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AP9575GI [A-POWER]

P-CHANNEL ENHANCEMENT MODE POWER MOSFET; P沟道增强型功率MOSFET
AP9575GI
型号： AP9575GI
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

P-CHANNEL ENHANCEMENT MODE POWER MOSFET
P沟道增强型功率MOSFET
文件： 总4页 (文件大小：61K)
中文：  中文翻译
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AP9575GI  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
P-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
▼ Lower Gate Charge  
BVDSS  
RDS(ON)  
ID  
-60V  
70mΩ  
-16A  
▼ Simple Drive Requirement  
▼ Fast Switching Characteristic  
G
D
TO-220CFM(I)  
S
Description  
D
S
The Advanced Power MOSFETs from APEC provide the designer with  
the best combination of fast switching, ruggedized device design, low  
on-resistance and cost-effectiveness.  
G
The TO-220CFM isolation package is universally preferred for all  
commercial-industrial through hole applications.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
-60  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
±20  
V
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25℃  
ID@TC=100℃  
IDM  
-16  
A
-10  
A
-60  
A
PD@TC=25℃  
Total Power Dissipation  
31.25  
0.25  
W
Linear Derating Factor  
W/℃  
℃
℃
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
℃/W  
℃/W  
Rthj-c  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Max.  
Max.  
4.0  
65  
Rthj-a  
Data and specifications subject to change without notice  
200515071-1/4  
AP9575GI  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
RDS(ON)  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
Static Drain-Source On-Resistance2 VGS=-10V, ID=-10A  
VGS=0V, ID=-250uA  
-60  
-
-
-
-
V
-
-
70  
90  
mΩ  
mΩ  
VGS=-4.5V, ID=-8A  
VGS(th)  
Gate Threshold Voltage  
VDS=VGS, ID=-250uA  
VDS=-10V, ID=-10A  
VDS=-60V, VGS=0V  
VDS=-48V, VGS=0V  
VGS= ±20V  
-1  
-
-
-3  
V
gfs  
Forward Transconductance  
Drain-Source Leakage Current (T=25oC)  
14  
-
-
S
IDSS  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
Ω
-
-10  
j
Drain-Source Leakage Current (T=150oC)  
-
-
-25  
j
IGSS  
Qg  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
-
-
±100  
ID=-10A  
-
21  
5
34  
-
Qgs  
Qgd  
td(on)  
tr  
VDS=-50V  
-
VGS=-4.5V  
-
11  
10  
18  
24  
42  
-
VDS=-30V  
-
-
ID=-10A  
-
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω,VGS=-10V  
RD=3Ω  
-
-
-
-
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
VGS=0V  
-
1760 2800  
VDS=-25V  
-
160  
130  
5
-
-
f=1.0MHz  
-
f=1.0MHz  
-
8
Source-Drain Diode  
Symbol  
Parameter  
Forward On Voltage2  
Reverse Recovery Time2  
Test Conditions  
IS=-10A, VGS=0V  
IS=-10A, VGS=0V,  
dI/dt=-100A/µs  
Min. Typ. Max. Units  
VSD  
trr  
-
-
-
-
-1.3  
V
ns  
nC  
46  
-
-
Qrr  
Reverse Recovery Charge  
100  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse test  
THIS PRODUCT IS ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.  
THIS PRODUCT HAS BEEN QUALIFIED FOR USE IN CONSUMER APPLICATIONS. APPLICATIONS OR USE IN LIFE SUPPORT  
OR OTHER SIMILAR MISSION-CRITICAL DEVICES OR SYSTEMS ARE NOT AUTHORIZED.  
2/4  
AP9575GI  
50  
40  
30  
20  
10  
0
50  
40  
30  
20  
10  
0
-10V  
- 7 .0V  
-5.0V  
-4.5V  
T C = 25 o  
C
-10V  
-7.0V  
-5.0V  
-4.5V  
T C =150 o  
C
V
G = -3.0V  
V
G = -3.0 V  
0
4
8
12  
0
4
8
12  
-V DS , Drain-to-Source Voltage (V)  
-V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
110  
2.0  
1.6  
1.2  
0.8  
0.4  
I D = - 10 A  
I D = -8 A  
V
G = -10V  
T
C =25 ℃  
90  
Ω
70  
50  
2
4
6
8
10  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
-V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
10  
8
6
4
2
0
T j =150 o  
C
T j =25 o  
C
-50  
0
50  
100  
150  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
T j , Junction Temperature ( o C)  
-V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3/4  
AP9575GI  
f=1.0MHz  
12  
10000  
1000  
100  
V DS = - 50 V  
D = - 10 A  
I
9
6
3
C iss  
C oss  
C rss  
10  
0
0
10  
20  
30  
40  
1
5
9
13  
17  
21  
25  
29  
-V DS , Drain-to-Source Voltage (V)  
Q G , Total Gate Charge (nC)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
100  
10  
1
1
Duty factor=0.5  
100us  
1ms  
0.2  
0.1  
0.1  
10ms  
100ms  
0.05  
PDM  
t
0.02  
T
1s  
DC  
T c =25 o C  
0.01  
Duty factor = t/T  
Peak Tj = PDM x Rthjc + TC  
Single Pulse  
Single Pulse  
0.01  
0
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
0.1  
1
10  
100  
-V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
30  
20  
10  
0
T j =25 o C  
T j =150 o C  
VG  
V
DS = -5V  
QG  
-4.5V  
QGD  
QGS  
Charge  
Q
0
2
4
6
-V GS , Gate-to-Source Voltage (V)  
Fig 11. Transfer Characteristics  
Fig 12. Gate Charge Waveform  
4/4  

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