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数据手册TPSMA10-HE3/5A 概述
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TPSMA10-HE3/5A 数据手册
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PDF下载TPSMA6.8 thru TPSMA43A
Vishay Semiconductors
formerly General Semiconductor
Surface Mount Automotive
Transient Voltage Suppressors
DO-214AC (SMA)
Breakdown Voltage 6.8 to 43.0V
Peak Pulse Power 400W
Cathode Band
Mounting Pad Layout
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
0.060 MIN
(1.52 MIN)
0.094 MAX
(2.38 MAX)
0.177 (4.50)
0.157 (3.99)
Dimensions in inches
and (millimeters)
0.012 (0.305)
0.006 (0.152)
0.050 MIN
(1.27 MIN)
0.220 REF
(5.58)
0.090 (2.29)
0.078 (1.98)
*Patent #’s
4,980,315
5,166,769
5,278,094
Features
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
MAX.
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Ideal for automated placement
• Low profile package
0.208 (5.28)
0.194 (4.93)
Available in uni-directional only
• Built-in strain relief
• Exclusive patented PAR® oxide passivated
chip construction
Mechanical Data
Case: JEDEC DO-214AC molded plastic body over
• 400W peak pulse power capability with a
10/1000ms waveform, repetition rate
(duty cycle): 0.01%
• Excellent clamping capability
• Low incremental surge resistance
• Very fast response time
passivated chip
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity: The color band denotes the cathode,
which is positive with respect to the anode under
normal TVS operation
• For devices with V
≥ 10V I are typically
D
(BR)
Mounting Position: Any
Weight: 0.002 oz., 0.064 g
less than 1.0mA at T = 150°C
• Designed for under the hood surface mount
applications
A
Packaging codes/options:
5A/7.5K per 13" Reel (12mm Tape), 90K/box
11/1.8K per 7" Reel (12mm Tape), 36K/box
• High temperature soldering:
250°C/10 seconds at terminals
Maximum Ratings and Thermal Characteristics(TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Peak power dissipation with a 10/1000µs waveform(1)(2) (Fig. 3)
PPPM
Minimum 400
W
Peak power pulse current with a
IPPM
See Next Table
A
10/1000µs waveform(1) (Fig. 1)
Peak forward surge current 8.3ms single half sine-wave(3)
Maximum instantaneous forward voltage at 25A(3)
Operating junction and storage temperature range
IFSM
VF
40
3.5
A
V
TJ, TSTG
–65 to +185
°C
Notes: (1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25°C per Fig. 2
(2) Mounted on P.C.B. with 0.2 x 0.2” (5.0 x 0.5mm) copper pads attached to each terminal
(3) Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minutes maximum
Document Number 88405
06-May-02
www.vishay.com
1
TPSMA6.8 thru TPSMA43A
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics(TA = 25°C unless otherwise noted)
T = 150°C Maximum
J
Breakdown Voltage
Maximum Maximum Peak Pulse Maximum
V
(1) at I
Reverse
Leakage
Reverse
Leakage
Surge
Current
PPM (Note 2)
(Amps)
Clamping
Voltage
(BR)
T
Device
Marking
Code
(V)
Test
Current
I (mA)
T
Stand-off
Voltage
at V
at V
I
at I
PPM
WM
WM
Device
Min.
Max.
V
(Volts)
I
R
(µA)
I (µA)
D
Vc (Volts)
WM
TPSMA6.8
TPSMA6.8A
TPSMA7.5
TPSMA7.5A
TPSMA8.2
TPSMA8.2A
TPSMA9.1
TPSMA9.1A
TPSMA10
TPSMA10A
TPSMA11
TPSMA11A
TPSMA12
TPSMA12A
TPSMA13
TPSMA13A
TPSMA15
TPSMA15A
TPSMA16
TPSMA16A
TPSMA18
TPSMA18A
TPSMA20
TPSMA20A
TPSMA22
TPSMA22A
TPSMA24
TPSMA24A
TPSMA27
TPSMA27A
TPSMA30
TPSMA30A
TPSMA33
TPSMA33A
TPSMA36
TPSMA36A
TPSMA39
TPSMA39A
TPSMA43
TPSMA43A
ADP
AEP
AFP
AGP
AHP
AKP
ALP
AMP
ANP
APP
AQP
ARP
ASP
ATP
AUP
AVP
AWP
AXP
AYP
AZP
BDP
BEP
BFP
BGP
BHP
BKP
BLP
BMP
BNP
BPP
BQP
BRP
BSP
BTP
BUP
BVP
BWP
BXP
BYP
BZP
6.12
6.45
6.75
7.13
7.38
7.79
8.19
8.65
9.00
7.48
7.14
8.25
7.88
9.02
8.61
10.00
9.55
10
10
10
10
10
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.65
8.92
9.40
9.72
10.20
10.50
11.10
12.10
12.80
12.90
13.60
14.50
15.30
16.20
17.10
17.80
18.80
19.40
20.50
21.80
23.10
24.30
25.60
26.80
28.20
29.10
30.80
31.60
33.30
34.80
36.80
300
1000
1000
500
500
200
200
50
50
20
20
37.0
38.1
34.2
35.4
32.0
33.1
29.0
29.9
26.7
27.6
24.7
25.6
23.1
24.0
21.1
22.0
18.2
18.9
17.0
17.8
15.1
15.9
13.7
14.4
12.5
13.1
11.5
12.0
10.2
10.7
9.2
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22
26.5
25.5
29.1
27.7
31.9
30.6
34.7
33.2
39.1
37.5
43.5
41.4
47.
