| 品牌 | 图片 | 型号 | 描述 | 用途标签 | 供应商 | |
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2N6849
中文翻译 品牌: NJSEMI |
P-CHANNEL ENHANCEMENT MOSFET P沟道增强型MOSFET |
晶体 晶体管 功率场效应晶体管 | |||
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2N6849
中文翻译 品牌: MICROSEMI |
P-CHANNEL MOSFET P沟道MOSFET |
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2N6849
中文翻译 品牌: DIGITRON |
Polarity : P Channel; Type : Enhancement; Power Dissipation : 0.8; Maximum Drain-Source Voltage : | ||||
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2N6849E
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | ||||
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2N6849EA
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | 晶体管 | |||
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2N6849EB
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | 晶体管 | |||
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2N6849EBPBF
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | 晶体管 | |||
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2N6849EC
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | ||||
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2N6849ED
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | ||||
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2N6849EPBF
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | ||||
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2N6849HP
中文翻译 品牌: SEME-LAB |
P-CHANNEL POWER MOSFET P沟道功率MOSFET |
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2N6849PBF
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 6.5A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | ||||
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2N6849SCC5206/003
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | ||||
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2N6849SCC5206/003PBF
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | ||||
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2N6849U
中文翻译 品牌: MICROSEMI |
P-CHANNEL MOSFET P沟道MOSFET |
晶体 晶体管 开关 | |||
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2N6849_09
中文翻译 品牌: MICROSEMI |
P-CHANNEL MOSFET P沟道MOSFET |
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2N684A
中文翻译 品牌: CENTRAL |
SILICON CONTROLLED RECTIFIER 25 AMPS, 25 THRU 800 VOLTS 可控硅整流25安培， 25 THRU 800伏 |
栅极 可控硅 | ||
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2N684A
中文翻译 品牌: NJSEMI |
Thyristor SCR 150V 200A 3-Pin TO-48 Box | 栅 触发装置 栅极 可控硅整流器 | |||
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2N684LEADFREE
中文翻译 品牌: CENTRAL |
Silicon Controlled Rectifier, 25A I(T)RMS, 150V V(DRM), 150V V(RRM), 1 Element, TO-48, TO-48, 2 PIN | 触发装置 可控硅整流器 | ||
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2N684MPBF
中文翻译 品牌: VISHAY |
Silicon Controlled Rectifier, 25A I(T)RMS, 150V V(DRM), 150V V(RRM), 1 Element, TO-208AA | 栅 栅极 | |||
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2N684PBF
中文翻译 品牌: INFINEON |
Silicon Controlled Rectifier, 25A I(T)RMS, 150V V(DRM), 150V V(RRM), 1 Element, TO-208AA | 栅 栅极 | |||
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2N684PBFREE
中文翻译 品牌: CENTRAL |
Silicon Controlled Rectifier, | 触发装置 可控硅整流器 | |||
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2N685
中文翻译 品牌: KNOX |
25 and 35 Amp RMS SCRs 25和35 AMP RMS SCRS |
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2N685
中文翻译 品牌: INFINEON |
25 and 35 Amp RMS SCRs 25和35 AMP RMS SCRS |
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2N685
中文翻译 品牌: CENTRAL |
SILICON CONTROLLED RECTIFIER 25 AMPS, 25 THRU 800 VOLTS 可控硅整流25安培， 25 THRU 800伏 |
可控硅 | |||
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2N685
中文翻译 品牌: NJSEMI |
DIFFUSED SILICON PNPN CINTROLLED RECTIFIER 扩散硅PNPN CINTROLLED整流器 |
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2N685
中文翻译 品牌: DIGITRON |
Descriptive : Silicon Controlled Rectifier; Peak Repetitive Reverse Voltage : 200; Peak Repetitive | ||||
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2N685-HR
中文翻译 品牌: DIGITRON |
Descriptive : Silicon Controlled Rectifier; Peak Repetitive Reverse Voltage : 200; Peak Repetitive | ||||
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2N6850
中文翻译 品牌: ETC |
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 3.5A I(D) | TO-205AF
晶体管| MOSFET | P沟道| 150V V（ BR ） DSS | 3.5AI （D ） | TO- 205AF\n |
晶体 晶体管 | |||
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2N6851
中文翻译 品牌: INFINEON |
-200V Single P-Channel Hi-Rel MOSFET in a TO-205AF package - A 2N6851 with Hermetic Packaging |