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AP9575AGH-HF_14 [A-POWER]

Higher Gate-Source Voltage;
AP9575AGH-HF_14
型号： AP9575AGH-HF_14
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

Higher Gate-Source Voltage

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文件： 总4页 (文件大小：104K)
中文：  中文翻译
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AP9575AGH/J-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
P-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
▼ Higher Gate-Source Voltage  
▼ Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
-60V  
64mΩ  
-17A  
▼ Fast Switching Characteristic  
G
▼ RoHS Compliant & Halogen-Free  
Description  
G
The TO-252 package is widely preferred for commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters. The through-hole version (AP9575AGJ)  
are available for low-profile applications.  
D
TO-252(H)  
S
G
D
S
TO-251(J)  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
-60  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+30  
-17  
V
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25℃  
ID@TC=100℃  
IDM  
A
-11  
A
-60  
A
PD@TC=25℃  
Total Power Dissipation  
36  
W
Linear Derating Factor  
0.29  
W/℃  
℃
℃
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
3.5  
Units  
℃/W  
℃/W  
℃/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient (PCB mount)3  
Maximum Thermal Resistance, Junction-ambient  
Rthj-a  
62.5  
110  
Rthj-a  
Data and specifications subject to change without notice  
1
201105313  
AP9575AGH/J-HF  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
RDS(ON)  
VGS(th)  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
Static Drain-Source On-Resistance2 VGS=-10V, ID=-12A  
VGS=0V, ID=-250uA  
-60  
-
-
-
-
-
V
mΩ  
V
64  
-3  
Gate Threshold Voltage  
VDS=VGS, ID=-250uA  
-1  
gfs  
Forward Transconductance  
VDS=-10V, ID=-9A  
VDS=-60V, VGS=0V  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
12  
-
-
S
IDSS  
Drain-Source Leakage Current  
Drain-Source Leakage Current (Tj=125oC) VDS=-48V, VGS=0V  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
-10  
-
-250  
IGSS  
Qg  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
VGS=+30V, VDS=0V  
ID=-12A  
-
+100  
35  
5
56  
-
Qgs  
Qgd  
td(on)  
tr  
VDS=-48V  
VGS=-10V  
12  
12  
23  
45  
60  
-
VDS=-30V  
-
ID=-12A  
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω,VGS=-10V  
RD=2.5Ω  
-
-
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
VGS=0V  
1440 2300  
VDS=-25V  
160  
120  
-
-
f=1.0MHz  
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
VSD  
trr  
Forward On Voltage2  
Reverse Recovery Time2  
IS=-12A, VGS=0V  
IS=-12A, VGS=0V,  
dI/dt=-100A/µs  
-
-
-
-
-1.3  
V
ns  
nC  
43  
75  
-
-
Qrr  
Reverse Recovery Charge  
Notes:  
1.Pulse width limited Max. junction temperature.  
2.Pulse test  
3.Surface mounted on 1 in2 copper pad of FR4 board  
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.  
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.  
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED  
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN.  
2
AP9575AGH/J-HF  
60  
40  
20  
0
40  
30  
20  
10  
0
-10V  
-7.0V  
T C = 1 5 0 o C  
-10V  
-7.0V  
T C =25 o C  
-5.0V  
-4.5V  
-5.0V  
-4.5V  
V G =- 4 .0V  
VG =-3.0V  
0
2
4
6
8
10  
0
2
4
6
8
-V DS , Drain-to-Source Voltage (V)  
-V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
210  
170  
130  
90  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
I D = - 12 A  
I D = -9 A  
V
G =-10V  
T
C =25 ℃  
Ω
50  
2
4
6
8
10  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
-V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
16.0  
12.0  
8.0  
3.0  
2.5  
2.0  
1.5  
1.0  
T j =150 o  
C
T j =25 o C  
4.0  
0.0  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
-V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3
AP9575AGH/J-HF  
f=1.0MHz  
12  
2400  
2000  
1600  
1200  
800  
400  
0
10  
8
I D = -12A  
C iss  
V
DS = -48V  
6
4
2
0
C oss  
C rss  
0
10  
20  
30  
40  
50  
1
5
9
13  
17  
21  
25  
29  
Q G , Total Gate Charge (nC)  
-V DS , Drain-to-Source Voltage (V)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
100  
10  
1
1
Duty factor=0.5  
Operation in this  
area limited by  
RDS(ON)  
100us  
1ms  
0.2  
0.1  
0.1  
0.05  
PDM  
10ms  
0.02  
t
100ms  
T
0.01  
DC  
T C =25 o C  
Duty factor = t/T  
Single Pulse  
Peak Tj = PDM x Rthjc + TC  
Single Pulse  
0.1  
0.01  
0.1  
1
10  
100  
1000  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
-V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
30  
20  
10  
0
T j =25 o C  
T j =150 o C  
VG  
V
DS = -5V  
QG  
-10V  
QGD  
QGS  
Q
Charge  
0
2
4
6
8
-V GS , Gate-to-Source Voltage (V)  
Fig 11. Transfer Characteristics  
Fig 12. Gate Charge Waveform  
4

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