AP9575AGS-HF [A-POWER]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | AP9575AGS-HF |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总4页 (文件大小：100K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP9575AGS-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼ Lower Gate Charge
BVDSS
RDS(ON)
ID
-60V
64mΩ
-17A
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-263(S)
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
Rating
-60
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
+20
V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
ID@TC=25℃
ID@TC=100℃
IDM
-17
A
-11
A
-60
A
PD@TC=25℃
TSTG
Total Power Dissipation
36
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
3.5
40
Rthj-a
Data and specifications subject to change without notice
1
201105171
AP9575AGS-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
VGS(th)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=-10V, ID=-12A
VGS=0V, ID=-250uA
-60
-
-
-
-
-
V
mΩ
V
64
-3
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
gfs
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
VDS=-10V, ID=-9A
VDS=-60V, VGS=0V
VGS=+20V, VDS=0V
ID=-12A
-
-
-
-
-
-
-
-
-
-
-
-
-
12
-
-
S
IDSS
IGSS
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
-25
-
+100
Qg
35
5
56
-
Qgs
Qgd
td(on)
tr
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
VDS=-48V
VGS=-10V
12
12
23
45
60
-
VDS=-30V
-
ID=-12A
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω
-
VGS=-10V
-
Ciss
Coss
Crss
Input Capacitance
VGS=0V
1440 2300
Output Capacitance
Reverse Transfer Capacitance
VDS=-25V
160
120
-
-
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Test Conditions
IS=-12A, VGS=0V
IS=-12A, VGS=0V,
dI/dt=-100A/µs
Min. Typ. Max. Units
VSD
trr
-
-
-
-
-1.3
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
43
75
-
-
Qrr
Notes:
1.Pulse width limited Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9575AGS-HF
60
40
20
0
40
30
20
10
0
-10V
-7.0V
T C = 1 5 0 o C
-10V
-7.0V
T C =25 o C
-5.0V
-4.5V
-5.0V
-4.5V
V G =- 4 .0V
VG =-3.0V
0
2
4
6
8
10
0
2
4
6
8
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
210
170
130
90
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
I D = - 12 A
I D = -9 A
V
G =-10V
T
C =25 ℃
Ω
50
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
16
12
8
3.0
2.5
2.0
1.5
1.0
T j =150 o
C
T j =25 o C
4
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9575AGS-HF
f=1.0MHz
12
2400
2000
1600
1200
800
400
0
10
8
I D = -12A
C iss
V
DS = -48V
6
4
2
0
C oss
C rss
0
10
20
30
40
50
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
10
1
1
Duty factor=0.5
Operation in this
area limited by
RDS(ON)
100us
0.2
0.1
0.1
1ms
0.05
PDM
10ms
100ms
DC
0.02
t
T
0.01
T C =25 o C
Duty factor = t/T
Single Pulse
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.1
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
20
10
0
T j =25 o C
T j =150 o C
VG
V
DS = -5V
QG
-10V
QGD
QGS
Q
Charge
0
2
4
6
8
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
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