AP9408AGI [A-POWER]
Fast Switching Performance, Full Isolation Package; 快速切换性能,全隔离封装型号: | AP9408AGI |
厂家: | ADVANCED POWER ELECTRONICS CORP. |
描述: | Fast Switching Performance, Full Isolation Package |
文件: | 总5页 (文件大小:158K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AP9408AGI
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Fast Switching Performance
▼ Single Drive Requirement
BVDSS
RDS(ON)
ID
30V
10mΩ
53A
D
S
▼ Full Isolation Package
G
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
G
D
S
ruggedized device design, low on-resistance and cost-effectiveness.
TO-220CFM(I)
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
Absolute Maximum Ratings
Symbol
Parameter
Rating
30
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
+20
V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
ID@TC=25℃
ID@TC=100℃
IDM
53
A
33
A
160
A
PD@TC=25℃
TSTG
Total Power Dissipation
29.7
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
4.2
65
Rthj-a
Data and specifications subject to change without notice
1
200810282
AP9408AGI
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=10V, ID=30A
VGS=0V, ID=250uA
30
-
-
-
-
-
V
10
15
mΩ
mΩ
VGS=4.5V, ID=20A
-
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=10V, ID=30A
VDS=30V, VGS=0V
VGS= +20V
ID=20A
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3
V
gfs
Forward Transconductance
Drain-Source Leakage Current
30
-
-
S
IDSS
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
10
IGSS
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
-
+100
Qg
6.5
1.8
3.7
6
10.5
Qgs
Qgd
td(on)
tr
VDS=24V
-
VGS=4.5V
-
VDS=15V
-
ID=20A
56
15
3.7
600
185
80
2.5
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=10V
RD=0.75Ω
VGS=0V
-
-
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
960
-
VDS=25V
f=1.0MHz
-
f=1.0MHz
3.8
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
Reverse Recovery Time2
IS=30A, VGS=0V
IS=10A, VGS=0V,
dI/dt=100A/µs
-
-
-
-
1.2
V
23
16
-
-
ns
nC
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9408AGI
100
80
60
40
20
0
160
120
80
40
0
T C =150 o C
10V
7.0V
6.0V
5.0V
10V
7.0V
6.0V
5.0V
T C =25 o C
V
G =4.0V
V G =4.0V
0
1
2
3
4
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
14
13
12
11
10
9
2.0
1.6
1.2
0.8
0.4
I D = 20 A
I
D =30A
T
C =25 o C
V G =10V
Ω
8
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
30
20
10
0
1.4
1.2
1
T j =150 o C
T j =25 o C
0.8
0.6
0.4
-50
0
50
100
150
0
0.2
0.4
0.6
0.8
1
1.2
T j ,Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9408AGI
f=1.0MHz
8
1000
800
600
400
200
0
I D = 20 A
6
V DS =15V
DS =20V
DS =24V
V
V
C iss
4
2
0
C oss
C rss
0
2
4
6
8
10
12
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Duty factor=0.5
100
10
1
100us
0.2
0.1
0.1
1ms
10ms
100ms
1s
0.05
PDM
t
T
0.02
DC
0.01
Duty factor = t/T
T C =25 o C
Peak Tj = PDM x Rthjc + TC
Single Pulse
Single Pulse
0.01
0.00001
0.1
0.0001
0.001
0.01
0.1
1
10
0.1
1
10
100
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGD
QGS
10%
VGS
tr
td(on)
td(off) tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-220CFM
E
Millimeters
SYMBOLS
MIN
4.30
2.30
0.50
0.95
0.45
2.30
9.70
12.00
2.91
NOM
4.70
2.65
0.70
1.20
0.65
2.60
MAX
A
A1
b
4.90
3.00
0.90
1.50
0.80
2.90
c2
φ
b1
c
c2
E
10.00 10.40
L
---
15.00
3.91
L4
L3
L4
φ
e
3.41
14.70 15.40 16.10
----
----
3.20
2.54
----
----
L3
A1
b1
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
L
c
b
Part Marking Information & Packing : TO-220CFM
LOGO
Part Number
Package Code
9408AGI
Meet Rohs requirement
for low voltage MOSFET only
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
5
相关型号:
AP9408AGM
TRANSISTOR 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Power
A-POWER
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