AP9468GS-HF [A-POWER]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | AP9468GS-HF |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总4页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP9468GS-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower On-resistance
D
S
BVDSS
RDS(ON)
ID
40V
7mΩ
80A
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G
D
S
TO-263(S)
Absolute Maximum Ratings
Symbol
Parameter
Rating
40
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
+20
V
ID@TC=25℃
ID@TC=100℃
IDM
Continuous Drain Current3
Continuous Drain Current
Pulsed Drain Current1
80
A
55
A
320
A
PD@TC=25℃
Total Power Dissipation
89
W
Linear Derating Factor
0.7
W/℃
℃
℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Value
1.4
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Rthj-a
40
Data & specifications subject to change without notice
1
201303113
AP9468GS-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=10V, ID=45A
VGS=0V, ID=250uA
40
-
-
-
-
-
V
7
9
mΩ
mΩ
V
GS=4.5V, ID=30A
-
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=10V, ID=30A
VDS=40V, VGS=0V
0.5
-
-
75
-
1.5
V
gfs
Forward Transconductance
Drain-Source Leakage Current
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
-
1
Drain-Source Leakage Current (Tj=125oC) VDS=32V, VGS=0V
-
-
250
IGSS
Qg
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
VGS=+20V, VDS=0V
ID=30A
-
-
+100
-
36
4
58
-
Qgs
Qgd
td(on)
tr
VDS=30V
VGS=4.5V
VDS=20V
ID=30A
-
-
20
8
-
-
-
-
62
36
16
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=1Ω
-
-
VGS=10V
VGS=0V
-
-
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
-
2235 3580
VDS=25V
f=1.0MHz
f=1.0MHz
-
365
325
1.8
-
-
-
-
-
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
IS=30A, VGS=0V
IS=20A, VGS=0V,
dI/dt=100A/µs
-
-
-
-
1.2
V
Reverse Recovery Time
Reverse Recovery Charge
38
30
-
-
ns
nC
Qrr
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 80A .
4.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9468GS-HF
240
200
160
120
80
240
200
160
120
80
T C =150 o C
T C =25 o C
10V
7.0 V
5.0V
4.5 V
10V
7 .0V
5.0V
4.5 V
V
G = 3.0 V
V G =3.0V
40
40
0
0
0.0
2.0
4.0
6.0
8.0
0.0
2.0
4.0
6.0
8.0
10.0
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
1.6
1.2
0.8
0.4
8
7
6
5
4
I D =45A
I D =30A
T
C =25 o C
V
G =10V
Ω
25
50
75
100
125
150
2
4
6
8
10
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
40
30
20
10
0
8.0
7.0
6.0
5.0
4.0
T j =25 o C
T j =150 o C
Ω
V GS =4.5V
V GS =10V
0
0.4
0.8
1.2
1.6
0
20
40
60
80
V SD , Source-to-Drain Voltage (V)
I D , Drain Current (A)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. On-Resistance vs.
Drain Current
3
AP9468GS-HF
f=1.0MHz
16
10000
I D =30A
12
V DS =20V
V
DS =25V
DS =30V
C iss
V
8
1000
C oss
C rss
4
100
0
1
5
9
13
17
21
25
29
0
20
40
60
80
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
100
10
1
Duty factor = 0.5
0.2
100us
0.1
0.1
0.05
PDM
1ms
t
0.02
T
0.01
10ms
100ms
DC
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
T C =25 o C
Single Pulse
Single Pulse
1
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
V DS ,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
240
V DS =5V
VG
200
160
120
80
T j =25 o C
T j =150 o C
QG
4.5V
QGD
QGS
40
Q
Charge
0
0
1
2
3
4
5
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
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