AP9977GM [A-POWER]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | AP9977GM |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总5页 (文件大小：218K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP9977GM
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
BVDSS
RDS(ON)
ID
60V
100mΩ
3.3A
D2
▼ Single Drive Requirement
▼ Surface Mount Package
D2
D1
D1
G2
S2
G1
S1
Description
D2
S2
D1
S1
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G2
G1
Absolute Maximum Ratings
Symbol
Parameter
Rating
60
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
±25
V
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
3.3
A
2.7
A
20
A
PD@TA=25℃
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
2
W
0.016
-55 to 150
-55 to 150
W/℃
℃
℃
TSTG
TJ
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Value
62.5
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
℃/W
Data and specifications subject to change without notice
201108073-1/4
AP9977GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=250uA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
60
-
-
0.04
-
-
-
V
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=3A
VGS=4.5V, ID=2A
V/℃
RDS(ON)
-
100 mΩ
125 mΩ
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
VGS(th)
gfs
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=10V, ID=3A
VDS=60V, VGS=0V
VDS=48V, VGS=0V
VGS=±25V
3
-
V
Forward Transconductance
Drain-Source Leakage Current (T=25oC)
6
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
-
10
25
±100
10
-
j
Drain-Source Leakage Current (T=70oC)
-
j
IGSS
Qg
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
-
ID=3A
6
Qgs
Qgd
td(on)
tr
VDS=48V
2
VGS=4.5V
3
-
VDS=30V
6
12
12
32
8
ID=1A
5
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=10V
RD=30Ω
16
3
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V
510
55
35
1.3
810
-
VDS=25V
f=1.0MHz
-
f=1.0MHz
-
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
Reverse Recovery Time2
IS=1.7A, VGS=0V
IS=4A, VGS=0V,
dI/dt=100A/µs
-
-
-
-
1.2
54
-
V
27
32
ns
nC
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad.
2/4
AP9977GM
25
20
15
10
5
25
20
15
10
5
10V
7.0 V
5.0V
4.5V
T A = 150 o
C
T A = 25 o
C
10V
7.0V
5.0V
4.5V
V G =3.0V
V
G =3.0V
0
0
0
2
4
6
8
0
2
4
6
8
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I D = 3 A
I D = 2 A
V
G =10V
T
A =25 ℃
90
Ω
80
70
-50
0
50
100
150
2
4
6
8
10
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
4
1.8
1.5
1.2
0.9
0.6
0.3
3
2
1
0
T j =150 o C
T j =25 o C
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP9977GM
f=1.0MHz
C iss
14
1000
100
10
I D = 3 A
12
V
V
V
DS = 30 V
DS = 38 V
DS = 48 V
10
8
6
C oss
C rss
4
2
0
0
5
10
15
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
0.2
0.1
10
0.1
100us
1ms
0.05
1
0.02
0.01
10ms
PDM
Single Pulse
0.01
t
100ms
T
0.1
T A =25 o C
Duty factor = t/T
1s
Peak Tj = PDM x Rthja + Ta
Single Pulse
Rthja = 135℃/W
DC
0.001
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
1000
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
tr
td(on)
td(off)tf
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : SO-8
D
Millimeters
SYMBOLS
MIN NOM MAX
1.35 1.55 1.75
0.10 0.18 0.25
0.33 0.41 0.51
0.19 0.22 0.25
4.80 4.90 5.00
3.80 3.90 4.00
5.80 6.15 6.50
0.38 0.71 1.27
A
A1
B
8
7
6
3
5
4
E
C
E1
D
E1
E
1
2
L
θ
0
4.00 8.00
1.27 TYP
e
e
B
A
A1
DETAIL A
θ
L
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
c
DETAIL A
Part Marking Information & Packing : SO-8
Part Number
Package Code
meet Rohs requirement
GM
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
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