AP60T03GJ-HF [A-POWER]
TRANSISTOR 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power;
| 型号： | AP60T03GJ-HF |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | TRANSISTOR 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power |
| 文件： | 总4页 (文件大小：80K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP60T03AH/J
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼ Simple Drive Requirement
BVDSS
RDS(ON)
ID
30V
12mΩ
45A
▼ Low Gate Charge
▼ Fast Switching
G
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
TO-252(H)
TO-251(J)
S
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP60T03AJ) are available for low-profile applications.
G
D
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
30
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
±20
V
Continuous Drain Current, VGS @ 10V
ID@TC=25℃
ID@TC=100℃
IDM
45
A
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
32
A
120
A
PD@TC=25℃
Total Power Dissipation
44
W
Linear Derating Factor
0.352
-55 to 175
-55 to 175
W/℃
℃
℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Value
3.4
Units
℃/W
℃/W
Rthj-c
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Rthj-a
110
Data and specifications subject to change without notice
200909033
AP60T03AH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=250uA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
30
-
-
0.03
-
-
-
V
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=20A
V/℃
mΩ
RDS(ON)
-
12
V
GS=4.5V, ID=15A
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
25
mΩ
V
VGS(th)
gfs
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=10V, ID=10A
VDS=30V, VGS=0V
VDS=24V ,VGS=0V
VGS= ±20V
3
Forward Transconductance2
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=175oC)
25
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
-
1
-
250
IGSS
Qg
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
-
±100
ID=20A
11.6
3.9
7
-
-
-
-
-
-
-
-
-
-
Qgs
Qgd
td(on)
tr
VDS=24V
VGS=4.5V
VDS=15V
8.8
57.5
18.5
6.4
1135
200
135
ID=20A
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=10V
RD=0.75Ω
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
VDS=25V
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
Reverse Recovery Time2
IS=45A, VGS=0V
IS=20A, VGS=0V,
dI/dt=100A/µs
-
-
-
-
1.3
V
ns
nC
23.3
16
-
-
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP60T03AH/J
125
100
75
50
25
0
90
60
30
0
T C =175 o C
10V
8.0V
10V
8.0V
T C =25 o C
6.0V
5.0V
6.0V
5.0V
V G =4.0V
V G =4.0V
0.0
1.0
2.0
3.0
4.0
0.0
1.0
2.0
3.0
4.0
5.0
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
80
60
40
20
0
2
1.6
1.2
0.8
0.4
I D =20A
V G =10V
I D =15A
T
C =25 ℃
Ω
Ω
Ω
Ω
2
4
6
8
10
-50
25
100
175
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
100
10
1
2.8
2.3
1.8
1.3
0.8
0.3
Tj=175 o C
Tj=25 o C
0.1
0
0.5
1
1.5
-50
25
100
175
T j , Junction Temperature ( o C )
V SD (V) , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
AP60T03AH/J
f=1.0MHz
10000
1000
100
12
I D =20A
V
V
V
DS =16V
DS =20V
DS =24V
9
6
3
0
Ciss
Coss
Crss
10
0
6
12
18
24
1
8
15
22
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1000
100
10
Duty Factor = 0.5
0.2
0.1
0.1
100us
1ms
0.05
PDM
0.02
t
0.01
T
Single Pulse
10ms
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
100ms
DC
T C =25 o C
Single Pulse
1
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
RD
VDS
TO THE
OSCILLOSCOPE
TO THE
VDS
D
D
S
OSCILLOSCOPE
0.8 x RATED VDS
0.5 x RATED VDS
G
RG
G
VGS
S
+
-
+
-
10V
VGS
1~ 3 mA
IG
ID
Fig 11. Switching Time Circuit
Fig 12. Gate Charge Circuit
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