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AP9469GH [A-POWER]

N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
AP9469GH
型号： AP9469GH
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
N沟道增强型功率MOSFET
文件： 总4页 (文件大小：65K)
中文：  中文翻译
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AP9469GH/J  
Pb Free Plating Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
▼ Lower Gate Charge  
BVDSS  
RDS(ON)  
ID  
40V  
50mΩ  
18A  
D
S
▼ Simple Drive Requirement  
▼ Fast Switching Characteristic  
▼ RoHS Compliant  
G
Description  
G
D
The TO-252 package is universally preferred for all commercial-  
industrial surface mount applications and suited for low voltage  
applications such as DC/DC converters. The through-hole version  
(AP9469GJ) is available for low-profile applications.  
S
TO-252(H)  
G
D
S
TO-251(J)  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
40  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
±20  
V
ID@TC=25℃  
ID@TC=100℃  
IDM  
Continuous Drain Current  
Continuous Drain Current  
Pulsed Drain Current1  
18  
A
11  
A
50  
A
PD@TC=25℃  
Total Power Dissipation  
26  
W
Linear Derating Factor  
0.21  
W/℃  
℃
℃
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
4.8  
Units  
℃/W  
℃/W  
Rthj-c  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Max.  
Max.  
Rthj-a  
110  
Data & specifications subject to change without notice  
200531051-1/4  
AP9469GH/J  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
Parameter  
Test Conditions  
VGS=0V, ID=250uA  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
40  
-
-
0.03  
-
-
-
V
ΔBVDSS/ΔTj  
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA  
Static Drain-Source On-Resistance2 VGS=10V, ID=12A  
VGS=4.5V, ID=8A  
V/℃  
mΩ  
RDS(ON)  
-
50  
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
72  
mΩ  
V
VGS(th)  
gfs  
Gate Threshold Voltage  
VDS=VGS, ID=250uA  
VDS=10V, ID=12A  
VDS=40V, VGS=0V  
VDS=32V, VGS=0V  
VGS=±20V  
3
Forward Transconductance  
Drain-Source Leakage Current (T=25oC)  
11  
-
-
S
IDSS  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
Ω
1
j
Drain-Source Leakage Current (T=150oC)  
-
25  
j
IGSS  
Qg  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
-
±100  
ID=12A  
6
10  
Qgs  
Qgd  
td(on)  
tr  
VDS=30V  
2
-
VGS=4.5V  
3
-
VDS=20V  
7
-
ID=12A  
21  
14  
2
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω,VGS=10V  
RD=1.67Ω  
-
-
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
VGS=0V  
480  
70  
50  
1
770  
-
VDS=25V  
f=1.0MHz  
-
f=1.0MHz  
1.5  
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
VSD  
trr  
Forward On Voltage2  
Reverse Recovery Time2  
IS=12A, VGS=0V  
IS=12A, VGS=0V,  
dI/dt=100A/µs  
-
-
-
-
1.3  
V
21  
15  
-
-
ns  
nC  
Qrr  
Reverse Recovery Charge  
Notes:  
1.Pulse width limited by safe operating area.  
2.Pulse width <300us , duty cycle <2%.  
2/4  
AP9469GH/J  
30  
20  
10  
0
30  
20  
10  
0
T C =25 o C  
10V  
7.0V  
10V  
7.0V  
T C = 150 o  
C
5.0V  
4.5V  
5.0V  
4.5V  
V G =3.0V  
V G =3.0V  
0
2
4
6
0
2
4
6
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
1.8  
1.4  
1.0  
0.6  
155  
115  
75  
I D = 12 A  
I D = 8 A  
T C =25 o C  
V
G =10V  
Ω
35  
2
4
6
8
10  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
6
1.8  
1.4  
1
4
2
0
T j =150 o C  
T j =25 o C  
0.6  
0.2  
-50  
0
50  
100  
150  
0
0.4  
0.8  
1.2  
T j , Junction Temperature ( o C)  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3/4  
AP9469GH/J  
f=1.0MHz  
C iss  
1000  
12  
I
D = 1 2 A  
V DS = 20 V  
8
4
0
V
V
DS = 25 V  
DS = 30 V  
100  
C oss  
C rss  
10  
0
3
6
9
1
5
9
13  
17  
21  
25  
29  
Q G , Total Gate Charge (nC)  
V DS ,Drain-to-Source Voltage (V)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
1
100.0  
Duty factor=0.5  
0.2  
0.1  
100us  
10.0  
0.1  
0.05  
1ms  
PDM  
t
1.0  
0.02  
10ms  
100ms  
DC  
T
T c =25 o C  
0.01  
Duty factor = t/T  
Peak Tj = PDM x Rthjc + TC  
Single Pulse  
Single Pulse  
0.01  
0.1  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
0.1  
1
10  
100  
t , Pulse Width (s)  
V DS ,Drain-to-Source Voltage (V)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
30  
VG  
V DS =5V  
QG  
20  
10  
0
4.5V  
T j =25 o C  
T j =150 o C  
QGD  
QGS  
Q
Charge  
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)  
Fig 11. Transfer Characteristics  
Fig 12. Gate Charge Waveform  
4/4  

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