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AP60T03GI [A-POWER]

Simple Drive Requirement Low Gate Charge; 简单的驱动要求低栅极电荷
AP60T03GI
型号： AP60T03GI
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

Simple Drive Requirement Low Gate Charge
简单的驱动要求低栅极电荷

栅极 驱动
文件： 总5页 (文件大小：127K)
中文：  中文翻译
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AP60T03GI  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
▼ Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
30V  
12mΩ  
45A  
D
S
▼ Low Gate Charge  
▼ Fast Switching  
G
Description  
Advanced Power MOSFETs from APEC provide the designer with  
the best combination of fast switching, ruggedized device design,  
low on-resistance and cost-effectiveness.  
G
D
S
TO-220CFM(I)  
The TO-220CFM isolation package is widely preferred for  
commercial-industrial through hole applications.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
30  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
±20  
V
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25℃  
ID@TC=100℃  
IDM  
45  
A
32  
A
120  
A
PD@TC=25℃  
TSTG  
Total Power Dissipation  
37.5  
W
℃
℃
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 175  
-55 to 175  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
℃/W  
℃/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient  
4.0  
65  
Rthj-a  
Data and specifications subject to change without notice  
1
200805051  
AP60T03GI  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
RDS(ON)  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
Static Drain-Source On-Resistance2 VGS=10V, ID=20A  
VGS=0V, ID=250uA  
30  
-
-
-
-
-
V
12  
25  
mΩ  
mΩ  
VGS=4.5V, ID=15A  
-
VGS(th)  
Gate Threshold Voltage  
Forward Transconductance2  
VDS=VGS, ID=250uA  
VDS=10V, ID=10A  
VDS=24V, VGS=0V  
VGS= ±20V  
ID=20A  
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
25  
-
3
V
gfs  
-
S
IDSS  
Drain-Source Leakage Current  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
10  
IGSS  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
-
±100  
Qg  
12  
4
20  
-
Qgs  
Qgd  
td(on)  
tr  
VDS=20V  
VGS=4.5V  
7
-
VDS=15V  
9
-
ID=20A  
58  
18  
6
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω,VGS=10V  
RD=0.75Ω  
VGS=0V  
-
-
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
1135 1820  
VDS=25V  
200  
135  
-
-
f=1.0MHz  
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
VSD  
trr  
Forward On Voltage2  
Reverse Recovery Time2  
IS=20A, VGS=0V  
IS=20A, VGS=0V,  
dI/dt=100A/µs  
-
-
-
-
1.3  
V
24  
16  
-
-
ns  
nC  
Qrr  
Reverse Recovery Charge  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse test  
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.  
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.  
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED  
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN.  
2
AP60T03GI  
100  
80  
60  
40  
20  
0
160  
120  
80  
40  
0
T C =25 o C  
T C =175 o C  
10V  
8.0V  
10V  
8.0V  
6.0V  
5.0V  
6.0V  
5.0V  
V
G =4.0V  
V G =4.0V  
0
1
2
3
4
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
90  
70  
50  
30  
10  
2.0  
1.6  
1.2  
0.8  
0.4  
I D = 15 A  
I
D =20A  
T
C =25 o C  
V G =10V  
Ω
2
4
6
8
10  
-50  
0
50  
100  
150  
200  
T j , Junction Temperature ( o C)  
V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
2.6  
2.2  
1.8  
1.4  
1
50  
40  
30  
20  
10  
0
T j =175 o C  
T j =25 o C  
0.6  
-50  
0
50  
100  
150  
200  
0
0.4  
0.8  
1.2  
1.6  
T j ,Junction Temperature ( o C)  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3
AP60T03GI  
f=1.0MHz  
12  
10000  
1000  
100  
I D = 20 A  
10  
V DS =10V  
DS =15V  
DS =20V  
V
8
6
4
2
0
V
C iss  
C oss  
C rss  
1
5
9
13  
17  
21  
25  
29  
0
4
8
12  
16  
20  
24  
V DS , Drain-to-Source Voltage (V)  
Q G , Total Gate Charge (nC)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
1000  
100  
10  
1
Duty factor=0.5  
0.2  
0.1  
0.1  
0.05  
100us  
0.02  
0.01  
PDM  
1ms  
0.01  
t
Single Pulse  
T
10ms  
100ms  
1s  
Duty factor = t/T  
Peak Tj = PDM x Rthjc + TC  
T C =25 o C  
DC  
Single Pulse  
0.001  
1
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
0.1  
1
10  
100  
t , Pulse Width (s)  
V DS , Drain-to-Source Voltage (V)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
VG  
VDS  
90%  
QG  
4.5V  
QGD  
QGS  
10%  
VGS  
tr  
td(on)  
td(off) tf  
Q
Charge  
Fig 11. Switching Time Waveform  
Fig 12. Gate Charge Waveform  
4
ADVANCED POWER ELECTRONICS CORP.  
Package Outline : TO-220CFM  
E
A
Millimeters  
SYMBOLS  
MIN NOM MAX  
4.50 4.70 4.90  
2.30 2.65 3.00  
0.50 0.70 0.90  
0.95 1.20 1.50  
0.45 0.65 0.80  
2.30 2.60 2.90  
9.70 10.00 10.40  
2.91 3.41 3.91  
14.70 15.40 16.10  
A
A1  
b
c2  
φ
b1  
c
c2  
E
L3  
L4  
φ
e
L4  
---- 3.20  
---- 2.54  
----  
----  
L3  
1.All Dimensions Are in Millimeters.  
A1  
b1  
2.Dimension Does Not Include Mold Protrusions.  
c
b
e
Part Marking Information & Packing : TO-220CFM  
Part Number  
meet Rohs requirement  
Package Code  
LOGO  
60T03GI  
YWWSSS  
Date Code (YWWSSS)  
Y：Last Digit Of The Year  
WW：Week  
SSS：Sequence  
5

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