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SI7446DP

更新时间：2025-01-16 02:17:26

品牌：VISHAY

描述：SPICE Device Model Si7446DP

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规格参数
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SI7446DP 概述

SPICE Device Model Si7446DP SPICE器件模型Si7446DP 其他晶体管

SI7446DP 规格参数

是否无铅：	含铅	生命周期：	Transferred
零件包装代码：	SOT	包装说明：	,
针数：	8	Reach Compliance Code：	unknown
风险等级：	5.59	Is Samacsys：	N
Base Number Matches：	1

SI7446DP 数据手册

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SPICE Device Model Si7446DP

Vishay Siliconix

N-Channel 30-V (D-S), Fast Switching MOSFET

CHARACTERISTICS

• N-Channel Vertical DMOS

• Macro Model (Subcircuit Model)

• Level 3 MOS

• Apply for both Linear and Switching Application

• Accurate over the −55 to 125°C Temperature Range

• Model the Gate Charge, Transient, and Diode Reverse Recovery

Characteristics

DESCRIPTION

The attached spice model describes the typical electrical

characteristics of the n-channel vertical DMOS. The subcircuit

model is extracted and optimized over the −55 to 125°C

temperature ranges under the pulsed 0 to 5V gate drive. The

saturated output impedance is best fit at the gate bias near the

threshold voltage.

A novel gate-to-drain feedback capacitance network is used to model

the gate charge characteristics while avoiding convergence difficulties

of the switched C_gdmodel. All model parameter values are optimized

to provide a best fit to the measured electrical data and are not

intended as an exact physical interpretation of the device.

SUBCIRCUIT MODEL SCHEMATIC

This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate

data sheet of the same number for guaranteed specification limits.

Document Number: 71720

24-May-04

www.vishay.com

SPICE Device Model Si7446DP

Vishay Siliconix

SPECIFICATIONS (T_J= 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Conditions

Typical

Unit

Static

Gate Threshold Voltage

On-State Drain Current^a

V_GS(th)

I_D(on)

1.89

759

_DS= V_GS, I_D= 250 µA

_DS≥ 5 V, V_GS= 10 V

V_GS= 10 V, I_D= 19 A

V_GS= 4.5 V, I_D= 17 A

V_DS= 15 V, I_D= 19 A

I_S= 4.3 A, V_GS= 0 V

0.0061

0.0086

Drain-Source On-State Resistance^a

r_DS(on)

Ω

Forward Transconductance^a

Diode Forward Voltage^a

g_fs

V_SD

0.83

Dynamic^b

Total Gate Charge^b

Gate-Source Charge^b

Gate-Drain Charge^b

Turn-On Delay Time^b

Rise Time^b

Turn-Off Delay Time^b

Fall Time^b

Q_g

Q_gs

Q_gd

t_d(on)

t_r

108

_DS= 15 V, V_GS= 5 V, I_D= 19 A

V_DD= 15 V, R_L= 15 Ω

_D≅ 1A, V_GEN= 10 V, R_G= 6 Ω

t_d(off)

t_f

Source-Drain Reverse Recovery Time

t_rr

I_F= 2.3 A, di/dt = 100 A/µs

Notes

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

www.vishay.com

Document Number: 71720

24-May-04

SPICE Device Model Si7446DP

Vishay Siliconix

COMPARISON OF MODEL WITH MEASURED DATA (T_J=25°C UNLESS OTHERWISE NOTED)

Document Number: 71720

24-May-04

www.vishay.com

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