AP85T03GP [A-POWER]
TRANSISTOR 75 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN, FET General Purpose Power;
| 型号： | AP85T03GP |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | TRANSISTOR 75 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN, FET General Purpose Power 局域网 开关 脉冲 晶体管 |
| 文件： | 总4页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP85T03GS/P
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
BVDSS
RDS(ON)
ID
30V
6mΩ
75A
D
S
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
Description
G
D
S
TO-263(S)
TO-220(P)
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP85T03GP) is
available for low-profile applications.
G
D
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
30
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
+20
75
V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
ID@TC=25℃
ID@TC=100℃
IDM
A
55
A
350
107
0.7
A
PD@TC=25℃
Total Power Dissipation
W
Linear Derating Factor
W/℃
℃
℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 175
-55 to 175
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
1.4
40
62
Rthj-a
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
1
200906196
AP85T03GS/P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=250uA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
30
-
-
0.018
-
-
-
V
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=45A
VGS=4.5V, ID=30A
V/℃
mΩ
RDS(ON)
-
6
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
3
mΩ
V
VGS(th)
gfs
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=10V, ID=30A
VDS=30V, VGS=0V
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=125oC) VDS=24V, VGS=0V
55
-
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
1
-
250
+100
52
IGSS
Qg
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VGS=+20V, VDS=0V
ID=30A
-
33
7.5
24
11.2
77
35
67
Qgs
Qgd
td(on)
tr
VDS=24V
VGS=4.5V
VDS=15V
-
-
-
-
ID=30A
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=10V
RD=0.5Ω
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
2700 4200
VDS=25V
550
380
-
-
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
Reverse Recovery Time2
IS=45A, VGS=0V
IS=30A, VGS=0V,
dI/dt=100A/µs
-
-
-
-
1.3
V
28
10
-
-
ns
nC
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP85T03GS/P
300
250
200
150
100
50
150
100
50
T C =25 o C
T
C = 175 o
C
10V
7.0V
6.0V
10V
7.0V
6.0V
4.5V
V G =4.0V
4.5V
V G =4.0V
0
0
0
1
2
3
4
5
0
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
13
11
9
2.0
1.5
1.0
0.5
I D =30A
I
D =45A
T c =25 ℃
V G =10V
Ω
7
5
3
-50
0
50
100
150
200
2
4
6
8
10
12
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
30
20
10
0
2
1.6
1.2
0.8
0.4
0
T j =175 o C
T j =25 o C
-50
25
100
175
0
0.2
0.4
0.6
0.8
1
1.2
T j ,Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP85T03GS/P
f=1.0MHz
12
10000
1000
100
I D =30A
10
V DS =15V
DS =20V
DS =24V
C iss
V
8
6
4
2
0
V
C oss
C rss
0
10
20
30
40
50
60
70
1
6
11
16
21
26
31
Q G , Total Gate Charge (nC)
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
DUTY=0.5
100
10
1
0.2
0.1
100us
0.1
0.05
1ms
PDM
t
0.02
T
10ms
100ms
DC
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
T c =25 o C
Single Pulse
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS
VG
90%
QG
4.5V
QGD
QGS
10%
VGS
t
td(on) tr
d(off) tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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