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AP9468GH [A-POWER]

N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
AP9468GH
型号： AP9468GH
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
N沟道增强型功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲
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AP9468GH/J  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
▼ Lower Gate Charge  
BVDSS  
RDS(ON)  
ID  
40V  
7mΩ  
75A  
▼ Simple Drive Requirement  
G
▼ Fast Switching Characteristic  
Description  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
G
D
S
TO-252(H)  
The TO-252 package is widely preferred for all commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters. The through-hole version (AP9468GJ) are  
available for low-profile applications.  
G
D
S
TO-251(J)  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
40  
Units  
VDS  
VGS  
Drain-Source Voltage  
V
V
Gate-Source Voltage  
±20  
ID@TC=25℃  
ID@TC=100℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current  
Pulsed Drain Current1  
75  
A
57  
A
300  
A
PD@TC=25℃  
Total Power Dissipation  
89  
W
W/℃  
℃
℃
Linear Derating Factor  
0.7  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
℃/W  
℃/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient  
1.4  
Rthj-a  
110  
Data & specifications subject to change without notice  
1
200810232  
AP9468GH/J  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
Parameter  
Test Conditions  
VGS=0V, ID=250uA  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
40  
-
-
0.01  
-
-
-
V
ΔBVDSS/ΔTj  
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=250uA  
V/℃  
mΩ  
RDS(ON)  
Static Drain-Source On-Resistance2 VGS=10V, ID=45A  
-
7
V
GS=4.5V, ID=30A  
-
0.5  
-
-
-
9
mΩ  
V
VGS(th)  
gfs  
Gate Threshold Voltage  
VDS=VGS, ID=250uA  
VDS=10V, ID=30A  
VDS=40V, VGS=0V  
1.5  
Forward Transconductance  
Drain-Source Leakage Current  
75  
-
-
S
IDSS  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
Ω
-
1
Drain-Source Leakage Current (Tj=150oC) VDS=32V, VGS=0V  
-
-
25  
IGSS  
Qg  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
VGS=±20V  
ID=30A  
-
-
±100  
-
36  
4
58  
-
Qgs  
Qgd  
td(on)  
tr  
VDS=30V  
VGS=4.5V  
VDS=20V  
ID=30A  
-
-
20  
8
-
-
-
-
62  
36  
16  
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=1.0Ω,VGS=10V  
RD=0.67Ω  
VGS=0V  
-
-
-
-
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
-
2235 3580  
VDS=25V  
f=1.0MHz  
f=1.0MHz  
-
365  
325  
1.8  
-
-
-
-
2.7  
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
VSD  
trr  
Forward On Voltage2  
Reverse Recovery Time2  
IS=30A, VGS=0V  
IS=20A, VGS=0V,  
dI/dt=100A/µs  
-
-
-
-
1.2  
V
38  
30  
-
-
ns  
nC  
Qrr  
Reverse Recovery Charge  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse test  
3.Package limitation current is 75A  
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.  
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.  
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED  
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN.  
2
AP9468GH/J  
240  
200  
160  
120  
80  
240  
200  
160  
120  
80  
T C =150 o C  
T C =25 o C  
10V  
7.0 V  
5.0V  
4.5 V  
10V  
7 .0V  
5.0V  
4.5 V  
V
G = 3.0 V  
V G =3.0V  
40  
40  
0
0
0.0  
2.0  
4.0  
6.0  
8.0  
0.0  
2.0  
4.0  
6.0  
8.0  
10.0  
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
8
7
6
5
4
2.0  
1.6  
1.2  
0.8  
0.4  
I D =30A  
I D =45A  
C =25 o C  
V
G =10V  
T
Ω
25  
50  
75  
100  
125  
150  
2
4
6
8
10  
T j , Junction Temperature ( o C)  
V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
40  
30  
20  
10  
0
8.0  
7.0  
6.0  
5.0  
4.0  
T j =25 o C  
T j =150 o C  
V GS =4.5V  
V GS =10V  
0
0.4  
0.8  
1.2  
1.6  
0
20  
40  
60  
80  
V SD , Source-to-Drain Voltage (V)  
I D , Drain Current (A)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. On-Resistance vs.  
