首页 > SI8901EDB_06

SI8901EDB_06

更新时间：2025-07-01 10:19:20

品牌：VISHAY

描述：Bi-Directional P-Channel 20-V (D-S) MOSFET

PDF下载

中文翻译

免费 PCB/SMT

概述
数据手册

如果您发现信息不准确，欢迎纠错

SI8901EDB_06 概述

Bi-Directional P-Channel 20-V (D-S) MOSFET 双向P通道20 -V （D -S ）的MOSFET

SI8901EDB_06 数据手册

通过下载SI8901EDB_06数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

PDF下载

SPICE Device Model Si8901EDB

Vishay Siliconix

Bi-Directional P-Channel 20-V (D-S) MOSFET

CHARACTERISTICS

• P-Channel Vertical DMOS

• Macro Model (Subcircuit Model)

• Level 3 MOS

• Apply for both Linear and Switching Application

• Accurate over the −55 to 125°C Temperature Range

• Model the Gate Charge, Transient, and Diode Reverse Recovery

Characteristics

DESCRIPTION

The attached spice model describes the typical electrical

characteristics of the p-channel vertical DMOS. The subcircuit

model is extracted and optimized over the −55 to 125°C

temperature ranges under the pulsed 0-V to 5-V gate drive. The

saturated output impedance is best fit at the gate bias near the

threshold voltage.

A novel gate-to-drain feedback capacitance network is used to model

the gate charge characteristics while avoiding convergence difficulties

of the switched C_gdmodel. All model parameter values are optimized

to provide a best fit to the measured electrical data and are not

intended as an exact physical interpretation of the device.

SUBCIRCUIT MODEL SCHEMATIC

This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate

data sheet of the same number for guaranteed specification limits.

www.vishay.com

Document Number: 72950

S-60073Rev. B, 23-Jan-06

SPICE Device Model Si8901EDB

Vishay Siliconix

SPECIFICATIONS (T_J= 25°C UNLESS OTHERWISE NOTED)

Simulated Measured

Parameter

Symbol

Test Condition

Unit

Data

Static

Gate Threshold Voltage

On-State Drain Current^a

V_GS(th)

I_D(on)

0.49

_SS= V_GS, I_D= −250 µA

V_SS= −5 V, V_GS= −4.5 V

0.046

0.060

0.075

6.2

0.048

0.062

0.081

V_GS= −4.5 V, I_SS= −1 A

V_GS= −2.5 V, I_SS= −1 A

V_GS= −1.8 V, I_SS= −1 A

Drain-Source On-State Resistance^a

r_DS(on)

Ω

Forward Transconductance^a

g_fs

V_SS= −10 V, I_SS= −1 A

Dynamic^b

Turn-On Delay Time

t_d(on)

t_r

t_d(off)

t_f

2.3

2.2

1.3

Rise Time

_SS= −10 V, R_L= 10 Ω

µs

_SS≅ −1 A, V_GEN= −4.5 V, R_G= 6 Ω

Turn-Off Delay Time

Fall Time

2.1

Notes

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

www.vishay.com

Document Number: 72950

S-60073Rev. B, 23-Jan-06

SPICE Device Model Si8901EDB

Vishay Siliconix

COMPARISON OF MODEL WITH MEASURED DATA (T_J=25°C UNLESS OTHERWISE NOTED)

www.vishay.com

Document Number: 72950

S-60073Rev. B, 23-Jan-06

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf

(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein

or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any

information provided herein to the maximum extent permitted by law. The product specifications do not expand or

otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed

therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this

document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless

otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such

applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting

from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding

products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000

Revision: 18-Jul-08

www.vishay.com

SI8901EDB_06 相关器件

型号	制造商	描述	价格	文档
SI8902	SILICON	ISOLATED MONITORING ADC	获取价格
Si8902AEDB	VISHAY	N-Channel 24 V (D-S) MOSFET	获取价格
SI8902AEDB-T2-E1	VISHAY	Small Signal Field-Effect Transistor,	获取价格
Si8902B-A01-GS	SILICON	ISOLATED MONITORING ADC	获取价格
SI8902B-A01-GSR	SKYWORKS	最高分辨率:10;元器件封装:16-SOIC;	获取价格
SI8902B-A01-GSR	SILICON	ADC, Successive Approximation, 10-Bit, 1 Func, 3 Channel, Serial Access, CMOS, PDSO16, SOIC-16	获取价格
Si8902D-A01-GS	SILICON	ISOLATED MONITORING ADC	获取价格
SI8902D-A01-GSR	SKYWORKS	最高分辨率:10;元器件封装:16-SOIC;	获取价格
SI8902D-A01-GSR	SILICON	ADC, Successive Approximation, 10-Bit, 1 Func, 3 Channel, Serial Access, CMOS, PDSO16, SOIC-16	获取价格
SI8902EDB	VISHAY	Bi-Directional N-Channel 20-V (D-S) MOSFET	获取价格