathode end
Typical Applications
For use in rectification of high voltage power supplies,
inverters, converters and freewheeling diodes appli-
cation
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter
Symbol
VRRM
GP02-20 GP02-25 GP02-30 GP02-35 GP02-40
Unit
V
Maximum repetitive peak reverse voltage
2000
1400
2000
2500
1750
2500
3000
2100
3000
0.25
3500
2450
3500
4000
2800
4000
Maximum RMS Voltage
VRMS
VDC
V
V
A
Maximum DC blocking voltage
Maximum average forward rectified current 0.375"
(9.5 mm) lead length at TA = 55 °C
IF(AV)
Peak forward surge current 8.3 ms single half sine-
wave superimposed on rated load
IFSM
15
A
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
Document Number 88635
31-Aug-05
www.vishay.com
1
GP02-20 thru GP02-40
Vishay General Semiconductor
Electrical Characteristics
(TA = 25 °C unless otherwise noted)
Parameter
Maximum
Test condition
at 1.0 A
Symbol
VF
GP02-20 GP02-25 GP02-30 GP02-35 GP02-40
3.0
Unit
V
instantaneous forward
voltage
Maximum DC reverse
current at rated DC
blocking voltage
T
A = 25 °C
IR
5.0
50
µA
TA = 100 °C
Typical reverse
recovery time
at IF = 0.5 A, IR = 1.0 A,
trr
2.0
3.0
µs
pF
Irr = 0.25 A
Typical junction
capacitance
at 4.0 V, 1 MHz
CJ
Thermal Characteristics
(TA = 25 °C unless otherwise noted)
Parameter
Typical thermal resistance(1)
Notes:
Symbol
RθJA
GP02-20 GP02-25 GP02-30 GP02-35 GP02-40
130
Unit
°C/W
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted
* JEDEC registered values
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
0.25
0.2
15
10
5.0
0
TJ = TJ max.
8.3 ms Single Half Sine-Wave
60 Hz
Resistive or
Inductive Load
0.15
0.1
0.05
0.375” (9.5mm lead length)
0
0
25
50
75
100
125
150
175
1
10
100
Ambient Temperature, °C
Number of Cycles at 60 Hz
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-repetitive Peak Forward Surge Current
www.vishay.com
Document Number 88635
31-Aug-05
2
GP02-20 thru GP02-40
Vishay General Semiconductor
10
1
6.0
TJ = 25 °C
f = 1.0 MHz
Vsig = 50mVp-p
5.0
4.0
3.0
2.0
1.0
0
0.1
TJ = 25 °C
Pulse Width = 300 µs
1% Duty Cycle
0.01
0.1
1
10
100
1.0
2.0
3.0
4.0
5.0
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
10
TJ
= 100 °C
1
0.1
TJ
= 25 °C
40
0.01
0
20
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics
Package outline dimensions in inches (millimeters)
DO-204AL (DO-41)
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
Document Number 88635
31-Aug-05
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
GP02-25/70 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| GP02-25/74 | VISHAY | Rectifier Diode, 1 Element, 0.25A, 2500V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN | 获取价格 |
|
| GP02-25HE3/53 | VISHAY | 工作温度:-65°C ~ 175°C;最小工作结温:-65°C;最大工作结温（Tj）: 175°C;元器件封装:DO-41; | 获取价格 |
|
| GP02-25HE3/54 | VISHAY | STD RECOVERY RECTFR 2.5KV 0.25A 2PIN DO-41 - Tape and Reel | 获取价格 |
|
| GP02-25HE3/73 | VISHAY | STD RECOVERY RECTFR 2.5KV 0.25A 2PIN DO-204AL AMMO - Ammo Pack | 获取价格 |
|
| GP02-25HM3/54 | VISHAY | DIODE GEN PURP 2.5KV 250MA DO204 | 获取价格 |
|
| GP02-25HM3/73 | VISHAY | 工作温度:-65°C ~ 175°C;最小工作结温:-65°C;最大工作结温（Tj）: 175°C;元器件封装:DO-41; | 获取价格 |
|
| GP02-30 | VISHAY | HIGH VOLTAGE GLASS PASSIVATED JUNCTION RECTIFIER | 获取价格 |
|
| GP02-30 | TAITRON | 0.25A Sintered Glass Passivated Rectifier | 获取价格 |
|
| GP02-30 | RFE | LEADED (THRU-HOLE) High Voltage Rectifiers | 获取价格 |
|
| GP02-30 | FCI | HIGH VOLTAGE MINIATURE PLASTIC RECTIFIERS | 获取价格 |
|
GP02-25/70 相关文章
基于 T2L 的 HIPERFACE DSL：工业编码器通信的新选择
- 2025-05-23
- 22
2025 年，边缘 AI 芯片架构王者之争的揭晓？
- 2025-05-23
- 16
小米玄戒 O1 登场:突破芯片极限，展现强劲实力
- 2025-05-23
- 39
RISC-V 架构来袭，服务器 CPU 芯片带来多元化选择
- 2025-05-23
- 14
