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AP95T07BGP-HF [A-POWER]

TRANSISTOR POWER, FET, FET General Purpose Power;
AP95T07BGP-HF
型号： AP95T07BGP-HF
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

TRANSISTOR POWER, FET, FET General Purpose Power

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AP95T07BGP-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
▼ Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
75V  
5mΩ  
125A  
▼ Lower On-resistance  
▼ RoHS Compliant & Halogen-Free  
G
Description  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
G
TO-220(P)  
D
S
The TO-220 package is widely preferred for commercial-industrial  
through-hole applications.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
75  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
V
ID@TC=25℃  
ID@TC=25℃  
ID@TC=100℃  
IDM  
Continuous Drain Current (Chip)  
Continuous Drain Current, VGS @ 10V3  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
125  
A
100  
A
78  
A
400  
A
PD@TC=25℃  
PD@TA=25℃  
TSTG  
Total Power Dissipation  
138.9  
2
W
W
℃
℃
Total Power Dissipation  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
℃/W  
℃/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maixmum Thermal Resistance, Junction-ambient  
0.9  
62  
Rthj-a  
Data and specifications subject to change without notice  
1
201012281  
AP95T07BGP-HF  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
RDS(ON)  
VGS(th)  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
Static Drain-Source On-Resistance2 VGS=10V, ID=60A  
VGS=0V, ID=250uA  
75  
-
-
-
-
-
V
mΩ  
V
5
4
Gate Threshold Voltage  
VDS=VGS, ID=250uA  
2
gfs  
Forward Transconductance  
Drain-Source Leakage Current  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
VDS=10V, ID=60A  
VDS=60V, VGS=0V  
VGS=+20V, VDS=0V  
ID=40A  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
90  
-
-
S
IDSS  
IGSS  
Qg  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
Ω
25  
-
+100  
96  
25  
40  
20  
70  
37  
15  
154  
Qgs  
Qgd  
td(on)  
tr  
VDS=60V  
-
-
-
-
-
-
VGS=10V  
VDS=40V  
ID=40A  
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=1Ω  
VGS=10V  
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
VGS=0V  
5100 8160  
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
VDS=25V  
700  
340  
1.3  
-
-
-
f=1.0MHz  
f=1.0MHz  
Source-Drain Diode  
Symbol  
Parameter  
Forward On Voltage2  
Reverse Recovery Time2  
Test Conditions  
Min. Typ. Max. Units  
V
VSD  
trr  
IS=40A, VGS=0V  
IS=10A, VGS=0V  
dI/dt=100A/µs  
-
-
-
-
1.3  
ns  
55  
-
-
nC  
Qrr  
Reverse Recovery Charge  
110  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse test  
3.Package limitation current is 100A.  
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.  
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.  
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED  
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN.  
2
AP95T07BGP-HF  
300  
250  
200  
150  
100  
50  
200  
160  
120  
80  
T C = 150 o  
C
T C = 25 o  
C
10V  
8.0V  
7.0V  
10V  
8.0V  
7.0V  
6.0V  
6.0V  
V GS =5.0V  
V GS =5.0V  
40  
0
0
0
8
16  
24  
32  
0
4
8
12  
16  
20  
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
1.6  
1.4  
1.2  
1
I
D =1mA  
I D =60A  
V
G =10V  
0.8  
0.6  
0.4  
-50  
0
50  
100  
150  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
T j , Junction Temperature ( o C)  
Fig 3. Normalized BVDSS v.s. Junction  
Temperature  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
1.6  
1.2  
0.8  
0.4  
0.0  
40  
30  
20  
10  
0
I D =1mA  
T j =150 o  
C
T j =25 o  
C
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3
AP95T07BGP-HF  
f=1.0MHz  
12  
8000  
6000  
4000  
2000  
0
I D =40A  
V
DS =60V  
10  
8
C iss  
6
4
2
C oss  
C rss  
25  
0
1
5
9
13  
17  
21  
29  
0
20  
40  
60  
80  
100  
120  
V DS , Drain-to-Source Voltage (V)  
Q G , Total Gate Charge (nC)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
1
1000  
100  
10  
Duty factor=0.5  
Operation in this area  
limited by R  
DS(ON)  
0.2  
0.1  
100us  
1ms  
0.1  
0.05  
PDM  
t
10ms  
100ms  
0.02  
T
0.01  
T c =25 o  
C
Duty factor = t/T  
Peak Tj = PDM x Rthjc + TC  
Single Pulse  
DC  
Single Pulse  
1
0.01  
0.1  
1
10  
100  
1000  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
VG  
VDS  
90%  
QG  
10V  
QGS  
QGD  
10%  
VGS  
tr  
td(on)  
td(off) tf  
Q
Charge  
Fig 11. Switching Time Waveform  
Fig 12. Gate Charge Waveform  
4

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