SI7983DP 概述
Dual P-Channel 20-V (D-S) MOSFET
SI7983DP 数据手册
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PDF下载Si7983DP
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
ID (A)
- 12
Available
TrenchFET® Power MOSFET
New Low Thermal Resistance PowerPAK®
Package with Low 1.07 mm Profile
0.017 at VGS = - 4.5 V
0.020 at VGS = - 2.5 V
0.024 at VGS = - 1.8 V
•
•
- 20
- 11
- 10.1
APPLICATIONS
•
Load Switch
PowerPAK SO-8
S1
5.15 mm
6.15 mm
S
1
S
2
1
G1
2
S2
3
G2
4
D1
G
G
2
1
8
D1
7
D2
6
D2
5
Bottom View
Ordering Information: Si7983DP-T1-E3 (Lead (Pb)-free)
D
1
D
2
Si7983DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
10 s
Steady State
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
- 20
8
V
VGS
TA = 25 °C
TA = 70 °C
- 12
- 7.7
- 6.2
- 30
Continuous Drain Current (TJ = 150 °C)a
ID
- 9.6
A
IDM
IS
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
- 2.9
3.5
- 1.2
1.4
TA = 25 °C
TA = 70 °C
Maximum Power Dissipationa
PD
W
2.2
0.9
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b, c
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
26
Maximum
Unit
t ≤ 10 s
Steady State
Steady State
35
85
Maximum Junction-to-Ambienta
RthJA
60
°C/W
RthJC
Maximum Junction-to-Case (Drain)
2.2
2.7
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72637
S09-0272-Rev. B, 16-Feb-09
www.vishay.com
1
Si7983DP
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VGS(th)
IGSS
VDS = VGS, ID = - 600 µA
Gate Threshold Voltage
- 0.40
- 1
V
VDS = 0 V, VGS
=
8 V
Gate-Body Leakage
100
- 1
nA
VDS = - 20 V, VGS = 0 V
DS = - 20 V, VGS = 0 V, TJ = 55 °C
VDS ≥ - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 12 A
IDSS
Zero Gate Voltage Drain Current
µA
A
V
- 5
On-State Drain Currenta
ID(on)
- 30
0.014
0.016
0.020
41
0.017
0.020
0.024
Drain-Source On-State Resistancea
RDS(on)
VGS = - 2.5 V, ID = - 11 A
Ω
V
GS = - 1.8 V, ID = - 4.1 A
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
gfs
VDS = - 15 V, ID = - 12 A
IS = - 2.9 A, VGS = 0 V
S
V
VSD
- 0.8
- 1.2
74
Qg
Qgs
Qgd
Rg
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
49
7.2
12.1
8
V
DS = - 10 V, VGS = - 4.5 V, ID = - 12 A
f = 1 MHz
nC
Ω
td(on)
tr
td(off)
tf
35
55
90
60
V
DD = - 10 V, RL = 10 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω
Turn-Off Delay Time
Fall Time
390
190
106
585
285
160
ns
trr
IF = - 2.9 A, dI/dt = 100 A/µs
Source-Drain Reverse Recovery Time
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
25
20
15
10
5
30
25
20
15
10
5
V
GS
= 5 thru 2 V
1.5 V
T
= 125 °C
C
25 °C
1 V
- 55 °C
0
0
0
1
2
3
4
5
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
V
DS
- Drain-to-Source Voltage (V)
V
GS
-
Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
www.vishay.com
2
Document Number: 72637
S09-0272-Rev. B, 16-Feb-09
Si7983DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
6000
5000
4000
3000
2000
1000
0
0.06
0.05
0.04
0.03
C
iss
V
GS
= 1.8 V
V
V
= 2.5 V
GS
0.02
0.01
0.00
C
oss
= 4.5 V
25
GS
C
rss
0
4
8
12
16
20
0
5
10
D
15
20
30
V
DS
- Drain-to-Source Voltage (V)
I
- Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
1.6
1.4
1.2
1.0
0.8
0.6
5
V
I
= 4.5 V
V
D
= 10 V
= 12 A
GS
DS
= 12 A
I
D
4
3
2
1
0
- 50 - 25
0
25
50
75
100 125 150
0
10
20
30
40
50
60
T - Junction Temperature (°C)
J
Q - Total Gate Charge (nC)
g
Gate Charge
On-Resistance vs. Junction Temperature
0.06
0.05
0.04
0.03
0.02
0.01
0.00
30
10
T
= 150 °C
J
I
D
= 12 A
I
D
= 4.1 A
T
= 25 °C
J
1
0.0
0
1
2
3
4
5
0.2
0.4
0.6
0.8
1.0
1.2
VGS - Gate-to-Source Voltage (V)
V
SD
- Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72637
S09-0272-Rev. B, 16-Feb-09
www.vishay.com
3
Si7983DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4
50
40
I
D
= 600 µA
0.3
0.2
0.1
0.0
0.1
30
20
10
-
-
0.2
-
0
50
-
25
0
25
Temperature (°C)
Threshold Voltage
50
75
100 125 150
0.001
0.01
0.1
1
10
100
600
T
-
Time (s)
J
Single Pulse Power, Junction-to-Ambient
100
Limited by R
DS(on)*
I
Limited
DM
10
1
P(t) = 0.001
P(t) = 0.01
I
D(on)
Limited
P(t) = 0.1
P(t) = 1
P(t) = 10
T
= 25 °C
A
0.1
dc
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V at which R is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 68 °C/W
thJA
(t)
3. T
- T = P Z
A DM thJA
JM
Single Pulse
4. Surface Mounted
0.01
-
10
4
-
10
3
-
2
-
1
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
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4
Document Number: 72637
S09-0272-Rev. B, 16-Feb-09
Si7983DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
10
-3
10
-2
10
-1
10
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72637.
Document Number: 72637
S09-0272-Rev. B, 16-Feb-09
www.vishay.com
5
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Revision: 13-Jun-16
Document Number: 91000
1
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