AP9960M [A-POWER]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | AP9960M |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总6页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP9960M
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D2
▼ Low On-Resistance
BVDSS
RDS(ON)
ID
40V
20mΩ
7.8A
D2
D1
▼ Fast Switching Speed
▼ Surface Mount Package
D1
G2
S2
G1
SO-8
S1
Description
D2
S2
D1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G2
G1
S1
Absolute Maximum Ratings
Symbol
Parameter
Rating
40
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
± 20
V
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
7.8
A
6.2
A
20
A
PD@TA=25℃
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
2
W
0.016
-55 to 150
-55 to 150
W/℃
℃
℃
TSTG
TJ
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Value
62.5
Unit
Rthj-amb
Thermal Resistance Junction-ambient3
Max.
℃/W
Data and specifications subject to change without notice
200120031
AP9960M
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=250uA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
40
-
-
0.032
-
-
-
V
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
V/℃
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=7A
-
20
VGS=4.5V, ID=5A
VDS=VGS, ID=250uA
VDS=10V, ID=7A
VDS=40V, VGS=0V
VDS=32V ,VGS=0V
VGS= ± 20V
ID=7A
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
32
mΩ
V
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
3
25
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
-
1
-
25
IGSS
Qg
-
±100
14.7
7.1
6.8
11.5
6.3
28.2
12.6
1725
235
145
-
-
-
-
-
-
-
-
-
-
Qgs
Qgd
td(on)
tr
Gate-Source Charge
VDS=20V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=4.5V
VDS=20V
Rise Time
ID=1A
td(off)
tf
Turn-off Delay Time
RG=3.3Ω,VGS=10V
RD=20Ω
Fall Time
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
VDS=25V
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
A
A
V
IS
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )1
Forward On Voltage2
VD=VG=0V , VS=1.3V
-
-
-
-
-
-
2.3
20
ISM
VSD
Tj=25℃, IS=2.3A, VGS=0V
1.3
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on FR4 board, t<10 sec.
AP9960M
36
24
12
0
32
24
16
8
10V
6.0V
5.0V
4.5V
T C =150 o C
10V
6.0V
5.0V
4.5V
T C =25 o C
V
GS =4.0V
V GS =4.0V
0
0
1
2
3
4
0
1
2
3
4
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2
1.4
0.8
0.2
80
60
40
20
0
I D =7.0A
I D =7.0A
T C =25 ℃
V
GS =10V
Ω
Ω
Ω
Ω
2
4
6
8
10
12
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
AP9960M
10
2.4
1.6
0.8
0
8
6
4
2
0
25
50
75
100
125
150
0
50
100
150
T c , Case Temperature ( o C)
T c , Case Temperature ( o C)
Fig 5. Maximum Drain Current v.s.
Case Temperature
Fig 6. Typical Power Dissipation
1
100
Duty Factor = 0.5
0.2
0.1
10
0.1
1ms
0.05
10ms
1
0.02
100ms
1s
0.01
PDM
t
0.01
T
Single Pulse
0.1
10s
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
T C =25 o C
Single Pulse
0.001
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
V DS (V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
AP9960M
f=1.0MHz
12
10000
1000
100
I D =7.0A
Ciss
9
VDS =12V
VDS =16V
VDS =20V
6
Coss
Crss
3
0
10
0
5
10
15
20
25
1
7
13
19
25
31
VDS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
3.5
100
3
10
2.5
Tj=150 o C
Tj=25 o C
2
1
1.5
0.1
1
0.5
0.01
-50
0
50
100
150
0
0.4
0.8
1.2
T j , Junction Temperature ( o C )
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
AP9960M
VDS
RD
90%
VDS
TO THE
OSCILLOSCOPE
D
S
0.5 x RATED VDS
RG
G
10%
VGS
+
10 v
VGS
-
td(off)
td(on) tr
tf
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
VG
VDS
QG
TO THE
OSCILLOSCOPE
D
S
4.5V
0.5 x RATED VDS
QGD
QGS
G
VGS
+
1~ 3 mA
IG
-
I
D
Q
Charge
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
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A-POWER
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