AP98T06GP-HF [A-POWER]
TRANSISTOR POWER, FET, FET General Purpose Power;
| 型号： | AP98T06GP-HF |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | TRANSISTOR POWER, FET, FET General Purpose Power 局域网 开关 脉冲 晶体管 |
| 文件： | 总4页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP98T06GP-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼ Simple Drive Requirement
BVDSS
RDS(ON)
ID
60V
5mΩ
80A
▼ Lower Gate Charge
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
G
TO-220(P)
D
S
The TO-220 package is widely preferred for commercial-industrial
through-hole applications.
Absolute Maximum Ratings
Symbol
Parameter
Rating
60
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V3
+20
80
V
ID@TC=25℃
A
IDM
Pulsed Drain Current1
320
250
45
A
PD@TC=25℃
Total Power Dissipation
W
mJ
℃
℃
EAS
TSTG
TJ
Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maixmum Thermal Resistance, Junction-ambient
0.5
62
Rthj-a
Data and specifications subject to change without notice
1
201309164
AP98T06GP-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
VGS(th)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=10V, ID=40A
VGS=0V, ID=1mA
60
-
-
-
-
-
V
mΩ
V
5
4
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
gfs
Forward Transconductance
VDS=10V, ID=40A
VDS=48V, VGS=0V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
82
-
-
S
IDSS
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=125oC) VDS=48V ,VGS=0V
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
25
-
250
IGSS
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
VGS= +20V, VDS=0V
ID=30A
-
+100
Qg
90
17
47
20
80
40
60
150
Qgs
Qgd
td(on)
tr
VDS=48V
VGS=10V
VDS=30V
ID=30A
-
-
-
-
-
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω
VGS=10V
VGS=0V
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
3500 6300
VDS=25V
f=1.0MHz
f=1.0MHz
1120
310
1.4
-
-
-
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Test Conditions
Min. Typ. Max. Units
V
VSD
trr
IS=40A, VGS=0V
IS=10A, VGS=0V
dI/dt=100A/µs
-
-
-
-
1.3
ns
Reverse Recovery Time
Reverse Recovery Charge
75
-
-
nC
Qrr
170
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 80A, calculated continuous current
based on maximum allowable junction temperature is 171A.
4.Starting Tj=25oC, VDD=50V, L=0.1mH, RG=25Ω, IAS=30A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP98T06GP-HF
300
250
200
150
100
50
160
120
80
T C = 150 o
C
T C = 25 o
C
10 V
8.0 V
7.0 V
6.0 V
10 V
8.0 V
7.0 V
6.0 V
V G = 5.0 V
V
G = 5 .0V
40
0
0
0
2
4
6
8
0
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
8
2.4
2.0
1.6
1.2
0.8
0.4
I D =40A
I D =40A
T
C =25 o C
V
G =10V
7
6
5
4
Ω
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
40
30
20
10
0
1.2
0.8
0.4
0.0
T j =150 o C
T j =25 o C
-50
0
50
100
150
0
0.2
0.4
0.6
0.8
1
1.2
1.4
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP98T06GP-HF
f=1.0MHz
5000
4000
3000
2000
1000
0
12
I D = 30 A
10
V DS =30V
V
DS =36V
C iss
8
6
4
2
0
V
DS =48V
C oss
C rss
0
20
40
60
80
100
120
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1000
100
10
Duty factor=0.5
Operation in this area
limited by R
DS(ON)
100us
1ms
0.2
0.1
0.1
0.05
PDM
t
10ms
0.02
T
0.01
T c =25 o C
100ms
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
DC
Single Pulse
1
0.01
0.01
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
tr
td(on)
td(off) tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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