SI7860ADP-T1-GE3
更新时间：2024-11-30 14:18:32
品牌：VISHAY
描述：TRANSISTOR POWER, FET, FET General Purpose Power
概述
规格参数
数据手册
替代型号SI7860ADP-T1-GE3 概述
TRANSISTOR POWER, FET, FET General Purpose Power MOS管 功率场效应晶体管
SI7860ADP-T1-GE3 规格参数
| 生命周期： | Obsolete | 包装说明： | SMALL OUTLINE, R-PDSO-F5 |
| Reach Compliance Code： | unknown | 风险等级： | 5.84 |
| 雪崩能效等级（Eas）： | 60 mJ | 外壳连接： | DRAIN |
| 配置： | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压： | 30 V |
| 最大漏极电流 (ID)： | 11 A | 最大漏源导通电阻： | 0.0095 Ω |
| FET 技术： | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码： | R-PDSO-F5 |
| 元件数量： | 1 | 端子数量： | 5 |
| 工作模式： | ENHANCEMENT MODE | 封装主体材料： | PLASTIC/EPOXY |
| 封装形状： | RECTANGULAR | 封装形式： | SMALL OUTLINE |
| 峰值回流温度（摄氏度）： | NOT SPECIFIED | 极性/信道类型： | N-CHANNEL |
| 最大脉冲漏极电流 (IDM)： | 50 A | 表面贴装： | YES |
| 端子形式： | FLAT | 端子位置： | DUAL |
| 处于峰值回流温度下的最长时间： | NOT SPECIFIED | 晶体管应用： | SWITCHING |
| 晶体管元件材料： | SILICON | Base Number Matches： | 1 |
SI7860ADP-T1-GE3 数据手册
通过下载SI7860ADP-T1-GE3数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载Si7860ADP
Vishay Siliconix
N-Channel Reduced Q , Fast Switching MOSFET
g
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
Available
VDS (V)
RDS(on) (Ω)
ID (A)
16
TrenchFET® Power MOSFET
PWM Optimized for High Efficiency
0.0095 at VGS = 10 V
0.0125 at VGS = 4.5 V
•
•
•
30
16
New Low Thermal Resistance PowerPAK®
Package with Low 1.07 mm Profile
•
100 % Rg Tested
PowerPAK SO-8
APPLICATIONS
•
Buck Converter
S
- High Side or Low Side
6.15 mm
5.15 mm
1
S
•
Synchronous Rectifier
- Secondary Rectifier
2
S
3
G
D
4
D
8
D
7
D
6
D
G
5
Bottom View
S
Ordering Information:
Si7860ADP-T1-E3 (Lead (Pb)-free)
Si7860ADP-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
10 s
Steady State
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
30
20
V
VGS
TA = 25 °C
TA = 70 °C
16
13
11
8
Continuous Drain Current (TJ = 150 °C)a
ID
IDM
IS
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Avalanche Current
50
A
4.1
1.5
IAS
EAS
35
60
L = 0.1 mH
TA = 25 °C
Single Pulse Avalanche Energy
mJ
W
4.8
3.1
1.8
1.1
Maximum Power Dissipationa
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b, c
TJ, Tstg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
21
Maximum
Unit
t ≤ 10 s
Steady State
Steady State
26
70
Maximum Junction-to-Ambient (MOSFET)a
Maximum Junction-to-Case (Drain)
RthJA
56
°C/W
RthJC
1.9
2.5
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72651
S09-0272-Rev. D, 16-Feb-09
www.vishay.com
1
Si7860ADP
Vishay Siliconix
MOSFET SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VGS(th)
IGSS
VDS = VGS, ID = 250 µA
Gate Threshold Voltage
Gate-Body Leakage
1.0
3.0
100
1
V
VDS = 0 V, VGS
=
20 V
nA
VDS = 30 V, VGS = 0 V
DS = 30 V, VGS = 0 V, TJ = 70 °C
VDS ≥ 5 V, VGS = 10 V
IDSS
ID(on)
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
5
40
VGS = 10 V, ID = 16 A
0.0079
0.0105
60
0.0095
0.0125
Drain-Source On-State Resistancea
RDS(on)
Ω
V
