AP6681GMT-HF [A-POWER]
Low On-resistance, SO-8 Compatible; 低导通电阻， SO- 8兼容
| 型号： | AP6681GMT-HF |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | Low On-resistance, SO-8 Compatible |
| 文件： | 总4页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP6681GMT-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
BVDSS
RDS(ON)
ID
-30V
3.1mΩ
-135A
D
S
▼ SO-8 Compatible
▼ Simple Drive Requirement
▼ RoHS Compliant & Halogen-Free
G
D
Description
D
D
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
D
The PMPAK® 5x6 package is special for DC-DC converters application
and the foot print is compatible with SO-8 with backside heat sink.
S
S
S
G
PMPAK® 5x6
Absolute Maximum Ratings
Symbol
Parameter
Rating
-30
Units
VDS
VGS
Drain-Source Voltage
V
V
Gate-Source Voltage
+20
Continuous Drain Current (Chip), VGS @ 10V
Continuous Drain Current3, VGS @ 10V
Continuous Drain Current3, VGS @ 10V
Pulsed Drain Current1
ID@TC=25℃
ID@TA=25℃
ID@TA=70℃
IDM
-135
A
-33
A
-26.4
-200
A
A
PD@TC=25℃
PD@TA=25℃
TSTG
Total Power Dissipation
83.3
W
W
℃
℃
Total Power Dissipation
5
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
Unit
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
1.5
25
Rthj-a
Data and specifications subject to change without notice
1
201211221
AP6681GMT-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=-10V, ID=-20A
VGS=0V, ID=-250uA
-30
-
2.7
3.9
-1.45
66
-
-
V
mΩ
mΩ
V
-
-
3.1
V
GS=-4.5V, ID=-20A
4.6
VGS(th)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
VDS=VGS, ID=-250uA
VDS=-10V, ID=-20A
VDS=-24V, VGS=0V
VGS=+20V, VDS=0V
ID=-20A
-1
-
-3
gfs
-
S
IDSS
IGSS
uA
nA
nC
nC
nC
ns
-
-10
-
-
+100
Qg
-
94
25
38
20
14
210
84
150
Qgs
Qgd
td(on)
tr
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
VDS=-15V
-
-
-
-
-
-
-
VGS=-4.5V
-
VDS=-15V
-
ns
ID=-1A
-
ns
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω
-
ns
VGS=-10V
-
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
Input Capacitance
VGS=0V
-
13800 22080
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS=-15V
-
1060
800
2.7
-
-
f=1.0MHz
-
f=1.0MHz
-
5.4
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Test Conditions
IS=-20A, VGS=0V
IS=-10A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
VSD
trr
-
-
-
-
-1.2
V
Reverse Recovery Time
Reverse Recovery Charge
45
50
-
-
ns
nC
Qrr
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 60oC/W at steady state.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP6681GMT-HF
200
160
120
80
200
160
120
80
C =25 o
C
T C = 150 o
C
-10V
-7.0V
-6.0V
-10V
-7.0V
-6.0V
T
-5.0V
-5.0V
V G = -4.0V
V
G = -4.0V
40
40
0
0
0
1
2
3
4
5
6
0
2
4
6
8
10
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
5
1.6
1.4
1.2
1.0
0.8
0.6
I D = -20A
I D = -20 A
V
G = -10V
T
C =25 ℃
4
3
2
Ω
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
30
20
10
0
2.0
1.6
1.2
0.8
0.4
0.0
I D = -250uA
T j =150 o
C
T j =25 o
C
-50
0
50
100
150
0
0.2
0.4
0.6
0.8
1
1.2
1.4
T j , Junction Temperature ( o C)
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP6681GMT-HF
f=1.0MHz
C iss
16000
12000
8000
4000
0
8
I D = -20 A
V
DS = -15V
6
4
2
0
C oss
C rss
0
40
80
120
160
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1000
100
10
Duty factor=0.5
100us
Operation in this area
0.2
0.1
limited by R
DS(ON)
0.1
1ms
0.05
PDM
t
10ms
T
0.02
0.01
100ms
Duty factor = t/T
Peak Tj = PDM x Rthjc + Tc
T C =25 o
Single Pulse
C
DC
Single Pulse
0.01
1
0.00001
0.0001
0.001
0.01
0.1
1
10
0.1
1
10
100
t , Pulse Width (s)
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
100
80
60
40
20
0
160
V
DS = -5V
120
80
T j =150 o
C
40
T j =25 o
C
T j =-40 o
C
0
0
1
2
3
4
5
6
25
50
75
100
125
150
-V GS , Gate-to-Source Voltage (V)
T C , Case Temperature ( o C )
Fig 11. Transfer Characteristics
Fig 12. Maximum Continuous Drain Current
v.s. Case Temperature
4
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