Drain Current  
3
AP9468GH/J  
f=1.0MHz  
16  
10000  
I D =30A  
DS =20V  
12  
V
C iss  
V
DS =25V  
DS =30V  
V
1000  
8
C oss  
C rss  
4
100  
0
1
5
9
13  
17  
21  
25  
29  
0
20  
40  
60  
80  
V DS ,Drain-to-Source Voltage (V)  
Q G , Total Gate Charge (nC)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
1000  
100  
10  
1
1
Duty factor = 0.5  
0.2  
100us  
0.1  
0.1  
1ms  
10ms  
100ms  
DC  
0.05  
PDM  
t
0.02  
T
0.01  
Duty Factor = t/T  
T C =25 o C  
Peak Tj = PDM x Rthjc + TC  
Single Pulse  
Single Pulse  
0
0.01  
0.1  
1
10  
100  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t , Pulse Width (s)  
V DS ,Drain-to-Source Voltage (V)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
240  
V DS =5V  
VG  
200  
160  
120  
80  
T j =25 o C  
T j =150 o C  
QG  
4.5V  
QGD  
QGS  
40  
Q
Charge  
0
0
1
2
3
4
5
6
V GS , Gate-to-Source Voltage (V)  
Fig 11. Transfer Characteristics  
Fig 12. Gate Charge Waveform  
4
ADVANCED POWER ELECTRONICS CORP.  
Package Outline : TO-252  
Millimeters  
D
SYMBOLS  
MIN  
NOM MAX  
D1  
A2  
A3  
B1  
D
1.80  
0.40  
0.40  
6.00  
4.80  
3.50  
2.20  
0.50  
5.10  
0.50  
--  
2.30  
0.50  
0.70  
6.50  
5.35  
4.00  
2.63  
0.85  
5.70  
1.10  
2.30  
0.50  
2.80  
0.60  
1.00  
7.00  
5.90  
4.50  
3.05  
1.20  
6.30  
1.80  
--  
E2  
D1  
E3  
F
E3  
E1  
F1  
E1  
E2  
e
C
0.35  
0.65  
B1  
F1  
F
1.All Dimensions Are in Millimeters.  
e
e
2.Dimension Does Not Include Mold Protrusions.  
R : 0.127~0.381  
A2  
(0.1mm  
C
A3  
Part Marking Information & Packing : TO-252  
Laser Marking  
Part Number  
Meet Rohs requirement  
for low voltage MOSFET only  
9468GH  
Package Code  
LOGO  
YWWSSS  
Date Code (YWWSSS)  
Y：Last Digit Of The Year  
WW：Week  
SSS：Sequence  
5
ADVANCED POWER ELECTRONICS CORP.  
Package Outline : TO-251  
D
Millimeters  
A
SYMBOLS  
MIN  
NOM  
MAX  
c1  
D1  
A
A1  
B1  
B2  
c
2.20  
0.90  
0.40  
0.60  
0.40  
0.40  
6.40  
4.80  
6.70  
5.40  
1.30  
----  
2.30  
1.20  
0.60  
0.85  
0.50  
0.50  
6.60  
5.20  
7.00  
5.60  
1.50  
2.30  
8.30  
2.40  
1.50  
0.80  
1.05  
0.60  
0.60  
6.80  
5.50  
7.30  
5.80  
1.70  
----  
E2  
E
E1  
c1  
D
D1  
E
A1  
B2  
B1  
E1  
E2  
e
F
F
7.00  
9.60  
1.All Dimensions Are in Millimeters.  
c
2.Dimension Does Not Include Mold Protrusions.  
e
e
Part Marking Information & Packing : TO-251  
Part Number  
meet Rohs requirement  
for low voltage MOSFET only  
Package Code  
9468GJ  
LOGO  
YWWSSS  
Date Code (YWWSSS)  
Y ：Last Digit Of The Year  
WW ：Week  
SSS ：Sequence  
6

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