| 品牌 | 图片 | 型号 | 描述 | 用途标签 | 供应商 | |
 |
IRFR010
中文翻译 品牌: SAMSUNG |
N-CHANNEL POWER MOSFET N沟道功率MOSFET |
晶体 晶体管 功率场效应晶体管 脉冲 | |||
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IRFR010-T1
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 8.2A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | 开关 脉冲 晶体管 | |||
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IRFR012-T1
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 6.7A I(D), 50V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | ||||
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IRFR014
中文翻译 品牌: SAMSUNG |
N-CHANNEL POWER MOSFET N沟道功率MOSFET |
晶体 晶体管 功率场效应晶体管 开关 脉冲 | |||
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IRFR014-T1
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 8.2A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | 开关 脉冲 晶体管 | |||
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IRFR015-T1
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 6.7A I(D), 60V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | 开关 脉冲 晶体管 | |||
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IRFR024ATF
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 15A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3/2 | 脉冲 晶体管 | ||
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IRFR120-T1
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | ||||
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IRFR121-T1
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 8.4A I(D), 80V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | 开关 脉冲 晶体管 | |||
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IRFR211
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 2.7A I(D), 150V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | 晶体管 | |||
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IRFR220-T1
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||||
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IRFR222-T1
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 3.8A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | 开关 脉冲 晶体管 | |||
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IRFR312
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 1A I(D), 400V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||||
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IRFR9010
中文翻译 品牌: SAMSUNG |
P-CHANNEL POWER MOSFETS P沟道功率MOSFET |
晶体 晶体管 功率场效应晶体管 脉冲 | ||
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IRFR9012-T1
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 4.5A I(D), 50V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | 开关 脉冲 晶体管 | |||
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IRFR9014
中文翻译 品牌: SAMSUNG |
P-CHANNEL POWER MOSFETS P沟道功率MOSFET |
晶体 晶体管 功率场效应晶体管 开关 脉冲 | |||
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IRFR9014-T1
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 5.3A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | 开关 脉冲 晶体管 | |||
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IRFR9015-T1
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 4.5A I(D), 60V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | 开关 脉冲 晶体管 | |||
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IRFR9020-T1
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 9.9A I(D), 50V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | 开关 脉冲 晶体管 | |||
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IRFR9110
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 3.2A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | 开关 晶体管 | |||
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IRFR9120
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 5.9A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | 开关 晶体管 | |||
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IRFR9210
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 2A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | 开关 晶体管 | |||
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IRFR9210-T1
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 2A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | 开关 脉冲 晶体管 | |||
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IRFR9212-T1
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 1.6A I(D), 200V, 4.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | ||||
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IRFR9220
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | 开关 晶体管 |
Total:251
总25条记录，每页显示30条记录分1页显示。