AP95T06GS-HF_16 [A-POWER]

Fast Switching Characteristic;


型号：	AP95T06GS-HF_16
厂家：	ADVANCED POWER ELECTRONICS CORP.
描述：	Fast Switching Characteristic
文件：	总5页 (文件大小：59K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AP95T06GS/P-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

60V

8.5mΩ

75A

▼ Lower On-resistance

▼ Fast Switching Characteristic

▼ RoHS Compliant & Halogen-Free

Description

AP95T06 series are from Advanced Power innovated design and silicon

process technology to achieve the lowest possible on-resistance and

fast switching performance. It provides the designer with an extreme

efficient device for use in a wide range of power applications.

The TO-263 package is widely preferred for all commercial-industrial

surface mount applications using infrared reflow technique and suited for

high current application due to the low connection resistance. The

through-hole version (AP95T06GP) are available for low-profile

applications.

TO-263(S)

TO-220(P)

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

Drain Current, V_GS@ 10V³

+20

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Drain Current, V_GS@ 10V

Pulsed Drain Current¹

260

P_D@T_C=25℃

Total Power Dissipation

138

Linear Derating Factor

Single Pulse Avalanche Energy⁴

1.11

W/℃

E_AS

I_AR

450

Avalanche Current

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

℃

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient (PCB mount)⁵

Maximum Thermal Resistance, Junction-ambient

0.9

Rthj-a

Data and specifications subject to change without notice

201501154

AP95T06GS/P-HF

Electrical Characteristics@T_j=25^oC(unless otherwise specified)

Symbol

BV_DSS

Parameter

Test Conditions

V_GS=0V, I_D=1mA

Min. Typ. Max. Units

Drain-Source Breakdown Voltage

0.05

ΔBV_DSS/ΔT_j

Breakdown Voltage Temperature Coefficient Reference to 25℃, I_D=1mA

Static Drain-Source On-Resistance²V_GS=10V, I_D=45A

V_GS=4.5V, I_D=20A

V/℃

mΩ

R_DS(ON)

8.5

mΩ

V_GS(th)

g_fs

Gate Threshold Voltage

V_DS=V_GS, I_D=250uA

V_DS=10V, I_D=45A

V_DS=60V, V_GS=0V

Forward Transconductance

Drain-Source Leakage Current

Drain-Source Leakage Current (T_j=125^oC) V_DS=48V ,V_GS=0V

I_DSS

100

I_GSS

Q_g

Gate-Source Leakage

Total Gate Charge

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

V_GS=+20V, V_DS=0V

I_D=45A

+100

109

115

Q_gs

Q_gd

t_d(on)

t_r

V_DS=48V

V_GS=4.5V

V_DS=30V

I_D=45A

t_d(off)

t_f

Turn-off Delay Time

Fall Time

R_G=3.3Ω

V_GS=10V

C_iss

Input Capacitance

V_GS=0V

5700 9200

C_oss

C_rss

R_g

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

V_DS=25V

f=1.0MHz

900

560

1.1

1.7

Source-Drain Diode

Symbol

Parameter

Forward On Voltage²

Test Conditions

Min. Typ. Max. Units

V_SD

t_rr

I_S=45A, V_GS=0V

I_S=20A, V_GS=0V

dI/dt=100A/µs

1.3

Reverse Recovery Time

Reverse Recovery Charge

Q_rr

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse test

3.Package limitation current is 75A .

4.Starting T_j=25^oC , V_DD=30V , L=1mH , R_G=25Ω , I_AS=30A.

5.Surface mounted on 1 in²copper pad of FR4 board

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.

APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED

HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

AP95T06GS/P-HF

250

200

150

100

120

10V

7.0 V

T _C= 150 ^o

7.0 V

5.0V

4.5V

T _C= 25 ^o

5.0V

4.5V

V _G=3.0V

V _DS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1.6

1.2

0.8

0.4

I _D=45A

V _G=10V

I _D=20A

T _C=25 ^o

-50

100

150

T _j, Junction Temperature ( ^oC)

V _GSGate-to-Source Voltage (V)

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance

v.s. Junction Temperature

2.0

1.5

1.0

0.5

0.0

T _j=150 ^o

T _j=25 ^o

-50

100

150

0.2

0.4

0.6

0.8

1.2

1.4

T _j, Junction Temperature ( ^oC)

V _SD, Source-to-Drain Voltage (V)

Fig 5. Forward Characteristic of

Reverse Diode

Fig 6. Gate Threshold Voltage v.s.

Junction Temperature

AP95T06GS/P-HF

f=1.0MHz

10000

I _D= 45 A

C _iss

V _DS= 30 V

V _DS= 38 V

V _DS= 48 V

1000

C _oss

C _rss

100

120

Q _G, Total Gate Charge (nC)

V _DS,Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

1000

100

Duty factor=0.5

0.2

0.1

100us

1ms

0.1

0.05

P_DM

0.02

10ms

0.01

Duty factor = t/T

Single Pulse

100ms

T _c=25 ^o

Peak T_j= P_DMx R_thjc+ T_C

Single Pulse

0.01

0.1

100

1000

0.00001

0.0001

0.001

0.01

0.1

V _DS, Drain-to-Source Voltage (V)

t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

130

104

V_G

V _DS=5V

T _j=25 ^o

T _j=150 ^o

Q_G

4.5V

Q_GD

Q_GS

Charge

V _GS, Gate-to-Source Voltage (V)

Fig 11. Transfer Characteristics

Fig 12. Gate Charge Waveform

AP95T06GS/P-HF

MARKING INFORMATION

TO-263

Part Number

meet Rohs requirement

for low voltage MOSFET only

95T06GS

YWWSSS

Package Code

Date Code (YWWSSS)

Y：Last Digit Of The Year

WW：Week

SSS：Sequence

TO-220

Part Number

meet Rohs requirement

for low voltage MOSFET only

95T06GP

YWWSSS

Package Code

Date Code (YWWSSS)

Y：Last Digit Of The Year

WW：Week

SSS：Sequence

AP95T06GS-HF_16 [A-POWER]

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