AP75N07AGP [A-POWER]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | AP75N07AGP |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总4页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP75N07AGP
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼ Low Gate Charge
BVDSS
RDS(ON)
ID
75V
11mΩ
80A
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-220(P)
The TO-220 package is widely preferred for commercial-industrial
through-hole applications and suited for low voltage applications such
as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
Rating
75
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
+30
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V4
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
80
A
ID@TC=100℃
70
A
IDM
320
A
PD@TC=25℃
Total Power Dissipation
300
W
mJ
℃
℃
EAS
TSTG
TJ
Single Pulse Avalanche Energy3
Storage Temperature Range
Operating Junction Temperature Range
450
-55 to 175
-55 to 175
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
0.5
62
Rthj-a
Data & specifications subject to change without notice
1
200902093
AP75N07AGP
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
VGS(th)
Parameter
Test Conditions
Min.
75
-
Typ.
Max.
Units
V
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=10V, ID=40A
VGS=0V, ID=1mA
-
-
-
-
11
4
mΩ
V
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
gfs
Forward Transconductance
VDS=15V, ID=40A
VDS=75V, VGS=0V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
78
-
-
S
IDSS
Drain-Source Leakage Current
Drain-Source Leakage Current (T=125oC) VDS=60V, VGS=0V
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
10
-
250
j
IGSS
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VGS=+30V, VDS=0V
ID=40A
-
+100
Qg
100
13
47
15
83
67
86
3220
650
220
3.3
160
Qgs
Qgd
td(on)
tr
VDS=60V
-
VGS=10V
-
VDD=40V
-
ID=30A
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=10V
RD=1.33Ω
VGS=0V
-
-
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
5150
VDS=25V
-
-
f=1.0MHz
f=1.0MHz
5
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Reverse Recovery Time2
Test Conditions
Min.
Typ.
-
Max.
Units
V
VSD
trr
Tj=25℃, IS=40A, VGS=0V
IS=40A, VGS=0V
-
-
-
1.5
ns
80
-
-
nC
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
235
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω , IAS=30A.
4.Package limitation current is 80A, calculated continuous current
based on maximum allowable junction temperature is 108A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP75N07AGP
160
120
80
280
240
200
160
120
80
T C = 25 o
C
T C = 175 o
C
10V
9 .0 V
8 .0V
7.0 V
10V
9 .0 V
8 .0V
7.0 V
V
G = 5 .0V
V G = 5 .0V
40
40
0
0
0
1
2
3
4
5
6
0
3
6
9
12
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
18
16
14
12
10
8
2.4
2.0
1.6
1.2
0.8
0.4
I D =40A
I D =40A
T
C =25 o C
V
G =10V
Ω
-50
0
50
100
150
200
2
4
6
8
10
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
1.2
1.0
0.8
0.6
0.4
40
30
20
10
0
T j =175 o C
T j =25 o C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
200
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP75N07AGP
f=1.0MHz
12
10000
1000
100
I D = 4 0 A
10
8
C iss
V DS = 60 V
6
C oss
4
2
C rss
0
0
20
40
60
80
100
120
1
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
100
10
1
DUTY=0.5
100us
0.2
0.1
1ms
10ms
100ms
DC
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
T c =25 o C
Peak Tj = PDM x Rthjc + TC
SINGLE PULSE
Single Pulse
1
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
160
120
80
40
0
V
DS =5V
VG
T j =175 o C
T j =25 o C
QG
10V
QGD
QGS
Q
Charge
0
2
4
6
8
10
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
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