45.7
52.0
49.9
56.4
53.9
61.9
59.3
300
150
150
50
50
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
10
11.00
10.50
12.10
11.60
13.20
12.60
14.30
13.70
16.30
15.80
17.60
16.80
19.80
18.90
22.00
21.00
24.20
23.10
26.40
25.20
29.70
28.40
33.00
31.50
36.30
34.70
39.60
37.80
42.90
41.00
47.30
45.20
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
9.50
9.90
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
10.50
10.80
11.40
11.70
12.40
13.50
14.30
14.40
15.20
16.20
17.10
18.00
19.00
19.80
20.90
21.60
22.80
24.30
25.70
27.00
28.50
29.70
31.40
32.40
34.20
35.10
37.10
38.70
40.90
9.7
8.4
8.8
7.7
8.0
7.1
7.4
6.5
6.7
Notes:
(1) V
measured after I applied for 300µs, I =square wave pulse or equivalent
T T
(BR)
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
www.vishay.com
2
Document Number 88405
06-May-02
TPSMA6.8 thru TPSMA43A
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig.1 – Peak Pulse Power Rating Curve
Fig. 2 – Pulse Derating Curve
100
100
75
TA = 25°C
Non-repetitive pulse
waveform shown in Fig. 3
10
50
25
0
1.0
0.2 x 0.2" (5.0 x 5.0mm)
copper pad areas
0.1
0.1µs
50
150
200
1.0µs
10µs
100µs
1.0ms
10ms
0
100
td, Pulse Width, sec.
TA, Ambient Temperature (°C)
Fig. 4 – Typical Junction Capacitance
Fig. 3 – Pulse Waveform
10,000
1,000
100
150
TJ = 25°C
Pulse Width (td)
TJ = 25°C
f = 1 MHz
Vsig = 50mVp-p
tr = 10µsec.
is defined as the point
Peak Value
IPPM
where the peak current
decays to 50% of IPPM
VR measured
at zero bias
100
50
0
Half Value — IPP
IPPM
2
10/1000µsec. Waveform
as defined by R.E.A.
VR measured
at stand-off
voltage, VWM
td
10
1.0
3.0
4.0
0
2.0
1
10
100
200
V(BR), Breakdown Voltage (V)
t — Time (ms)
Fig. 5 – Maximum Non-Repetitive
Peak Forward Surge Current
200
TJ = TJ max
8.3ms single half sine-wave
(JEDEC method)
100
50
10
1
5
10
50
100
Number of Cycles at 60 Hz
Document Number 88405
06-May-02
www.vishay.com
3
TPSMA10-HE3/5A 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| TPSMA10-M3/5AT | VISHAY | Trans Voltage Suppressor Diode, 400W, 8.1V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMA, 2 PIN | 获取价格 |
|
| TPSMA10-M3/61T | VISHAY | Trans Voltage Suppressor Diode, 400W, 8.1V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMA, 2 PIN | 获取价格 |
|
| TPSMA10/11 | VISHAY | Trans Voltage Suppressor Diode, 8.1V V(RWM), Unidirectional, | 获取价格 |
|
| TPSMA10/5A | VISHAY | Trans Voltage Suppressor Diode, 8.1V V(RWM), Unidirectional, | 获取价格 |
|
| TPSMA100A | UNSEMI | Surface Mount Transient Voltage Suppressors | 获取价格 |
|
| TPSMA100A | ANOVA | Surface Mount Transient Voltage Suppressors | 获取价格 |
|
| TPSMA100A | LGE | 暂无描述 | 获取价格 |
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| TPSMA100CA | UNSEMI | Surface Mount Transient Voltage Suppressors | 获取价格 |
|
| TPSMA100CA | ANOVA | Surface Mount Transient Voltage Suppressors | 获取价格 |
|
| TPSMA100CA | LGE | 暂无描述 | 获取价格 |
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