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SI7421DN

更新时间：2025-06-28 10:19:23
品牌：VISHAY
描述：P-Channel 30-V (D-S) MOSFET

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SI7421DN 概述

P-Channel 30-V (D-S) MOSFET P通道30 -V （D -S ）的MOSFET

SI7421DN 数据手册

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Si7421DN  
Vishay Siliconix  
New Product  
P-Channel 30-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
D New PowerPAKr Package  
− Low Thermal Resistance, RthJC  
− Low 1.07-mm Profile  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.025 @ V = −10 V  
−9.8  
−7.4  
GS  
−30  
0.043 @ V = −4.5  
V
GS  
APPLICATIONS  
D Battery Switch  
PowerPAK 1212-8  
S
S
3.30 mm  
3.30 mm  
1
S
2
S
3
G
4
G
D
8
D
7
D
6
D
D
5
P-Channel MOSFET  
Bottom View  
Ordering Information: Si7421DN-T1—E3  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
−30  
DS  
V
V
GS  
"20  
T
= 25_C  
= 85_C  
−6.4  
−4.6  
−9.8  
−7  
A
a
Continuous Drain Current (T = 150_C)  
I
D
J
T
A
A
Pulsed Drain Current  
I
DM  
−30  
a
continuous Source Current (Diode Conduction)  
I
−3  
3.6  
1.9  
−1.3  
1.5  
S
T
= 25_C  
= 85_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
0.8  
Operating Junction and Storage Temperature Range  
T , T  
−55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
28  
65  
35  
81  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJC  
_C/W  
Maximum Junction-to-Case  
2.9  
3.8  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 72416  
S-32411—Rev. B, 24-Nov-03  
www.vishay.com  
1
Si7421DN  
Vishay Siliconix  
New Product  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= V , I = −250 mA  
−1  
−3  
V
GS(th)  
DS  
GS  
D
I
V
= 0 V, V = "20 V  
"100  
nA  
GSS  
DS  
GS  
V
= −30 V, V = 0 V  
−1  
−5  
DS  
GS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
DS  
= −30 V, V = 0 V, T = 85_C  
GS  
J
a
On-State Drain Current  
I
V
DS  
v −5 V, V = −10 V  
−30  
A
D(on)  
GS  
V
= −10 V, I = −9.8 A  
0.020  
0.034  
0.025  
0.043  
GS  
D
a
Drain-Source On-State Resistance  
r
W
DS(on)  
V
= −4.5 V, I = −7.4 A  
GS  
D
a
Forward Transconductance  
g
20  
S
V
V
= −15 V, I = −9.8 A  
fs  
DS  
D
a
Diode Forward Voltage  
V
SD  
I
= −3.0 A, V = 0 V  
−0.8  
−1.2  
S
GS  
Dynamicb  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Q
26.2  
4.5  
6
40  
g
Q
Q
V
DS  
= −15 V, V = −10 V, I = −9.8 A  
nC  
gs  
gd  
GS  
D
f = 1 MHz  
Gate Resistance  
R
g
6.5  
W
Turn-On Delay Time  
Rise Time  
t
10  
13  
57  
42  
30  
15  
20  
90  
65  
50  
d(on)  
t
r
V
= −15 V, R = 15 W  
L
GEN G  
DD  
I
D
^ −1 A, V  
= −10 V, R = 6 W  
Turn-Off Delay Time  
Fall Time  
t
d(off)  
ns  
t
f
Source-Drain Reverse Recovery Time  
t
rr  
I = −3.0 A, di/dt = 100 A/ms  
F
Notes  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
30  
30  
25  
20  
15  
10  
5
V
GS  
= 10 thru 4 V  
25  
20  
15  
10  
5
3 V  
T
= 125_C  
C
25_C  
−55_C  
0
0
0
1
2
3
4
5
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
V
DS  
− Drain-to-Source Voltage (V)  
V
GS  
