AP73T03GH,J-HF 概述
Low On-resistance, Simple Drive Requirement 低导通电阻,简单的驱动要求
AP73T03GH,J-HF 数据手册
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Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
BVDSS
RDS(ON)
ID
30V
9mΩ
55A
D
S
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-252(H)
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP73T03GJ)
is available for low-profile applications.
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
Rating
30
Units
VDS
VGS
Drain-Source Voltage
V
V
Gate-Source Voltage
+20
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
ID@TC=25℃
ID@TC=100℃
IDM
55
A
39
A
160
A
PD@TC=25℃
TSTG
Total Power Dissipation
50
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 175
-55 to 175
TJ
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
3
Rthj-a
62.5
110
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
1
201003162
AP73T03GH/J-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=250uA
VGS=10V, ID=30A
GS=4.5V, ID=20A
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
30
-
-
-
-
-
9
V
mΩ
mΩ
Static Drain-Source On-Resistance2
RDS(ON)
V
-
16
VGS(th)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VDS=VGS, ID=250uA
VDS=10V, ID=30A
VDS=30V, VGS=0V
VGS=+20V, VDS=0V
ID=30A
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
42
-
3
V
gfs
-
S
IDSS
IGSS
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
10
-
+100
Qg
13
2.5
9.5
8
21
-
Qgs
Qgd
td(on)
tr
VDS=24V
VGS=4.5V
-
VDS=15V
-
ID=30A
85
20.5
10
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=10V
RD=0.5Ω
-
-
Ciss
Coss
Crss
Rg
Input Capacitance
VGS=0V
700 1120
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS=25V
215
155
1.9
-
-
-
f=1.0MHz
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
Reverse Recovery Time2
IS=30A, VGS=0V
IS=10A, VGS=0V,
dI/dt=100A/µs
-
-
-
-
1.2
V
23
14
-
-
ns
nC
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by max. junction temperature
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP73T03GH/J-HF
160
120
80
40
0
100
80
60
40
20
0
T C =175 o C
10V
10V
7.0V
6.0V
T C =25 o C
7.0V
6.0V
5.0V
5.0V
V G =4.0V
V G = 4.0V
0
2
4
6
8
10
12
0.0
2.0
4.0
6.0
8.0
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
12
11
10
9
2.0
1.6
1.2
0.8
0.4
I D =20A
I D =30A
C =25 o C
V
G =10V
T
Ω
8
7
6
-50
0
50
100
150
200
2
4
6
8
10
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
1.2
0.8
0.4
0.0
30
20
10
0
T j =175 o C
T j =25 o C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
200
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP73T03GH/J-HF
f=1.0MHz
10
1000
800
600
400
200
0
I D =30A
8
V
DS =15V
DS =18V
C iss
V
V
DS =24V
6
4
2
0
C oss
C rss
0
4
8
12
16
20
24
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1000
Duty factor = 0.5
0.2
100
10
1
Operation in this area
limited by R
DS(ON)
0.1
100us
0.1
0.05
PDM
t
1ms
0.02
T
0.01
Duty Factor = t/T
T C =25 o C
10ms
100ms
DC
Peak Tj = PDM x Rthjc + TC
Single Pulse
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
0.1
1
10
100
V DS ,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS
VG
90%
QG
4.5V
QGD
QGS
10%
VGS
tr
td(on)
td(off) tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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