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AP73T03GMP-HF [A-POWER]

TRANSISTOR 53 A, 30 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Power;
AP73T03GMP-HF
型号： AP73T03GMP-HF
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

TRANSISTOR 53 A, 30 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Power

开关 脉冲 光电二极管 晶体管
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AP73T03GMP-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
▼ Lower On-resistance  
BVDSS  
RDS(ON)  
ID  
30V  
9mΩ  
53A  
▼ Simple Drive Requirement  
▼ RoHS Compliant & Halogen-Free  
G
Description  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
D
D
D
D
D
ruggedized device design, low on-resistance and cost-effectiveness.  
G
S
S
The ESOP-8 (Exposed pad SO-8) package is widely preferred for  
commercial-industrial surface mount applications and exposed  
S
ESOP-8  
backside design is compatible with PMPAK® 5x6.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
30  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
V
ID@TC=25℃  
ID@TA=25℃  
ID@TA=70℃  
IDM  
Continuous Drain Current (Chip)  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
53  
A
18.3  
A
14.7  
A
160  
A
PD@TC=25℃  
PD@TA=25℃  
EAS  
Total Power Dissipation  
41.6  
W
W
mJ  
℃
℃
Total Power Dissipation  
5
Single Pulse Avalanche Energy4  
Storage Temperature Range  
Operating Junction Temperature Range  
28.8  
TSTG  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
℃/W  
℃/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient3  
3
Rthj-a  
25  
Data & specifications subject to change without notice  
1
201102141  
AP73T03GMP-HF  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
RDS(ON)  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
Static Drain-Source On-Resistance2 VGS=10V, ID=20A  
VGS=0V, ID=250uA  
30  
-
-
-
-
-
9
V
mΩ  
mΩ  
V
GS=4.5V, ID=20A  
-
16  
VGS(th)  
Gate Threshold Voltage  
Forward Transconductance  
Drain-Source Leakage Current  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
VDS=VGS, ID=250uA  
VDS=10V, ID=20A  
VDS=30V, VGS=0V  
VGS=+20V, VDS=0V  
ID=20A  
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
42  
-
3
V
gfs  
-
S
IDSS  
IGSS  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
Ω
10  
-
+100  
Qg  
12  
3
19.2  
Qgs  
Qgd  
td(on)  
tr  
VDS=15V  
-
-
-
-
-
-
VGS=4.5V  
7.5  
8.5  
6
VDS=15V  
ID=1A  
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω  
22  
9.5  
VGS=10V  
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
VGS=0V  
700 1120  
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
VDS=15V  
215  
155  
1.9  
-
-
f=1.0MHz  
f=1.0MHz  
3.8  
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
VSD  
trr  
Forward On Voltage2  
Reverse Recovery Time2  
IS=20A, VGS=0V  
IS=10A, VGS=0V,  
dI/dt=100A/µs  
-
-
-
-
1.2  
V
24  
15  
-
-
ns  
nC  
Qrr  
Reverse Recovery Charge  
Notes:  
1.Pulse width limited by Max. junction temperature  
2.Pulse test  
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec, 60oC/W at steady state.  
4.Starting Tj=25oC , VDD=25V , L=0.1mH , RG=25Ω , IAS=24A.  
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.  
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.  
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED  
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN.  
2
AP73T03GMP-HF  
160  
120  
80  
40  
0
100  
80  
60  
40  
20  
0
T C =25 o C  
T C =150 o C  
10V  
7.0V  
6.0V  
10V  
7.0V  
6.0V  
5.0V  
5.0V  
V G =4.0V  
V G = 4.0 V  
0
4
8
12  
16  
0
2
4
6
8
10  
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
2.0  
1.6  
1.2  
0.8  
0.4  
12  
11  
10  
9
I D =20A  
I D =20A  
T
C =25 o C  
V
G =10V  
Ω
8
7
6
-50  
0
50  
100  
150  
2
4
6
8
10  
T j , Junction Temperature ( o C)  
V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
1.6  
1.2  
0.8  
0.4  
0.0  
30  
20  
10  
0
T j =150 o C  
T j =25 o C  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3
AP73T03GMP-HF  
f=1.0MHz  
10  
1000  
800  
600  
400  
200  
0
I D =20A  
V DS =15V  
8
C iss  
6
4
2
0
C oss  
C rss  
1
5
9
13  
17  
21  
25  
29  
0
4
8
12  
16  
20  
24  
V DS ,Drain-to-Source Voltage (V)  
Q G , Total Gate Charge (nC)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
1
1000  
100  
10  
Duty factor = 0.5  
Operation in this  
area limited by  
RDS(ON)  
0.2  
0.1  
0.1  
100us  
1ms  
0.05  
PDM  
t
0.02  
T
0.01  
Duty factor = t/T  
T C =25 o C  
10ms  
100ms  
DC  
Peak Tj = PDM x Rthjc + Tc  
Single Pulse  
Single Pulse  
1
0.01  
0.1  
1
10  
100  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
t , Pulse Width (s)  
V DS ,Drain-to-Source Voltage (V)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
VG  
VDS  
90%  
QG  
4.5V  
QGD  
QGS  
10%  
VGS  
t
td(on) tr  
d(off) tf  
Q
Charge  
Fig 11. Switching Time Waveform  
Fig 12. Gate Charge Waveform  
4

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