− Gate-to-Source Voltage (V)  
Document Number: 72416  
S-32411—Rev. B, 24-Nov-03  
www.vishay.com  
2
Si7421DN  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistance vs. Drain Current  
Capacitance  
0.06  
2000  
1600  
1200  
800  
400  
0
0.05  
0.04  
C
iss  
V
GS  
= 4.5 V  
0.03  
0.02  
0.01  
0.00  
V
GS  
= 10 V  
C
oss  
C
rss  
0
5
10  
15  
20  
25  
30  
0
5
10  
15  
20  
25  
30  
I
D
− Drain Current (A)  
V
DS  
− Drain-to-Source Voltage (V)  
Gate Charge  
On-Resistance vs. Junction Temperature  
10  
8
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
V
D
= 15 V  
V
GS  
= 10 V  
DS  
I
= 9.8  
A
I = 9.8 A  
D
6
4
2
0
0
5
10  
15  
20  
25  
30  
−50 −25  
0
25  
50  
75  
100 125 150  
Q
− Total Gate Charge (nC)  
T
− Junction Temperature (_C)  
g
J
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.10  
0.08  
0.06  
0.04  
0.02  
0.00  
30  
T
= 150_C  
J
I
D
= 9.8 A  
10  
I
D
= 2.6 A  
T
= 25_C  
J
1
0.0  
0
2
4
6
8
10  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
V
SD  
− Source-to-Drain Voltage (V)  
V
GS  
− Gate-to-Source Voltage (V)  
Document Number: 72416  
S-32411—Rev. B, 24-Nov-03  
www.vishay.com  
3
Si7421DN  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Threshold Voltage  
Single Pulse Power, Juncion-To-Ambient  
0.6  
50  
40  
30  
0.5  
I
D
= 250 mA  
0.4  
0.3  
0.2  
0.1  
20  
10  
−0.0  
−0.1  
−0.2  
−0.3  
0
−50 −25  
0
25  
50  
75  
100 125 150  
0.01  
0.1  
1
10  
100  
600  
T
− Temperature (_C)  
Time (sec)  
J
Safe Operating Area  
100  
r
Limited  
DS(on)  
I
Limited  
DM  
10  
1
P(t) = 0.001  
P(t) = 0.01  
I
D(on)  
Limited  
P(t) = 0.1  
P(t) = 1  
T
A
= 25_C  
P(t) = 10  
dc  
0.1  
Single Pulse  
BV  
DSS  
Limited  
10  
0.01  
0.1  
1
100  
V
DS  
− Drain-to-Source Voltage (V)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
1. Duty Cycle, D =  
2
2. Per Unit Base = R  
= 65_C/W  
thJA  
(t)  
3. T − T = P Z  
DM thJA  
JM  
A
Single Pulse  
4. Surface Mounted  
0.01  
−4  
−3  
−2  
−1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Document Number: 72416  
S-32411—Rev. B, 24-Nov-03  
www.vishay.com  
4
Si7421DN  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
−4  
−3  
−2  
−1  
10  
10  
10  
Square Wave Pulse Duration (sec)  
10  
1
Document Number: 72416  
S-32411—Rev. B, 24-Nov-03  
www.vishay.com  
5

SI7421DN 相关器件

型号 制造商 描述 价格 文档
SI7421DN-T1 VISHAY TRANSISTOR 6.4 A, 30 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET, 1212-8, POWERPAK-8, FET General Purpose Power 获取价格
SI7421DN-T1-E3 VISHAY P-Channel 30-V (D-S) MOSFET 获取价格
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SI7423DN VISHAY P-Channel 30-V (D-S) MOSFET 获取价格
SI7423DN-T1-E3 VISHAY 元器件封装:PowerPAK® 1212-8; 获取价格
SI7423DN-T1-GE3 VISHAY P-CHANNEL 30-V (D-S) MOSFET 获取价格
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SI7425DN-T1-E3 VISHAY P-Channel 12-V (D-S) MOSFET 获取价格
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SI742DN VISHAY P-Channel 30-V (D-S) MOSFET 获取价格

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