GS = 4.5 V, ID = 14 A
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
gfs
VDS = 15 V, ID = 16 A
IS = 3 A, VGS = 0 V
S
V
VSD
0.70
1.1
18
Qg
Qgs
Qgd
Rg
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
13
5
VDS = 15 V, VGS = 4.5 V, ID = 16 A
nC
4.0
1.7
18
12
46
19
40
0.5
3.2
27
18
70
30
70
Ω
td(on)
tr
td(off)
tf
VDD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
Turn-Off Delay Time
Fall Time
ns
trr
IF = 3 A, dI/dt = 100 A/µs
Source-Drain Reverse Recovery Time
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
40
30
20
10
0
50
40
30
20
10
0
V
= 10 thru 4 V
GS
T
= 125 °C
C
3 V
25 °C
2.0
- 55 °C
3.5
0.0
0.5
1.0
1.5
2.5
3.0
4.0
0
1
2
3
4
5
V
- Gate-to-Source Voltage (V)
V
- Drain-to-Source Voltage (V)
GS
DS
Output Characteristics
Transfer Characteristics
www.vishay.com
2
Document Number: 72651
S09-0272-Rev. D, 16-Feb-09
Si7860ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2500
2000
1500
1000
500
0.015
C
iss
0.012
V
= 4.5 V
GS
V
= 10 V
GS
0.009
0.006
0.003
0.000
C
oss
C
rss
0
0
6
12
18
24
30
0
10
20
30
40
50
V
- Drain-to-Source Voltage (V)
DS
I
D
- Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
6
5
4
3
2
1
0
2.00
1.75
1.50
1.25
1.00
0.75
0.50
V
I
= 15 V
= 16 A
DS
D
V
= 10 V
= 16 A
GS
I
D
0
4
8
12
16
20
- 50 - 25
0
J
25
50
75
100 125 150
T
- Junction Temperature (°C)
Q
g
- Total Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
0.040
0.032
0.024
0.016
0.008
0.000
60
10
T = 150 °C
J
T = 25 °C
J
I
D
= 16 A
1
0
2
4
6
8
10
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V
- Gate-to-Source Voltage (V)
GS
V
- Source-to-Drain Voltage (V)
SD
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72651
S09-0272-Rev. D, 16-Feb-09
www.vishay.com
3
Si7860ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.6
200
160
120
I
D
= 250 µA
0.3
0.0
-0.3
-0.6
-0.9
80
40
0
-50 -25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
J
- Temperature (°C)
Time (s)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
Limited by
R
DS(on)*
10
1 ms
10 ms
1
100 ms
1 s
10 s
0.1
T
= 25 °C
C
DC
Single Pulse
0.01
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V at which R is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 125 °C/W
thJA
(t)
3. T
- T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
www.vishay.com
4
Document Number: 72651
S09-0272-Rev. D, 16-Feb-09
Si7860ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72651.
Document Number: 72651
S09-0272-Rev. D, 16-Feb-09
www.vishay.com
5
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8, (Single/Dual)
L
H
E2
K
E4
W
1
1
2
3
4
Z
2
3
4
D
L1
E3
A1
Backside View of Single Pad
L
H
K
E2
E4
2
E1
E
Detail Z
1
2
3
4
D1
D2
Notes
1. Inch will govern.
E3
2
Dimensions exclusive of mold gate burrs.
Backside View of Dual Pad
3. Dimensions exclusive of mold flash and cutting burrs.
MILLIMETERS
INCHES
NOM.
0.041
DIM.
MIN.
NOM.
1.04
MAX.
1.12
0.05
0.51
0.33
5.26
5.00
3.91
1.68
MIN.
0.038
0
MAX.
