AP9468GP-HF [A-POWER]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | AP9468GP-HF |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总4页 (文件大小：133K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP9468GP-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼ Lower On-resistance
BVDSS
RDS(ON)
ID
40V
7mΩ
80A
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
TO-220(P)
D
S
The TO-220 package is widly preferred for commercial-industrial
power applications and suited for low voltage applications such as
DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
Rating
40
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V3
+20
80
V
ID@TC=25℃
ID@TC=100℃
IDM
A
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
55
A
320
89
A
PD@TC=25℃
PD@TA=25℃
TSTG
Total Power Dissipation
W
W
℃
℃
Total Power Dissipation
2
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
1.4
62
Rthj-a
Data & specifications subject to change without notice
1
201008021
AP9468GP-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=10V, ID=45A
VGS=0V, ID=250uA
40
-
-
-
-
-
V
7
9
mΩ
mΩ
V
GS=4.5V, ID=30A
-
VGS(th)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VDS=VGS, ID=250uA
VDS=10V, ID=30A
VDS=32V, VGS=0V
VGS=+20V, VDS=0V
ID=30A
0.5
-
1.5
V
gfs
-
-
-
-
-
-
-
-
-
-
-
-
-
-
75
-
-
S
IDSS
IGSS
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
1
-
+100
Qg
36
4
58
-
Qgs
Qgd
td(on)
tr
VDS=30V
VGS=4.5V
20
8
-
VDS=20V
-
ID=30A
62
36
16
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=1.0Ω
-
VGS=10V
-
Ciss
Coss
Crss
Rg
Input Capacitance
VGS=0V
2235 3580
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS=25V
365
325
1.8
-
-
-
f=1.0MHz
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
Reverse Recovery Time2
IS=30A, VGS=0V
IS=20A, VGS=0V,
dI/dt=100A/µs
-
-
-
-
1.2
V
38
30
-
-
ns
nC
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 80A .
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9468GP-HF
240
200
160
120
80
240
200
160
120
80
T C =150 o C
T C =25 o C
10V
7.0 V
5.0V
4.5 V
10V
7 .0V
5.0V
4.5 V
V
G = 3.0 V
V
G =3.0V
40
40
0
0
0.0
2.0
4.0
6.0
8.0
0.0
2.0
4.0
6.0
8.0
10.0
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
1.6
1.2
0.8
0.4
8
7
6
5
4
I D =45A
I D =30A
T
C =25 o C
V
G =10V
Ω
25
50
75
100
125
150
2
4
6
8
10
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
40
30
20
10
0
8.0
7.0
6.0
5.0
4.0
T j =25 o C
T j =150 o C
V GS =4.5V
V GS =10V
0
0.4
0.8
1.2
1.6
0
20
40
60
80
V SD , Source-to-Drain Voltage (V)
I D , Drain Current (A)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. On-Resistance vs.
Drain Current
3
AP9468GP-HF
f=1.0MHz
4000
3000
2000
1000
0
12
I D =30A
10
V DS =20V
8
V
DS =25V
DS =30V
C iss
V
6
4
2
0
C oss
C rss
1
5
9
13
17
21
25
29
0
20
40
60
80
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
100
10
1
Duty factor = 0.5
Operation in this area
limited by R
DS(ON)
0.2
100us
0.1
0.1
0.05
PDM
1ms
t
0.02
T
0.01
10ms
100ms
DC
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
T C =25 o C
Single Pulse
Single Pulse
1
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
V DS ,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
240
V DS =5V
VG
200
160
120
80
T j =25 o C
T j =150 o C
QG
4.5V
QGD
QGS
40
Q
Charge
0
0
1
2
3
4
5
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
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