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SI7846DP-E3

更新时间：2025-04-27 15:08:26
品牌：VISHAY
描述：TRANSISTOR 4 A, 150 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power

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SI7846DP-E3 概述

TRANSISTOR 4 A, 150 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power 功率场效应晶体管

SI7846DP-E3 规格参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SOT
包装说明：SMALL OUTLINE, R-XDSO-C5针数：8
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.74外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：150 V
最大漏极电流 (ID)：4 A最大漏源导通电阻：0.05 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-XDSO-C5
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：5
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：50 A
认证状态：Not Qualified表面贴装：YES
端子面层：MATTE TIN端子形式：C BEND
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

SI7846DP-E3 数据手册

通过下载SI7846DP-E3数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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Si7846DP  
Vishay Siliconix  
New Product  
N-Channel 150-V (D-S) MOSFET  
FEATURES  
D TrenchFETr Power MOSFETS  
D New Low Thermal Resistance PowerPAKt  
Package with Low 1.07-mm Profile  
PRODUCT SUMMARY  
D PWM Optimized for Fast Switching  
APPLICATIONS  
VDS (V)  
rDS(on) (W)  
ID (A)  
150  
0.050 @ V = 10 V  
GS  
6.7  
D Primary Side Switch for High Density DC/DC  
D Telecom/Server 48-V DC/DC  
D Industrial and 42-V Automotive  
PowerPAKt SO-8  
D
S
6.15 mm  
5.15 mm  
1
S
2
S
3
G
4
G
D
8
D
7
D
6
S
D
5
N-Channel MOSFET  
Bottom View  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
150  
DS  
GS  
V
V
"20  
T
= 25_C  
= 70_C  
6.7  
5.4  
4.0  
3.3  
A
a
Continuous Drain Current (T = 150_C)  
I
D
J
T
A
Pulsed Drain Current  
I
50  
25  
A
DM  
Avalanch Current  
L = 0.1 mH  
I
AS  
a
Continuous Source Current (Diode Conduction)  
I
4.3  
5.2  
3.3  
1.6  
1.9  
1.2  
S
T
= 25_C  
= 70_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
–55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
19  
52  
24  
65  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJF  
_C/W  
Maximum Junction-to-Foot (Drain)  
1.5  
1.8  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 71442  
S-03468—Rev. A, 03-Apr-01  
www.vishay.com  
1
Si7846DP  
New Product  
Vishay Siliconix  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= V , I = 250 mA  
2.0  
V
GS(th)  
DS  
GS  
D
V
DS  
= 0 V, V = "20 V  
GS  
I
"100  
nA  
GSS  
V
= 120 V, V = 0 V  
1
5
DS  
GS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
DS  
= 120 V, V = 0 V, T = 55_C  
GS  
J
a
On-State Drain Current  
I
50  
A
V
DS  
w 5 V, V = 10 V  
D(on)  
GS  
a
Drain-Source On-State Resistance  
r
0.041  
0.050  
1.1  
W
V
V
= 10 V, I = 5 A  
DS(on)  
GS  
D
a
Forward Transconductance  
g
fs  
= 15 V, I = 5 A  
18  
S
V
DS  
D
a
Diode Forward Voltage  
V
SD  
I
S
= 2.8 A, V = 0 V  
0.75  
GS  
Dynamicb  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Turn-On Delay Time  
Rise Time  
Q
30  
8.5  
8.5  
12  
36  
g
Q
Q
V
= 75 V, V = 10 V, I = 5 A  
nC  
ns  
gs  
gd  
DS  
GS  
D
t
18  
11  
33  
15  
d(on)  
t
r
7
V
DD  
= 75 V, R = 15 W  
L
I
D
^ 5 A, V  
= 10 V, R = 6 W  
GEN G  
Turn-Off Delay Time  
Fall Time  
t
22  
d(off)  
t
f
10  
Gate Resistance  
R
0.85  
40  
W
g
Source-Drain Reverse Recovery Time  
t
rr  
I
F
= 2.8 A, di/dt = 100 A/ms  
70  
ns  
Notes  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
50  
50  
40  
30  
20  
10  
0
V
GS  
= 10 thru 7 V  
6 V  
40  
30  
20  
10  
0
T
= 125_C  
C
25_C  
5 V  
–55_C  
3, 4 V  
0
2
4
6
8
10  
0
1
2
3
4
5
6
7
V
DS  
– Drain-to-Source Voltage (V)  
V
GS  
– Gate-to-Source Voltage (V)  
Document Number: 71442  
www.vishay.com  
S-03468—Rev. A, 03-Apr-01  
2
Si7846DP  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistance vs. Drain Current  
Capacitance  
3000  
2500  
2000  
1500  
1000  
500  
0.10  
0.08  
0.06  
C
iss  
V
GS  
= 10 V  
0.04  
0.02  
0.00  
C
rss  
C
oss  
0
0
10  
20  
30  
40  
50  
0
30  
60  
90  
120  
150  
I
D
– Drain Current (A)  
V
DS  
– Drain-to-Source Voltage (V)  
Gate Charge  
On-Resistance vs. Junction Temperature  
20  
16  
12  
8
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
V
= 75 V  
= 5 A  
V
= 10 V  
DS  
GS  
I
D
I = 5 A  
D
4
0
0
15  
Q
30  
45  
60  
–50 –25  
0
25  
50  
75  
100 125 150  
– Total Gate Charge (nC)  
T – Junction Temperature (_C)  
J
g
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.15  
0.12  
0.09  
0.06  
0.03  
0.00  
50  
10  
I
D
= 5 A  
T
= 150_C  
J
T
= 25_C  
J
1
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0
2
4
6
8
10  
V
SD  
– Source-to-Drain Voltage (V)  
V
GS  
– Gate-to-Source Voltage (V)  
Document Number: 71442  
www.vishay.com  
S-03468—Rev. A, 03-Apr-01  
3
Si7846DP  
New Product  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Threshold Voltage  
AvalancheCurrent vs. Time  
1.0  
100  
10  
0.5  
I
D
= 250 mA  
T = 25_C  
0.0  
–0.5  
–1.0  
–1.5  
T = 125_C  
1
0.1  
–5  
–4  
–3  
–2  
–1  
–50 –25  
0
25  
50  
75  
100 125 150  
10  
10  
10  
10  
10  
1
T
– Temperature (_C)  
Time (sec)  
J
Single Pulse Power, Juncion-To-Ambient  
100  
80  
60  
40  
20  
0
0.1  
0.001  
0.01  
1
10  
Time (sec)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 52_C/W  
thJA  
(t)  
3. T – T = P Z  
DM thJA  
JM  
A
Single Pulse  
4. Surface Mounted  
0.01  
–4  
–3  
–2  
–1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Document Number: 71442  
www.vishay.com  
S-03468—Rev. A, 03-Apr-01  
4
Si7846DP  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
–4  
–3  
–2  
–1  
10  
10  
10  
10  
1
10  
Square Wave Pulse Duration (sec)  
Document Number: 71442  
S-03468—Rev. A, 03-Apr-01  
www.vishay.com  
5

SI7846DP-E3 相关器件

型号 制造商 描述 价格 文档
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