品牌 | 图片 | 型号 | 描述 | 用途标签 | 供应商 | |
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IRFS620
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 局域网 晶体管 | ||
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IRFS621
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 4.1A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 局域网 晶体管 | ||
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IRFS622
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | 局域网 晶体管 | ||
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IRFS624
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 3.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 局域网 开关 脉冲 晶体管 | ||
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IRFS625
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 2.9A I(D), 250V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | 局域网 开关 脉冲 晶体管 | ||
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IRFS630
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 局域网 晶体管 | ||
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IRFS631
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 5.9A I(D), 150V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 局域网 晶体管 | ||
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IRFS632
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 8A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | 局域网 晶体管 | ||
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IRFS634
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 5.6A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 局域网 开关 脉冲 晶体管 | ||
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IRFS634A
中文翻译 品牌: SAMSUNG |
Advanced Power MOSEFT 高级电源MOSEFT |
晶体 晶体管 功率场效应晶体管 脉冲 局域网 | ||
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IRFS635
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 4.4A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | 局域网 开关 脉冲 晶体管 | ||
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IRFS640
中文翻译 品牌: SAMSUNG |
Improved inductive ruggedness 改进的感应耐用 |
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IRFS640A
中文翻译 品牌: SAMSUNG |
Improved gate charge 改进的栅极电荷 |
晶体 栅极 晶体管 开关 脉冲 局域网 | |||
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IRFS641
中文翻译 品牌: SAMSUNG |
Improved inductive ruggedness 改进的感应耐用 |
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IRFS642
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | 局域网 晶体管 | ||
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IRFS645
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 7.4A I(D), 250V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | 局域网 开关 脉冲 晶体管 |
Total:161
总16条记录,每页显示30条记录分1页显示。