0.044
0.002
0.020
0.013
0.207
0.197
0.154
0.066
A
0.97
A1
-
-
b
0.33
0.23
5.05
4.80
3.56
1.32
0.41
0.013
0.009
0.199
0.189
0.140
0.052
0.016
c
0.28
0.011
D
5.15
0.203
D1
4.90
0.193
D2
3.76
0.148
D3
1.50
0.059
D4
0.57 typ.
3.98 typ.
6.15
0.0225 typ.
0.157 typ.
0.242
D5
E
6.05
5.79
3.30
3.48
3.68
6.25
5.99
3.66
3.84
3.91
0.238
0.228
0.130
0.137
0.145
0.246
0.236
0.144
0.151
0.154
E1
5.89
0.232
E2 (for AL product)
3.48
0.137
E2 (for other product)
3.66
0.144
E3
3.78
0.149
E4 (for AL product)
0.58 typ.
0.75 typ.
1.27 BSC
1.45 typ.
1.27 typ.
-
0.023 typ.
0.030 typ.
0.050 BSC
0.057 typ.
0.050 typ.
-
E4 (for other product)
e
K (for AL product)
K (for other product)
K1
H
0.56
0.51
0.51
0.06
0°
-
0.022
0.020
0.020
0.002
0°
-
0.61
0.71
0.71
0.20
12°
0.024
0.028
0.028
0.008
12°
L
0.61
0.024
L1
0.13
0.005
-
-
W
M
0.15
0.25
0.36
0.006
0.010
0.014
0.125 typ.
0.005 typ.
ECN: C13-0702-Rev. K, 20-May-13
DWG: 5881
Revison: 20-May-13
Document Number: 71655
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single
0.260
(6.61)
0.150
(3.81)
0.024
(0.61)
0.026
(0.66)
0.050
(1.27)
0.032
(0.82)
0.040
(1.02)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 72599
Revision: 21-Jan-08
www.vishay.com
15
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
SI7860ADP-T1-GE3 替代型号
| 型号 | 制造商 | 描述 | 替代类型 | 文档 |
| SI7860DP-T1-GE3 | VISHAY | TRANSISTOR 11 A, 30 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, POWERPAK, | 完全替代 |
|
SI7860ADP-T1-GE3 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| SI7860DP | VISHAY | N-Channel Reduced Qg, Fast Switching MOSFET | 获取价格 |
|
| SI7860DP-E3 | VISHAY | TRANSISTOR 11 A, 30 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power | 获取价格 |
|
| SI7860DP-T1 | VISHAY | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | 获取价格 |
|
| SI7860DP-T1-GE3 | VISHAY | TRANSISTOR 11 A, 30 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, POWERPAK, SO-8, FET General Purpose Power | 获取价格 |
|
| Si7862ADP | VISHAY | N-Channel 16-V (D-S) MOSFET | 获取价格 |
|
| SI7862ADP-T1-E3 | VISHAY | TRANSISTOR 18 A, 16 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8, FET General Purpose Power | 获取价格 |
|
| SI7862ADP-T1-GE3 | VISHAY | TRANSISTOR 18 A, 16 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8, FET General Purpose Power | 获取价格 |
|
| SI7862DP | VISHAY | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | 获取价格 |
|
| SI7862DP-E3 | VISHAY | TRANSISTOR 18 A, 16 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power | 获取价格 |
|
| SI7862DP-T1 | VISHAY | TRANSISTOR 18 A, 16 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power | 获取价格 |
|
SI7860ADP-T1-GE3 相关文章
日本电装与富士电机携手投资14亿美元开发电动汽车SiC功率器件
- 2024-12-03
- 2
三星显示计划使用玻璃制造折叠屏手机背板
- 2024-12-03
- 2
三星大幅削减3D NAND生产中光刻胶用量，供应商面临挑战
- 2024-12-03
- 4
英伟达GB200芯片量产时间推迟，微软削减40%订单
- 2024-12-03
- 7
