概述
数据手册SI7421DN 概述
P-Channel 30-V (D-S) MOSFET P通道30 -V （D -S ）的MOSFET
SI7421DN 数据手册
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PDF下载Si7421DN
Vishay Siliconix
New Product
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
D New PowerPAKr Package
− Low Thermal Resistance, RthJC
− Low 1.07-mm Profile
VDS (V)
rDS(on) (W)
ID (A)
0.025 @ V = −10 V
−9.8
−7.4
GS
−30
0.043 @ V = −4.5
V
GS
APPLICATIONS
D Battery Switch
PowerPAK 1212-8
S
S
3.30 mm
3.30 mm
1
S
2
S
3
G
4
G
D
8
D
7
D
6
D
D
5
P-Channel MOSFET
Bottom View
Ordering Information: Si7421DN-T1—E3
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
−30
DS
V
V
GS
"20
T
= 25_C
= 85_C
−6.4
−4.6
−9.8
−7
A
a
Continuous Drain Current (T = 150_C)
I
D
J
T
A
A
Pulsed Drain Current
I
DM
−30
a
continuous Source Current (Diode Conduction)
I
−3
3.6
1.9
−1.3
1.5
S
T
= 25_C
= 85_C
A
a
Maximum Power Dissipation
P
W
D
T
A
0.8
Operating Junction and Storage Temperature Range
T , T
−55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
28
65
35
81
a
Maximum Junction-to-Ambient
R
thJA
R
thJC
_C/W
Maximum Junction-to-Case
2.9
3.8
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72416
S-32411—Rev. B, 24-Nov-03
www.vishay.com
1
Si7421DN
Vishay Siliconix
New Product
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = −250 mA
−1
−3
V
GS(th)
DS
GS
D
I
V
= 0 V, V = "20 V
"100
nA
GSS
DS
GS
V
= −30 V, V = 0 V
−1
−5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= −30 V, V = 0 V, T = 85_C
GS
J
a
On-State Drain Current
I
V
DS
v −5 V, V = −10 V
−30
A
D(on)
GS
V
= −10 V, I = −9.8 A
0.020
0.034
0.025
0.043
GS
D
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= −4.5 V, I = −7.4 A
GS
D
a
Forward Transconductance
g
20
S
V
V
= −15 V, I = −9.8 A
fs
DS
D
a
Diode Forward Voltage
V
SD
I
= −3.0 A, V = 0 V
−0.8
−1.2
S
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
26.2
4.5
6
40
g
Q
Q
V
DS
= −15 V, V = −10 V, I = −9.8 A
nC
gs
gd
GS
D
f = 1 MHz
Gate Resistance
R
g
6.5
W
Turn-On Delay Time
Rise Time
t
10
13
57
42
30
15
20
90
65
50
d(on)
t
r
V
= −15 V, R = 15 W
L
GEN G
DD
I
D
^ −1 A, V
= −10 V, R = 6 W
Turn-Off Delay Time
Fall Time
t
d(off)
ns
t
f
Source-Drain Reverse Recovery Time
t
rr
I = −3.0 A, di/dt = 100 A/ms
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
30
30
25
20
15
10
5
V
GS
= 10 thru 4 V
25
20
15
10
5
3 V
T
= 125_C
C
25_C
−55_C
0
0
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 72416
S-32411—Rev. B, 24-Nov-03
www.vishay.com
2
Si7421DN
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.06
2000
1600
1200
800
400
0
0.05
0.04
C
iss
V
GS
= 4.5 V
0.03
0.02
0.01
0.00
V
GS
= 10 V
C
oss
C
rss
0
5
10
15
20
25
30
0
5
10
15
20
25
30
I
D
− Drain Current (A)
V
DS
− Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
V
D
= 15 V
V
GS
= 10 V
DS
I
= 9.8
A
I = 9.8 A
D
6
4
2
0
0
5
10
15
20
25
30
−50 −25
0
25
50
75
100 125 150
Q
− Total Gate Charge (nC)
T
− Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
0.06
0.04
0.02
0.00
30
T
= 150_C
J
I
D
= 9.8 A
10
I
D
= 2.6 A
T
= 25_C
J
1
0.0
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
SD
− Source-to-Drain Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 72416
S-32411—Rev. B, 24-Nov-03
www.vishay.com
3
Si7421DN
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Juncion-To-Ambient
0.6
50
40
30
0.5
I
D
= 250 mA
0.4
0.3
0.2
0.1
20
10
−0.0
−0.1
−0.2
−0.3
0
−50 −25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
600
T
− Temperature (_C)
Time (sec)
J
Safe Operating Area
100
r
Limited
DS(on)
I
Limited
DM
10
1
P(t) = 0.001
P(t) = 0.01
I
D(on)
Limited
P(t) = 0.1
P(t) = 1
T
A
= 25_C
P(t) = 10
dc
0.1
Single Pulse
BV
DSS
Limited
10
0.01
0.1
1
100
V
DS
− Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 65_C/W
thJA
(t)
3. T − T = P Z
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 72416
S-32411—Rev. B, 24-Nov-03
www.vishay.com
4
Si7421DN
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
Square Wave Pulse Duration (sec)
10
1
Document Number: 72416
S-32411—Rev. B, 24-Nov-03
www.vishay.com
5
SI7421DN 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| SI7421DN-T1 | VISHAY | TRANSISTOR 6.4 A, 30 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET, 1212-8, POWERPAK-8, FET General Purpose Power | 获取价格 |
|
| SI7421DN-T1-E3 | VISHAY | P-Channel 30-V (D-S) MOSFET | 获取价格 |
|
| SI7421DN-T1-GE3 | VISHAY | P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel | 获取价格 |
|
| SI7423DN | VISHAY | P-Channel 30-V (D-S) MOSFET | 获取价格 |
|
| SI7423DN-T1-GE3 | VISHAY | P-CHANNEL 30-V (D-S) MOSFET | 获取价格 |
|
| SI7425DN | VISHAY | P-Channel 12-V (D-S) MOSFET | 获取价格 |
|
| SI7425DN-T1-E3 | VISHAY | P-Channel 12-V (D-S) MOSFET | 获取价格 |
|
| SI7425DN-T1-GE3 | VISHAY | P-CHANNEL 12-V (D-S) MOSFET - Tape and Reel | 获取价格 |
|
| SI742DN | VISHAY | P-Channel 30-V (D-S) MOSFET | 获取价格 |
|
| SI7430DP | VISHAY | N-Channel 150-V (D-S) WFET | 获取价格 |
|
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